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KR970004020A - 반도체장치 - Google Patents

반도체장치

Info

Publication number
KR970004020A
KR970004020A KR1019960018651A KR19960018651A KR970004020A KR 970004020 A KR970004020 A KR 970004020A KR 1019960018651 A KR1019960018651 A KR 1019960018651A KR 19960018651 A KR19960018651 A KR 19960018651A KR 970004020 A KR970004020 A KR 970004020A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
KR1019960018651A
Other languages
English (en)
Other versions
KR100373223B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970004020A publication Critical patent/KR970004020A/ko
Application granted granted Critical
Publication of KR100373223B1 publication Critical patent/KR100373223B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019960018651A 1995-06-02 1996-05-30 반도체장치 KR100373223B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP95-136349 1995-06-02
JP13634995 1995-06-02
JP96-027574 1996-02-15
JP02757496A JP4198201B2 (ja) 1995-06-02 1996-02-15 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020010015077A Division KR100395261B1 (ko) 1995-06-02 2001-03-23 반도체장치

Publications (2)

Publication Number Publication Date
KR970004020A true KR970004020A (ko) 1997-01-29
KR100373223B1 KR100373223B1 (ko) 2003-07-22

Family

ID=26365515

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1019960018651A KR100373223B1 (ko) 1995-06-02 1996-05-30 반도체장치
KR1020010015077A Expired - Fee Related KR100395261B1 (ko) 1995-06-02 2001-03-23 반도체장치
KR1020030032779A Expired - Fee Related KR100395260B1 (ko) 1995-06-02 2003-05-23 반도체장치

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020010015077A Expired - Fee Related KR100395261B1 (ko) 1995-06-02 2001-03-23 반도체장치
KR1020030032779A Expired - Fee Related KR100395260B1 (ko) 1995-06-02 2003-05-23 반도체장치

Country Status (4)

Country Link
US (12) US5668770A (ko)
JP (1) JP4198201B2 (ko)
KR (3) KR100373223B1 (ko)
TW (1) TW302535B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR100472727B1 (ko) * 1998-12-24 2005-05-27 주식회사 하이닉스반도체 저전압용 인버터 체인 회로_

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US6108262A (en) 2000-08-22
US6388936B2 (en) 2002-05-14
US6215716B1 (en) 2001-04-10
JP4198201B2 (ja) 2008-12-17
US7251183B2 (en) 2007-07-31
US7978560B2 (en) 2011-07-12
US20100165706A1 (en) 2010-07-01
US8325553B2 (en) 2012-12-04
US6639828B2 (en) 2003-10-28
US20010006476A1 (en) 2001-07-05
US5668770A (en) 1997-09-16
US5894433A (en) 1999-04-13
US20050226077A1 (en) 2005-10-13
US6917556B2 (en) 2005-07-12
KR100395260B1 (ko) 2003-08-21
US7706205B2 (en) 2010-04-27
US20070165448A1 (en) 2007-07-19
US20030012049A1 (en) 2003-01-16
TW302535B (ko) 1997-04-11
US6469950B2 (en) 2002-10-22
US20110235439A1 (en) 2011-09-29
KR100373223B1 (ko) 2003-07-22
US20020110036A1 (en) 2002-08-15
US20040046188A1 (en) 2004-03-11
KR100395261B1 (ko) 2003-08-21

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