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KR870011696A - 전원전압강하회로 - Google Patents

전원전압강하회로 Download PDF

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Publication number
KR870011696A
KR870011696A KR870005455A KR870005455A KR870011696A KR 870011696 A KR870011696 A KR 870011696A KR 870005455 A KR870005455 A KR 870005455A KR 870005455 A KR870005455 A KR 870005455A KR 870011696 A KR870011696 A KR 870011696A
Authority
KR
South Korea
Prior art keywords
power supply
supply voltage
mis transistor
external power
voltage drop
Prior art date
Application number
KR870005455A
Other languages
English (en)
Other versions
KR900004725B1 (ko
Inventor
준이치 츠지모도
Original Assignee
와타리 스기이치로
가부시키 가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 와타리 스기이치로, 가부시키 가이샤 도시바 filed Critical 와타리 스기이치로
Publication of KR870011696A publication Critical patent/KR870011696A/ko
Application granted granted Critical
Publication of KR900004725B1 publication Critical patent/KR900004725B1/ko

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Control Of Electrical Variables (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Dram (AREA)

Abstract

내용 없음

Description

전원전압강하회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 전원전압강하회로를 나타내는 도면,
제2도는 본 발명의 1실시예에 따른 전원강압회로가 형성된 반도체메모리칩을 나타내는 도면,
제3도는 제2도에 도시된 전원전압강하회로의 회로도.

Claims (1)

  1. 외부전원전압이 공급되는 전원단자(VDD)와 출력선(L1,L2), 상기 전원단자(VDD)와 출력선(L1)에 각각 접속되는 드레인과 소오스 및 절연게이트를 갖추고서 외부전원전압을 강화시켜주는 n채널 MIS트랜지스터(T1), 이 MIS트랜지스터(T1)의 챈널로 작용하는 표면영역을 갖추고서 MIS트랜지스터(T1)의 소오스와 같은 전위로 설정되도록 접속되는 반도체본체 및 소정치보다 높은 외부전원전압하에서 이 외부전원적압보다 낮은 정전압을 MIS트랜지스터(T1)의 절연게이트에 공급해주게 되는 정전압발생회로(52,54)로 구성된 것을 특징으로 하는 전원전압강하회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870005455A 1986-05-31 1987-05-30 전원전압 강하회로 KR900004725B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP126339 1986-05-31
JP61-126339 1986-05-31
JP61126339A JPH083766B2 (ja) 1986-05-31 1986-05-31 半導体集積回路の電源電圧降下回路

Publications (2)

Publication Number Publication Date
KR870011696A true KR870011696A (ko) 1987-12-26
KR900004725B1 KR900004725B1 (ko) 1990-07-05

Family

ID=14932724

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870005455A KR900004725B1 (ko) 1986-05-31 1987-05-30 전원전압 강하회로

Country Status (5)

Country Link
US (1) US4868483A (ko)
EP (1) EP0248381B1 (ko)
JP (1) JPH083766B2 (ko)
KR (1) KR900004725B1 (ko)
DE (1) DE3775279D1 (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2759969B2 (ja) * 1988-07-29 1998-05-28 ソニー株式会社 内部降圧回路
KR910007740B1 (ko) * 1989-05-02 1991-09-30 삼성전자 주식회사 비트라인 안정화를 위한 전원전압 추적회로
US4952863A (en) * 1989-12-20 1990-08-28 International Business Machines Corporation Voltage regulator with power boost system
NL9001017A (nl) * 1990-04-27 1991-11-18 Philips Nv Bufferschakeling.
KR930009148B1 (ko) * 1990-09-29 1993-09-23 삼성전자 주식회사 전원전압 조정회로
US5144223A (en) * 1991-03-12 1992-09-01 Mosaid, Inc. Bandgap voltage generator
JP2647276B2 (ja) * 1991-04-30 1997-08-27 株式会社東芝 定電位発生用半導体装置
KR940003406B1 (ko) * 1991-06-12 1994-04-21 삼성전자 주식회사 내부 전원전압 발생회로
KR930008886B1 (ko) * 1991-08-19 1993-09-16 삼성전자 주식회사 전기적으로 프로그램 할 수 있는 내부전원 발생회로
KR940008286B1 (ko) * 1991-08-19 1994-09-09 삼성전자 주식회사 내부전원발생회로
US5177431A (en) * 1991-09-25 1993-01-05 Astec International Ltd. Linear programming circuit for adjustable output voltage power converters
US5266886A (en) * 1992-10-23 1993-11-30 Intel Corporation CMOS power supply voltage limiter
JP3304539B2 (ja) * 1993-08-31 2002-07-22 富士通株式会社 基準電圧発生回路
US5506496A (en) * 1994-10-20 1996-04-09 Siliconix Incorporated Output control circuit for a voltage regulator
JP3592423B2 (ja) * 1996-01-26 2004-11-24 株式会社ルネサステクノロジ 半導体集積回路装置
JP3234153B2 (ja) * 1996-04-19 2001-12-04 株式会社東芝 半導体装置
JPH10145194A (ja) * 1996-11-13 1998-05-29 Sharp Corp 電圧比較器
EP1177490A1 (en) * 1999-12-21 2002-02-06 Koninklijke Philips Electronics N.V. Voltage regulator provided with a current limiter
US7733165B2 (en) * 2007-02-27 2010-06-08 Infineon Technologies Ag Circuit arrangement with interference protection
FR2918518B1 (fr) * 2007-07-02 2009-09-25 St Microelectronics Sa Dispositif et procede de controle des interrupteurs d'alimentation
US20100283445A1 (en) * 2009-02-18 2010-11-11 Freescale Semiconductor, Inc. Integrated circuit having low power mode voltage regulator
US8319548B2 (en) * 2009-02-18 2012-11-27 Freescale Semiconductor, Inc. Integrated circuit having low power mode voltage regulator
US8400819B2 (en) * 2010-02-26 2013-03-19 Freescale Semiconductor, Inc. Integrated circuit having variable memory array power supply voltage
US9035629B2 (en) 2011-04-29 2015-05-19 Freescale Semiconductor, Inc. Voltage regulator with different inverting gain stages
RU2487392C2 (ru) * 2011-07-08 2013-07-10 Открытое акционерное общество "Информационные спутниковые системы" имени академика М.Ф. Решетнева" Резервированный стабилизатор напряжения на мдп-транзисторах
US9019005B2 (en) * 2012-06-28 2015-04-28 Infineon Technologies Ag Voltage regulating circuit
US10879898B2 (en) 2018-01-23 2020-12-29 Samsung Electronics Co., Ltd. Power gating circuit for holding data in logic block

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515512A (en) * 1978-07-19 1980-02-02 Hitachi Ltd Constant voltage output circuit
US4585955B1 (en) * 1982-12-15 2000-11-21 Tokyo Shibaura Electric Co Internally regulated power voltage circuit for mis semiconductor integrated circuit
JPS59218042A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体集積回路
JPS60521A (ja) * 1983-06-15 1985-01-05 Mitsubishi Electric Corp 電流制限保護回路
JPH0697558B2 (ja) * 1983-06-27 1994-11-30 株式会社東芝 半導体集積回路
GB2146808B (en) * 1983-09-15 1986-11-12 Ferranti Plc Constant voltage circuits
JPH0772852B2 (ja) * 1984-01-26 1995-08-02 株式会社東芝 サブミクロン半導体ｌｓｉのチップ内電源変換回路
JP2592234B2 (ja) * 1985-08-16 1997-03-19 富士通株式会社 半導体装置

Also Published As

Publication number Publication date
EP0248381B1 (en) 1991-12-18
JPH083766B2 (ja) 1996-01-17
DE3775279D1 (de) 1992-01-30
KR900004725B1 (ko) 1990-07-05
US4868483A (en) 1989-09-19
EP0248381A1 (en) 1987-12-09
JPS62282316A (ja) 1987-12-08

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