HK1075321A1 - A method of switching a magnetoresistive memory device and magnetoresistive array - Google Patents
A method of switching a magnetoresistive memory device and magnetoresistive arrayInfo
- Publication number
- HK1075321A1 HK1075321A1 HK05107472.7A HK05107472A HK1075321A1 HK 1075321 A1 HK1075321 A1 HK 1075321A1 HK 05107472 A HK05107472 A HK 05107472A HK 1075321 A1 HK1075321 A1 HK 1075321A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- magnetoresistive
- switching
- memory device
- array
- magnetoresistive memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/978,859 US6545906B1 (en) | 2001-10-16 | 2001-10-16 | Method of writing to scalable magnetoresistance random access memory element |
| PCT/US2002/030437 WO2003034437A2 (en) | 2001-10-16 | 2002-09-24 | Writing to a mram element comprising a synthetic antiferromagnetic layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1075321A1 true HK1075321A1 (en) | 2005-12-09 |
Family
ID=25526458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK05107472.7A HK1075321A1 (en) | 2001-10-16 | 2005-08-25 | A method of switching a magnetoresistive memory device and magnetoresistive array |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6545906B1 (xx) |
| EP (1) | EP1474807A2 (xx) |
| JP (1) | JP4292239B2 (xx) |
| KR (1) | KR100898875B1 (xx) |
| CN (1) | CN1610949B (xx) |
| AU (1) | AU2002327059A1 (xx) |
| HK (1) | HK1075321A1 (xx) |
| TW (1) | TW583666B (xx) |
| WO (1) | WO2003034437A2 (xx) |
Families Citing this family (311)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
| US7390584B2 (en) * | 2002-03-27 | 2008-06-24 | Nve Corporation | Spin dependent tunneling devices having reduced topological coupling |
| US6762952B2 (en) * | 2002-05-01 | 2004-07-13 | Hewlett-Packard Development Company, L.P. | Minimizing errors in a magnetoresistive solid-state storage device |
| US6826077B2 (en) * | 2002-05-15 | 2004-11-30 | Hewlett-Packard Development Company, L.P. | Magnetic random access memory with reduced parasitic currents |
| JP3808799B2 (ja) * | 2002-05-15 | 2006-08-16 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| US6633498B1 (en) * | 2002-06-18 | 2003-10-14 | Motorola, Inc. | Magnetoresistive random access memory with reduced switching field |
| US6816402B2 (en) * | 2002-06-21 | 2004-11-09 | Micron Technology, Inc. | Row and column line geometries for improving MRAM write operations |
| US6683815B1 (en) * | 2002-06-26 | 2004-01-27 | Silicon Magnetic Systems | Magnetic memory cell and method for assigning tunable writing currents |
| US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
| US7067862B2 (en) * | 2002-08-02 | 2006-06-27 | Unity Semiconductor Corporation | Conductive memory device with conductive oxide electrodes |
| US6898112B2 (en) * | 2002-12-18 | 2005-05-24 | Freescale Semiconductor, Inc. | Synthetic antiferromagnetic structure for magnetoelectronic devices |
| US6888743B2 (en) * | 2002-12-27 | 2005-05-03 | Freescale Semiconductor, Inc. | MRAM architecture |
| US6909631B2 (en) * | 2003-10-02 | 2005-06-21 | Freescale Semiconductor, Inc. | MRAM and methods for reading the MRAM |
| US6714442B1 (en) | 2003-01-17 | 2004-03-30 | Motorola, Inc. | MRAM architecture with a grounded write bit line and electrically isolated read bit line |
| KR100615600B1 (ko) * | 2004-08-09 | 2006-08-25 | 삼성전자주식회사 | 고집적 자기램 소자 및 그 제조방법 |
| US6952364B2 (en) * | 2003-03-03 | 2005-10-04 | Samsung Electronics Co., Ltd. | Magnetic tunnel junction structures and methods of fabrication |
| CN100541650C (zh) | 2003-03-20 | 2009-09-16 | Nxp股份有限公司 | 非易失性存储阵列和地址转换方法 |
| US6667899B1 (en) * | 2003-03-27 | 2003-12-23 | Motorola, Inc. | Magnetic memory and method of bi-directional write current programming |
| US7648158B2 (en) | 2003-04-03 | 2010-01-19 | Takata Corporation | Twin airbag |
| US6714446B1 (en) * | 2003-05-13 | 2004-03-30 | Motorola, Inc. | Magnetoelectronics information device having a compound magnetic free layer |
| US6816431B1 (en) * | 2003-05-28 | 2004-11-09 | International Business Machines Corporation | Magnetic random access memory using memory cells with rotated magnetic storage elements |
| US6778429B1 (en) | 2003-06-02 | 2004-08-17 | International Business Machines Corporation | Write circuit for a magnetic random access memory |
| JP4863151B2 (ja) * | 2003-06-23 | 2012-01-25 | 日本電気株式会社 | 磁気ランダム・アクセス・メモリとその製造方法 |
| US8471263B2 (en) * | 2003-06-24 | 2013-06-25 | Sang-Yun Lee | Information storage system which includes a bonded semiconductor structure |
| US6956763B2 (en) * | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
| WO2005008675A1 (en) * | 2003-07-22 | 2005-01-27 | Koninklijke Philips Electronics N.V. | Compensating a long read time of a memory device in data comparison and write operations |
| US7911832B2 (en) | 2003-08-19 | 2011-03-22 | New York University | High speed low power magnetic devices based on current induced spin-momentum transfer |
| US8755222B2 (en) | 2003-08-19 | 2014-06-17 | New York University | Bipolar spin-transfer switching |
| US6967366B2 (en) | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
| US6956764B2 (en) * | 2003-08-25 | 2005-10-18 | Freescale Semiconductor, Inc. | Method of writing to a multi-state magnetic random access memory cell |
| US6842365B1 (en) * | 2003-09-05 | 2005-01-11 | Freescale Semiconductor, Inc. | Write driver for a magnetoresistive memory |
| US6859388B1 (en) | 2003-09-05 | 2005-02-22 | Freescale Semiconductor, Inc. | Circuit for write field disturbance cancellation in an MRAM and method of operation |
| JP4759911B2 (ja) * | 2003-09-09 | 2011-08-31 | ソニー株式会社 | 磁気記憶素子及び磁気メモリ |
| WO2005038812A1 (ja) * | 2003-09-16 | 2005-04-28 | Nec Corporation | 半導体記憶装置及び半導体記憶装置のデータ書き込み方法 |
| US7372722B2 (en) * | 2003-09-29 | 2008-05-13 | Samsung Electronics Co., Ltd. | Methods of operating magnetic random access memory devices including heat-generating structures |
| US7369428B2 (en) * | 2003-09-29 | 2008-05-06 | Samsung Electronics Co., Ltd. | Methods of operating a magnetic random access memory device and related devices and structures |
| KR100835275B1 (ko) * | 2004-08-12 | 2008-06-05 | 삼성전자주식회사 | 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들 |
| KR100568512B1 (ko) * | 2003-09-29 | 2006-04-07 | 삼성전자주식회사 | 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들 |
| KR100615089B1 (ko) * | 2004-07-14 | 2006-08-23 | 삼성전자주식회사 | 낮은 구동 전류를 갖는 자기 램 |
| JP2005129801A (ja) * | 2003-10-24 | 2005-05-19 | Sony Corp | 磁気記憶素子及び磁気メモリ |
| JP4631267B2 (ja) * | 2003-10-27 | 2011-02-16 | ソニー株式会社 | 磁気記憶素子及び磁気メモリ |
| US7286421B2 (en) * | 2003-10-28 | 2007-10-23 | International Business Machines Corporation | Active compensation for operating point drift in MRAM write operation |
| US7045838B2 (en) * | 2003-10-31 | 2006-05-16 | International Business Machines Corporation | Techniques for coupling in semiconductor devices and magnetic device using these techniques |
| JP4765248B2 (ja) * | 2003-11-10 | 2011-09-07 | ソニー株式会社 | 磁気メモリ |
| US7602000B2 (en) * | 2003-11-19 | 2009-10-13 | International Business Machines Corporation | Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element |
| US7370260B2 (en) * | 2003-12-16 | 2008-05-06 | Freescale Semiconductor, Inc. | MRAM having error correction code circuitry and method therefor |
| US7088608B2 (en) * | 2003-12-16 | 2006-08-08 | Freescale Semiconductor, Inc. | Reducing power consumption during MRAM writes using multiple current levels |
| JP4581394B2 (ja) * | 2003-12-22 | 2010-11-17 | ソニー株式会社 | 磁気メモリ |
| JP3935150B2 (ja) * | 2004-01-20 | 2007-06-20 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| JP3809445B2 (ja) * | 2004-03-05 | 2006-08-16 | 株式会社東芝 | 磁気抵抗ランダムアクセスメモリおよびその駆動方法 |
| WO2005086170A1 (ja) * | 2004-03-05 | 2005-09-15 | Nec Corporation | トグル型磁気ランダムアクセスメモリ |
| US7109539B2 (en) * | 2004-03-09 | 2006-09-19 | International Business Machines Corporation | Multiple-bit magnetic random access memory cell employing adiabatic switching |
| JP3908746B2 (ja) * | 2004-03-12 | 2007-04-25 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| JP2005260175A (ja) * | 2004-03-15 | 2005-09-22 | Sony Corp | 磁気メモリ及びその記録方法 |
| US7266486B2 (en) * | 2004-03-23 | 2007-09-04 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory simulation |
| US7414881B2 (en) * | 2004-03-31 | 2008-08-19 | Nec Corporation | Magnetization direction control method and application thereof to MRAM |
| JP2005310840A (ja) * | 2004-04-16 | 2005-11-04 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| FR2869445B1 (fr) * | 2004-04-26 | 2006-07-07 | St Microelectronics Sa | Element de memoire vive magnetique |
| US7274057B2 (en) * | 2004-04-26 | 2007-09-25 | International Business Machines Corporation | Techniques for spin-flop switching with offset field |
| US7154798B2 (en) * | 2004-04-27 | 2006-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM arrays and methods for writing and reading magnetic memory devices |
| WO2005114671A1 (en) | 2004-05-18 | 2005-12-01 | Koninklijke Philips Electronics N.V. | Digital magnetic current sensor and logic |
| US7502248B2 (en) * | 2004-05-21 | 2009-03-10 | Samsung Electronics Co., Ltd. | Multi-bit magnetic random access memory device |
| US7506236B2 (en) * | 2004-05-28 | 2009-03-17 | International Business Machines Corporation | Techniques for operating semiconductor devices |
| US7102916B2 (en) * | 2004-06-30 | 2006-09-05 | International Business Machines Corporation | Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption |
| US7187576B2 (en) | 2004-07-19 | 2007-03-06 | Infineon Technologies Ag | Read out scheme for several bits in a single MRAM soft layer |
| JP4460965B2 (ja) * | 2004-07-22 | 2010-05-12 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| US7576956B2 (en) * | 2004-07-26 | 2009-08-18 | Grandis Inc. | Magnetic tunnel junction having diffusion stop layer |
| US7098495B2 (en) * | 2004-07-26 | 2006-08-29 | Freescale Semiconducor, Inc. | Magnetic tunnel junction element structures and methods for fabricating the same |
| KR100660539B1 (ko) * | 2004-07-29 | 2006-12-22 | 삼성전자주식회사 | 자기 기억 소자 및 그 형성 방법 |
| US7075807B2 (en) * | 2004-08-18 | 2006-07-11 | Infineon Technologies Ag | Magnetic memory with static magnetic offset field |
| KR100568542B1 (ko) * | 2004-08-19 | 2006-04-07 | 삼성전자주식회사 | 자기 램 소자의 기록방법 |
| JP4868198B2 (ja) | 2004-08-19 | 2012-02-01 | 日本電気株式会社 | 磁性メモリ |
| US7092284B2 (en) * | 2004-08-20 | 2006-08-15 | Infineon Technologies Ag | MRAM with magnetic via for storage of information and field sensor |
| US7088612B2 (en) * | 2004-08-20 | 2006-08-08 | Infineon Technologies Ag | MRAM with vertical storage element in two layer-arrangement and field sensor |
| US7200032B2 (en) * | 2004-08-20 | 2007-04-03 | Infineon Technologies Ag | MRAM with vertical storage element and field sensor |
| US7916520B2 (en) * | 2004-08-25 | 2011-03-29 | Nec Corporation | Memory cell and magnetic random access memory |
| JP4822126B2 (ja) * | 2004-08-26 | 2011-11-24 | 日本電気株式会社 | 磁気抵抗素子及び磁気ランダムアクセスメモリ |
| JP2006086362A (ja) * | 2004-09-16 | 2006-03-30 | Toshiba Corp | 磁気記憶装置 |
| JP3962048B2 (ja) * | 2004-09-28 | 2007-08-22 | 株式会社東芝 | 半導体メモリ |
| US8179711B2 (en) * | 2004-10-26 | 2012-05-15 | Samsung Electronics Co., Ltd. | Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell |
| US20060092688A1 (en) * | 2004-10-29 | 2006-05-04 | International Business Machines Corporation | Stacked magnetic devices |
| JP3959417B2 (ja) * | 2004-10-29 | 2007-08-15 | 株式会社東芝 | 半導体メモリの読み出し回路 |
| US6937497B1 (en) | 2004-11-18 | 2005-08-30 | Maglabs, Inc. | Magnetic random access memory with stacked toggle memory cells |
| US6992910B1 (en) * | 2004-11-18 | 2006-01-31 | Maglabs, Inc. | Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell |
| WO2006054469A1 (ja) * | 2004-11-22 | 2006-05-26 | Nec Corporation | 強磁性膜、磁気抵抗素子、及び磁気ランダムアクセスメモリ |
| US7129098B2 (en) * | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
| JP4388008B2 (ja) * | 2004-11-30 | 2009-12-24 | 株式会社東芝 | 半導体記憶装置 |
| US7088611B2 (en) * | 2004-11-30 | 2006-08-08 | Infineon Technologies Ag | MRAM with switchable ferromagnetic offset layer |
| DE602005022398D1 (de) | 2004-11-30 | 2010-09-02 | Toshiba Kk | Anordnung der Schreiblinien in einer MRAM-Vorrichtung |
| JP2006156844A (ja) | 2004-11-30 | 2006-06-15 | Toshiba Corp | 半導体記憶装置 |
| US7200033B2 (en) * | 2004-11-30 | 2007-04-03 | Altis Semiconductor | MRAM with coil for creating offset field |
| JP4891092B2 (ja) * | 2004-12-01 | 2012-03-07 | 日本電気株式会社 | 磁気ランダムアクセスメモリ、その動作方法及びその製造方法 |
| JP2006165327A (ja) * | 2004-12-08 | 2006-06-22 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| JPWO2006062150A1 (ja) * | 2004-12-10 | 2008-06-12 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
| JP4012196B2 (ja) * | 2004-12-22 | 2007-11-21 | 株式会社東芝 | 磁気ランダムアクセスメモリのデータ書き込み方法 |
| US7622784B2 (en) * | 2005-01-10 | 2009-11-24 | International Business Machines Corporation | MRAM device with improved stack structure and offset field for low-power toggle mode writing |
| US7133309B2 (en) * | 2005-01-10 | 2006-11-07 | International Business Machines Corporation | Method and structure for generating offset fields for use in MRAM devices |
| EP1684305B1 (en) * | 2005-01-14 | 2011-05-11 | Bundesrepublik Deutschland, vertr. durch das Bundesministerium f. Wirtschaft und Technologie, | Magnetic memory device and method of magnetization reversal of the magnetization of at least one magnetic memory element |
| US20060171197A1 (en) * | 2005-01-31 | 2006-08-03 | Ulrich Klostermann | Magnetoresistive memory element having a stacked structure |
| US7543211B2 (en) * | 2005-01-31 | 2009-06-02 | Everspin Technologies, Inc. | Toggle memory burst |
| US7646628B2 (en) | 2005-02-09 | 2010-01-12 | Nec Corporation | Toggle magnetic random access memory and write method of toggle magnetic random access memory |
| US7154771B2 (en) * | 2005-02-09 | 2006-12-26 | Infineon Technologies Ag | Method of switching an MRAM cell comprising bidirectional current generation |
| US7180113B2 (en) * | 2005-02-10 | 2007-02-20 | Infineon Technologies Ag | Double-decker MRAM cell with rotated reference layer magnetizations |
| US7099186B1 (en) * | 2005-02-10 | 2006-08-29 | Infineon Technologies Ag | Double-decker MRAM cells with scissor-state angled reference layer magnetic anisotropy and method for fabricating |
| JP5077802B2 (ja) * | 2005-02-16 | 2012-11-21 | 日本電気株式会社 | 積層強磁性構造体、及び、ｍｔｊ素子 |
| US20080273381A1 (en) * | 2005-03-01 | 2008-11-06 | Siu-Tat Chui | Method for Switching Random Access Memory Elements and Magnetic Element Structures |
| US20070263430A1 (en) * | 2006-05-15 | 2007-11-15 | Siu-Tat Chui | Method for switching magnetic random access memory elements and magnetic element structures |
| US7102919B1 (en) * | 2005-03-11 | 2006-09-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods and devices for determining writing current for memory cells |
| WO2006104002A1 (ja) * | 2005-03-29 | 2006-10-05 | Nec Corporation | 磁気ランダムアクセスメモリ |
| US7298597B2 (en) * | 2005-03-29 | 2007-11-20 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling |
| JP2006294179A (ja) * | 2005-04-14 | 2006-10-26 | Renesas Technology Corp | 不揮発性記憶装置 |
| US7205596B2 (en) * | 2005-04-29 | 2007-04-17 | Infineon Technologies, Ag | Adiabatic rotational switching memory element including a ferromagnetic decoupling layer |
| US7158407B2 (en) * | 2005-04-29 | 2007-01-02 | Freescale Semiconductor, Inc. | Triple pulse method for MRAM toggle bit characterization |
| JP4877575B2 (ja) * | 2005-05-19 | 2012-02-15 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
| US7453720B2 (en) * | 2005-05-26 | 2008-11-18 | Maglabs, Inc. | Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing |
| WO2006129725A1 (ja) * | 2005-06-03 | 2006-12-07 | Nec Corporation | Ｍｒａｍ |
| JP2006344653A (ja) | 2005-06-07 | 2006-12-21 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| WO2007015358A1 (ja) * | 2005-08-02 | 2007-02-08 | Nec Corporation | 磁気ランダムアクセスメモリ及びその動作方法 |
| JP5050853B2 (ja) * | 2005-08-02 | 2012-10-17 | 日本電気株式会社 | Ｍｒａｍ |
| US7420837B2 (en) * | 2005-08-03 | 2008-09-02 | Industrial Technology Research Institute | Method for switching magnetic moment in magnetoresistive random access memory with low current |
| KR100915975B1 (ko) * | 2005-08-03 | 2009-09-10 | 인더스트리얼 테크놀로지 리서치 인스티튜트 | 저전류로 자기저항 랜덤 액세스 메모리의 자기 모멘트를전환하는 방법 |
| JP5062481B2 (ja) * | 2005-08-15 | 2012-10-31 | 日本電気株式会社 | 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法 |
| US7224601B2 (en) | 2005-08-25 | 2007-05-29 | Grandis Inc. | Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element |
| JP5035620B2 (ja) * | 2005-09-14 | 2012-09-26 | 日本電気株式会社 | 磁気ランダムアクセスメモリの波形整形回路 |
| US7777261B2 (en) | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
| US7859034B2 (en) * | 2005-09-20 | 2010-12-28 | Grandis Inc. | Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer |
| US7973349B2 (en) * | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
| JP2007087524A (ja) * | 2005-09-22 | 2007-04-05 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
| WO2007040167A1 (ja) * | 2005-10-03 | 2007-04-12 | Nec Corporation | 磁気ランダムアクセスメモリ |
| US8089803B2 (en) * | 2005-10-03 | 2012-01-03 | Nec Corporation | Magnetic random access memory and operating method of the same |
| JP4853735B2 (ja) * | 2005-10-18 | 2012-01-11 | 日本電気株式会社 | Ｍｒａｍ、及びその動作方法 |
| US8281221B2 (en) * | 2005-10-18 | 2012-10-02 | Nec Corporation | Operation method of MRAM including correcting data for single-bit error and multi-bit error |
| US7352613B2 (en) * | 2005-10-21 | 2008-04-01 | Macronix International Co., Ltd. | Magnetic memory device and methods for making a magnetic memory device |
| US7301801B2 (en) | 2005-10-28 | 2007-11-27 | International Business Machines Corporation | Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers |
| US7569902B2 (en) * | 2005-10-28 | 2009-08-04 | Board Of Trustees Of The University Of Alabama | Enhanced toggle-MRAM memory device |
| US7257019B2 (en) * | 2005-11-17 | 2007-08-14 | Macronix International Co., Ltd. | Systems and methods for a magnetic memory device that includes a single word line transistor |
| US7352614B2 (en) * | 2005-11-17 | 2008-04-01 | Macronix International Co., Ltd. | Systems and methods for reading and writing a magnetic memory device |
| US7203089B1 (en) * | 2005-11-17 | 2007-04-10 | Macronix International Co., Ltd. | Systems and methods for a magnetic memory device that includes two word line transistors |
| US7313043B2 (en) * | 2005-11-29 | 2007-12-25 | Altis Semiconductor Snc | Magnetic Memory Array |
| JP5068016B2 (ja) | 2005-11-30 | 2012-11-07 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶装置 |
| US7280388B2 (en) * | 2005-12-07 | 2007-10-09 | Nahas Joseph J | MRAM with a write driver and method therefor |
| US7206223B1 (en) | 2005-12-07 | 2007-04-17 | Freescale Semiconductor, Inc. | MRAM memory with residual write field reset |
| US7430135B2 (en) * | 2005-12-23 | 2008-09-30 | Grandis Inc. | Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density |
| TWI279802B (en) | 2005-12-30 | 2007-04-21 | Ind Tech Res Inst | Memory structure and the write method |
| US7755153B2 (en) * | 2006-01-13 | 2010-07-13 | Macronix International Co. Ltd. | Structure and method for a magnetic memory device with proximity writing |
| US7577017B2 (en) * | 2006-01-20 | 2009-08-18 | Industrial Technology Research Institute | High-bandwidth magnetoresistive random access memory devices and methods of operation thereof |
| US7463510B2 (en) * | 2006-01-20 | 2008-12-09 | Industrial Technology Research Institute | High-bandwidth magnetoresistive random access memory devices |
| TWI312153B (en) * | 2006-01-20 | 2009-07-11 | Ind Tech Res Inst | Power source for magnetic random access memory and magnetic random access memory using the same |
| US7368301B2 (en) * | 2006-01-27 | 2008-05-06 | Magic Technologies, Inc. | Magnetic random access memory with selective toggle memory cells |
| US7280389B2 (en) * | 2006-02-08 | 2007-10-09 | Magic Technologies, Inc. | Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications |
| US20070187785A1 (en) * | 2006-02-16 | 2007-08-16 | Chien-Chung Hung | Magnetic memory cell and manufacturing method thereof |
| TWI300224B (en) * | 2006-02-21 | 2008-08-21 | Ind Tech Res Inst | Structure of magnetic memory cell and magnetic memory device |
| US7894249B2 (en) * | 2006-02-27 | 2011-02-22 | Nec Corporation | Magnetoresistive element and magnetic random access memory |
| US20080055792A1 (en) * | 2006-03-07 | 2008-03-06 | Agency For Science, Technology And Research | Memory cells and devices having magnetoresistive tunnel junction with guided magnetic moment switching and method |
| JP4406407B2 (ja) * | 2006-03-13 | 2010-01-27 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| CN100593822C (zh) * | 2006-03-14 | 2010-03-10 | 财团法人工业技术研究院 | 磁性存储单元结构与磁性存储装置 |
| JPWO2007119446A1 (ja) | 2006-03-24 | 2009-08-27 | 日本電気株式会社 | Ｍｒａｍ、及びｍｒａｍのデータ読み書き方法 |
| US20070246787A1 (en) * | 2006-03-29 | 2007-10-25 | Lien-Chang Wang | On-plug magnetic tunnel junction devices based on spin torque transfer switching |
| JP2007273523A (ja) * | 2006-03-30 | 2007-10-18 | Tdk Corp | 磁気メモリ及びスピン注入方法 |
| TWI320929B (en) * | 2006-04-18 | 2010-02-21 | Ind Tech Res Inst | Structure and access method for magnetic memory cell structure and circuit of magnetic memory |
| US7349243B2 (en) * | 2006-04-20 | 2008-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3-parameter switching technique for use in MRAM memory arrays |
| US20070247939A1 (en) * | 2006-04-21 | 2007-10-25 | Nahas Joseph J | Mram array with reference cell row and methof of operation |
| TWI300225B (en) * | 2006-04-28 | 2008-08-21 | Ind Tech Res Inst | Method for accessing data on magnetic memory |
| EP1863034B1 (en) * | 2006-05-04 | 2011-01-05 | Hitachi, Ltd. | Magnetic memory device |
| CN100565699C (zh) * | 2006-05-09 | 2009-12-02 | 财团法人工业技术研究院 | 磁性存储器的资料存取方法 |
| US7728384B2 (en) * | 2006-05-30 | 2010-06-01 | Macronix International Co., Ltd. | Magnetic random access memory using single crystal self-aligned diode |
| US8497538B2 (en) | 2006-05-31 | 2013-07-30 | Everspin Technologies, Inc. | MRAM synthetic antiferromagnet structure |
| US7535069B2 (en) * | 2006-06-14 | 2009-05-19 | International Business Machines Corporation | Magnetic tunnel junction with enhanced magnetic switching characteristics |
| JP4518049B2 (ja) * | 2006-07-03 | 2010-08-04 | ソニー株式会社 | 記憶装置 |
| US7433225B2 (en) * | 2006-07-06 | 2008-10-07 | International Business Machines Corporation | Scalable magnetic random access memory device |
| US7502249B1 (en) * | 2006-07-17 | 2009-03-10 | Grandis, Inc. | Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements |
| US8693238B2 (en) * | 2006-08-07 | 2014-04-08 | Nec Corporation | MRAM having variable word line drive potential |
| US7851840B2 (en) * | 2006-09-13 | 2010-12-14 | Grandis Inc. | Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier |
| WO2008047536A1 (fr) * | 2006-10-16 | 2008-04-24 | Nec Corporation | Cellule mémoire magnétique et mémoire vive magnétique |
| JP2008117930A (ja) * | 2006-11-02 | 2008-05-22 | Sony Corp | 記憶素子、メモリ |
| US8300456B2 (en) * | 2006-12-06 | 2012-10-30 | Nec Corporation | Magnetic random access memory and method of manufacturing the same |
| US7453740B2 (en) | 2007-01-19 | 2008-11-18 | International Business Machines Corporation | Method and apparatus for initializing reference cells of a toggle switched MRAM device |
| TWI320930B (en) * | 2007-01-29 | 2010-02-21 | Ind Tech Res Inst | Direct writing method on magnetic memory cell and magetic memory cell structure |
| US7719882B2 (en) * | 2007-02-06 | 2010-05-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Advanced MRAM design |
| WO2008099626A1 (ja) | 2007-02-13 | 2008-08-21 | Nec Corporation | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ |
| TWI324344B (en) * | 2007-02-16 | 2010-05-01 | Ind Tech Res Inst | Writing method on magnetic memory cell and magetic memory array structure |
| US8009466B2 (en) | 2007-02-21 | 2011-08-30 | Nec Corporation | Semiconductor storage device |
| JP4438806B2 (ja) * | 2007-02-21 | 2010-03-24 | ソニー株式会社 | メモリ |
| TWI333208B (en) * | 2007-03-26 | 2010-11-11 | Ind Tech Res Inst | Magnetic memory and method for manufacturing the same |
| US7599215B2 (en) * | 2007-03-30 | 2009-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetoresistive random access memory device with small-angle toggle write lines |
| US8510633B2 (en) * | 2007-04-17 | 2013-08-13 | Nec Corporation | Semiconductor storage device and method of operating the same |
| US7539047B2 (en) * | 2007-05-08 | 2009-05-26 | Honeywell International, Inc. | MRAM cell with multiple storage elements |
| TWI333207B (en) * | 2007-05-30 | 2010-11-11 | Ind Tech Res Inst | Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device |
| WO2009001706A1 (ja) | 2007-06-25 | 2008-12-31 | Nec Corporation | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ |
| US7957179B2 (en) * | 2007-06-27 | 2011-06-07 | Grandis Inc. | Magnetic shielding in magnetic multilayer structures |
| US20090034321A1 (en) | 2007-08-01 | 2009-02-05 | Honeywell International Inc. | Magnetoresistive Element with a Biasing Layer |
| WO2009019949A1 (ja) * | 2007-08-03 | 2009-02-12 | Nec Corporation | 磁気ランダムアクセスメモリ及びその製造方法 |
| JP5338666B2 (ja) * | 2007-08-03 | 2013-11-13 | 日本電気株式会社 | 磁壁ランダムアクセスメモリ |
| TW200907964A (en) * | 2007-08-09 | 2009-02-16 | Ind Tech Res Inst | Structure of magnetic memory cell and magnetic memory device |
| TWI415124B (zh) * | 2007-08-09 | 2013-11-11 | Ind Tech Res Inst | 磁性隨機存取記憶體 |
| US7982275B2 (en) | 2007-08-22 | 2011-07-19 | Grandis Inc. | Magnetic element having low saturation magnetization |
| JP5445133B2 (ja) * | 2007-09-19 | 2014-03-19 | 日本電気株式会社 | 磁気ランダムアクセスメモリ、その書き込み方法、及び磁気抵抗効果素子 |
| US9812184B2 (en) | 2007-10-31 | 2017-11-07 | New York University | Current induced spin-momentum transfer stack with dual insulating layers |
| US7596045B2 (en) * | 2007-10-31 | 2009-09-29 | International Business Machines Corporation | Design structure for initializing reference cells of a toggle switched MRAM device |
| KR101237005B1 (ko) | 2007-11-09 | 2013-02-26 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치, 이를 포함하는메모리 시스템, 및 이의 구동 방법 |
| KR101291721B1 (ko) * | 2007-12-03 | 2013-07-31 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치, 이를 포함하는메모리 시스템 |
| TWI343055B (en) * | 2007-12-10 | 2011-06-01 | Ind Tech Res Inst | Magnetic memory cell structure with thermal assistant and magnetic random access memory |
| KR101365683B1 (ko) * | 2007-12-27 | 2014-02-20 | 삼성전자주식회사 | 가변 저항 메모리 장치, 그것의 플렉서블 프로그램 방법,그리고 그것을 포함하는 메모리 시스템 |
| KR101424176B1 (ko) * | 2008-03-21 | 2014-07-31 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치, 이를 포함하는메모리 시스템 |
| KR20090109345A (ko) * | 2008-04-15 | 2009-10-20 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치, 이를 포함하는메모리 시스템 |
| US7894248B2 (en) * | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
| US7880209B2 (en) * | 2008-10-09 | 2011-02-01 | Seagate Technology Llc | MRAM cells including coupled free ferromagnetic layers for stabilization |
| GB2465370A (en) * | 2008-11-13 | 2010-05-19 | Ingenia Holdings | Magnetic data storage comprising a synthetic anti-ferromagnetic stack arranged to maintain solitons |
| KR20100058825A (ko) * | 2008-11-25 | 2010-06-04 | 삼성전자주식회사 | 저항체를 이용한 반도체 장치, 이를 이용한 카드 또는 시스템 및 상기 반도체 장치의 구동 방법 |
| JP2010135512A (ja) * | 2008-12-03 | 2010-06-17 | Sony Corp | 抵抗変化型メモリデバイス |
| JP2010134986A (ja) * | 2008-12-03 | 2010-06-17 | Sony Corp | 抵抗変化型メモリデバイス |
| US8184476B2 (en) * | 2008-12-26 | 2012-05-22 | Everspin Technologies, Inc. | Random access memory architecture including midpoint reference |
| KR20100097407A (ko) * | 2009-02-26 | 2010-09-03 | 삼성전자주식회사 | 저항성 메모리 장치, 이를 포함하는 메모리 시스템 및 저항성 메모리 장치의 프로그램 방법 |
| KR20100107609A (ko) * | 2009-03-26 | 2010-10-06 | 삼성전자주식회사 | 저항성 메모리 장치, 이를 포함하는 메모리 시스템 및 저항성 메모리 장치의 기입 방법 |
| FR2946183B1 (fr) * | 2009-05-27 | 2011-12-23 | Commissariat Energie Atomique | Dispositif magnetique a polarisation de spin. |
| JP2011008849A (ja) * | 2009-06-24 | 2011-01-13 | Sony Corp | メモリ及び書き込み制御方法 |
| US8411493B2 (en) | 2009-10-30 | 2013-04-02 | Honeywell International Inc. | Selection device for a spin-torque transfer magnetic random access memory |
| JPWO2011065323A1 (ja) | 2009-11-27 | 2013-04-11 | 日本電気株式会社 | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ |
| US8411497B2 (en) | 2010-05-05 | 2013-04-02 | Grandis, Inc. | Method and system for providing a magnetic field aligned spin transfer torque random access memory |
| GB201015497D0 (en) | 2010-09-16 | 2010-10-27 | Cambridge Entpr Ltd | Magnetic data storage |
| GB201020727D0 (en) | 2010-12-07 | 2011-01-19 | Cambridge Entpr Ltd | Magnetic structure |
| US8339843B2 (en) | 2010-12-17 | 2012-12-25 | Honeywell International Inc. | Generating a temperature-compensated write current for a magnetic memory cell |
| US8467234B2 (en) | 2011-02-08 | 2013-06-18 | Crocus Technology Inc. | Magnetic random access memory devices configured for self-referenced read operation |
| JP5686626B2 (ja) | 2011-02-22 | 2015-03-18 | ルネサスエレクトロニクス株式会社 | 磁気メモリ及びその製造方法 |
| US8576615B2 (en) | 2011-06-10 | 2013-11-05 | Crocus Technology Inc. | Magnetic random access memory devices including multi-bit cells |
| US8488372B2 (en) * | 2011-06-10 | 2013-07-16 | Crocus Technology Inc. | Magnetic random access memory devices including multi-bit cells |
| US8525709B2 (en) * | 2011-09-21 | 2013-09-03 | Qualcomm Incorporated | Systems and methods for designing ADC based on probabilistic switching of memories |
| US9082950B2 (en) | 2012-10-17 | 2015-07-14 | New York University | Increased magnetoresistance in an inverted orthogonal spin transfer layer stack |
| US9082888B2 (en) | 2012-10-17 | 2015-07-14 | New York University | Inverted orthogonal spin transfer layer stack |
| US8982613B2 (en) | 2013-06-17 | 2015-03-17 | New York University | Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates |
| US9263667B1 (en) | 2014-07-25 | 2016-02-16 | Spin Transfer Technologies, Inc. | Method for manufacturing MTJ memory device |
| US9337412B2 (en) | 2014-09-22 | 2016-05-10 | Spin Transfer Technologies, Inc. | Magnetic tunnel junction structure for MRAM device |
| US9384827B1 (en) | 2015-03-05 | 2016-07-05 | Northrop Grumman Systems Corporation | Timing control in a quantum memory system |
| US10468590B2 (en) | 2015-04-21 | 2019-11-05 | Spin Memory, Inc. | High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory |
| US9728712B2 (en) | 2015-04-21 | 2017-08-08 | Spin Transfer Technologies, Inc. | Spin transfer torque structure for MRAM devices having a spin current injection capping layer |
| WO2016198886A1 (en) | 2015-06-10 | 2016-12-15 | The University Of Nottingham | Magnetic storage devices and methods |
| US9853206B2 (en) | 2015-06-16 | 2017-12-26 | Spin Transfer Technologies, Inc. | Precessional spin current structure for MRAM |
| US9773974B2 (en) | 2015-07-30 | 2017-09-26 | Spin Transfer Technologies, Inc. | Polishing stop layer(s) for processing arrays of semiconductor elements |
| US10163479B2 (en) | 2015-08-14 | 2018-12-25 | Spin Transfer Technologies, Inc. | Method and apparatus for bipolar memory write-verify |
| US9741926B1 (en) | 2016-01-28 | 2017-08-22 | Spin Transfer Technologies, Inc. | Memory cell having magnetic tunnel junction and thermal stability enhancement layer |
| US9721636B1 (en) | 2016-01-28 | 2017-08-01 | Western Digital Technologies, Inc. | Method for controlled switching of a MRAM device |
| US10437491B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register |
| US10366774B2 (en) | 2016-09-27 | 2019-07-30 | Spin Memory, Inc. | Device with dynamic redundancy registers |
| US10437723B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device |
| US11119936B2 (en) | 2016-09-27 | 2021-09-14 | Spin Memory, Inc. | Error cache system with coarse and fine segments for power optimization |
| US10460781B2 (en) | 2016-09-27 | 2019-10-29 | Spin Memory, Inc. | Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank |
| US11151042B2 (en) | 2016-09-27 | 2021-10-19 | Integrated Silicon Solution, (Cayman) Inc. | Error cache segmentation for power reduction |
| US10991410B2 (en) | 2016-09-27 | 2021-04-27 | Spin Memory, Inc. | Bi-polar write scheme |
| US10628316B2 (en) | 2016-09-27 | 2020-04-21 | Spin Memory, Inc. | Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register |
| US11119910B2 (en) | 2016-09-27 | 2021-09-14 | Spin Memory, Inc. | Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments |
| US10818331B2 (en) | 2016-09-27 | 2020-10-27 | Spin Memory, Inc. | Multi-chip module for MRAM devices with levels of dynamic redundancy registers |
| US10446210B2 (en) | 2016-09-27 | 2019-10-15 | Spin Memory, Inc. | Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers |
| US10360964B2 (en) | 2016-09-27 | 2019-07-23 | Spin Memory, Inc. | Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device |
| US10546625B2 (en) | 2016-09-27 | 2020-01-28 | Spin Memory, Inc. | Method of optimizing write voltage based on error buffer occupancy |
| US10672976B2 (en) | 2017-02-28 | 2020-06-02 | Spin Memory, Inc. | Precessional spin current structure with high in-plane magnetization for MRAM |
| US10665777B2 (en) | 2017-02-28 | 2020-05-26 | Spin Memory, Inc. | Precessional spin current structure with non-magnetic insertion layer for MRAM |
| US10032978B1 (en) | 2017-06-27 | 2018-07-24 | Spin Transfer Technologies, Inc. | MRAM with reduced stray magnetic fields |
| US10489245B2 (en) | 2017-10-24 | 2019-11-26 | Spin Memory, Inc. | Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them |
| US10656994B2 (en) | 2017-10-24 | 2020-05-19 | Spin Memory, Inc. | Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques |
| US10481976B2 (en) | 2017-10-24 | 2019-11-19 | Spin Memory, Inc. | Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers |
| US10529439B2 (en) | 2017-10-24 | 2020-01-07 | Spin Memory, Inc. | On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects |
| US10679685B2 (en) | 2017-12-27 | 2020-06-09 | Spin Memory, Inc. | Shared bit line array architecture for magnetoresistive memory |
| US10811594B2 (en) | 2017-12-28 | 2020-10-20 | Spin Memory, Inc. | Process for hard mask development for MRAM pillar formation using photolithography |
| US10360962B1 (en) | 2017-12-28 | 2019-07-23 | Spin Memory, Inc. | Memory array with individually trimmable sense amplifiers |
| US10395711B2 (en) | 2017-12-28 | 2019-08-27 | Spin Memory, Inc. | Perpendicular source and bit lines for an MRAM array |
| US10395712B2 (en) | 2017-12-28 | 2019-08-27 | Spin Memory, Inc. | Memory array with horizontal source line and sacrificial bitline per virtual source |
| US10424726B2 (en) | 2017-12-28 | 2019-09-24 | Spin Memory, Inc. | Process for improving photoresist pillar adhesion during MRAM fabrication |
| US10516094B2 (en) | 2017-12-28 | 2019-12-24 | Spin Memory, Inc. | Process for creating dense pillars using multiple exposures for MRAM fabrication |
| US10891997B2 (en) | 2017-12-28 | 2021-01-12 | Spin Memory, Inc. | Memory array with horizontal source line and a virtual source line |
| US10236048B1 (en) | 2017-12-29 | 2019-03-19 | Spin Memory, Inc. | AC current write-assist in orthogonal STT-MRAM |
| US10840436B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture |
| US10546624B2 (en) | 2017-12-29 | 2020-01-28 | Spin Memory, Inc. | Multi-port random access memory |
| US10270027B1 (en) | 2017-12-29 | 2019-04-23 | Spin Memory, Inc. | Self-generating AC current assist in orthogonal STT-MRAM |
| US10886330B2 (en) | 2017-12-29 | 2021-01-05 | Spin Memory, Inc. | Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch |
| US10840439B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Magnetic tunnel junction (MTJ) fabrication methods and systems |
| US10199083B1 (en) | 2017-12-29 | 2019-02-05 | Spin Transfer Technologies, Inc. | Three-terminal MRAM with ac write-assist for low read disturb |
| US10784439B2 (en) | 2017-12-29 | 2020-09-22 | Spin Memory, Inc. | Precessional spin current magnetic tunnel junction devices and methods of manufacture |
| US10424723B2 (en) | 2017-12-29 | 2019-09-24 | Spin Memory, Inc. | Magnetic tunnel junction devices including an optimization layer |
| US10360961B1 (en) | 2017-12-29 | 2019-07-23 | Spin Memory, Inc. | AC current pre-charge write-assist in orthogonal STT-MRAM |
| US10367139B2 (en) | 2017-12-29 | 2019-07-30 | Spin Memory, Inc. | Methods of manufacturing magnetic tunnel junction devices |
| US10236047B1 (en) | 2017-12-29 | 2019-03-19 | Spin Memory, Inc. | Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM |
| US10141499B1 (en) | 2017-12-30 | 2018-11-27 | Spin Transfer Technologies, Inc. | Perpendicular magnetic tunnel junction device with offset precessional spin current layer |
| US10229724B1 (en) | 2017-12-30 | 2019-03-12 | Spin Memory, Inc. | Microwave write-assist in series-interconnected orthogonal STT-MRAM devices |
| US10255962B1 (en) | 2017-12-30 | 2019-04-09 | Spin Memory, Inc. | Microwave write-assist in orthogonal STT-MRAM |
| US10339993B1 (en) | 2017-12-30 | 2019-07-02 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching |
| US10319900B1 (en) | 2017-12-30 | 2019-06-11 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density |
| US10236439B1 (en) | 2017-12-30 | 2019-03-19 | Spin Memory, Inc. | Switching and stability control for perpendicular magnetic tunnel junction device |
| US10468588B2 (en) | 2018-01-05 | 2019-11-05 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer |
| US10438996B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Methods of fabricating magnetic tunnel junctions integrated with selectors |
| US10438995B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Devices including magnetic tunnel junctions integrated with selectors |
| US10388861B1 (en) | 2018-03-08 | 2019-08-20 | Spin Memory, Inc. | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same |
| US10446744B2 (en) | 2018-03-08 | 2019-10-15 | Spin Memory, Inc. | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same |
| US11107978B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
| US10784437B2 (en) | 2018-03-23 | 2020-09-22 | Spin Memory, Inc. | Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
| US11107974B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer |
| US20190296220A1 (en) | 2018-03-23 | 2019-09-26 | Spin Transfer Technologies, Inc. | Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer |
| US10411185B1 (en) | 2018-05-30 | 2019-09-10 | Spin Memory, Inc. | Process for creating a high density magnetic tunnel junction array test platform |
| US10600478B2 (en) | 2018-07-06 | 2020-03-24 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
| US10692569B2 (en) | 2018-07-06 | 2020-06-23 | Spin Memory, Inc. | Read-out techniques for multi-bit cells |
| US10559338B2 (en) | 2018-07-06 | 2020-02-11 | Spin Memory, Inc. | Multi-bit cell read-out techniques |
| US10593396B2 (en) | 2018-07-06 | 2020-03-17 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
| US10447278B1 (en) | 2018-07-17 | 2019-10-15 | Northrop Grumman Systems Corporation | JTL-based superconducting logic arrays and FPGAs |
| US10650875B2 (en) | 2018-08-21 | 2020-05-12 | Spin Memory, Inc. | System for a wide temperature range nonvolatile memory |
| US10818346B2 (en) | 2018-09-17 | 2020-10-27 | Northrop Grumman Systems Corporation | Quantizing loop memory cell system |
| US10699761B2 (en) | 2018-09-18 | 2020-06-30 | Spin Memory, Inc. | Word line decoder memory architecture |
| US10971680B2 (en) | 2018-10-01 | 2021-04-06 | Spin Memory, Inc. | Multi terminal device stack formation methods |
| US11621293B2 (en) | 2018-10-01 | 2023-04-04 | Integrated Silicon Solution, (Cayman) Inc. | Multi terminal device stack systems and methods |
| US10580827B1 (en) | 2018-11-16 | 2020-03-03 | Spin Memory, Inc. | Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching |
| US11107979B2 (en) | 2018-12-28 | 2021-08-31 | Spin Memory, Inc. | Patterned silicide structures and methods of manufacture |
| US11024791B1 (en) | 2020-01-27 | 2021-06-01 | Northrop Grumman Systems Corporation | Magnetically stabilized magnetic Josephson junction memory cell |
| US12080343B2 (en) * | 2021-10-28 | 2024-09-03 | William Robert Reohr | Read and write enhancements for arrays of superconducting magnetic memory cells |
Family Cites Families (297)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3163853A (en) | 1958-02-20 | 1964-12-29 | Sperry Rand Corp | Magnetic storage thin film |
| US3448438A (en) * | 1965-03-19 | 1969-06-03 | Hughes Aircraft Co | Thin film nondestructive memory |
| US3573760A (en) * | 1968-12-16 | 1971-04-06 | Ibm | High density thin film memory and method of operation |
| US3638199A (en) * | 1969-12-19 | 1972-01-25 | Ibm | Data-processing system with a storage having a plurality of simultaneously accessible locations |
| US3707706A (en) | 1970-11-04 | 1972-12-26 | Honeywell Inf Systems | Multiple state memory |
| US3913080A (en) | 1973-04-16 | 1975-10-14 | Electronic Memories & Magnetic | Multi-bit core storage |
| US4103315A (en) | 1977-06-24 | 1978-07-25 | International Business Machines Corporation | Antiferromagnetic-ferromagnetic exchange bias films |
| US4356523A (en) | 1980-06-09 | 1982-10-26 | Ampex Corporation | Narrow track magnetoresistive transducer assembly |
| US4351712A (en) | 1980-12-10 | 1982-09-28 | International Business Machines Corporation | Low energy ion beam oxidation process |
| CA1184532A (en) | 1981-06-19 | 1985-03-26 | Severin F. Sverre | Magnetic water conditioning device |
| JPS5845619A (ja) | 1981-09-09 | 1983-03-16 | Hitachi Ltd | 磁気抵抗効果型薄膜磁気ヘッド |
| JPS60500187A (ja) * | 1982-12-30 | 1985-02-07 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | データ処理システム |
| US4455626A (en) * | 1983-03-21 | 1984-06-19 | Honeywell Inc. | Thin film memory with magnetoresistive read-out |
| US4663685A (en) * | 1985-08-15 | 1987-05-05 | International Business Machines | Magnetoresistive read transducer having patterned longitudinal bias |
| US4780848A (en) | 1986-06-03 | 1988-10-25 | Honeywell Inc. | Magnetoresistive memory with multi-layer storage cells having layers of limited thickness |
| US4731757A (en) * | 1986-06-27 | 1988-03-15 | Honeywell Inc. | Magnetoresistive memory including thin film storage cells having tapered ends |
| US4751677A (en) * | 1986-09-16 | 1988-06-14 | Honeywell Inc. | Differential arrangement magnetic memory cell |
| US4754431A (en) * | 1987-01-28 | 1988-06-28 | Honeywell Inc. | Vialess shorting bars for magnetoresistive devices |
| JPH0721848B2 (ja) | 1987-02-17 | 1995-03-08 | シーゲイト テクノロジー インターナショナル | 磁気抵抗センサ及びその製造方法 |
| US4825325A (en) * | 1987-10-30 | 1989-04-25 | International Business Machines Corporation | Magnetoresistive read transducer assembly |
| JPH01214077A (ja) | 1988-02-22 | 1989-08-28 | Nec Corp | 磁気抵抗効果素子 |
| US5025419A (en) | 1988-03-31 | 1991-06-18 | Sony Corporation | Input/output circuit |
| US4884235A (en) | 1988-07-19 | 1989-11-28 | Thiele Alfred A | Micromagnetic memory package |
| JPH02288209A (ja) | 1989-04-28 | 1990-11-28 | Amorufuasu Denshi Device Kenkyusho:Kk | 多層磁性薄膜 |
| US5039655A (en) | 1989-07-28 | 1991-08-13 | Ampex Corporation | Thin film memory device having superconductor keeper for eliminating magnetic domain creep |
| JPH0661293B2 (ja) | 1989-08-30 | 1994-08-17 | 豊田合成株式会社 | カーテンレールの製造方法 |
| US5075247A (en) | 1990-01-18 | 1991-12-24 | Microunity Systems Engineering, Inc. | Method of making hall effect semiconductor memory cell |
| US5173873A (en) | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
| JP3483895B2 (ja) | 1990-11-01 | 2004-01-06 | 株式会社東芝 | 磁気抵抗効果膜 |
| JP2601022B2 (ja) * | 1990-11-30 | 1997-04-16 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5998040A (en) | 1990-12-10 | 1999-12-07 | Hitachi, Ltd. | Multilayer which shows magnetoresistive effect and magnetoresistive element using the same |
| US5159513A (en) | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
| US5284701A (en) * | 1991-02-11 | 1994-02-08 | Ashland Oil, Inc. | Carbon fiber reinforced coatings |
| CA2060835A1 (en) | 1991-02-11 | 1992-08-12 | Romney R. Katti | Integrated, non-volatile, high-speed analog random access memory |
| EP0507451B1 (en) | 1991-03-06 | 1998-06-17 | Mitsubishi Denki Kabushiki Kaisha | Magnetic thin film memory device |
| KR930008856B1 (ko) | 1991-05-15 | 1993-09-16 | 금성일렉트론 주식회사 | 혼합용액의 일정비율 혼합장치 |
| JP3065736B2 (ja) | 1991-10-01 | 2000-07-17 | 松下電器産業株式会社 | 半導体記憶装置 |
| US5258884A (en) | 1991-10-17 | 1993-11-02 | International Business Machines Corporation | Magnetoresistive read transducer containing a titanium and tungsten alloy spacer layer |
| US5251170A (en) | 1991-11-04 | 1993-10-05 | Nonvolatile Electronics, Incorporated | Offset magnetoresistive memory structures |
| US5268806A (en) | 1992-01-21 | 1993-12-07 | International Business Machines Corporation | Magnetoresistive transducer having tantalum lead conductors |
| US5285339A (en) * | 1992-02-28 | 1994-02-08 | International Business Machines Corporation | Magnetoresistive read transducer having improved bias profile |
| US5398200A (en) * | 1992-03-02 | 1995-03-14 | Motorola, Inc. | Vertically formed semiconductor random access memory device |
| US5347485A (en) | 1992-03-03 | 1994-09-13 | Mitsubishi Denki Kabushiki Kaisha | Magnetic thin film memory |
| US5329486A (en) | 1992-04-24 | 1994-07-12 | Motorola, Inc. | Ferromagnetic memory device |
| US5448515A (en) | 1992-09-02 | 1995-09-05 | Mitsubishi Denki Kabushiki Kaisha | Magnetic thin film memory and recording/reproduction method therefor |
| US5420819A (en) * | 1992-09-24 | 1995-05-30 | Nonvolatile Electronics, Incorporated | Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage |
| US5617071A (en) * | 1992-11-16 | 1997-04-01 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses |
| US5301079A (en) * | 1992-11-17 | 1994-04-05 | International Business Machines Corporation | Current biased magnetoresistive spin valve sensor |
| US5348894A (en) | 1993-01-27 | 1994-09-20 | Texas Instruments Incorporated | Method of forming electrical connections to high dielectric constant materials |
| US5343422A (en) | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
| US5396455A (en) * | 1993-04-30 | 1995-03-07 | International Business Machines Corporation | Magnetic non-volatile random access memory |
| JP3179937B2 (ja) | 1993-05-01 | 2001-06-25 | 株式会社東芝 | 半導体装置 |
| JP2629583B2 (ja) | 1993-05-13 | 1997-07-09 | 日本電気株式会社 | 磁気抵抗効果膜およびその製造方法 |
| US5349302A (en) | 1993-05-13 | 1994-09-20 | Honeywell Inc. | Sense amplifier input stage for single array memory |
| DE4327458C2 (de) | 1993-08-16 | 1996-09-05 | Inst Mikrostrukturtechnologie | Sensorchip zur hochauflösenden Messung der magnetischen Feldstärke |
| JPH0766033A (ja) | 1993-08-30 | 1995-03-10 | Mitsubishi Electric Corp | 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ |
| JP3223480B2 (ja) | 1993-09-10 | 2001-10-29 | 本田技研工業株式会社 | 内燃エンジンの蒸発燃料処理装置 |
| US5477482A (en) | 1993-10-01 | 1995-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Ultra high density, non-volatile ferromagnetic random access memory |
| US5408377A (en) * | 1993-10-15 | 1995-04-18 | International Business Machines Corporation | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor |
| US5832534A (en) | 1994-01-04 | 1998-11-03 | Intel Corporation | Method and apparatus for maintaining cache coherency using a single controller for multiple cache memories |
| US5841611A (en) | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
| US5442508A (en) | 1994-05-25 | 1995-08-15 | Eastman Kodak Company | Giant magnetoresistive reproduce head having dual magnetoresistive sensor |
| US5528440A (en) | 1994-07-26 | 1996-06-18 | International Business Machines Corporation | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element |
| US5452243A (en) | 1994-07-27 | 1995-09-19 | Cypress Semiconductor Corporation | Fully static CAM cells with low write power and methods of matching and writing to the same |
| JPH0896328A (ja) | 1994-09-22 | 1996-04-12 | Sumitomo Metal Ind Ltd | 磁気抵抗効果型薄膜磁気ヘッド及びその製造方法 |
| EP0731969B1 (en) | 1994-10-05 | 1999-12-01 | Koninklijke Philips Electronics N.V. | Magnetic multilayer device including a resonant-tunneling double-barrier structure |
| US5985356A (en) | 1994-10-18 | 1999-11-16 | The Regents Of The University Of California | Combinatorial synthesis of novel materials |
| US6045671A (en) | 1994-10-18 | 2000-04-04 | Symyx Technologies, Inc. | Systems and methods for the combinatorial synthesis of novel materials |
| US5567523A (en) | 1994-10-19 | 1996-10-22 | Kobe Steel Research Laboratories, Usa, Applied Electronics Center | Magnetic recording medium comprising a carbon substrate, a silicon or aluminum nitride sub layer, and a barium hexaferrite magnetic layer |
| JP3714696B2 (ja) | 1994-10-21 | 2005-11-09 | 富士通株式会社 | 半導体記憶装置 |
| US6189077B1 (en) * | 1994-12-15 | 2001-02-13 | Texas Instruments Incorporated | Two computer access circuit using address translation into common register file |
| US5496759A (en) * | 1994-12-29 | 1996-03-05 | Honeywell Inc. | Highly producible magnetoresistive RAM process |
| US5534793A (en) | 1995-01-24 | 1996-07-09 | Texas Instruments Incorporated | Parallel antifuse routing scheme (PARS) circuit and method for field programmable gate arrays |
| US6004654A (en) | 1995-02-01 | 1999-12-21 | Tdk Corporation | Magnetic multilayer film, magnetoresistance element, and method for preparing magnetoresistance element |
| US5587943A (en) | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
| US5541868A (en) | 1995-02-21 | 1996-07-30 | The United States Of America As Represented By The Secretary Of The Navy | Annular GMR-based memory element |
| JPH08287422A (ja) | 1995-04-07 | 1996-11-01 | Alps Electric Co Ltd | 磁気抵抗効果型ヘッド |
| US6169687B1 (en) * | 1995-04-21 | 2001-01-02 | Mark B. Johnson | High density and speed magneto-electronic memory for use in computing system |
| US5585986A (en) | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
| JPH08321739A (ja) | 1995-05-25 | 1996-12-03 | Matsushita Electric Ind Co Ltd | 弾性表面波フィルタ |
| JP2778626B2 (ja) | 1995-06-02 | 1998-07-23 | 日本電気株式会社 | 磁気抵抗効果膜及びその製造方法並びに磁気抵抗効果素子 |
| WO1996041379A1 (en) | 1995-06-07 | 1996-12-19 | The Trustees Of Columbia University In The City Of New York | Wafer-scale integrated-circuit systems and method of manufacture |
| JP3560266B2 (ja) | 1995-08-31 | 2004-09-02 | 株式会社ルネサステクノロジ | 半導体装置及び半導体データ装置 |
| DE69520580T2 (de) | 1995-09-29 | 2001-10-04 | Stmicroelectronics S.R.L., Agrate Brianza | Hierarchische Speicheranordnung |
| US5702831A (en) | 1995-11-06 | 1997-12-30 | Motorola | Ferromagnetic GMR material |
| JP3767930B2 (ja) | 1995-11-13 | 2006-04-19 | 沖電気工業株式会社 | 情報の記録・再生方法および情報記憶装置 |
| US5659499A (en) | 1995-11-24 | 1997-08-19 | Motorola | Magnetic memory and method therefor |
| US5828578A (en) | 1995-11-29 | 1998-10-27 | S3 Incorporated | Microprocessor with a large cache shared by redundant CPUs for increasing manufacturing yield |
| JP3293437B2 (ja) * | 1995-12-19 | 2002-06-17 | 松下電器産業株式会社 | 磁気抵抗効果素子、磁気抵抗効果型ヘッド及びメモリー素子 |
| US5569617A (en) | 1995-12-21 | 1996-10-29 | Honeywell Inc. | Method of making integrated spacer for magnetoresistive RAM |
| US5712612A (en) * | 1996-01-02 | 1998-01-27 | Hewlett-Packard Company | Tunneling ferrimagnetic magnetoresistive sensor |
| JPH09199769A (ja) | 1996-01-19 | 1997-07-31 | Fujitsu Ltd | 磁気抵抗効果素子及び磁気センサ |
| US5909345A (en) * | 1996-02-22 | 1999-06-01 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device and magnetoresistive head |
| US5635765A (en) * | 1996-02-26 | 1997-06-03 | Cypress Semiconductor Corporation | Multi-layer gate structure |
| US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
| US5650958A (en) | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
| US6590750B2 (en) | 1996-03-18 | 2003-07-08 | International Business Machines Corporation | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices |
| US5764567A (en) | 1996-11-27 | 1998-06-09 | International Business Machines Corporation | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
| US5835314A (en) | 1996-04-17 | 1998-11-10 | Massachusetts Institute Of Technology | Tunnel junction device for storage and switching of signals |
| JP2924785B2 (ja) | 1996-04-25 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果素子薄膜及びその製造方法 |
| TW367493B (en) | 1996-04-30 | 1999-08-21 | Toshiba Corp | Reluctance component |
| JPH09306733A (ja) | 1996-05-14 | 1997-11-28 | Sumitomo Metal Ind Ltd | 磁気抵抗効果膜 |
| JPH09306159A (ja) | 1996-05-14 | 1997-11-28 | Nippon Telegr & Teleph Corp <Ntt> | 逐次読出しメモリ |
| JP3076244B2 (ja) | 1996-06-04 | 2000-08-14 | 日本電気株式会社 | 多層配線の研磨方法 |
| JPH09325746A (ja) | 1996-06-07 | 1997-12-16 | Sharp Corp | 電子機器 |
| JP3137580B2 (ja) | 1996-06-14 | 2001-02-26 | ティーディーケイ株式会社 | 磁性多層膜、磁気抵抗効果素子および磁気変換素子 |
| US5732016A (en) * | 1996-07-02 | 1998-03-24 | Motorola | Memory cell structure in a magnetic random access memory and a method for fabricating thereof |
| JPH1041132A (ja) | 1996-07-18 | 1998-02-13 | Sanyo Electric Co Ltd | 磁気抵抗効果膜 |
| US5905996A (en) * | 1996-07-29 | 1999-05-18 | Micron Technology, Inc. | Combined cache tag and data memory architecture |
| JP2856165B2 (ja) | 1996-08-12 | 1999-02-10 | 日本電気株式会社 | 磁気抵抗効果素子及びその製造方法 |
| US5920500A (en) | 1996-08-23 | 1999-07-06 | Motorola, Inc. | Magnetic random access memory having stacked memory cells and fabrication method therefor |
| US5745408A (en) * | 1996-09-09 | 1998-04-28 | Motorola, Inc. | Multi-layer magnetic memory cell with low switching current |
| US5734605A (en) | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
| US6249406B1 (en) | 1996-09-23 | 2001-06-19 | International Business Machines Corporation | Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction |
| JP3450657B2 (ja) | 1997-07-16 | 2003-09-29 | 株式会社東芝 | 半導体記憶装置 |
| US5894447A (en) * | 1996-09-26 | 1999-04-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device including a particular memory cell block structure |
| US5861328A (en) * | 1996-10-07 | 1999-01-19 | Motorola, Inc. | Method of fabricating GMR devices |
| US5699293A (en) | 1996-10-09 | 1997-12-16 | Motorola | Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device |
| US5835406A (en) | 1996-10-24 | 1998-11-10 | Micron Quantum Devices, Inc. | Apparatus and method for selecting data bits read from a multistate memory |
| US5757056A (en) * | 1996-11-12 | 1998-05-26 | University Of Delaware | Multiple magnetic tunnel structures |
| US5801984A (en) | 1996-11-27 | 1998-09-01 | International Business Machines Corporation | Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment |
| US5729410A (en) * | 1996-11-27 | 1998-03-17 | International Business Machines Corporation | Magnetic tunnel junction device with longitudinal biasing |
| JPH10162568A (ja) | 1996-12-02 | 1998-06-19 | Toshiba Corp | 半導体記憶装置 |
| US5748519A (en) * | 1996-12-13 | 1998-05-05 | Motorola, Inc. | Method of selecting a memory cell in a magnetic random access memory device |
| US5761110A (en) | 1996-12-23 | 1998-06-02 | Lsi Logic Corporation | Memory cell capable of storing more than two logic states by using programmable resistances |
| JP3325478B2 (ja) * | 1996-12-27 | 2002-09-17 | ワイケイケイ株式会社 | 磁気抵抗効果素子および磁気検出器並びにその使用方法 |
| US5804485A (en) | 1997-02-25 | 1998-09-08 | Miracle Technology Co Ltd | High density metal gate MOS fabrication process |
| US5902690A (en) * | 1997-02-25 | 1999-05-11 | Motorola, Inc. | Stray magnetic shielding for a non-volatile MRAM |
| EP0865079A3 (en) | 1997-03-13 | 1999-10-20 | Applied Materials, Inc. | A method for removing redeposited veils from etched platinum surfaces |
| JPH10270776A (ja) | 1997-03-25 | 1998-10-09 | Sanyo Electric Co Ltd | 磁気抵抗効果膜の製造方法 |
| JP2871670B1 (ja) | 1997-03-26 | 1999-03-17 | 富士通株式会社 | 強磁性トンネル接合磁気センサ、その製造方法、磁気ヘッド、および磁気記録／再生装置 |
| JP3735443B2 (ja) | 1997-04-03 | 2006-01-18 | 株式会社東芝 | 交換結合膜とそれを用いた磁気抵抗効果素子、磁気ヘッドおよび磁気記憶装置 |
| US5926414A (en) | 1997-04-04 | 1999-07-20 | Magnetic Semiconductors | High-efficiency miniature magnetic integrated circuit structures |
| US5768181A (en) | 1997-04-07 | 1998-06-16 | Motorola, Inc. | Magnetic device having multi-layer with insulating and conductive layers |
| US5774394A (en) | 1997-05-22 | 1998-06-30 | Motorola, Inc. | Magnetic memory cell with increased GMR ratio |
| US5898612A (en) * | 1997-05-22 | 1999-04-27 | Motorola, Inc. | Magnetic memory cell with increased GMR ratio |
| US5917749A (en) | 1997-05-23 | 1999-06-29 | Motorola, Inc. | MRAM cell requiring low switching field |
| JPH10334695A (ja) | 1997-05-27 | 1998-12-18 | Toshiba Corp | キャッシュメモリ及び情報処理システム |
| US5856008A (en) * | 1997-06-05 | 1999-01-05 | Lucent Technologies Inc. | Article comprising magnetoresistive material |
| US6134060A (en) | 1997-06-10 | 2000-10-17 | Stmicroelectronics, Inc. | Current bias, current sense for magneto-resistive preamplifier, preamplifying integrated circuit, and related methods |
| US5838608A (en) | 1997-06-16 | 1998-11-17 | Motorola, Inc. | Multi-layer magnetic random access memory and method for fabricating thereof |
| US5949696A (en) | 1997-06-30 | 1999-09-07 | Cypress Semiconductor Corporation | Differential dynamic content addressable memory and high speed network address filtering |
| US5804250A (en) | 1997-07-28 | 1998-09-08 | Eastman Kodak Company | Method for fabricating stable magnetoresistive sensors |
| JPH1168192A (ja) * | 1997-08-18 | 1999-03-09 | Hitachi Ltd | 多重トンネル接合、トンネル磁気抵抗効果素子、磁気センサおよび磁気記録センサヘッド |
| US6111784A (en) | 1997-09-18 | 2000-08-29 | Canon Kabushiki Kaisha | Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element |
| US5990011A (en) | 1997-09-18 | 1999-11-23 | Micron Technology, Inc. | Titanium aluminum alloy wetting layer for improved aluminum filling of damescene trenches |
| DE19744095A1 (de) | 1997-10-06 | 1999-04-15 | Siemens Ag | Speicherzellenanordnung |
| US5966012A (en) | 1997-10-07 | 1999-10-12 | International Business Machines Corporation | Magnetic tunnel junction device with improved fixed and free ferromagnetic layers |
| US5831920A (en) | 1997-10-14 | 1998-11-03 | Motorola, Inc. | GMR device having a sense amplifier protected by a circuit for dissipating electric charges |
| US5985365A (en) | 1997-10-17 | 1999-11-16 | Galvanizing Services Co., Inc. | Method and automated apparatus for galvanizing threaded rods |
| US6120842A (en) | 1997-10-21 | 2000-09-19 | Texas Instruments Incorporated | TiN+Al films and processes |
| JPH11134620A (ja) * | 1997-10-30 | 1999-05-21 | Nec Corp | 強磁性トンネル接合素子センサ及びその製造方法 |
| US6188549B1 (en) * | 1997-12-10 | 2001-02-13 | Read-Rite Corporation | Magnetoresistive read/write head with high-performance gap layers |
| US6048739A (en) * | 1997-12-18 | 2000-04-11 | Honeywell Inc. | Method of manufacturing a high density magnetic memory device |
| US5956267A (en) | 1997-12-18 | 1999-09-21 | Honeywell Inc | Self-aligned wordline keeper and method of manufacture therefor |
| US5959880A (en) | 1997-12-18 | 1999-09-28 | Motorola, Inc. | Low aspect ratio magnetoresistive tunneling junction |
| US5966323A (en) * | 1997-12-18 | 1999-10-12 | Motorola, Inc. | Low switching field magnetoresistive tunneling junction for high density arrays |
| US5852574A (en) | 1997-12-24 | 1998-12-22 | Motorola, Inc. | High density magnetoresistive random access memory device and operating method thereof |
| US6169303B1 (en) | 1998-01-06 | 2001-01-02 | Hewlett-Packard Company | Ferromagnetic tunnel junctions with enhanced magneto-resistance |
| US5946228A (en) | 1998-02-10 | 1999-08-31 | International Business Machines Corporation | Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices |
| US6072718A (en) | 1998-02-10 | 2000-06-06 | International Business Machines Corporation | Magnetic memory devices having multiple magnetic tunnel junctions therein |
| US6180444B1 (en) * | 1998-02-18 | 2001-01-30 | International Business Machines Corporation | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same |
| US6069820A (en) * | 1998-02-20 | 2000-05-30 | Kabushiki Kaisha Toshiba | Spin dependent conduction device |
| US5943574A (en) | 1998-02-23 | 1999-08-24 | Motorola, Inc. | Method of fabricating 3D multilayer semiconductor circuits |
| US5930164A (en) | 1998-02-26 | 1999-07-27 | Motorola, Inc. | Magnetic memory unit having four states and operating method thereof |
| US5986925A (en) | 1998-04-07 | 1999-11-16 | Motorola, Inc. | Magnetoresistive random access memory device providing simultaneous reading of two cells and operating method |
| JPH11316913A (ja) | 1998-04-30 | 1999-11-16 | Sony Corp | 磁気抵抗効果型磁気ヘッド |
| US6738236B1 (en) | 1998-05-07 | 2004-05-18 | Seagate Technology Llc | Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature |
| US6127045A (en) | 1998-05-13 | 2000-10-03 | International Business Machines Corporation | Magnetic tunnel junction device with optimized ferromagnetic layer |
| KR19990087860A (ko) * | 1998-05-13 | 1999-12-27 | 이데이 노부유끼 | 자성물질을이용한소자및그어드레싱방법 |
| US6055179A (en) * | 1998-05-19 | 2000-04-25 | Canon Kk | Memory device utilizing giant magnetoresistance effect |
| US6175475B1 (en) * | 1998-05-27 | 2001-01-16 | International Business Machines Corporation | Fully-pinned, flux-closed spin valve |
| DE19823826A1 (de) * | 1998-05-28 | 1999-12-02 | Burkhard Hillebrands | MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher |
| US6114719A (en) | 1998-05-29 | 2000-09-05 | International Business Machines Corporation | Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell |
| US6023395A (en) * | 1998-05-29 | 2000-02-08 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive sensor with in-stack biasing |
| US6005753A (en) | 1998-05-29 | 1999-12-21 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias |
| US6081446A (en) | 1998-06-03 | 2000-06-27 | Hewlett-Packard Company | Multiple bit magnetic memory cell |
| JP2000090418A (ja) | 1998-09-16 | 2000-03-31 | Toshiba Corp | 磁気抵抗効果素子および磁気記録装置 |
| JP3234814B2 (ja) * | 1998-06-30 | 2001-12-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置 |
| US6313973B1 (en) | 1998-06-30 | 2001-11-06 | Kabushiki Kaisha Toshiba | Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same |
| DE19830343C1 (de) | 1998-07-07 | 2000-04-06 | Siemens Ag | Verfahren zur Herstellung eines Schichtaufbaus umfassend ein AAF-System sowie magnetoresistive Sensorsysteme |
| EP0971424A3 (en) | 1998-07-10 | 2004-08-25 | Interuniversitair Microelektronica Centrum Vzw | Spin-valve structure and method for making spin-valve structures |
| EP1097457B1 (de) * | 1998-07-15 | 2003-04-09 | Infineon Technologies AG | Speicherzellenanordnung, bei der ein elektrischer widerstand eines speicherelements eine information darstellt und durch ein magnetfeld beeinflussbar ist, und verfahren zu deren herstellung |
| US6097625A (en) | 1998-07-16 | 2000-08-01 | International Business Machines Corporation | Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes |
| US6083764A (en) | 1998-07-20 | 2000-07-04 | Motorola, Inc. | Method of fabricating an MTJ with low areal resistance |
| US5946227A (en) | 1998-07-20 | 1999-08-31 | Motorola, Inc. | Magnetoresistive random access memory with shared word and digit lines |
| US5953248A (en) * | 1998-07-20 | 1999-09-14 | Motorola, Inc. | Low switching field magnetic tunneling junction for high density arrays |
| US6195240B1 (en) * | 1998-07-31 | 2001-02-27 | International Business Machines Corporation | Spin valve head with diffusion barrier |
| US6111781A (en) | 1998-08-03 | 2000-08-29 | Motorola, Inc. | Magnetic random access memory array divided into a plurality of memory banks |
| DE19836567C2 (de) | 1998-08-12 | 2000-12-07 | Siemens Ag | Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung |
| US5982660A (en) | 1998-08-27 | 1999-11-09 | Hewlett-Packard Company | Magnetic memory cell with off-axis reference layer orientation for improved response |
| US5940319A (en) | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
| US6072717A (en) * | 1998-09-04 | 2000-06-06 | Hewlett Packard | Stabilized magnetic memory cell |
| JP2000099923A (ja) | 1998-09-17 | 2000-04-07 | Sony Corp | 磁気トンネル素子及びその製造方法 |
| US6172903B1 (en) * | 1998-09-22 | 2001-01-09 | Canon Kabushiki Kaisha | Hybrid device, memory apparatus using such hybrid devices and information reading method |
| US6016269A (en) * | 1998-09-30 | 2000-01-18 | Motorola, Inc. | Quantum random address memory with magnetic readout and/or nano-memory elements |
| TW440835B (en) * | 1998-09-30 | 2001-06-16 | Siemens Ag | Magnetoresistive memory with raised interference security |
| US6330136B1 (en) | 1998-10-14 | 2001-12-11 | Read-Rite Corporation | Magnetic read sensor with SDT tri-layer and method for making same |
| JP2000132961A (ja) | 1998-10-23 | 2000-05-12 | Canon Inc | 磁気薄膜メモリ、磁気薄膜メモリの読出し方法、及び磁気薄膜メモリの書込み方法 |
| US6178074B1 (en) * | 1998-11-19 | 2001-01-23 | International Business Machines Corporation | Double tunnel junction with magnetoresistance enhancement layer |
| US6055178A (en) * | 1998-12-18 | 2000-04-25 | Motorola, Inc. | Magnetic random access memory with a reference memory array |
| US6175515B1 (en) * | 1998-12-31 | 2001-01-16 | Honeywell International Inc. | Vertically integrated magnetic memory |
| EP1141960B1 (de) | 1999-01-13 | 2002-07-03 | Infineon Technologies AG | Schreib-/lesearchitektur für mram |
| US6469878B1 (en) | 1999-02-11 | 2002-10-22 | Seagate Technology Llc | Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation |
| US6567246B1 (en) * | 1999-03-02 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element |
| US6391483B1 (en) | 1999-03-30 | 2002-05-21 | Carnegie Mellon University | Magnetic device and method of forming same |
| JP3587439B2 (ja) | 1999-03-31 | 2004-11-10 | 株式会社東芝 | 磁性体トンネル接合素子 |
| US6191972B1 (en) * | 1999-04-30 | 2001-02-20 | Nec Corporation | Magnetic random access memory circuit |
| US6295225B1 (en) | 1999-05-14 | 2001-09-25 | U.S. Philips Corporation | Magnetic tunnel junction device having an intermediate layer |
| US6165803A (en) | 1999-05-17 | 2000-12-26 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
| US6330137B1 (en) | 1999-06-11 | 2001-12-11 | Read-Rite Corporation | Magnetoresistive read sensor including a carbon barrier layer and method for making same |
| US6436526B1 (en) * | 1999-06-17 | 2002-08-20 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell |
| JP2001007420A (ja) | 1999-06-17 | 2001-01-12 | Sony Corp | 磁気抵抗効果膜とこれを用いた磁気読取りセンサ |
| JP3592140B2 (ja) * | 1999-07-02 | 2004-11-24 | Ｔｄｋ株式会社 | トンネル磁気抵抗効果型ヘッド |
| US6343032B1 (en) * | 1999-07-07 | 2002-01-29 | Iowa State University Research Foundation, Inc. | Non-volatile spin dependent tunnel junction circuit |
| US6292389B1 (en) | 1999-07-19 | 2001-09-18 | Motorola, Inc. | Magnetic element with improved field response and fabricating method thereof |
| US6275363B1 (en) | 1999-07-23 | 2001-08-14 | International Business Machines Corporation | Read head with dual tunnel junction sensor |
| US6383574B1 (en) * | 1999-07-23 | 2002-05-07 | Headway Technologies, Inc. | Ion implantation method for fabricating magnetoresistive (MR) sensor element |
| US6097626A (en) | 1999-07-28 | 2000-08-01 | Hewlett-Packard Company | MRAM device using magnetic field bias to suppress inadvertent switching of half-selected memory cells |
| US6134139A (en) | 1999-07-28 | 2000-10-17 | Hewlett-Packard | Magnetic memory structure with improved half-select margin |
| US6163477A (en) | 1999-08-06 | 2000-12-19 | Hewlett Packard Company | MRAM device using magnetic field bias to improve reproducibility of memory cell switching |
| JP2001068760A (ja) | 1999-08-31 | 2001-03-16 | Hitachi Ltd | 強磁性トンネル接合素子 |
| US6259586B1 (en) | 1999-09-02 | 2001-07-10 | International Business Machines Corporation | Magnetic tunnel junction sensor with AP-coupled free layer |
| US6166948A (en) | 1999-09-03 | 2000-12-26 | International Business Machines Corporation | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers |
| JP2001084756A (ja) | 1999-09-17 | 2001-03-30 | Sony Corp | 磁化駆動方法、磁気機能素子および磁気装置 |
| US6052302A (en) * | 1999-09-27 | 2000-04-18 | Motorola, Inc. | Bit-wise conditional write method and system for an MRAM |
| US6292336B1 (en) | 1999-09-30 | 2001-09-18 | Headway Technologies, Inc. | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient |
| US6609174B1 (en) | 1999-10-19 | 2003-08-19 | Motorola, Inc. | Embedded MRAMs including dual read ports |
| US6205052B1 (en) | 1999-10-21 | 2001-03-20 | Motorola, Inc. | Magnetic element with improved field response and fabricating method thereof |
| US6169689B1 (en) * | 1999-12-08 | 2001-01-02 | Motorola, Inc. | MTJ stacked cell memory sensing method and apparatus |
| US6285581B1 (en) | 1999-12-13 | 2001-09-04 | Motorola, Inc. | MRAM having semiconductor device integrated therein |
| DE60026104T2 (de) | 1999-12-13 | 2006-09-28 | Konica Corp. | Elektrophotographischer Photorezeptor und elektrophotographisches Bildherstellungsverfahren, elektrophotographisches Bilderzeugungsverfahren und Arbeitseinheit |
| US6473336B2 (en) | 1999-12-16 | 2002-10-29 | Kabushiki Kaisha Toshiba | Magnetic memory device |
| US6233172B1 (en) | 1999-12-17 | 2001-05-15 | Motorola, Inc. | Magnetic element with dual magnetic states and fabrication method thereof |
| JP2001184870A (ja) * | 1999-12-27 | 2001-07-06 | Mitsubishi Electric Corp | 連想メモリ装置およびそれを用いた可変長符号復号装置 |
| US6322640B1 (en) | 2000-01-24 | 2001-11-27 | Headway Technologies, Inc. | Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element |
| US6185143B1 (en) | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
| US6317299B1 (en) | 2000-02-17 | 2001-11-13 | International Business Machines Corporation | Seed layer for improving pinning field spin valve sensor |
| TW495745B (en) | 2000-03-09 | 2002-07-21 | Koninkl Philips Electronics Nv | Magnetic field element having a biasing magnetic layer structure |
| US6911710B2 (en) * | 2000-03-09 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Multi-bit magnetic memory cells |
| US6211090B1 (en) * | 2000-03-21 | 2001-04-03 | Motorola, Inc. | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
| US6281538B1 (en) | 2000-03-22 | 2001-08-28 | Motorola, Inc. | Multi-layer tunneling device with a graded stoichiometry insulating layer |
| DE10113853B4 (de) * | 2000-03-23 | 2009-08-06 | Sharp K.K. | Magnetspeicherelement und Magnetspeicher |
| US6205073B1 (en) * | 2000-03-31 | 2001-03-20 | Motorola, Inc. | Current conveyor and method for readout of MTJ memories |
| US6331944B1 (en) | 2000-04-13 | 2001-12-18 | International Business Machines Corporation | Magnetic random access memory using a series tunnel element select mechanism |
| US6269018B1 (en) | 2000-04-13 | 2001-07-31 | International Business Machines Corporation | Magnetic random access memory using current through MTJ write mechanism |
| DE10020128A1 (de) | 2000-04-14 | 2001-10-18 | Infineon Technologies Ag | MRAM-Speicher |
| JP3800925B2 (ja) * | 2000-05-15 | 2006-07-26 | 日本電気株式会社 | 磁気ランダムアクセスメモリ回路 |
| US6317376B1 (en) | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
| US6269040B1 (en) | 2000-06-26 | 2001-07-31 | International Business Machines Corporation | Interconnection network for connecting memory cells to sense amplifiers |
| DE10032271C2 (de) | 2000-07-03 | 2002-08-01 | Infineon Technologies Ag | MRAM-Anordnung |
| DE10036140C1 (de) * | 2000-07-25 | 2001-12-20 | Infineon Technologies Ag | Verfahren und Anordnung zum zerstörungsfreien Auslesen von Speicherzellen eines MRAM-Speichers |
| JP4309075B2 (ja) * | 2000-07-27 | 2009-08-05 | 株式会社東芝 | 磁気記憶装置 |
| JP2002050011A (ja) | 2000-08-03 | 2002-02-15 | Nec Corp | 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム |
| US6493259B1 (en) | 2000-08-14 | 2002-12-10 | Micron Technology, Inc. | Pulse write techniques for magneto-resistive memories |
| US6392922B1 (en) * | 2000-08-14 | 2002-05-21 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
| US6363007B1 (en) * | 2000-08-14 | 2002-03-26 | Micron Technology, Inc. | Magneto-resistive memory with shared wordline and sense line |
| US6538921B2 (en) * | 2000-08-17 | 2003-03-25 | Nve Corporation | Circuit selection of magnetic memory cells and related cell structures |
| JP3075807U (ja) * | 2000-08-23 | 2001-03-06 | 船井電機株式会社 | 磁気テープ装置 |
| DE10041378C1 (de) * | 2000-08-23 | 2002-05-16 | Infineon Technologies Ag | MRAM-Anordnung |
| US6331943B1 (en) | 2000-08-28 | 2001-12-18 | Motorola, Inc. | MTJ MRAM series-parallel architecture |
| DE10043440C2 (de) * | 2000-09-04 | 2002-08-29 | Infineon Technologies Ag | Magnetoresistiver Speicher und Verfahren zu seinem Auslesen |
| JP4693292B2 (ja) * | 2000-09-11 | 2011-06-01 | 株式会社東芝 | 強磁性トンネル接合素子およびその製造方法 |
| JP2002176150A (ja) | 2000-09-27 | 2002-06-21 | Canon Inc | 磁気抵抗効果を用いた不揮発固体メモリ素子およびメモリとその記録再生方法 |
| US6314020B1 (en) | 2000-09-29 | 2001-11-06 | Motorola, Inc. | Analog functional module using magnetoresistive memory technology |
| US6272040B1 (en) | 2000-09-29 | 2001-08-07 | Motorola, Inc. | System and method for programming a magnetoresistive memory device |
| JP4726290B2 (ja) * | 2000-10-17 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| JP2002141481A (ja) | 2000-11-01 | 2002-05-17 | Canon Inc | 強磁性体メモリおよびその動作方法 |
| US6538919B1 (en) * | 2000-11-08 | 2003-03-25 | International Business Machines Corporation | Magnetic tunnel junctions using ferrimagnetic materials |
| US6555858B1 (en) | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
| US6625057B2 (en) | 2000-11-17 | 2003-09-23 | Kabushiki Kaisha Toshiba | Magnetoresistive memory device |
| US6429497B1 (en) | 2000-11-18 | 2002-08-06 | Hewlett-Packard Company | Method for improving breakdown voltage in magnetic tunnel junctions |
| JP2002170374A (ja) | 2000-11-28 | 2002-06-14 | Canon Inc | 強磁性体不揮発性記憶素子およびその情報再生方法ならびにそれを用いたメモリチップおよび携帯型情報処理装置 |
| DE10062570C1 (de) | 2000-12-15 | 2002-06-13 | Infineon Technologies Ag | Schaltungsanordnung zur Steuerung von Schreib- und Lesevorgängen in einer magnetoresistiven Speicheranordnung (MRAM) |
| JP3920565B2 (ja) | 2000-12-26 | 2007-05-30 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| US6351409B1 (en) * | 2001-01-04 | 2002-02-26 | Motorola, Inc. | MRAM write apparatus and method |
| US6426907B1 (en) | 2001-01-24 | 2002-07-30 | Infineon Technologies North America Corp. | Reference for MRAM cell |
| US6594176B2 (en) | 2001-01-24 | 2003-07-15 | Infineon Technologies Ag | Current source and drain arrangement for magnetoresistive memories (MRAMs) |
| US6418046B1 (en) | 2001-01-30 | 2002-07-09 | Motorola, Inc. | MRAM architecture and system |
| US6385109B1 (en) * | 2001-01-30 | 2002-05-07 | Motorola, Inc. | Reference voltage generator for MRAM and method |
| US6515895B2 (en) * | 2001-01-31 | 2003-02-04 | Motorola, Inc. | Non-volatile magnetic register |
| US6358756B1 (en) * | 2001-02-07 | 2002-03-19 | Micron Technology, Inc. | Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme |
| US6392923B1 (en) * | 2001-02-27 | 2002-05-21 | Motorola, Inc. | Magnetoresistive midpoint generator and method |
| US6475812B2 (en) | 2001-03-09 | 2002-11-05 | Hewlett Packard Company | Method for fabricating cladding layer in top conductor |
| JP3576111B2 (ja) | 2001-03-12 | 2004-10-13 | 株式会社東芝 | 磁気抵抗効果素子 |
| US6404674B1 (en) | 2001-04-02 | 2002-06-11 | Hewlett Packard Company Intellectual Property Administrator | Cladded read-write conductor for a pinned-on-the-fly soft reference layer |
| US6392924B1 (en) * | 2001-04-06 | 2002-05-21 | United Microelectronics Corp. | Array for forming magnetoresistive random access memory with pseudo spin valve |
| JP2002334585A (ja) | 2001-05-02 | 2002-11-22 | Sony Corp | 半導体記憶装置 |
| US6445612B1 (en) | 2001-08-27 | 2002-09-03 | Motorola, Inc. | MRAM with midpoint generator reference and method for readout |
| US6430084B1 (en) | 2001-08-27 | 2002-08-06 | Motorola, Inc. | Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer |
| JP2005501404A (ja) * | 2001-08-30 | 2005-01-13 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 磁気抵抗装置および電子装置 |
| US6576969B2 (en) | 2001-09-25 | 2003-06-10 | Hewlett-Packard Development Company, L.P. | Magneto-resistive device having soft reference layer |
| US6531723B1 (en) * | 2001-10-16 | 2003-03-11 | Motorola, Inc. | Magnetoresistance random access memory for improved scalability |
| US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
| US6720597B2 (en) * | 2001-11-13 | 2004-04-13 | Motorola, Inc. | Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers |
| US6501144B1 (en) | 2001-11-13 | 2002-12-31 | Motorola, Inc. | Conductive line with multiple turns for programming a MRAM device |
| US6633498B1 (en) | 2002-06-18 | 2003-10-14 | Motorola, Inc. | Magnetoresistive random access memory with reduced switching field |
-
2001
- 2001-10-16 US US09/978,859 patent/US6545906B1/en not_active Expired - Lifetime
-
2002
- 2002-09-24 CN CN028227050A patent/CN1610949B/zh not_active Expired - Lifetime
- 2002-09-24 JP JP2003537077A patent/JP4292239B2/ja not_active Expired - Lifetime
- 2002-09-24 AU AU2002327059A patent/AU2002327059A1/en not_active Abandoned
- 2002-09-24 WO PCT/US2002/030437 patent/WO2003034437A2/en not_active Application Discontinuation
- 2002-09-24 EP EP02761824A patent/EP1474807A2/en not_active Withdrawn
- 2002-09-24 KR KR1020047006280A patent/KR100898875B1/ko active IP Right Grant
- 2002-10-08 TW TW091123192A patent/TW583666B/zh not_active IP Right Cessation
-
2003
- 2003-01-09 US US10/339,378 patent/US7184300B2/en not_active Expired - Lifetime
-
2005
- 2005-08-25 HK HK05107472.7A patent/HK1075321A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN1610949B (zh) | 2010-06-09 |
| JP2005505889A (ja) | 2005-02-24 |
| KR100898875B1 (ko) | 2009-05-25 |
| KR20040058244A (ko) | 2004-07-03 |
| JP4292239B2 (ja) | 2009-07-08 |
| CN1610949A (zh) | 2005-04-27 |
| US20030128603A1 (en) | 2003-07-10 |
| AU2002327059A1 (en) | 2003-04-28 |
| US7184300B2 (en) | 2007-02-27 |
| EP1474807A2 (en) | 2004-11-10 |
| TW583666B (en) | 2004-04-11 |
| US6545906B1 (en) | 2003-04-08 |
| WO2003034437A2 (en) | 2003-04-24 |
| WO2003034437A3 (en) | 2003-08-07 |
| US20030072174A1 (en) | 2003-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| HK1075321A1 (en) | A method of switching a magnetoresistive memory device and magnetoresistive array | |
| AU2003296063A1 (en) | Magnetic switching device and magnetic memory | |
| AU2003294352A8 (en) | Magnetic memory element and memory device including same | |
| IL150407A0 (en) | Non-volatile semiconductor memory device and a method of producing the same | |
| IL150401A0 (en) | Non-volatile semiconductor memory device and method for producing same | |
| AU2002225758A1 (en) | Semiconductor device having a ball grid array and method therefor | |
| HK1041098A1 (zh) | 多位磁存儲元件 | |
| HK1048884A1 (en) | Thermally-assisted switching in magnetic memory devices | |
| HK1048016A1 (zh) | 存儲器件的製造和裝配結構及方法 | |
| EP1329896A4 (en) | SEMICONDUCTOR MEMORY AND CONTROL METHOD | |
| EP1526588A4 (en) | MAGNETIC RESOURCE EFFECT ELEMENT AND MAGNETIC STORAGE UNIT | |
| AU2002232848A1 (en) | Non-volatile magnetic memory device | |
| AU2001287985A1 (en) | Magnetic element, memory device and write head | |
| GB2374705B (en) | Semiconductor memory device and manufacturing method thereof | |
| HK1054275A1 (en) | A memory device | |
| EP1343171A4 (en) | MEMORY MATRIX | |
| AU2003265087A8 (en) | Programmable magnetic memory device fp-mram | |
| GB2368725B (en) | Semiconductor memory device and fabrication | |
| GB2380277B (en) | A solid state memory device and a method of document reproduction | |
| EP1612865A4 (en) | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE | |
| GB2383455B (en) | Non-volatile memory and method for operating a non-volatile memory | |
| EP1489660A4 (en) | MAGNETIC MEMORY DEVICE AND METHOD FOR PRODUCING THE SAME | |
| GB2362990B (en) | Memory device | |
| GB2376781B (en) | Memory device | |
| EP1441392A4 (en) | MAGNETIC MEMORY DEVICE |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20140924 |