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JP4057184B2 - 原子層蒸着法を用いた薄膜製造方法 - Google Patents

原子層蒸着法を用いた薄膜製造方法 Download PDF

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JP4057184B2
JP4057184B2 JP03441399A JP3441399A JP4057184B2 JP 4057184 B2 JP4057184 B2 JP 4057184B2 JP 03441399 A JP03441399 A JP 03441399A JP 3441399 A JP3441399 A JP 3441399A JP 4057184 B2 JP4057184 B2 JP 4057184B2
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reactant
thin film
substrate
chamber
chemisorbed
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JP2000054134A (ja
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榮 寛 金
相 忍 李
昌 洙 朴
相 ▲みん▼ 李
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2

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Description

【０００１】
【発明の属する技術分野】
本発明は薄膜製造方法に係り、特に原子層蒸着法（Atomic Layer Deposition:以下、"ALD法"と称する）による薄膜製造方法に関する。
【０００２】
【従来の技術および発明が解決しようとする課題】
一般的に、薄膜は半導体素子の誘電体（dielectric）、液晶表示素子の透明な導電体（transparent conductor）及び電子発光薄膜表示素子の保護層等で多様に使われる。前記薄膜は蒸気法、化学気相蒸着法、ＡＬＤ法等によって形成される。
【０００３】
この中から、前記ＡＬＤ法は表面調節工程であり２次元的な層間（layer by layer）蒸着を用いる。このようなＡＬＤ法は吸着が常に表面運動領域でなされるので非常に優秀な段差被覆性を有する。また、熱分解ではない各反応物の周期的供給を通した化学置換で反応物を分解するので膜密度が高くて優秀な化学量論的な膜を得ることができる。また、工程中発生する化学置換による副産物は全て気体であるから除去が容易でチャンバの洗浄が容易であり、温度のみ工程変数であるから工程調節と維持が容易である。
【０００４】
しかし、従来のＡＬＤ法は基板表面に反応物を十分に吸着させられなくて薄膜内にピンホールなどの欠陥が発生して薄膜の物理的特性、例えば膜密度が落ちる問題点がある。また、従来のＡＬＤ法は化学配位子などが完全に取り除かれなくて優秀な化学量論的な薄膜を得られない問題点がある。
【０００５】
【発明が解決しようとする課題】
本発明は前記のような問題点に鑑みてなされたものであり、本発明の目的は、原子層蒸着法で膜密度が高くて、優秀な化学量論的な薄膜を得ることができる薄膜製造方法を提供することにある。
【０００６】
【課題を解決するための手段】
前記のような目的を達成するための本発明による薄膜製造方法は、基板がローディングされたチャンバに第１反応物を注入して前記基板上に前記第１反応物を化学吸着させる段階を含む。続いて、前記化学吸着された第１反応物上に物理吸着された第１反応物を取り除く。次に、前記チャンバに再び前記第１反応物を注入して前記基板上に稠密するように化学吸着させた後、前記稠密するように化学吸着された第１反応物上に物理吸着された第１反応物を取り除く。続いて、前記チャンバに第２反応物を注入して前記基板の表面に化学吸着させ、前記化学吸着された第１反応物と、前記第２反応物とを化学置換させて固体薄膜を形成した後、前記稠密するように化学吸着された第１反応物と第２反応物上に物理吸着された第２反応物を取り除く。次に、前記チャンバに再び前記第２反応物を注入して前記基板上に前記第２反応物を稠密するように化学吸着および物理吸着させて化学置換によって固体薄膜を形成する。また、前記前記固体薄膜は単原子酸化物からなる。
【０００７】
本発明の薄膜製造方法は前記第２反応物を稠密するように吸着させた後、物理吸着された第２反応物と前記化学置換時生成される残留物を取り除くこともできる。ここに、前記した物理吸着された反応物を取り除くには、チャンバを不活性ガス等でパージしたりまたは減圧にポンピングすることにより達成することができる。そして、前記第１反応物注入から物理吸着された第１反応物の除去を順次的に２回以上反復して実施できる。また、前記第２反応物注入から物理吸着された第２反応物及び残留物の除去を順次的に２回以上反復して実施することもできる。前記基板は（１００）のシリコン基板で構成できる。前記第１反応物及び第２反応物は各々前記固体薄膜を構成する元素と化学配位子で構成される。
【０００９】
前記単原子酸化物の例としてはＡｌ２Ｏ ３ を挙げることができる。この場合、前記第１反応物はＡｌ（ＣＨ ３ ） ３ であり、前記第２反応物は純水である
【００１１】
このように本発明は第１反応物及び第２反応物を稠密するように吸着させて不純物を、例えば減圧にポンピングまたは不活性ガス等のパージによって完全に取り除くので膜密度が高くて優秀な化学量論的な薄膜を得ることができる。
【００１２】
【発明の実施の形態】
以下、添付した図面を参照して本発明の望ましい実施例を詳しく説明する。
【００１３】
図１乃至図８は本発明による原子層蒸着法を用いた薄膜を製造する過程を説明するために示した図面である。図１乃至図８で、蒸着しようとする薄膜をＡとＢでなされる２成分化合物とする時、第１反応物をＡＲｎ（ｇ）として第２反応物をＢＰｎ（ｇ）という。ここで、Ｒｎはｎ個のＲという基で形成された化学配位子であり、Ｐｎはｎ個のＰという基で形成された化学配位子である。ｇはガス状態であることを示す。
【００１４】
図１を参照すると、ＡＲｎ（ｇ）という第１反応物を基板１がローディングされたチャンバ（図示せず）に注入して基板１、例えば（１００）のシリコン基板の表面に第１反応物を化学吸着及び物理吸着させる。前記第１反応物は基板の表面に吸着されたことは化学吸着されていることであり、前記化学吸着された第１反応物上に吸着されたことは物理吸着されていることである。ところが、ＡＲｎ（ｇ）という第１反応物は一度注入されたので化学吸着を起こすことができる空間が物理吸着されたＡＲｎによって遮られてあって基板上に空き空間３が形成されている。
【００１５】
図２を参照すると、前記化学吸着及び物理吸着された第１反応物が形成されたチャンバを不活性ガス等でパージしたり減圧にポンピングして物理吸着された第１反応物をすべて取り除く。このようになると、基板１の表面には化学吸着されている第１反応物が形成される。前記化学吸着された第１反応物は固体状態のＡＲｎ（ｓ）であり、基板１の表面は露出されている部分が多くある。ここで、ｓは固体状態を示す。
【００１６】
図３を参照すると、固体状態のＡＲｎ（ｓ）が形成された基板１を含むチャンバに再びＡＲｎ（ｇ）という第１反応物を注入して前記基板１の表面に第１反応物を稠密するように化学吸着及び物理吸着させる。このようになると、図１で示された空き空間３に第１反応物が化学吸着及び物理吸着される。ここでも図１と同じく基板１の表面には第１反応物が化学吸着され、化学吸着された第１反応物上に物理吸着された第１反応物が形成される。
【００１７】
図４を参照すると、前記化学吸着された第１反応物が形成された基板１を含むチャンバを減圧にポンピングしたり不活性ガス等をパージして物理吸着された第１反応物をすべて取り除く。このように第１反応物の注入及び物理吸着された第１反応物の除去過程を二回経るようになると、基板１の表面には稠密するように化学吸着されている第１反応物、すなわち固体状態のＡＲｎ（ｓ）のみ残っているようになって化学配位子などの不純物が完全に取り除かれる。ここで、ｓは固体状態を示す。本実施例で、前記図１乃至図４の過程を２回以上反復することもある。
【００１８】
図５を参照すると、稠密するように化学吸着された第１反応物が形成された基板１を含むチャンバにＢＰｎ（ｇ）という第２反応物を注入して化学吸着及び物理吸着させる。前記基板の表面に吸着されている第２反応物は化学吸着されていることであり、前記化学吸着された第２反応物上に吸着された第２反応物は物理吸着されているものである。このようになると、前記化学吸着された第１反応物と第２反応物は化学置換方法によってＡ及びＢ原子でなされた原子層単位の稠密しない単一層を形成するようになる。この時、化学配位子であるＲｎとＰｎは蒸気圧が高い状態で取り除かれる。ところが、図５の第２反応物は図１の第１反応物と同じく基板の表面に稠密するように化学吸着されないため、前記第２反応物は第１反応物と十分に化学置換されなくて単一層内に不純物が発生したり化学量論的な組成比が合わなくなる。
【００１９】
図６を参照すると、前記稠密しない単一層及び物理吸着された第２反応物が形成された基板を含むチャンバを減圧にポンピングしたり不活性ガス等をパージして物理吸着された第２反応物を取り除く。このようになると、基板の表面には化学吸着されている固体状態の単一層が形成される。ところが、図６の固体状態の単一層はＡＲｎＢＰｎ（ｓ）形態になってＲｎＰｎ（ｓ）の不純物が残っているため化学量論的な組成比が合わなくて膜密度が低下される。ここで、ｓは固体状態を示す。
【００２０】
図７を参照すると、前述した化学量論的な組成比と膜密度を向上させるために、固体状態の稠密しない単一層が形成された基板を含むチャンバに再びＢＰｎ（ｇ）という第２反応物を注入して前記基板の表面に第２反応物を化学吸着及び物理吸着させる。前記基板の表面に吸着されている第２反応物は化学吸着されていることであり、前記化学吸着された第２反応物上に吸着された第２反応物は物理吸着されていることである。このようになると、前記化学吸着された第１反応物と第２反応物は化学置換方法によってＡ及びＢ原子でなされた、原子層単位の厚さを有する稠密した単一層を形成するようになる。この時、化学配位子であるＲｎとＰｎは蒸気圧が高い気体状態で取り除かれる。
【００２１】
ところが、図７の第２反応物は図５で稠密するように化学吸着されない基板の表面に化学吸着されるために、前記第２反応物は稠密した第１反応物と十分に化学置換されて単一層内に不純物を減少させ化学量論的な組成比も合うようになる。
【００２２】
図８を参照すると、前記稠密した単一層と物理吸着された第２反応物が形成された基板を含むチャンバを不活性ガス等でパージしたり減圧にポンピングして物理吸着された第２反応物をすべて取り除く。このようになると、基板の表面には稠密するように化学吸着されている固体状態の稠密した単一層、すなわちＡＢ（ｓ）のみ残るようになる。ここで、ｓは固体状態を示す。本実施例で、前記図５乃至図８の過程を２回以上反復することもできる。
【００２３】
一方、図８では基板の表面上にＡとＢが形成されてＡＢ（ｓ）という化合物が形成されている。しかし、本発明の原子層蒸着法を適用すると図９の９ａのように基板の表面にＡが形成され、Ａ上にＢが形成されてＡＢ（ｓ）という化合物が形成されたり、図９の９ｂのように基板の表面にＡ及びＢが形成されて前記Ａ及びＢ上に各々Ｂ及びＡが形成されて全体的にＡＢ（ｓ）という化合物が形成されることができる。
【００２４】
ここで、本発明の薄膜製造方法を用いて薄膜を形成する過程を説明する。
【００２５】
図１０は本発明の薄膜製造方法に利用された薄膜製造装置を説明するために示した概略図であり、図１１は本発明の薄膜製造方法を説明するために示した流れ図である。
【００２６】
まず、チャンバ３０に基板１、例えば（１００）のシリコン基板をローディングさせた後、ヒーター５を用いて前記基板を１５０乃至３７５℃、望ましくは３００℃の温度に維持する（ステップ１００）。この時、前記基板を３００℃に維持するためにはヒーター５の温度は約４５０℃に維持する。
【００２７】
続いて、前記チャンバ３０を１５０乃至３７５℃の工程温度に維持した状態で第１バブラ１２中にある第１反応物１１、例えばトリメチルアルミニウム（Ａｌ（ＣＨ3）3：ＴＭＡ）を前記チャンバ３０に１ｍ秒乃至１０秒間、望ましくは０．５秒間注入する（ステップ１０５）。
【００２８】
ここで、前記第１反応物１１の注入はバブリング方式を用いるが、ガスソース１９のアルゴンガス１００ｓｃｃｍをキャリアガスとして２０乃至２２℃に維持された第１バブラ１２に注入して前記液体状態の第１反応物１１をガス形態に変更させた後、バルブ９を選択的に作動させて第１ガスライン１３及びシャワーヘッド１５を通して注入する。そして、前記第１反応物１１の注入時前記第１反応物１１の流速の向上及び稀釈のために前記ガスソース１９の窒素ガスを第２ガスライン１８及びシャワーヘッド１５を通して４００ｓｃｃｍ注入する。結果的に、第１反応物１１の注入時チャンバ３０に提供されるガスの量は５００ｓｃｃｍであり、この時チャンバの圧力は１乃至２Ｔｏｒｒに維持する。このようになると、基板１の表面に原子大きさ程度で第１反応物１１が化学吸着され、前記化学吸着された第１反応物１１上に物理吸着第１反応物１１が形成される。
【００２９】
次に、前記１５０乃至３７５℃の工程温度と１乃至２Ｔｏｒｒの工程圧力を維持した状態で、チャンバ３０に選択的にバルブ９を作動させて第１ガスライン１３または第２ガスライン１８を用いてガスソース１９の窒素ガス４００ｓｃｃｍを０．１乃至１０秒間、望ましくは１秒間パージして物理吸着された第１反応物を取り除く（ステップ１１０）。本実施例では前記物理吸着された第１反応物をパージして除去したが、パージしなくて前記チャンバを真空状態にポンピングして物理吸着された第１反応物を取り除くこともできる。
【００３０】
次に、前記物理吸着された第１反応物が取り除かれたチャンバ３０にステップ１０５のように第１反応物１１を再び注入する（ステップ１１５）。この時、前記ステップ１１５の第１反応物の注入時間はステップ１０５の第１反応物の注入時間より同じであったり短くする。続いて、前記チャンバ３０にステップ１１０のように物理吸着された第１反応物を取り除く（ステップ１２０）。この時、前記ステップ１２０の物理吸着された第１反応物の除去時間はステップ１１０の第１反応物の除去時間より同じであったり短くする。このように第１反応物の注入、第１パージ過程を再び反復的に実施すると、基板上に稠密するように化学吸着された第１反応物が形成される。本実施例では前記第１反応物の注入及び物理吸着された第１反応物除去過程を順次的に各々２回実施したが、さらに実施することもある。
【００３１】
次に、稠密するように化学吸着された第１反応物が形成された基板が含まれたチャンバに前記１５０乃至３７５℃の工程温度と１乃至２Ｔｏｒｒの工程圧力を維持した状態で、第２バブラ１４中にある第２反応物１７、例えば純水をバルブ１０を選択的に作動させてガスライン１６及びシャワーヘッド１５を通して１ｍ秒乃至１０秒間、望ましくは０．５秒間注入する（ステップ１２５）。
【００３２】
ここで、前記第２反応物１７の注入方法は第１反応物の注入と同一にバブリング方式を用いる。すなわち、ガスソース１９のアルゴンガス１００ｓｃｃｍをキャリアガスとして２０乃至２２℃に維持された第２バブラ１４に注入して前記液体状態の第２反応物１７をガス形態に変更させた後、第３ガスライン１６及びシャワーヘッド１５を通して注入する。そして、前記第２反応物１７の注入時前記第２反応物１７の流速の向上及び稀釈のために、前記ガスソース１９の窒素ガスを第２ガスライン１８及びシャワーヘッド１５を通して４００ｓｃｃｍ注入する。結果的に、第２反応物１７の注入時チャンバ３０に提供されるガスの量は５００ｓｃｃｍであり、この時チャンバ３０の圧力は１乃至２Ｔｏｒｒに維持する。このようになると、稠密するように化学吸着された第１反応物が形成された基板１上に第２反応物が化学吸着され、前記化学吸着された第２反応物と第１反応物上に第２反応物が物理吸着される。そして、前記稠密するように化学吸着された第１反応物と稠密するように化学吸着されない第２反応物は化学置換方法によって原子層単位の稠密しないアルミニウム酸化膜を形成させる。
【００３３】
次に、前記１５０乃至３７５℃の工程温度と１乃至２Ｔｏｒｒの工程圧力を維持した状態で稠密しない原子層単位のアルミニウム酸化膜が形成された基板を含むチャンバ３０に選択的にバルブ１０を作動させて第２ガスライン１８または第３ガスライン１６を用いてガスソース１９の窒素ガス４００ｓｃｃｍを０．１乃至１０秒間、望ましくは１秒間パージして物理吸着された第２反応物を取り除く（ステップ１３０）。本実施例では前記物理吸着された第２反応物をパージして除去したが、パージしなくて前記チャンバを真空状態にポンピングして物理吸着された第２反応物を取り除くこともある。
【００３４】
次に、前記物理吸着された第２反応物が取り除かれたチャンバ３０にステップ１２５のように第２反応物１１を再び注入する（ステップ１３５）。この時、前記ステップ１３５の第２反応物の注入時間はステップ１２５の第２反応物の注入時間より同じであったり短くする。続いて、前記チャンバ３０に段階１３０のように物理吸着された第２反応物を取り除く（ステップ１４０）。このように第２反応物の注入、物理吸着された第２反応物の除去過程を再び反復的に実施すると、基板上に稠密するように化学吸着された第２反応物が形成される。結果的に、前記稠密するように化学吸着された第１反応物と稠密するように化学吸着された第２反応物は化学置換方法によって原子層単位の稠密したアルミニウム酸化膜を形成するようになる。本実施例では前記第２反応物の注入及び物理吸着された第２反応物除去過程を順次的に各々２回実施したが、さらに実施することもある。
【００３５】
以後に、前記したような原子層大きさの薄膜を形成する段階、すなわち第１反応物注入段階（ステップ１０５）から物理吸着された第２反応物除去段階（ステップ１４０）までを周期的に反復遂行して適正厚さ、例えば１０Å乃至１０００Å程度の薄膜が形成されたのかを確認する（ステップ１４５）。適正厚さになると前記サイクルを反復しなくてチャンバの工程温度と工程圧力を常温及び常圧に維持することによって薄膜製造過程を完了する（ステップ１５０）。
【００３６】
前記図１１で、第１反応物及び第２反応物を各々トリメチルアルミニウム（Ａｌ（ＣＨ3）3：ＴＭＡ）及び純水を用いてアルミニウム酸化膜（Ａｌ2Ｏ3）を形成したが、第１反応物と第２反応物を各々ＴｉＣｌ4とＮＨ3を用いればＴｉＮ膜を形成することができる。そして、第１反応物及び第２反応物としてＭｏＣｌ5とＨ2を用いればＭｏ膜を形成することができる。
【００３７】
さらに、本発明の薄膜製造方法によると前記アルミニウム酸化膜、ＴｉＮ膜、Ｍｏ膜以外の、単原子の固体薄膜、単原子酸化物、複合酸化物、単原子窒化物または複合窒化物を形成することができる。前記単原子の固体薄膜の例としてはＡｌ、Ｃｕ、Ｔｉ、Ｔａ、Ｐｔ、Ｒｕ、Ｒｈ、Ｉｒ、ＷまたはＡｇを挙げることができ、単原子酸化物の例としてはＡｌ2Ｏ3、ＴｉＯ2、Ｔａ2Ｏ5、ＺｒＯ2、ＨｆＯ2、Ｎｂ2Ｏ5、ＣｅＯ2、Ｙ2Ｏ3、ＳｉＯ2、Ｉｎ2Ｏ3、ＲｕＯ2又はＩｒＯ2等を挙げることができ、複合酸化物の例としてはＳｒＴｉＯ3、ＰｂＴｉＯ3、ＳｒＲｕＯ3、ＣａＲｕＯ3、（Ｂａ、Ｓｒ）ＴｉＯ3、Ｐｂ（Ｚｒ、Ｔｉ）Ｏ3、（Ｐｂ、Ｌａ）（Ｚｒ、Ｔｉ）Ｏ3、（Ｓｒ、Ｃａ）ＲｕＯ3、ＳｎがドーピングされたＩｎ2Ｏ3、ＦｅがドーピングされたＩｎ2Ｏ3又はＺｒがドーピングされたＩｎ2Ｏ3を挙げることができる。また、前記単原子窒化物の例としてはＳｉＮ、ＮｂＮ、ＺｒＮ、ＴｉＮ、ＴａＮ、Ｙａ3Ｎ5、ＡｌＮ、ＧａＮ、ＷＮ又はＢＮを挙げることができ、前記複合窒化物の例としてはＷＢＮ、ＷＳｉＮ、ＴｉＳｉＮ、ＴａＳｉＮ、ＡｌＳｉＮ又はＡｌＴｉＮを挙げることができる。
【００３８】
以上のように本発明の薄膜製造方法は工程温度と工程圧力を一定に維持した状態で、第１反応物注入、物理吸着された第１反応物の除去を反復的に遂行した後、第２反応物注入及び物理吸着された第２反応物の除去を反復的に遂行する。このようになると、基板上に第１反応物が稠密するように蒸着された状態で稠密するように蒸着される第２反応物と化学置換によって反応するので、薄膜の膜密度が高くて優秀な化学量論的な薄膜を得ることができる。
【００３９】
図１２は本発明による薄膜製造方法によって製造されたアルミニウム酸化膜のサイクル当厚さを示したグラフである。
【００４０】
具体的に、Ｘ軸はサイクル数を示す。ここで、一つのサイクルは図１１に説明されたように第１反応物注入、物理吸着された第１反応物の除去、第１反応物注入、物理吸着された第１反応物除去、第２反応物注入及び物理吸着された第２反応物の除去、第２反応物注入、物理吸着された第２反応物を取り除く段階を示す。また、Ｙ軸はアルミニウム酸化膜の厚さを示す。図１２に示されたように本発明の薄膜製造方法によると、アルミニウム酸化膜がサイクル当１．１Åの厚さに成長され、これは理論値と類似な値を示す。
【００４１】
図１３は本発明による薄膜製造方法によって製造されたアルミニウム酸化膜の基板内均一度を説明するために示したグラフである。
【００４２】
具体的に、Ｘ軸は８インチ基板の中央点、前記中央点を中心に１．７５インチの半径を有する円で９０度間隔で４点、前記中央点を中心に３．５インチの半径を有する円で９０度間隔で４点を合せて総９点の測定位置を示す。Ｙ軸はアルミニウム酸化膜の厚さを示す。図１３に示されたように８インチ基板内で均一度が非常に優秀なことが分かる。
【００４３】
図１４及び図１５は各々本発明及び従来方法によって製造されたアルミニウム酸化膜の波長による屈折率を示したグラフである。Ｘ軸は４００乃至８００ｎｍの波長を示し、Ｙ軸は屈折率を示す。
【００４４】
具体的に、本発明によって製造されたアルミニウム酸化膜の屈折率は波長４００乃至８００ｎｍの範囲で約１．６７乃至１．７３を示し、本発明では、波長４００乃至８００ｎｍの範囲で約１．６７乃至１．７３であることが好ましく、より好ましくは約１．６８９乃至１．７１０である。特に、図１４及び図１５に示されたように本発明によって製造されたアルミニウム酸化膜の屈折率が５００ｎｍ波長で１．６９８であり、従来方法アルミニウム酸化膜の屈折率１．６４９より大きくて膜密度が高いことがわかる。また、本発明によって製造されたアルミニウム酸化膜の屈折率は一般的な方法によって製造されたアルミニウム酸化膜を８５０℃で３０分間アニーリングした後に測定した屈折率と類似し、本発明のアルミニウム酸化膜はアニーリング工程が不要になる。
【００４５】
【発明の効果】
前述したように本発明の薄膜製造方法によると、原子層蒸着法を用いるため段差被覆性と均一度が優秀な薄膜を得ることができる。また、本発明の薄膜製造方法によると、工程温度と工程圧力を一定に維持した状態でそれぞれの反応物を注入した後、パージまたはポンピングして不純物を完全に取り除く過程を反復的に遂行することにより、基板上に反応物を稠密するように化学吸着させることができる。このようになると、膜密度が高く、優秀な化学量論的な薄膜を得ることができる。
【００４６】
以上、実施例を通して本発明を具体的に説明したが、本発明はこれに限らず、本発明の技術的思想内で当分野で通常の知識でその変形や改良が可能である。
【図面の簡単な説明】
【図１】本発明による原子層蒸着法を用いた薄膜を製造する過程を説明するために示した図面である。
【図２】本発明による原子層蒸着法を用いた薄膜を製造する過程を説明するために示した図面である。
【図３】本発明による原子層蒸着法を用いた薄膜を製造する過程を説明するために示した図面である。
【図４】本発明による原子層蒸着法を用いた薄膜を製造する過程を説明するために示した図面である。
【図５】本発明による原子層蒸着法を用いた薄膜を製造する過程を説明するために示した図面である。
【図６】本発明による原子層蒸着法を用いた薄膜を製造する過程を説明するために示した図面である。
【図７】本発明による原子層蒸着法を用いた薄膜を製造する過程を説明するために示した図面である。
【図８】本発明による原子層蒸着法を用いた薄膜を製造する過程を説明するために示した図面である。
【図９】図９において９ａ及び９ｂは、本発明による原子層蒸着法を用いて薄膜を製造した時、図８と異なるように形成された例を示した図面である。
【図１０】本発明の薄膜製造方法に利用された薄膜製造装置を説明するために示した概略図である。
【図１１】本発明の薄膜製造方法を説明するために示した流れ図である。
【図１２】本発明による薄膜製造方法によって製造されたアルミニウム酸化膜のサイクル当厚さを示したグラフである。
【図１３】本発明による薄膜製造方法によって製造されたアルミニウム酸化膜の基板内均一度を説明するために示したグラフである。
【図１４】本発明によって製造されたアルミニウム酸化膜の波長による屈折率を示したグラフである。
【図１５】従来方法によって製造されたアルミニウム酸化膜の波長による屈折率を示したグラフである。
【符号の説明】
１ 基板
５ ヒーター
９ バルブ
１２、１４ バブラ
１９ ガスソース
３０ チャンバ

Claims (12)

  1. （Ａ）基板がローディングされたチャンバに第１反応物を注入して前記基板上に前記第１反応物を化学吸着させる段階と、
    （Ｂ）前記化学吸着された第１反応物上に物理吸着された第１反応物を取り除く段階と、
    （Ｃ）前記チャンバに再び前記第１反応物を注入して前記基板上に稠密するように化学吸着させる段階と、
    （Ｄ）前記稠密するように化学吸着された第１反応物上に物理吸着された第１反応物を取り除く段階と、
    （Ｅ）前記チャンバに第２反応物を注入して前記基板の表面に化学吸着させ、前記化学吸着された第１反応物と、前記第２反応物とを化学置換させて固体薄膜を形成する段階と、
    （Ｆ）前記稠密するように化学吸着された第１反応物と第２反応物上に物理吸着された第２反応物を取り除く段階と、
    （Ｇ）前記チャンバに再び前記第２反応物を注入して前記基板上に前記第２反応物を稠密するように化学吸着および物理吸着させて化学置換によって固体薄膜を形成すること、
    前記固体薄膜は単原子酸化物からなること、
    を特徴とする薄膜製造方法。
  2. 前記（Ｇ）段階後、
    （Ｈ）物理吸着された第２反応物と前記（Ｇ）段階の化学置換時生成される残留物を取り除く段階をさらに含んでなされることを特徴とする請求項１に記載の薄膜製造方法。
  3. 前記（Ｂ）、（Ｄ）および（Ｆ）における取り除く段階が、前記チャンバのパージまたはポンピングによることを特徴とする請求項１記載の薄膜膜製造方法。
  4. 前記取り除く段階が、前記チャンバのパージまたはポンピングによることを特徴とする請求項２記載の得る膜製造方法。
  5. 前記（Ｅ）、（Ｆ）、（Ｇ）及び（Ｈ）段階の第２反応物注入及び物理吸着された第２反応物及び残留物の除去を順次的に２回以上反復して実施することを特徴とする請求項２または４に記載の薄膜製造方法。
  6. 前記（Ａ）、（Ｂ）、（Ｃ）、（Ｄ）段階の第１反応物注入及び物理吸着された第１反応物の除去を順次的に２回以上反復して実施することを特徴とする請求項１に記載の薄膜製造方法。
  7. 前記（Ｃ）段階の第１反応物の注入時間は（Ａ）段階の第１反応物の注入時間と同じであったり短いことを特徴とする請求項１に記載の薄膜製造方法。
  8. 前記（Ｇ）段階の第２反応物の注入時間は（Ｅ）段階の第２反応物の注入時間と同じであったり短いことを特徴とする請求項１に記載の薄膜製造方法。
  9. 前記基板は（１００）のシリコン基板であることを特徴とする請求項１に記載の薄膜製造方法。
  10. 前記第１反応物及び第２反応物は各々前記固体薄膜を構成する元素と化学配位子で構成されていることを特徴とする請求項１に記載の薄膜製造方法。
  11. 前記単原子酸化物はＡｌ２Ｏ３ であり、
    前記第１反応物はＡｌ（ＣＨ ３ ） ３ であり、
    前記第２反応物は純水であることを特徴とする請求項１に記載の薄膜製造方法。
  12. 前記Ａｌ２Ｏ３でなされた膜の屈折率は４００乃至８００ｎｍの波長範囲で１．６７乃至１．７３であることを特徴とする請求項１１に記載の薄膜製造
    方法。
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TW432119B (en) 2001-05-01
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