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DE69536116D1 - Halbleiterbauelement mit Graben - Google Patents

Halbleiterbauelement mit Graben

Info

Publication number
DE69536116D1
DE69536116D1 DE69536116T DE69536116T DE69536116D1 DE 69536116 D1 DE69536116 D1 DE 69536116D1 DE 69536116 T DE69536116 T DE 69536116T DE 69536116 T DE69536116 T DE 69536116T DE 69536116 D1 DE69536116 D1 DE 69536116D1
Authority
DE
Germany
Prior art keywords
trench
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69536116T
Other languages
English (en)
Inventor
Katsumi Nakamura
Tadaharu Minato
Shuuichi Tominaga
Katsuomi Shiozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69536116D1 publication Critical patent/DE69536116D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/021—Manufacture or treatment of gated diodes, e.g. field-controlled diodes [FCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0102—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode
    • H10D84/0105—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode the built-in components being field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
DE69536116T 1994-02-04 1995-02-06 Halbleiterbauelement mit Graben Expired - Lifetime DE69536116D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1255994 1994-02-04
JP00134795A JP3396553B2 (ja) 1994-02-04 1995-01-09 半導体装置の製造方法及び半導体装置

Publications (1)

Publication Number Publication Date
DE69536116D1 true DE69536116D1 (de) 2010-12-02

Family

ID=26334557

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69534955T Active DE69534955T8 (de) 1994-02-04 1995-02-06 Methode zur Herstellung von Gräben in einem Halbleiterbauelement
DE69535936T Expired - Lifetime DE69535936D1 (de) 1994-02-04 1995-02-06 Verfahren zum Herstellen einer Halbleitervorrichtung mit Graben
DE69536116T Expired - Lifetime DE69536116D1 (de) 1994-02-04 1995-02-06 Halbleiterbauelement mit Graben

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69534955T Active DE69534955T8 (de) 1994-02-04 1995-02-06 Methode zur Herstellung von Gräben in einem Halbleiterbauelement
DE69535936T Expired - Lifetime DE69535936D1 (de) 1994-02-04 1995-02-06 Verfahren zum Herstellen einer Halbleitervorrichtung mit Graben

Country Status (5)

Country Link
US (4) US5783491A (de)
EP (3) EP1160872B1 (de)
JP (1) JP3396553B2 (de)
KR (1) KR100188823B1 (de)
DE (3) DE69534955T8 (de)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3396553B2 (ja) * 1994-02-04 2003-04-14 三菱電機株式会社 半導体装置の製造方法及び半導体装置
US5719085A (en) * 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
US6107661A (en) * 1995-09-29 2000-08-22 Nippondenso Co., Ltd. Semiconductor device and method of manufacturing same
FR2739493B1 (fr) * 1995-09-29 2000-07-28 Nippon Denso Co Mosfet de puissance et son procede de fabrication
WO1998012741A1 (en) * 1996-09-18 1998-03-26 Advanced Micro Devices, Inc. Short channel non-self aligned vmos field effect transistor
JP3342412B2 (ja) * 1997-08-08 2002-11-11 三洋電機株式会社 半導体装置およびその製造方法
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US6429481B1 (en) * 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
DE19860962B4 (de) * 1998-03-05 2007-02-01 Mitsubishi Denki K.K. Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung
JP3705919B2 (ja) 1998-03-05 2005-10-12 三菱電機株式会社 半導体装置及びその製造方法
US6372599B1 (en) 1999-01-14 2002-04-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US6706604B2 (en) * 1999-03-25 2004-03-16 Hitachi, Ltd. Method of manufacturing a trench MOS gate device
JP2000332242A (ja) 1999-05-21 2000-11-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100333378B1 (ko) * 1999-06-23 2002-04-18 박종섭 반도체 소자의 제조방법
DE19935442C1 (de) * 1999-07-28 2000-12-21 Siemens Ag Verfahren zum Herstellen eines Trench-MOS-Leistungstransistors
JP2001085677A (ja) 1999-09-09 2001-03-30 Mitsubishi Electric Corp 半導体装置の製造方法
JP2001085686A (ja) 1999-09-13 2001-03-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
WO2001020684A1 (en) * 1999-09-14 2001-03-22 General Semiconductor, Inc. Trench dmos transistor having improved trench structure
TW442972B (en) * 1999-10-01 2001-06-23 Anpec Electronics Corp Fabricating method of trench-type gate power metal oxide semiconductor field effect transistor
EP1091413A3 (de) * 1999-10-06 2005-01-12 Lsi Logic Corporation Vollständig verarmter und invertierter CMOSFET mit vertikalem Kanal und dualem Gate
JP4860022B2 (ja) * 2000-01-25 2012-01-25 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP4200626B2 (ja) * 2000-02-28 2008-12-24 株式会社デンソー 絶縁ゲート型パワー素子の製造方法
US6417554B1 (en) * 2000-04-27 2002-07-09 International Rectifier Corporation Latch free IGBT with schottky gate
JP2001326273A (ja) 2000-05-16 2001-11-22 Denso Corp 半導体装置の製造方法
JP3728177B2 (ja) * 2000-05-24 2005-12-21 キヤノン株式会社 音声処理システム、装置、方法及び記憶媒体
JP2001351895A (ja) 2000-06-09 2001-12-21 Denso Corp 半導体装置の製造方法
US6437386B1 (en) * 2000-08-16 2002-08-20 Fairchild Semiconductor Corporation Method for creating thick oxide on the bottom surface of a trench structure in silicon
JP2002190595A (ja) * 2000-12-21 2002-07-05 Denso Corp 半導体装置及びその製造方法
JP4852792B2 (ja) * 2001-03-30 2012-01-11 株式会社デンソー 半導体装置の製造方法
JP2002334997A (ja) * 2001-05-08 2002-11-22 Shindengen Electric Mfg Co Ltd Ｍｏｓトレンチを有するショットキー障壁整流装置及びその製造方法
US6537921B2 (en) * 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
JP4857487B2 (ja) * 2001-05-30 2012-01-18 富士電機株式会社 トレンチ型半導体装置の製造方法
JP2005056868A (ja) * 2001-06-04 2005-03-03 Matsushita Electric Ind Co Ltd 炭化珪素半導体装置の製造方法
JP4225711B2 (ja) * 2001-06-29 2009-02-18 株式会社東芝 半導体素子及びその製造方法
JP2003017698A (ja) * 2001-07-04 2003-01-17 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2003023150A (ja) * 2001-07-10 2003-01-24 Sony Corp トレンチゲート型半導体装置及びその作製方法
US6800899B2 (en) * 2001-08-30 2004-10-05 Micron Technology, Inc. Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor
US7439141B2 (en) 2001-12-27 2008-10-21 Spansion, Llc Shallow trench isolation approach for improved STI corner rounding
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
US6781196B2 (en) 2002-03-11 2004-08-24 General Semiconductor, Inc. Trench DMOS transistor having improved trench structure
JP4123961B2 (ja) * 2002-03-26 2008-07-23 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
US20050106794A1 (en) * 2002-03-26 2005-05-19 Fuji Electric Holdings Co., Ltd. Method of manufacturing a semiconductor device
US7508048B2 (en) * 2003-01-16 2009-03-24 Samsung Electronics Co., Ltd. Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby
JP2004342863A (ja) * 2003-05-16 2004-12-02 Shindengen Electric Mfg Co Ltd 半導体装置
JP2005019668A (ja) * 2003-06-26 2005-01-20 Shindengen Electric Mfg Co Ltd 半導体装置
EP1536480A1 (de) * 2003-11-28 2005-06-01 STMicroelectronics S.r.l. Leistungshalbleiteranordnung mit isoliertem Gatter und Grabengatterstruktur sowie entsprechendes Herstellungsverfahren
CN1812127A (zh) * 2004-12-14 2006-08-02 松下电器产业株式会社 纵型栅极半导体装置及其制造方法
JP4844077B2 (ja) * 2005-10-13 2011-12-21 株式会社デンソー 半導体装置の製造方法
KR100743658B1 (ko) * 2006-06-29 2007-07-30 주식회사 하이닉스반도체 반도체 소자의 리세스 게이트 형성방법
KR100780656B1 (ko) * 2006-06-29 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 리세스게이트 제조방법
JP4979309B2 (ja) * 2006-08-29 2012-07-18 三菱電機株式会社 電力用半導体装置
JP2008098593A (ja) * 2006-09-15 2008-04-24 Ricoh Co Ltd 半導体装置及びその製造方法
JP2008311489A (ja) * 2007-06-15 2008-12-25 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
US8097916B2 (en) * 2007-07-23 2012-01-17 Infineon Technologies Austria Ag Method for insulating a semiconducting material in a trench from a substrate
TWI349314B (en) * 2007-08-27 2011-09-21 Anpec Electronics Corp Semiconductor process for trench power mosfet
JP5162186B2 (ja) * 2007-08-27 2013-03-13 トヨタ自動車株式会社 半導体装置の製造方法
JP4943394B2 (ja) * 2008-09-01 2012-05-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2010283132A (ja) 2009-06-04 2010-12-16 Mitsubishi Electric Corp 半導体装置
JP2011204927A (ja) 2010-03-25 2011-10-13 Seiko Instruments Inc 半導体装置およびその製造方法
US9653597B2 (en) * 2010-05-20 2017-05-16 Infineon Technologies Americas Corp. Method for fabricating a shallow and narrow trench FET and related structures
JP2012004275A (ja) * 2010-06-16 2012-01-05 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法
JP5630090B2 (ja) * 2010-06-17 2014-11-26 富士電機株式会社 半導体装置の製造方法
JP2012009671A (ja) * 2010-06-25 2012-01-12 Panasonic Corp 半導体装置およびその製造方法
WO2012077617A1 (ja) * 2010-12-10 2012-06-14 三菱電機株式会社 半導体装置およびその製造方法
JP5687078B2 (ja) * 2011-01-28 2015-03-18 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP5738653B2 (ja) * 2011-03-31 2015-06-24 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5209152B1 (ja) * 2011-09-22 2013-06-12 パナソニック株式会社 炭化珪素半導体素子およびその製造方法
CN103065951B (zh) * 2011-10-21 2015-12-09 上海华虹宏力半导体制造有限公司 一种沟槽栅的形成方法
JP5718265B2 (ja) 2012-03-27 2015-05-13 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
CN103035481A (zh) * 2012-08-09 2013-04-10 上海华虹Nec电子有限公司 沟槽的形成方法
CN103632939A (zh) * 2012-08-15 2014-03-12 上海华虹宏力半导体制造有限公司 优化功率器件沟槽顶部圆角的方法
JPWO2014054121A1 (ja) 2012-10-02 2016-08-25 三菱電機株式会社 半導体装置
CN103854964B (zh) * 2012-11-30 2016-08-17 上海华虹宏力半导体制造有限公司 改善沟槽栅分立功率器件晶圆内应力的方法
CN104465754A (zh) * 2013-09-25 2015-03-25 北大方正集团有限公司 一种沟槽型dmos单元及其制备方法和dmos器件
JP6340200B2 (ja) * 2014-01-27 2018-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6324838B2 (ja) 2014-08-04 2018-05-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9520433B1 (en) 2015-08-28 2016-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating deep trench isolation structure in image sensor and device thereof
DE102015117286B4 (de) * 2015-10-09 2018-04-05 Infineon Technologies Ag Verfahren zum herstellen einer siliziumcarbidhalbleitervorrichtung durch entfernen amorphisierter abschnitte
JP6475142B2 (ja) * 2015-10-19 2019-02-27 トヨタ自動車株式会社 半導体装置とその製造方法
JP2017117963A (ja) * 2015-12-24 2017-06-29 トヨタ自動車株式会社 半導体装置の製造方法
CN108431962B (zh) 2015-12-28 2021-05-18 三菱电机株式会社 半导体装置、半导体装置的制造方法
DE102016116019B4 (de) 2016-08-29 2023-11-23 Infineon Technologies Ag Verfahren zum Bilden eines Halbleiterbauelements
JP6820738B2 (ja) 2016-12-27 2021-01-27 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP6346341B2 (ja) * 2017-05-15 2018-06-20 ローム株式会社 半導体装置
JP7135302B2 (ja) * 2017-11-08 2022-09-13 富士電機株式会社 炭化シリコン半導体装置及びその製造方法
JP6964566B2 (ja) 2018-08-17 2021-11-10 三菱電機株式会社 半導体装置およびその製造方法
US11987493B2 (en) 2018-10-31 2024-05-21 Hamamatsu Photonics K.K. Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure
JP7506604B2 (ja) * 2018-10-31 2024-06-26 浜松ホトニクス株式会社 半導体基板の製造方法、ダマシン配線構造の製造方法、半導体基板、及びダマシン配線構造
JP7220455B2 (ja) * 2018-11-06 2023-02-10 サムコ株式会社 ＳｉＣトレンチ型ＭＯＳＦＥＴのトレンチ作製方法
JP7151446B2 (ja) * 2018-12-12 2022-10-12 株式会社デンソー 半導体装置の製造方法
US10971632B2 (en) * 2019-06-24 2021-04-06 Semiconductor Components Industries, Llc High voltage diode on SOI substrate with trench-modified current path
CN113903794A (zh) * 2020-07-06 2022-01-07 和舰芯片制造(苏州)股份有限公司 包含沟槽栅的半导体器件的制备方法及半导体器件
US11640990B2 (en) 2020-10-27 2023-05-02 Wolfspeed, Inc. Power semiconductor devices including a trenched gate and methods of forming such devices
JP7580245B2 (ja) 2020-11-02 2024-11-11 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN112802742A (zh) * 2021-03-24 2021-05-14 上海华虹宏力半导体制造有限公司 半导体器件的制造方法
JP2023078717A (ja) 2021-11-26 2023-06-07 株式会社デンソー 半導体装置の製造方法
CN115425089A (zh) * 2022-11-07 2022-12-02 广东芯聚能半导体有限公司 半导体结构及其制备方法
JP2024114315A (ja) * 2023-02-13 2024-08-23 セイコーエプソン株式会社 半導体装置

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
JPS5743438A (en) * 1980-08-29 1982-03-11 Toshiba Corp Semiconductor device and manufacture thereof
EP0048175B1 (de) * 1980-09-17 1986-04-23 Hitachi, Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
US4437226A (en) * 1981-03-02 1984-03-20 Rockwell International Corporation Process for producing NPN type lateral transistor with minimal substrate operation interference
US4472240A (en) * 1981-08-21 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device
US4983535A (en) * 1981-10-15 1991-01-08 Siliconix Incorporated Vertical DMOS transistor fabrication process
JPS5940579A (ja) * 1982-08-30 1984-03-06 Agency Of Ind Science & Technol 絶縁ゲ−ト電界効果トランジスタ
US4819054A (en) * 1982-09-29 1989-04-04 Hitachi, Ltd. Semiconductor IC with dual groove isolation
US4477310A (en) * 1983-08-12 1984-10-16 Tektronix, Inc. Process for manufacturing MOS integrated circuit with improved method of forming refractory metal silicide areas
JPS6072243A (ja) * 1983-09-28 1985-04-24 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JPH073858B2 (ja) * 1984-04-11 1995-01-18 株式会社日立製作所 半導体装置の製造方法
JPS60223153A (ja) * 1984-04-19 1985-11-07 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型キャパシタを有する半導体装置の製法
US4604150A (en) * 1985-01-25 1986-08-05 At&T Bell Laboratories Controlled boron doping of silicon
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US4784720A (en) * 1985-05-03 1988-11-15 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US4735824A (en) * 1985-05-31 1988-04-05 Kabushiki Kaisha Toshiba Method of manufacturing an MOS capacitor
US4685198A (en) * 1985-07-25 1987-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing isolated semiconductor devices
JPS6269520A (ja) * 1985-09-21 1987-03-30 Semiconductor Energy Lab Co Ltd 光ｃｖｄ法により凹部を充填する方法
US4789560A (en) * 1986-01-08 1988-12-06 Advanced Micro Devices, Inc. Diffusion stop method for forming silicon oxide during the fabrication of IC devices
JPH0779133B2 (ja) * 1986-06-12 1995-08-23 松下電器産業株式会社 半導体装置の製造方法
US4693781A (en) * 1986-06-26 1987-09-15 Motorola, Inc. Trench formation process
JPS6376330A (ja) * 1986-09-18 1988-04-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
JPH0770713B2 (ja) 1987-02-12 1995-07-31 松下電器産業株式会社 Ｍｏｓ型半導体装置及びその製造方法
DE3809218C2 (de) * 1987-03-20 1994-09-01 Mitsubishi Electric Corp Halbleitereinrichtung mit einem Graben und Verfahren zum Herstellen einer solchen Halbleitereinrichtung
JPS63234534A (ja) 1987-03-24 1988-09-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS63314844A (ja) * 1987-06-18 1988-12-22 Toshiba Corp 半導体装置の製造方法
US5258332A (en) * 1987-08-28 1993-11-02 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices including rounding of corner portions by etching
JP2671312B2 (ja) * 1987-08-29 1997-10-29 ソニー株式会社 半導体装置の製造方法
JPH01179342A (ja) * 1988-01-05 1989-07-17 Toshiba Corp 複合半導体結晶体
JP2644515B2 (ja) 1988-01-27 1997-08-25 株式会社日立製作所 半導体装置
DE3902701A1 (de) * 1988-01-30 1989-08-10 Toshiba Kawasaki Kk Verfahren zur herstellung einer halbleiteranordnung
KR940003218B1 (ko) * 1988-03-24 1994-04-16 세이꼬 엡슨 가부시끼가이샤 반도체 장치 및 그 제조방법
JPH0783118B2 (ja) * 1988-06-08 1995-09-06 三菱電機株式会社 半導体装置およびその製造方法
JPH0291976A (ja) * 1988-09-29 1990-03-30 Oki Electric Ind Co Ltd 縦型溝型ｍｏｓ　ｆｅｔの製造方法
JPH0294477A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体装置及びその製造方法
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JP3236283B2 (ja) 1989-03-31 2001-12-10 富士ゼロックス株式会社 アンケート実施装置
JPH0358485A (ja) * 1989-07-27 1991-03-13 Oki Electric Ind Co Ltd 縦型ｍｏｓｆｅｔ装置の製造方法
JP2623850B2 (ja) * 1989-08-25 1997-06-25 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
JPH03129854A (ja) * 1989-10-16 1991-06-03 Toshiba Corp 半導体装置の製造方法
JPH03196570A (ja) 1989-12-25 1991-08-28 Nec Corp 絶縁ゲート型サイリスタ
JP2859351B2 (ja) 1990-02-07 1999-02-17 三菱電機株式会社 半導体装置の製造方法
US5183775A (en) * 1990-01-23 1993-02-02 Applied Materials, Inc. Method for forming capacitor in trench of semiconductor wafer by implantation of trench surfaces with oxygen
JPH03219677A (ja) 1990-01-24 1991-09-27 Fujitsu Ltd 半導体装置
JPH03236283A (ja) 1990-02-14 1991-10-22 Nissan Motor Co Ltd 半導体装置
US5202750A (en) * 1990-04-09 1993-04-13 U.S. Philips Corp. MOS-gated thyristor
KR960006714B1 (ko) 1990-05-28 1996-05-22 가부시끼가이샤 도시바 반도체 장치의 제조 방법
JP2667552B2 (ja) 1990-05-28 1997-10-27 株式会社東芝 半導体装置の製造方法
JPH04186776A (ja) 1990-11-20 1992-07-03 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
JPH04188877A (ja) 1990-11-22 1992-07-07 Yokogawa Electric Corp 高耐圧パワーｍｏｓｆｅｔ
JPH0547915A (ja) 1991-01-31 1993-02-26 Toshiba Corp 半導体装置及びその製造方法
KR950000103B1 (ko) * 1991-04-15 1995-01-09 금성일렉트론 주식회사 반도체 장치 및 그 제조방법
JP3283047B2 (ja) 1991-10-07 2002-05-20 株式会社東芝 半導体装置および半導体装置の製造方法
JPH07505013A (ja) * 1991-11-15 1995-06-01 アナログ・デバイセズ・インコーポレイテッド 絶縁体を充填した深いトレンチを半導体基板に製作する方法
US5324966A (en) * 1992-04-07 1994-06-28 Toyo Denki Seizo Kabushiki Kaisha MOS-controlled thyristor
JPH05335582A (ja) 1992-05-27 1993-12-17 Omron Corp 縦型ｍｏｓｆｅｔ装置およびその製造方法
JPH05335585A (ja) 1992-06-03 1993-12-17 Fuji Electric Co Ltd 絶縁ゲート型電力用半導体素子の製造方法
GB9215653D0 (en) * 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
US5316959A (en) 1992-08-12 1994-05-31 Siliconix, Incorporated Trenched DMOS transistor fabrication using six masks
JP3167457B2 (ja) 1992-10-22 2001-05-21 株式会社東芝 半導体装置
EP0603106A2 (de) * 1992-12-16 1994-06-22 International Business Machines Corporation Verfahren zur Reduzierung des Stress einer Grabenstruktur für ein SOI-Typ Substrat
US5448102A (en) * 1993-06-24 1995-09-05 Harris Corporation Trench isolation stress relief
JP3033412B2 (ja) * 1993-11-26 2000-04-17 株式会社デンソー 半導体装置の製造方法
JP3400846B2 (ja) 1994-01-20 2003-04-28 三菱電機株式会社 トレンチ構造を有する半導体装置およびその製造方法
JP3396553B2 (ja) * 1994-02-04 2003-04-14 三菱電機株式会社 半導体装置の製造方法及び半導体装置
JP3196570B2 (ja) 1995-05-19 2001-08-06 日立電線株式会社 多導体スペーサ
KR0186083B1 (ko) * 1995-08-12 1999-04-15 문정환 반도체 소자의 소자격리방법
JP3219677B2 (ja) 1996-03-28 2001-10-15 三洋電機株式会社 ロッド選別システム
JP3232276B2 (ja) 1998-05-27 2001-11-26 三ツ星ベルト株式会社 動力伝動用ベルト及び両面歯付ベルト

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US6117734A (en) 2000-09-12
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US7067874B2 (en) 2006-06-27
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