[go: up one dir, main page]

KR900013380A - 전압 제어회로 - Google Patents

전압 제어회로 Download PDF

Info

Publication number
KR900013380A
KR900013380A KR1019900001909A KR900001909A KR900013380A KR 900013380 A KR900013380 A KR 900013380A KR 1019900001909 A KR1019900001909 A KR 1019900001909A KR 900001909 A KR900001909 A KR 900001909A KR 900013380 A KR900013380 A KR 900013380A
Authority
KR
South Korea
Prior art keywords
voltage
channel mos
series
substrate
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019900001909A
Other languages
English (en)
Other versions
KR940001251B1 (ko
Inventor
마코토 이토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900013380A publication Critical patent/KR900013380A/ko
Application granted granted Critical
Publication of KR940001251B1 publication Critical patent/KR940001251B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)

Abstract

내용 없음

Description

전압 제어회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 전압 제어회로가 내장된 반도체집적회로의 일부를 나타낸 구성설명도,
제2도는 제1도중의 전압제어회로의 1실시예를 나타낸 회로도.

Claims (3)

  1. 반도체집적회로에 설치된 전압발생회로의 전압출력단(a)과 기준전위단(1)의 사이에 복수개의 P채널 MOS트랜지스터〔P2-P(n-1)〕가 직렬접속되고, 이 각 P채널 MOS트랜지스터〔P2-P(n-1)〕는 가각 소오스 · 기판이 서로 접속됨과 더불어 각각 게이트 · 드레인이 서로 접속되어 있는 것을 특징으로 하는 전압제어회로.
  2. 제1항에 있어서, 상기 전압발생회로의 전압출력단(a)과 상기 직렬접속된 복수개의 P채널 MOS트랜지스터〔P2-P(n-1)〕의 일단측과의 사이에 소오스 · 기판이 서로 접속됨과 더불어 그 게이트에 상기 제어대상인 전압발생회로의 활성화제어신호(EN)에 동기되어 활성화제어신호(EN)가 공급되는 1개의 P채널 MOS트랜지스터(P1)가 삽입되어 있는 것을 특징으로 하는 전압제어회로.
  3. 제1항 또는 제2항에 있어서, 상기 직렬접속된 복수개의 P채널 MOS트랜지스터〔P2-P(n-1)〕의 다른단측과 상기 전압발생회로의 기준전위단(1)의 사이에 기판 · 게이트 · 드레인이 서로 접속되어 있는 1개의 P채널 MOS트랜지스터(Pn)나 1개의 다이오드가 삽입되어 있는 것을 특징으로 하는 전압제어회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900001909A 1989-02-16 1990-02-16 전압 제어회로 Expired - Fee Related KR940001251B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1036479A JPH02215154A (ja) 1989-02-16 1989-02-16 電圧制御回路
JP01-036479 1989-02-16

Publications (2)

Publication Number Publication Date
KR900013380A true KR900013380A (ko) 1990-09-05
KR940001251B1 KR940001251B1 (ko) 1994-02-18

Family

ID=12470952

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900001909A Expired - Fee Related KR940001251B1 (ko) 1989-02-16 1990-02-16 전압 제어회로

Country Status (5)

Country Link
US (1) US5029282A (ko)
EP (1) EP0382929B1 (ko)
JP (1) JPH02215154A (ko)
KR (1) KR940001251B1 (ko)
DE (1) DE68917900T2 (ko)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0470204A (ja) * 1990-07-11 1992-03-05 Sony Corp バイアス電圧発生回路及び演算増幅器
JPH04205994A (ja) * 1990-11-30 1992-07-28 Toshiba Corp プリチャージ回路
US5126590A (en) * 1991-06-17 1992-06-30 Micron Technology, Inc. High efficiency charge pump
FR2681180B1 (fr) * 1991-09-05 1996-10-25 Gemplus Card Int Circuit de regulation de tension de programmation, pour memoires programmables.
DE4130191C2 (de) * 1991-09-30 1993-10-21 Samsung Electronics Co Ltd Konstantspannungsgenerator für eine Halbleitereinrichtung mit kaskadierter Auflade- bzw. Entladeschaltung
KR940005691B1 (ko) * 1991-10-25 1994-06-22 삼성전자 주식회사 기판전압 발생 장치의 차아지 펌프회로
CN1075690C (zh) * 1991-11-07 2001-11-28 摩托罗拉公司 混合信号处理系统及其供电方法
EP1168365A3 (en) * 1991-12-09 2004-09-29 Fujitsu Limited Negative-voltage bias circuit
US5260646A (en) * 1991-12-23 1993-11-09 Micron Technology, Inc. Low power regulator for a voltage generator circuit
US5191232A (en) * 1992-03-17 1993-03-02 Silicon Storage Technology, Inc. High frequency voltage multiplier for an electrically erasable and programmable memory device
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential
JP3420606B2 (ja) * 1993-03-15 2003-06-30 株式会社東芝 高電圧発生装置
JP3043201B2 (ja) * 1993-04-22 2000-05-22 株式会社東芝 昇圧回路
US5811990A (en) * 1993-10-15 1998-09-22 Micron Technology, Inc. Voltage pump and a level translator circuit
US5642073A (en) * 1993-12-06 1997-06-24 Micron Technology, Inc. System powered with inter-coupled charge pumps
JP3159586B2 (ja) * 1993-12-09 2001-04-23 株式会社東芝 昇圧回路装置
FR2717918B1 (fr) * 1994-03-25 1996-05-24 Suisse Electronique Microtech Circuit pour contrôler les tensions entre caisson et sources des transistors mos et système d'asservissement du rapport entre les courants dynamique et statique d'un circuit logique mos.
TW271011B (ko) * 1994-04-20 1996-02-21 Nippon Steel Corp
FR2719135B1 (fr) * 1994-04-21 1996-06-28 Sgs Thomson Microelectronics Circuit de limitation de tension avec comparateur à hystérésis.
US6140861A (en) * 1994-06-27 2000-10-31 Texas Instruments Incorporated Bias pump arrangement including a signal-transition-detection circuit
US5495207A (en) * 1994-08-31 1996-02-27 International Business Machines Corporation Differential current controlled oscillator with variable load
US5513225A (en) * 1994-08-31 1996-04-30 International Business Machines Corporation Resistorless phase locked loop circuit employing direct current injection
US5491439A (en) * 1994-08-31 1996-02-13 International Business Machines Corporation Method and apparatus for reducing jitter in a phase locked loop circuit
US5525932A (en) * 1994-08-31 1996-06-11 International Business Machines Corporation Lock indicator for phase locked loop circuit
US5619161A (en) * 1994-08-31 1997-04-08 International Business Machines Corporation Diffrential charge pump with integrated common mode control
JP2718375B2 (ja) * 1994-09-30 1998-02-25 日本電気株式会社 チャージポンプ回路
US5694074A (en) * 1994-10-31 1997-12-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit being able to generate sufficient boost potential disregarding generation of noise
US5541551A (en) * 1994-12-23 1996-07-30 Advinced Micro Devices, Inc. Analog voltage reference generator system
KR0149220B1 (ko) * 1994-12-27 1998-12-01 김주용 챠지 펌프 회로
FR2729014A1 (fr) * 1994-12-29 1996-07-05 Gec Alsthom Transport Sa Dispositif electronique de conversion de l'energie electrique et installation d'alimentation en faisant usage
DE69518826T2 (de) * 1995-04-14 2001-02-22 Stmicroelectronics S.R.L., Agrate Brianza Spannungserhöhungsschaltung zur Erzeugung eines annähernd konstanten Spannungspegels
US5973956A (en) * 1995-07-31 1999-10-26 Information Storage Devices, Inc. Non-volatile electrically alterable semiconductor memory for analog and digital storage
US5625544A (en) * 1996-04-25 1997-04-29 Programmable Microelectronics Corp. Charge pump
US5907484A (en) * 1996-04-25 1999-05-25 Programmable Microelectronics Corp. Charge pump
US5994948A (en) * 1997-08-27 1999-11-30 Sgs-Thomson Microelectronics S.R.L. CMOS twin-tub negative voltage switching architecture
US6275097B1 (en) 1999-04-02 2001-08-14 S3 Incorporated, Inc. Differential charge pump with low voltage common mode feedback circuit
US6636104B2 (en) * 2000-06-13 2003-10-21 Microsemi Corporation Multiple output charge pump
US6556067B2 (en) * 2000-06-13 2003-04-29 Linfinity Microelectronics Charge pump regulator with load current control
US7467379B2 (en) * 2001-01-16 2008-12-16 International Business Machines Corporation System and method for incrementally executing a client/server application
CA2437888A1 (en) * 2001-02-12 2002-08-22 Matrics, Inc. Radio frequency identification architecture
RU2211478C2 (ru) * 2001-04-25 2003-08-27 Федеральный научно-производственный центр закрытое акционерное общество "Научно-производственный концерн (объединение) "ЭНЕРГИЯ" Автономная система электропитания
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US6720822B2 (en) * 2001-10-31 2004-04-13 Stmicroelectronics S.R.L. Negative charge pump architecture with self-generated boosted phases
DE10157865A1 (de) * 2001-11-26 2003-06-26 Infineon Technologies Ag Programmierbare Spannungspumpe mit Masse-Option
US6498737B1 (en) * 2002-01-16 2002-12-24 Taiwan Semiconductor Manufacturing Company Voltage regulator with low sensitivity to body effect
US6788130B2 (en) * 2002-09-25 2004-09-07 Texas Instruments Incorporated Efficient charge pump capable of high voltage operation
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
US7649402B1 (en) * 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7119604B2 (en) * 2004-06-17 2006-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Back-bias voltage regulator having temperature and process variation compensation and related method of regulating a back-bias voltage
WO2006002347A1 (en) 2004-06-23 2006-01-05 Peregrine Semiconductor Corporation Integrated rf front end
US7372318B2 (en) 2004-07-26 2008-05-13 Honeywell International Inc. Precision, low drift, stacked voltage reference
FR2878986B1 (fr) * 2004-12-08 2007-04-27 Atmel Corp Principe de regulation de puissance d'une sortie a haute tension dans des dispositifs de circuits integres
JP2006311731A (ja) * 2005-04-28 2006-11-09 Seiko Instruments Inc 電子回路
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US20070126494A1 (en) * 2005-12-06 2007-06-07 Sandisk Corporation Charge pump having shunt diode for improved operating efficiency
US20070139099A1 (en) * 2005-12-16 2007-06-21 Sandisk Corporation Charge pump regulation control for improved power efficiency
US7372320B2 (en) * 2005-12-16 2008-05-13 Sandisk Corporation Voltage regulation with active supplemental current for output stabilization
US20070229149A1 (en) * 2006-03-30 2007-10-04 Sandisk Corporation Voltage regulator having high voltage protection
US7554311B2 (en) * 2006-07-31 2009-06-30 Sandisk Corporation Hybrid charge pump regulation
US7368979B2 (en) 2006-09-19 2008-05-06 Sandisk Corporation Implementation of output floating scheme for hv charge pumps
US9595825B2 (en) 2007-01-09 2017-03-14 Power Monitors, Inc. Method and apparatus for smart circuit breaker
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
DE102007023652B4 (de) * 2007-05-22 2013-08-14 Austriamicrosystems Ag Spannungsregler und Verfahren zur Spannungsregelung
US7586363B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Diode connected regulation of charge pumps
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
WO2009111386A2 (en) 2008-03-04 2009-09-11 Power Monitors, Inc. Method and apparatus for a voice-prompted electrical hookup
US7683700B2 (en) 2008-06-25 2010-03-23 Sandisk Corporation Techniques of ripple reduction for charge pumps
EP2421132A2 (en) * 2008-07-18 2012-02-22 Peregrine Semiconductor Corporation Charge pump with a plurality of transfer control switches
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US7795952B2 (en) 2008-12-17 2010-09-14 Sandisk Corporation Regulation of recovery rates in charge pumps
US8773108B2 (en) 2009-11-10 2014-07-08 Power Monitors, Inc. System, method, and apparatus for a safe powerline communications instrumentation front-end
US8775109B2 (en) 2010-07-29 2014-07-08 Power Monitors, Inc. Method and apparatus for a demand management monitoring system
US10060957B2 (en) 2010-07-29 2018-08-28 Power Monitors, Inc. Method and apparatus for a cloud-based power quality monitor
US9413362B2 (en) 2011-01-18 2016-08-09 Peregrine Semiconductor Corporation Differential charge pump
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
CN105404346B (zh) * 2015-12-22 2017-08-08 上海华虹宏力半导体制造有限公司 电压调整、高压产生和存储器电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421249A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Logic circuit
JPS5434044A (en) * 1977-08-19 1979-03-13 Seiko Instr & Electronics Ltd Constant voltage circuit
JPS5632758A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Substrate bias generating circuit
JPS5717227A (en) * 1980-07-04 1982-01-28 Hitachi Ltd Integrated circuit device
US4439692A (en) * 1981-12-07 1984-03-27 Signetics Corporation Feedback-controlled substrate bias generator
US4553047A (en) * 1983-01-06 1985-11-12 International Business Machines Corporation Regulator for substrate voltage generator
US4631421A (en) * 1984-08-14 1986-12-23 Texas Instruments CMOS substrate bias generator
JPS6159688A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd 半導体集積回路装置
JPS6212148A (ja) * 1985-07-10 1987-01-21 Fujitsu Ltd 半導体集積回路装置
JPS62188255A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 基準電圧発生回路
KR890005159B1 (ko) * 1987-04-30 1989-12-14 삼성전자 주식회사 백 바이어스 전압 발생기
US4837459A (en) * 1987-07-13 1989-06-06 International Business Machines Corp. CMOS reference voltage generation
US4961167A (en) * 1988-08-26 1990-10-02 Mitsubishi Denki Kabushiki Kaisha Substrate bias generator in a dynamic random access memory with auto/self refresh functions and a method of generating a substrate bias therein

Also Published As

Publication number Publication date
DE68917900D1 (de) 1994-10-06
KR940001251B1 (ko) 1994-02-18
DE68917900T2 (de) 1995-02-02
EP0382929B1 (en) 1994-08-31
US5029282A (en) 1991-07-02
EP0382929A2 (en) 1990-08-22
JPH02215154A (ja) 1990-08-28
EP0382929A3 (en) 1990-09-26

Similar Documents

Publication Publication Date Title
KR900013380A (ko) 전압 제어회로
KR880014438A (ko) Cmos 직접회로
KR910002130A (ko) 반도체집적회로
KR880014568A (ko) 기준 전위 발생회로
KR840008097A (ko) 기판 바이어스 전압제어회로 및 방법
KR870011696A (ko) 전원전압강하회로
KR880001111A (ko) 반도체 집적회로
KR880001108A (ko) Cmos 입력회로
KR900002558A (ko) 출력회로
KR900010529A (ko) 전압 발생회로
KR910002127A (ko) 전원절환회로
KR910008863A (ko) 반도체 집적회로
KR890011209A (ko) 듀일 슬로프 파형 발생회로
KR880012009A (ko) BiMOS 논리회로
KR900011152A (ko) 전원전압 강하검파 및 초기화회로 재설정 회로
KR890009000A (ko) 디지탈 집적 회로
KR910016077A (ko) 반도체집적회로
KR890016740A (ko) Bi-CMOS인버터 회로
KR910020896A (ko) 반도체집적회로
KR910021019A (ko) 지연회로
KR910019340A (ko) 반도체 집적회로
KR920003703A (ko) 저 동적 임피던스를 갖는 단일-구동 레벨이동기
KR910010860A (ko) 출력회로
KR960036331A (ko) 출력회로
KR890001283A (ko) 발생기 회로

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20030130

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20040219

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20040219

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000