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JPS54146975A - Protection circuit of semiconductor device - Google Patents

Protection circuit of semiconductor device

Info

Publication number
JPS54146975A
JPS54146975A JP5577378A JP5577378A JPS54146975A JP S54146975 A JPS54146975 A JP S54146975A JP 5577378 A JP5577378 A JP 5577378A JP 5577378 A JP5577378 A JP 5577378A JP S54146975 A JPS54146975 A JP S54146975A
Authority
JP
Japan
Prior art keywords
type
gate
drain
external terminal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5577378A
Other languages
Japanese (ja)
Inventor
Kimiyoshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5577378A priority Critical patent/JPS54146975A/en
Publication of JPS54146975A publication Critical patent/JPS54146975A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the destruction of a gate film and the lowering of a switching speed by inserting a depletion-type MOSFET between the external terminal and a protected MOSFET. CONSTITUTION:N-type source drain 2 and electrode 5 are provided on P<->-type substrate 1 and gate insulating film 4 respectively to form a FET, and protection devices Q0 and Q0' are completed by providing N channel 8 between N-type drain 6 and source 7 and providing gate electrode 10 through insulating film 9, and p layer 12 is formed and is used as a resistance as well as a diode after forming N layer 11 for protecting film 9. The surface is covered with insulating gilm 13, and electrodes are formed selectively. In this constitution, each external terminal is connected to the drain of depletion-type FET even if external terminals provided in the case are independent respectively, and an on-state is held normally across the drain and the source unless a proper negative voltage is applied to the protection gate terminal. As a result, even if the external terminal is charged with a high voltage, the external terminal is short-circuited to the substrate immediately to prevent the destruction of the gate film.
JP5577378A 1978-05-10 1978-05-10 Protection circuit of semiconductor device Pending JPS54146975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5577378A JPS54146975A (en) 1978-05-10 1978-05-10 Protection circuit of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5577378A JPS54146975A (en) 1978-05-10 1978-05-10 Protection circuit of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54146975A true JPS54146975A (en) 1979-11-16

Family

ID=13008185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5577378A Pending JPS54146975A (en) 1978-05-10 1978-05-10 Protection circuit of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54146975A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042305A2 (en) * 1980-06-18 1981-12-23 Kabushiki Kaisha Toshiba MOS transistor circuit with breakdown protection
FR2485808A1 (en) * 1980-06-30 1981-12-31 Mitsubishi Electric Corp INPUT PROTECTION CIRCUIT FOR SEMICONDUCTOR DEVICE
JPS5768071A (en) * 1980-10-14 1982-04-26 Nec Corp Semiconductor device with protective element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109682A (en) * 1974-02-04 1975-08-28
JPS5117655A (en) * 1974-08-05 1976-02-12 Hitachi Ltd

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109682A (en) * 1974-02-04 1975-08-28
JPS5117655A (en) * 1974-08-05 1976-02-12 Hitachi Ltd

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042305A2 (en) * 1980-06-18 1981-12-23 Kabushiki Kaisha Toshiba MOS transistor circuit with breakdown protection
FR2485808A1 (en) * 1980-06-30 1981-12-31 Mitsubishi Electric Corp INPUT PROTECTION CIRCUIT FOR SEMICONDUCTOR DEVICE
JPS5768071A (en) * 1980-10-14 1982-04-26 Nec Corp Semiconductor device with protective element

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