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SE9900439D0 - Electrostatic discharge protection of integrated circuits - Google Patents

Electrostatic discharge protection of integrated circuits

Info

Publication number
SE9900439D0
SE9900439D0 SE9900439A SE9900439A SE9900439D0 SE 9900439 D0 SE9900439 D0 SE 9900439D0 SE 9900439 A SE9900439 A SE 9900439A SE 9900439 A SE9900439 A SE 9900439A SE 9900439 D0 SE9900439 D0 SE 9900439D0
Authority
SE
Sweden
Prior art keywords
well
doped region
pad
resistor
another
Prior art date
Application number
SE9900439A
Other languages
English (en)
Inventor
Ola Pettersson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9900439A priority Critical patent/SE9900439D0/sv
Publication of SE9900439D0 publication Critical patent/SE9900439D0/sv
Priority to TW088108378A priority patent/TW413922B/zh
Priority to US09/499,360 priority patent/US6388851B1/en
Priority to AT00906848T priority patent/ATE377844T1/de
Priority to JP2000599082A priority patent/JP5023254B2/ja
Priority to EP00906848A priority patent/EP1190450B1/en
Priority to PCT/SE2000/000257 priority patent/WO2000048252A2/en
Priority to DE60037019T priority patent/DE60037019T2/de
Priority to CA002362428A priority patent/CA2362428A1/en
Priority to KR1020017010073A priority patent/KR100829664B1/ko
Priority to CNB008060576A priority patent/CN1201394C/zh
Priority to AU28403/00A priority patent/AU2840300A/en
Priority to HK02107592.5A priority patent/HK1046061A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SE9900439A 1999-02-09 1999-02-09 Electrostatic discharge protection of integrated circuits SE9900439D0 (sv)

Priority Applications (13)

Application Number Priority Date Filing Date Title
SE9900439A SE9900439D0 (sv) 1999-02-09 1999-02-09 Electrostatic discharge protection of integrated circuits
TW088108378A TW413922B (en) 1999-02-09 1999-05-21 Electrostatic discharge protection of integrated circuits
US09/499,360 US6388851B1 (en) 1999-02-09 2000-02-08 Electronic discharge protection of integrated circuits
AU28403/00A AU2840300A (en) 1999-02-09 2000-02-09 Electrostatic discharge protection of integrated circuits
JP2000599082A JP5023254B2 (ja) 1999-02-09 2000-02-09 集積回路の静電荷放電保護
AT00906848T ATE377844T1 (de) 1999-02-09 2000-02-09 Schutz gegen elektrostatische entladung für integrierte schaltungen
EP00906848A EP1190450B1 (en) 1999-02-09 2000-02-09 Electrostatic discharge protection of integrated circuits
PCT/SE2000/000257 WO2000048252A2 (en) 1999-02-09 2000-02-09 Electrostatic discharge protection of integrated circuits
DE60037019T DE60037019T2 (de) 1999-02-09 2000-02-09 Schutz gegen elektrostatische entladung für integrierte schaltungen
CA002362428A CA2362428A1 (en) 1999-02-09 2000-02-09 Electrostatic discharge protection of integrated circuits
KR1020017010073A KR100829664B1 (ko) 1999-02-09 2000-02-09 집적 회로의 정전기 방전 보호
CNB008060576A CN1201394C (zh) 1999-02-09 2000-02-09 集成电路的静电放电保护
HK02107592.5A HK1046061A1 (zh) 1999-02-09 2002-10-18 集成電路的靜電放電保護

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9900439A SE9900439D0 (sv) 1999-02-09 1999-02-09 Electrostatic discharge protection of integrated circuits

Publications (1)

Publication Number Publication Date
SE9900439D0 true SE9900439D0 (sv) 1999-02-09

Family

ID=20414413

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9900439A SE9900439D0 (sv) 1999-02-09 1999-02-09 Electrostatic discharge protection of integrated circuits

Country Status (13)

Country Link
US (1) US6388851B1 (sv)
EP (1) EP1190450B1 (sv)
JP (1) JP5023254B2 (sv)
KR (1) KR100829664B1 (sv)
CN (1) CN1201394C (sv)
AT (1) ATE377844T1 (sv)
AU (1) AU2840300A (sv)
CA (1) CA2362428A1 (sv)
DE (1) DE60037019T2 (sv)
HK (1) HK1046061A1 (sv)
SE (1) SE9900439D0 (sv)
TW (1) TW413922B (sv)
WO (1) WO2000048252A2 (sv)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979908B1 (en) * 2000-01-11 2005-12-27 Texas Instruments Incorporated Input/output architecture for integrated circuits with efficient positioning of integrated circuit elements
CN100401512C (zh) * 2002-03-26 2008-07-09 华邦电子股份有限公司 利用硅控整流器的静电放电保护电路
FR2848026B1 (fr) * 2002-11-28 2005-03-11 St Microelectronics Sa Dispositif de protection d'un circuit electronique contre des decharges electrostatiques
US8280098B2 (en) * 2005-05-19 2012-10-02 Uti Limited Partnership Digital watermarking CMOS sensor
KR100834828B1 (ko) * 2006-03-17 2008-06-04 삼성전자주식회사 정전방전 특성을 강화한 반도체 장치
US8816486B2 (en) * 2008-05-12 2014-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Pad structure for 3D integrated circuit
JP6590844B2 (ja) * 2017-02-13 2019-10-16 株式会社豊田中央研究所 半導体装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928370A (ja) 1982-08-09 1984-02-15 Toshiba Corp 半導体装置
JPS6144454A (ja) 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
US4806999A (en) 1985-09-30 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Area efficient input protection
GB8621839D0 (en) 1986-09-10 1986-10-15 British Aerospace Electrostatic discharge protection circuit
JPS63151062A (ja) * 1986-12-16 1988-06-23 Toshiba Corp 入力保護回路
US5196913A (en) 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
DE68916192T2 (de) 1988-11-22 1994-09-22 At & T Corp Ausgangspuffer einer integrierten Schaltung mit einem verbesserten ESD-Schutz.
JPH02186673A (ja) * 1989-01-13 1990-07-20 Nec Corp 半導体装置
US5304839A (en) 1990-12-04 1994-04-19 At&T Bell Laboratories Bipolar ESD protection for integrated circuits
US5272371A (en) * 1991-11-19 1993-12-21 Sgs-Thomson Microelectronics, Inc. Electrostatic discharge protection structure
JPH05226564A (ja) 1992-02-14 1993-09-03 Rohm Co Ltd 半導体装置
FR2693032B1 (fr) 1992-06-25 1994-09-30 Sgs Thomson Microelectronics Structure de diodes de protection de plot.
JPH06188369A (ja) * 1992-12-21 1994-07-08 Nippon Motorola Ltd 静電気破壊防止層を有する半導体回路
KR960016483B1 (ko) * 1993-08-27 1996-12-12 삼성전자 주식회사 정전기 보호장치를 구비하는 반도체 집적회로 및 그 제조방법
JPH0818007A (ja) 1994-06-27 1996-01-19 Matsushita Electric Ind Co Ltd 半導体装置
US5514892A (en) 1994-09-30 1996-05-07 Motorola, Inc. Electrostatic discharge protection device
US5615073A (en) 1995-06-22 1997-03-25 National Semiconductor Corporation Electrostatic discharge protection apparatus
DE19539079A1 (de) 1995-10-20 1997-04-24 Telefunken Microelectron Schaltungsanordnung
KR100200303B1 (ko) * 1995-12-29 1999-06-15 김영환 반도체 장치용 정전기 방지회로 및 그 제조방법
EP0822596A3 (en) 1996-08-02 2000-01-05 Texas Instruments Inc. Improvements in or relating to integrated circuits
US5808343A (en) 1996-09-20 1998-09-15 Integrated Device Technology, Inc. Input structure for digital integrated circuits
US5821572A (en) 1996-12-17 1998-10-13 Symbios, Inc. Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection
KR100208685B1 (ko) * 1996-12-30 1999-07-15 전주범 정전기 보호용 다이오드 및 이의 제조 방법

Also Published As

Publication number Publication date
CN1346514A (zh) 2002-04-24
KR100829664B1 (ko) 2008-05-16
US6388851B1 (en) 2002-05-14
TW413922B (en) 2000-12-01
AU2840300A (en) 2000-08-29
JP5023254B2 (ja) 2012-09-12
EP1190450B1 (en) 2007-11-07
KR20010102013A (ko) 2001-11-15
WO2000048252A2 (en) 2000-08-17
HK1046061A1 (zh) 2002-12-20
JP2002536848A (ja) 2002-10-29
CA2362428A1 (en) 2000-08-17
DE60037019D1 (de) 2007-12-20
DE60037019T2 (de) 2008-08-14
ATE377844T1 (de) 2007-11-15
WO2000048252A3 (en) 2001-05-31
CN1201394C (zh) 2005-05-11
EP1190450A2 (en) 2002-03-27

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