JPS56158481A - Device for protecting semiconductor device - Google Patents
Device for protecting semiconductor deviceInfo
- Publication number
- JPS56158481A JPS56158481A JP6205880A JP6205880A JPS56158481A JP S56158481 A JPS56158481 A JP S56158481A JP 6205880 A JP6205880 A JP 6205880A JP 6205880 A JP6205880 A JP 6205880A JP S56158481 A JPS56158481 A JP S56158481A
- Authority
- JP
- Japan
- Prior art keywords
- diffused
- layer
- substrate
- layers
- diffused layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To prevent the breakdown of a circuit element by providing second conductive type first and second diffused layers on a first conductive type substrate, and connecting the second diffused layer to the ground or a power source, and causing punch through between the diffused layers. CONSTITUTION:On the N type Si substrate 10 on which an MOSFET11 is formed, are provided P type diffused layers 31 and 32 which are extended in parallel in close proximity, and a protecting element 30 is obtained. Both ends of the diffused layer 31 of the protecting element 30 are connected to a pad 20 and a gate electrode 17 of the FET11, respectively, and the protective function as a diode is provided. At least a part of the diffused layer 32 exists in a depletion layer 40 of the diffused layer 31. The layer 32 is connected to the ground (or to one terminal of the power source) via an electrode 38. When an excessive voltage is applied, the punch through is generated between the diffused layers, and the breakdown voltage of the junction between the diffused layer 31 and the substrate 10 is decreased. The degree of the decrease is controlled by changing the distance l between the diffused layers, and the circuit element can be effectively protected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6205880A JPS56158481A (en) | 1980-05-10 | 1980-05-10 | Device for protecting semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6205880A JPS56158481A (en) | 1980-05-10 | 1980-05-10 | Device for protecting semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56158481A true JPS56158481A (en) | 1981-12-07 |
Family
ID=13189148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6205880A Pending JPS56158481A (en) | 1980-05-10 | 1980-05-10 | Device for protecting semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56158481A (en) |
-
1980
- 1980-05-10 JP JP6205880A patent/JPS56158481A/en active Pending
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