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KR890012398A - Mos형 반도체장치의 입력보호회로 - Google Patents

Mos형 반도체장치의 입력보호회로 Download PDF

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Publication number
KR890012398A
KR890012398A KR1019890000192A KR890000192A KR890012398A KR 890012398 A KR890012398 A KR 890012398A KR 1019890000192 A KR1019890000192 A KR 1019890000192A KR 890000192 A KR890000192 A KR 890000192A KR 890012398 A KR890012398 A KR 890012398A
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KR
South Korea
Prior art keywords
input
protection circuit
circuit according
protection
gate
Prior art date
Application number
KR1019890000192A
Other languages
English (en)
Other versions
KR910009355B1 (ko
Inventor
시게루 아츠미
도루 요시다
야스오 가와하라
후미나리 다나카
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR890012398A publication Critical patent/KR890012398A/ko
Application granted granted Critical
Publication of KR910009355B1 publication Critical patent/KR910009355B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

내용 없음.

Description

MOS형 반도체장치의 입력보호회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 제1실시예의 회로도,
제4도는 제1실시예의 회로에서 제1보호소자로 사용되는 소자의 단면도,
제5도는 제1실시예의 회로에서 제2보호소자로 사용되는 소자의 단면도.

Claims (10)

  1. 입력패드(11)와, 이 입력패드(11)의 신호가 게이트에 공급되는 입력단 MOS트랜지스터(13, 50, 56), 상기 입력패드(11)와 상기 입력단 MOS트랜지스터(13, 50, 56)게이트를 접속하는 배선 (12, 25, 41, 45, 46), 상기 입력패드(11) 근방에 설치되어 그 일단이 상기 배선에 접속된 제1보호소자(14, 16, 17, 18) 및 상기 입력단 MOS트랜지스터(13, 50, 56) 게이트 근방에 설치되어 그 일단이 상기 배선(12, 25, 41, 46)에 접속된 제2보호소자(15, 19)로 구성된 것을 특징으로 MOS형 반도체 장치의 입력보호회로.
  2. 제1항에 있어서, 상기 제2보호소자(15, 19)가 보호링영역(55)으로 둘러싸이면서 상기 입력단 MOS트랜지스터(13, 50, 56)가 형성되어 있는 회로블럭(54)내에 형성된 것을 특징으로 하는 MOS형 반도체 장치의 입력보호회로.
  3. 제1항에 있어서, 상기 제1보호소자(14, 16, 17, 18)가 1개의 바이폴러 트랜지스터(14)로 구성된 것을 특징으로 하는 MOS형 트랜지스터의 입력보호회로.
  4. 제1항에 있어서, 상기 제1보호소자(14, 16, 17, 18)가 2개의 다이오드(16, 17)로 구성된 것을 특징으로 하는 MOS형 트랜지스터의 입력보호회로.
  5. 제1항에 있어서, 상기 제1보호소자(14, 16, 17, 18)가 2개의 바이폴러 트랜지스터(14, 18)로 구성된 것을 특징으로 하는 MOS형 트랜지스터의 입력보호회로.
  6. 제1항에 있어서, 상기 제2보호소자(15,19)가 다이오드(15)인 것을 특징으로 하는 MOS형 트랜지스터의 입력보호회로.
  7. 제1항에 있어서, 상기 제2보호소자(15,19)가 소오스와 드레인이 상기 배선(12)에 공통접속된 MOS 트랜지스터(19)인 것을 특징으로 하는 MOS형 트랜지스터의 입력보호회로.
  8. 제7항에 있어서, 상기 MOS형 트랜지스터(19)의 게이트가 접지전위(Vss)에 접속된 것을 특징으로 하는 MOS형 트랜지스터의 입력보호회로.
  9. 제7항에 있어서, 상기 MOS형 트랜지스터(19)의 게이트가 전원전위(Vcc)에 접속된 것을 특징으로 하는 MOS형 트랜지스터의 입력보호회로.
  10. 제1항에 있어서, 상기 배선(12, 25, 41, 45, 46)도중에 저항(R)이 직렬로 연결되어진 것을 특징으로 하는 MOS형 트랜지스터의 입력보호회로.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890000192A 1988-01-11 1989-01-10 Mos형 반도체장치의 입력보호회로 KR910009355B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-3612 1988-01-11
JP63003612A JPH07105446B2 (ja) 1988-01-11 1988-01-11 Ｍｏｓ型半導体装置の入力保護回路

Publications (2)

Publication Number Publication Date
KR890012398A true KR890012398A (ko) 1989-08-26
KR910009355B1 KR910009355B1 (ko) 1991-11-12

Family

ID=11562315

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890000192A KR910009355B1 (ko) 1988-01-11 1989-01-10 Mos형 반도체장치의 입력보호회로

Country Status (5)

Country Link
US (1) US4924339A (ko)
EP (1) EP0324185B1 (ko)
JP (1) JPH07105446B2 (ko)
KR (1) KR910009355B1 (ko)
DE (1) DE3885263T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR100256465B1 (ko) * 1995-11-27 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 반도체 장치의 입력 보호 회로

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FR2642543B1 (fr) * 1989-01-27 1991-04-05 Gemplus Card Int Dispositif de securite pour circuit integre
JPH061802B2 (ja) * 1989-03-14 1994-01-05 株式会社東芝 半導体装置
DE3943279C2 (de) * 1989-12-29 2001-07-12 Bosch Gmbh Robert Schaltung zum Ausgleichen sehr schneller Stromschwankungen
US5049764A (en) * 1990-01-25 1991-09-17 North American Philips Corporation, Signetics Div. Active bypass for inhibiting high-frequency supply voltage variations in integrated circuits
KR960002094B1 (ko) * 1990-11-30 1996-02-10 가부시키가이샤 도시바 입력보호회로를 갖춘 반도체장치
FR2676870B1 (fr) * 1991-05-24 1994-12-23 Sgs Thomson Microelectronics Structure de protection dans un circuit cmos contre le verrouillage.
JP2953192B2 (ja) * 1991-05-29 1999-09-27 日本電気株式会社 半導体集積回路
EP0517391A1 (en) * 1991-06-05 1992-12-09 STMicroelectronics, Inc. ESD protection circuit
US5229635A (en) * 1991-08-21 1993-07-20 Vlsi Technology, Inc. ESD protection circuit and method for power-down application
DE69232257T2 (de) * 1991-09-30 2002-08-08 Texas Industries, Inc. Durch Verarmung kontrollierte Isolationsstufe
DE4135522C2 (de) * 1991-10-28 1996-11-21 Siemens Ag Schaltungsanordnung zum Schutz integrierter Schaltkreise
US5293057A (en) * 1992-08-14 1994-03-08 Micron Technology, Inc. Electrostatic discharge protection circuit for semiconductor device
JP2965840B2 (ja) * 1993-12-02 1999-10-18 株式会社東芝 トランジスタ回路
FR2715504B1 (fr) * 1994-01-25 1996-04-05 Sgs Thomson Microelectronics Circuit intégré incorporant une protection contre les décharges électrostatiques.
JPH07283405A (ja) * 1994-04-13 1995-10-27 Toshiba Corp 半導体装置の保護回路
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
JP2822915B2 (ja) * 1995-04-03 1998-11-11 日本電気株式会社 半導体装置
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JP2001308282A (ja) * 2000-04-19 2001-11-02 Nec Corp 半導体装置
DE10201056B4 (de) * 2002-01-14 2007-06-21 Infineon Technologies Ag Halbleitereinrichtung mit einem bipolaren Schutztransistor
KR20030078379A (ko) * 2002-03-29 2003-10-08 주식회사 하이닉스반도체 정전기 보호회로
US9490245B1 (en) * 2015-06-19 2016-11-08 Qualcomm Incorporated Circuit and layout for a high density antenna protection diode

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100256465B1 (ko) * 1995-11-27 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 반도체 장치의 입력 보호 회로

Also Published As

Publication number Publication date
KR910009355B1 (ko) 1991-11-12
JPH07105446B2 (ja) 1995-11-13
EP0324185A3 (en) 1990-09-26
DE3885263T2 (de) 1994-02-24
JPH01181565A (ja) 1989-07-19
DE3885263D1 (de) 1993-12-02
EP0324185A2 (en) 1989-07-19
EP0324185B1 (en) 1993-10-27
US4924339A (en) 1990-05-08

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