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JPS56133871A - Mos field effect semiconductor device with high breakdown voltage - Google Patents

Mos field effect semiconductor device with high breakdown voltage

Info

Publication number
JPS56133871A
JPS56133871A JP3770380A JP3770380A JPS56133871A JP S56133871 A JPS56133871 A JP S56133871A JP 3770380 A JP3770380 A JP 3770380A JP 3770380 A JP3770380 A JP 3770380A JP S56133871 A JPS56133871 A JP S56133871A
Authority
JP
Japan
Prior art keywords
breakdown voltage
high breakdown
resistance layer
low
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3770380A
Other languages
Japanese (ja)
Other versions
JPS622706B2 (en
Inventor
Tsutomu Ashida
Kiyotoshi Nakagawa
Katsumasa Fujii
Yasuo Torimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3770380A priority Critical patent/JPS56133871A/en
Publication of JPS56133871A publication Critical patent/JPS56133871A/en
Publication of JPS622706B2 publication Critical patent/JPS622706B2/ja
Priority to US07/277,440 priority patent/US4947232A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the reliability of an MOSFET with high breakdown voltage by a method wherein the substrate surface of an MOSFET with high breakdown voltage is covered with a low-resistance layer having a fixed potential through an insulating layer so that said MOSFET is independently of the external charge. CONSTITUTION:In a semiconductor substrate 1 in which impurity has been diffused, a conductor or low-resistance layer 13 is formed so as to cover the region of a pinch resistance layer 5 through an insulating film 11. The conductor or low-resistance layer 13 is electrically connected to a source-side field plate 8' and a drain- side electrode 9 through high-resistance bodies 15 and 16 respectively in order to fix the potential of the conductor or low-resistance layer 13 in operation at an intermediate potential between the source and drain.
JP3770380A 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage Granted JPS56133871A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3770380A JPS56133871A (en) 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage
US07/277,440 US4947232A (en) 1980-03-22 1988-11-28 High voltage MOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3770380A JPS56133871A (en) 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage

Publications (2)

Publication Number Publication Date
JPS56133871A true JPS56133871A (en) 1981-10-20
JPS622706B2 JPS622706B2 (en) 1987-01-21

Family

ID=12504881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3770380A Granted JPS56133871A (en) 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage

Country Status (1)

Country Link
JP (1) JPS56133871A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0160183A2 (en) * 1984-05-03 1985-11-06 Rockwell International Corporation High voltage mos field effect transistor
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
JP2012018972A (en) * 2010-07-06 2012-01-26 Sanken Electric Co Ltd Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6452933A (en) * 1987-08-25 1989-03-01 Yoshio Saito Method of construction utilizing thinning wood

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0160183A2 (en) * 1984-05-03 1985-11-06 Rockwell International Corporation High voltage mos field effect transistor
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
JP2012018972A (en) * 2010-07-06 2012-01-26 Sanken Electric Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS622706B2 (en) 1987-01-21

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