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KR940008075A - 공급 전압범위를 넘는 입력 요구 동작용 정전방전(esd)보호 - Google Patents

공급 전압범위를 넘는 입력 요구 동작용 정전방전(esd)보호 Download PDF

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Publication number
KR940008075A
KR940008075A KR1019930018212A KR930018212A KR940008075A KR 940008075 A KR940008075 A KR 940008075A KR 1019930018212 A KR1019930018212 A KR 1019930018212A KR 930018212 A KR930018212 A KR 930018212A KR 940008075 A KR940008075 A KR 940008075A
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KR
South Korea
Prior art keywords
bipolar transistor
base
collector
electrostatic discharge
esd
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KR1019930018212A
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English (en)
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KR100272496B1 (ko
Inventor
하이 호앙 튜옹
이자디니아 만소우어
Original Assignee
존 엠. 클락 3세
내쇼날 세미컨덕터 코포레이션
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Application filed by 존 엠. 클락 3세, 내쇼날 세미컨덕터 코포레이션 filed Critical 존 엠. 클락 3세
Publication of KR940008075A publication Critical patent/KR940008075A/ko
Application granted granted Critical
Publication of KR100272496B1 publication Critical patent/KR100272496B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

정전방전으로 부터의 집적회로 특징부를 보호하는데 사용할 수 있는 회로가 개시되어 있다. 제1바이폴라 트랜지스터는 IC 특징부에 접속된 에미터 및 접지에 접속된 콜렉터를 지닌다. 제2바이폴라 트랜지스터는 IC 특징부에 접속된 에미터 및 베이스에 접속되어 있으며 제1바이폴라 트랜지스터의 베이스에 접속되어 있는 콜렉터를 지니다. 전계 효과 트랜지스터는 IC 특징부에 접속된 게이트 및 드레인을 지니며 소오스에 접속되어 있고 제1바이폴라 트랜지스터의 베이스 및 제2바이폴라 트랜지스터의 콜렉터 및 베이스에 접속되어 있는 본체를 지닌다. 다이오드는 전계 효과 트랜지스터의 본체 및 소오스에 접속되어 있으며 제1바이폴라 트랜지스터의 베이스 및 제2바이폴라 트랜지스터의 콜렉터 및 베이스에 접속되어 있는 캐소드를 지닌다.

Description

공급 전압범위를 넘는 입력 요구 동작용 정전방전(ESD)보호
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따라 제조된 반도체 디바이스로서 제4도의 단면 3-3을 따라 취해진 반도체 디바이스에 대한 측단면도.
제4도는 제3도의 단면 4-4를 따라 취해진 반도체 디바이스에 대한 평면도.
제5도는 제3도의 반도체 디바이스에 대한 개략적인 회로도.

Claims (1)

  1. 전력 스파이크로 인한 손상으로부터 집적회로 특징부를 보호하는데 사용할 수 있는 회로에 있어서, IC 특징부에 접속된 에미터 및 접지에 접속된 콜렉터를 지니는 제1바이폴라 트랜지스터베이, IC 특징부에 접속된 에미터, 및 베이스에 접속되어 있으며 제1 바이폴라 트랜지스터의 베이스에 접속되어 있는 콜렉터를 지니는 제2바이폴라 트랜지스터, IC특징부에 접속된 게이트 및 드레인을 지니며, 소오스에 접속되어 있고 제1바이폴라 트랜지스터의 베이스 및 제2바이폴라 트랜지스터의 콜렉터 및 베이스에 접속되어 있는 본체를 지니는 전계효과 트랜지스터, 및 상기 전계효과 트랜지스터의 본체 및 소오스에 접속되어 있으며, 제1바이폴라 트랜지스터의 베이스 및 제2바이폴라 트랜지스터의 콜렉터 및 베이스에 접속되어 있는 캐소드를 지니는 다이오를 포함하는 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930018212A 1992-09-11 1993-09-10 공급 전압범위를 넘는 입력 요구 동작용 정전방전 보호 KR100272496B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92-07/943,913 1992-09-11
US07/943,913 US5291051A (en) 1992-09-11 1992-09-11 ESD protection for inputs requiring operation beyond supply voltages

Publications (2)

Publication Number Publication Date
KR940008075A true KR940008075A (ko) 1994-04-28
KR100272496B1 KR100272496B1 (ko) 2000-11-15

Family

ID=25480472

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930018212A KR100272496B1 (ko) 1992-09-11 1993-09-10 공급 전압범위를 넘는 입력 요구 동작용 정전방전 보호

Country Status (4)

Country Link
US (1) US5291051A (ko)
EP (1) EP0587212A3 (ko)
JP (1) JP3411634B2 (ko)
KR (1) KR100272496B1 (ko)

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JP2874583B2 (ja) * 1995-02-10 1999-03-24 日本電気株式会社 半導体装置の入力保護回路
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Also Published As

Publication number Publication date
EP0587212A3 (en) 1995-03-22
JPH06188417A (ja) 1994-07-08
US5291051A (en) 1994-03-01
EP0587212A2 (en) 1994-03-16
JP3411634B2 (ja) 2003-06-03
KR100272496B1 (ko) 2000-11-15

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