[go: up one dir, main page]

US6951804B2 - Formation of a tantalum-nitride layer - Google Patents

Formation of a tantalum-nitride layer Download PDF

Info

Publication number
US6951804B2
US6951804B2 US09/776,329 US77632901A US6951804B2 US 6951804 B2 US6951804 B2 US 6951804B2 US 77632901 A US77632901 A US 77632901A US 6951804 B2 US6951804 B2 US 6951804B2
Authority
US
United States
Prior art keywords
tantalum
layer
containing gas
chamber
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime, expires
Application number
US09/776,329
Other versions
US20020106846A1 (en
Inventor
Sean M. Seutter
Michael X. Yang
Ming Xi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SEUTTER, SEAN M., XI, MING, YANG, MICHAEL X.
Priority to US09/776,329 priority Critical patent/US6951804B2/en
Priority to PCT/US2002/002651 priority patent/WO2002063677A1/en
Priority to TW91101853A priority patent/TW525270B/en
Publication of US20020106846A1 publication Critical patent/US20020106846A1/en
Priority to US11/088,072 priority patent/US7094680B2/en
Priority to US11/240,189 priority patent/US7781326B2/en
Publication of US6951804B2 publication Critical patent/US6951804B2/en
Application granted granted Critical
Priority to US12/846,253 priority patent/US8114789B2/en
Priority to US13/396,311 priority patent/US9012334B2/en
Adjusted expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76844—Bottomless liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation

Definitions

  • the present invention relates to formation of one or more barrier layers and, more particularly to one or more barrier layers formed using chemisorption techniques.
  • barrier layers are often used to inhibit diffusion of one or more materials in metal layers, as well as other impurities from intermediate dielectric layers, into elements underlying such barrier layers, such as transistor gates, capacitor dielectrics, transistor wells, transistor channels, electrical barrier regions, interconnects, among other known elements of integrated circuits.
  • barrier layer may limit to prevent migration of unwanted materials into such elements, its introduction creates an interface at least in part between itself and one or more metal layers.
  • microscopic reaction at an interface between metal and barrier layers can cause degradation of integrated circuits, including but not limited to increased electrical resistance of such metal layers.
  • barrier layers have become a component for improving reliability of interconnect metallization schemes, it is desirable to mitigate “side effects” caused by introduction of such barrier layers.
  • refractory metals such as, for example, nitrides, borides, and carbides are targets as diffusion barriers because of their chemical inertness and low resistivities (e.g., sheet resistivities typically less than about 200 ⁇ -cm).
  • borides such as, including but not limited to titanium diboride (TiB 2 ), have been used as a barrier material owing to their low sheet resistivities (e.g., resistivities less than about 150 ⁇ -cm).
  • Boride barrier layers are conventionally formed using chemical vapor deposition (CVD) techniques. For example, titanium tetrachloride (TiCl 4 ) may be reacted with diborane (B 2 H 6 ) to form titanium diboride (TiB 2 ) using CVD.
  • CVD chemical vapor deposition
  • TiCl 4 titanium tetrachloride
  • B 2 H 6 diborane
  • TiB 2 titanium diboride
  • Cl-based chemistries when Cl-based chemistries are used to form boride barrier layers, reliability problems can occur.
  • boride layers formed using CVD chlorine-based chemistries typically have a relatively high chlorine (Cl) content, namely, chlorine content greater than about 3%.
  • a high chlorine content is undesirable because migrating chlorine from a boride barrier layer into adjacent interconnection layer may increase contact resistance of such interconnection layer and potentially change one or more characteristics of integrated circuits made therewith.
  • barrier layers for integrated circuit fabrication with little to no side effects owing to their introduction.
  • Particularly desirable would be a barrier layer useful for interconnect structures.
  • An aspect of the present invention is film deposition for integrated circuit fabrication. More particularly, at least one element from a first precursor and at least one element from a second precursor is chemisorbed on a surface. The at least one element from the first precursor and the at least one element from the second precursor are chemisorbed to provide a tantalum-nitride film. This sequence may be repeated to increase tantalum-nitride layer thickness. This type of deposition process is sometimes called atomic layer deposition (ALD). Such a tantalum-nitride layer may be used as a barrier layer.
  • ALD atomic layer deposition
  • Another aspect is forming the tantalum-nitride layer using in part annealing of at least one tantalum-nitride sublayer. This annealing may be done with a plasma.
  • the plasma source gas may be used to provide a plasma, which may be sequentially reacted or co-reacted with a tantalum containing precursor.
  • FIGS. 1 and 4 depict schematic illustrations of exemplary portions of process systems in accordance with one or more integrated circuit fabrication aspects of the present invention
  • FIGS. 2 a - 2 c depict cross-sectional views of a substrate structure at different stages of integrated circuit fabrication
  • FIGS. 3 a - 3 c depict cross-sectional views of a substrate at different stages of chemisorption to form a barrier layer
  • FIG. 5 depicts a cross-sectional view of a substrate structure at different stages of integrated circuit fabrication incorporating one or more tantalum-nitride barrier sublayers post plasma anneal.
  • FIG. 1 depicts a schematic illustration of a wafer processing system 10 that can be used to form one or more tantalum-nitride barrier layers in accordance with aspects of the present invention described herein.
  • System 10 comprises process chamber 100 , gas panel 130 , control unit 110 , along with other hardware components such as power supply 106 and vacuum pump 102 .
  • process chamber 100 For purposes of clarity, salient features of process chamber 100 are briefly described below.
  • Process chamber 100 generally houses a support pedestal 150 , which is used to support a substrate such as a semiconductor wafer 190 within process chamber 100 .
  • semiconductor wafer 190 can be heated to some desired temperature or within some desired temperature range prior to layer formation using heater 170 .
  • wafer support pedestal 150 is heated by an embedded heating element 170 .
  • pedestal 150 may be resistively heated by applying an electric current from an AC power supply 106 to heating element 170 .
  • Wafer 190 is, in turn, heated by pedestal 150 , and may be maintained within a desired process temperature range of, for example, about 20° C. to about 500° C.
  • Temperature sensor 172 such as a thermocouple, may be embedded in wafer support pedestal 150 to monitor the pedestal temperature of 150 in a conventional manner. For example, measured temperature may be used in a feedback loop to control electric current applied to heating element 170 from power supply 106 , such that wafer temperature can be maintained or controlled at a desired temperature or within a desired temperature range suitable for a process application. Pedestal 150 may optionally be heated using radiant heat (not shown).
  • Vacuum pump 102 is used to evacuate process gases from process chamber 100 and to help maintain a desired pressure or desired pressure within a pressure range inside chamber 100 .
  • Orifice 120 through a wall of chamber 100 is used to introduce process gases into process chamber 100 . Sizing of orifice 120 conventionally depends on the size of process chamber 100 .
  • Orifice 120 is coupled to gas panel 130 in part by valve 125 .
  • Gas panel 130 is configured to receive and then provide a resultant process gas from two or more gas sources 135 , 136 to process chamber 100 through orifice 120 and valve 125 .
  • Gas sources 135 , 136 may store precursors in a liquid phase at room temperature, which are later heated when in gas panel 130 to convert them to a vapor-gas phase for introduction into chamber 100 .
  • Gas panel 130 is further configured to receive and then provide a purge gas from purge gas source 138 to process chamber 100 through orifice 120 and valve 125 .
  • Control unit 110 such as a programmed personal computer, work station computer, and the like, is configured to control flow of various process gases through gas panel 130 as well as valve 125 during different stages of a wafer process sequence.
  • control unit 110 comprises central processing unit (CPU) 112 , support circuitry 114 , and memory 116 containing associated control software 113 .
  • control unit 110 may be configured to be responsible for automated control of other activities used in wafer processing—such as wafer transport, temperature control, chamber evacuation, among other activities, some of which are described elsewhere herein.
  • Control unit 110 may be one of any form of general purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors.
  • CPU 112 may use any suitable memory 116 , such as random access memory, read only memory, floppy disk drive, hard disk, or any other form of digital storage, local or remote.
  • Various support circuits may be coupled to CPU 112 for supporting system 10 .
  • Software routines 113 as required may be stored in memory 116 or executed by a second computer processor that is remotely located (not shown). Bi-directional communications between control unit 110 and various other components of wafer processing system 10 are handled through numerous signal cables collectively referred to as signal buses 118 , some of which are illustrated in FIG. 1 .
  • FIGS. 2 a - 2 c illustrate exemplary embodiment portions of tantalum-nitride layer formation for integrated circuit fabrication of an interconnect structure in accordance with one or more aspects of the present invention.
  • substrate 200 refers to any workpiece upon which film processing is performed, and substrate structure 250 is used to denote substrate 200 as well as other material layers formed on substrate 200 .
  • substrate 200 may be a silicon semiconductor wafer, or other material layer, which has been formed on wafer 190 (shown in FIG. 1 ).
  • FIG. 2 a shows a cross-sectional view of a substrate structure 250 , having a dielectric layer 202 thereon.
  • Dielectric layer 202 may be an oxide, a silicon oxide, carbon-silicon-oxide, a fluoro-silicon, a porous dielectric, or other suitable dielectric formed and patterned to provide contact hole or via 202 H extending to an exposed surface portion 202 T of substrate 200 . More particularly, it will be understood by those with skill in the art that the present invention may be used in a dual damascene process flow.
  • FIG. 2 b illustratively shows tantalum-nitride layer 204 formed on substrate structure 250 .
  • Tantalum-nitride layer 204 is formed by chemisorbing monolayers of a tantalum containing compound and a nitrogen containing compound on substrate structure 250 .
  • a portion of layer 204 may be removed by etching in a well-known manner to expose a portion 202 C of substrate 200 .
  • Portion 202 C may be part of a transistor gate stack, a capacitor plate, a node, a conductor, or like conductive element.
  • contact layer 206 may be formed thereon, for example, to form an interconnect structure.
  • Contact layer 206 may be selected from a group of aluminum (Al), copper (Cu), tungsten (W), and combinations thereof.
  • Contact layer 206 may be formed, for example, using chemical vapor deposition (CVD), physical vapor deposition (PVD), electroplating, or a combination thereof.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • electroplating or a combination thereof.
  • an aluminum (Al) layer may be deposited from a reaction of a gas mixture containing dimethyl aluminum hydride (DMAH) and hydrogen (H 2 ) or argon (Ar) or other DMAH containing mixtures
  • a CVD copper layer may be deposited from a gas mixture containing Cu +2 (hfac) 2 (copper hexafluoro acetylacetonate), Cu +2 (fod) 2 (copper heptafluoro dimethyl octanediene), Cu +1 hfac TMVS (copper hexafluoro acetylacetonate trimethylvinylsilane), or combinations thereof
  • layer 206 may be a refractory metal compound including but not limited to titanium (Ti), tungsten (W), tantalum (Ta), zirconium (Zr), hafnium (Hf), molybdenum (Mo), niobium (Nb), vanadium (V), and chromium (Cr), among others.
  • a refactory metal is combined with reactive species, such as for example chlorine (Cl) or fluorine (F), and is provided with another gas to form a refractory metal compound.
  • TiCl 4 titanium tetrachloride
  • WF 6 tantalum pentachloride
  • ZrCl 4 zirconium tetrachloride
  • HfCl 4 hafnium tetrachloride
  • MoCl 5 molybdenum pentachloride
  • layer 206 is shown as formed on layer 204 , it should be understood that layer 204 may be used in combination with one or more other barrier layers formed by CVD or PVD. Accordingly, layer 204 need not be in direct contact with layer 206 , but an intervening layer may exist between layer 206 and layer 204 .
  • Monolayers are chemisorbed by sequentially providing a tantalum containing compound and a nitrogen containing compound to a process chamber. Monolayers of a tantalum containing compound and a nitrogen containing compound are alternately chemisorbed on a substrate 300 as illustratively shown in FIGS. 3 a - 3 c.
  • FIG. 3 a depicts a cross-sectional view of an exemplary portion of substrate 300 in a stage of integrated circuit fabrication, and more particularly at a stage of barrier layer formation.
  • Tantalum layer 305 is formed by chemisorbing a tantalum-containing compound on surface portion 300 T of substrate 300 by introducing a pulse of a tantalum containing gas 135 (shown in FIG. 1 ) into process chamber 100 (shown in FIG. 1 ).
  • Tantalum containing gas 135 (shown in FIG. 1 ) may be a tantalum based organo-metallic precursor or a derivative thereof.
  • Such precursors include but are not limited to pentaethylmethylamino-tantalum (PEMAT; Ta[N(C 2 H 5 CH 3 ) 2 ] 4 ), pentadiethylamino-tantalum (PDEAT), pentadimethylamino-tantalum (PDMAT), and any and all of derivatives of PEMAT, PDEAT, or PDMAT.
  • PEMAT pentaethylmethylamino-tantalum
  • PDEAT pentadiethylamino-tantalum
  • PDMAT pentadimethylamino-tantalum
  • any and all of derivatives of PEMAT, PDEAT, or PDMAT any and all of derivatives of PEMAT, PDEAT, or PDMAT.
  • tantalum containing precursors include without limitation Ta(NMe 2 ) 5 , Ta(NEt 2 ) 5 , TBTDET (Ta(NEt 2 ) 3 or C 16 H 39 N 4 Ta), tantalum halides for example TaX 5 where X is florine (F), bromine (Br) or chlorine (Cl), and derivatives thereof.
  • Wafer 190 is maintained approximately below a thermal decomposition temperature of a selected tantalum precursor or a derivative thereof to be used and maintained at a pressure of approximately less than 100 Torr. Additionally, wafer 190 may be heated by heating element 170 .
  • An exemplary temperature range for precursors identified herein is approximately 20 to 400 degrees Celsius (° C.). For example, approximately 150 to 300° C. may be used for PEMAT.
  • temperatures below a thermal decomposition temperature may be used, it should be understood that other temperatures, namely those above a thermal decomposition temperature, may be used.
  • An example temperature ranges above a thermal decomposition temperature is approximately 400 to 600° C. Accordingly, some thermal decomposition may occur; however, the main, more than 50 percent, deposition activity is by chemisorption. More generally, wafer surface temperature needs to be high enough to induce significant chemisorption of precursors instead of physisorption, but low enough to prevent significant decomposition of precursors.
  • the primary growth mode will be ALD. Accordingly, such a film will tend to have ALD properties.
  • this tantalum-containing precursor combines tantalum atoms with one or more reactive species.
  • these reactive species form byproducts that are transported from process chamber 100 by vacuum system 102 while leaving tantalum deposited on surface portion 300 T.
  • a precursor may be in an intermediate state when on a surface of wafer 190 .
  • each layer may contain more than simply elements of tantalum (Ta) or nitrogen (N); rather, the existence of more complex molecules having carbon (C), hydrogen (H), and/or oxygen (O) is probable.
  • a surface may saturate after exposure to a precursor forming a layer having more or less than a monolayer of either tantalum (Ta) or nitrogen (N).
  • Ta tantalum
  • N nitrogen
  • This composition or structure will depend on available free energy on a surface of wafer 190 , as well as atoms or molecules involved. Once all available sites are occupied by tantalum atoms, further chemisorption of tantalum is blocked, and thus the reaction is self-limiting.
  • a tantalum containing compound is chemisorbed onto substrate 300 .
  • excess tantalum containing compound is removed from process chamber 10 by vacuum system 102 (shown in FIG. 1 ). Additionally, a pulse of purge gas 138 (shown in FIG. 1 ) may be supplied to process chamber 10 to facilitate removal of excess tantalum containing compound.
  • suitable purge gases include but are not limited to helium (He), nitrogen (N 2 ), argon (Ar), and hydrogen (H 2 ), among others, and combinations thereof that may be used.
  • a pulse of ammonia gas (NH 3 ) 136 is introduced into process chamber 100 .
  • Process chamber 100 and wafer 190 may be maintained at approximately the same temperature and pressure range as used for formation of layer 305 .
  • a layer 307 of nitrogen is illustratively shown as chemisorbed on tantalum layer 305 at least in part in response to introduction of ammonia gas 136 . While not wishing to be bound by theory, it is believed that nitrogen layer 307 is formed in a similar self-limiting manner as was tantalum layer 305 .
  • Each tantalum layer 305 and nitrogen layer 307 in any combination and in direct contact with one another form a sublayer 309 , whether or not either or both or neither is a monolayer.
  • N containing precursors gases may be used including but not limited to N x H y for x and y integers (e.g., N 2 H 4 ), N 2 plasma source, NH 2 N(CH 3 ) 2 , among others.
  • Tantalum-nitride layer 204 may, for example, have a thickness in a range of approximately 0.0002 microns (2 ⁇ ) to about 0.05 microns (500 ⁇ ), though a thickness of approximately 0.001 microns (10 ⁇ ) to about 0.005 microns (50 ⁇ ) may be a sufficient barrier.
  • a tantalum-nitride layer 204 may be used as a thin film insulator or dielectric, or may be used as a protective layer for example to prevent corrosion owing to layer 204 being relatively inert or non-reactive.
  • layer 204 may be used to coat any of a variety of geometries.
  • tantalum-nitride layer 204 formation is depicted as starting with chemisorption of a tantalum containing compound on substrate 300 followed by chemisorption of a nitrogen containing compound.
  • chemisorption may begin with a layer of a nitrogen containing compound on substrate 300 followed by a layer of a tantalum containing compound.
  • Pulse time for each pulse of a tantalum containing compound, a nitrogen containing compound, and a purge gas is variable and depends on volume capacity of a deposition chamber 100 employed as well as vacuum system 102 coupled thereto. Similarly, time between each pulse is also variable and depends on volume capacity of process chamber 100 as well as vacuum system 102 coupled thereto. However, in general, wafer 190 surface must be saturated by the end of a pulse time, where pulse time is defined as time a surface is exposed to a precursor.
  • precursor gases should not mix at or near the wafer surface to prevent co-reaction (a co-reactive embodiment is disclosed elsewhere herein), and thus at least one gas purge or pump evacuation between precursor pulses should be used to prevent mixing.
  • a pulse time of less than about 1 second for a tantalum containing compound and a pulse time of less than about 1 second for a nitrogen containing compound is typically sufficient to chemisorb alternating monolayers that comprise tantalum-nitride layer 204 on substrate 300 .
  • a pulse time of less than about 1 second for purge gas 138 is typically sufficient to remove reaction byproducts as well as any residual materials remaining in process chamber 100 .
  • Sequential deposition as described advantageously provides good step coverage and conformality, due to using a chemisorption mechanism for forming tantalum-nitride layer 204 .
  • each of uniformity and step coverage is approximately 100 percent.
  • precision controlled thickness of tantalum-nitride layer 204 may be achieved down to a single layer of atoms.
  • deposition area is largely independent of the amount of precursor gas remaining in a reaction chamber once a layer has been formed.
  • cycle it is meant a sequence of pulse gases, including precursor and purge gases, and optionally one or more pump evacuations. Also, by using ALD, gas-phase reactions between precursors is minimized to reduce generation of unwanted particles.
  • pulses of gases 135 and 136 are both applied to chamber 100 at the same time.
  • gases 135 and 136 namely, tantalum and nitrogen containing compounds
  • An example is PEMAT and NH 3 , though other tantalum-organic and nitrogen precursors may be used. Step coverage and conformality is good at approximately 95 to 100 percent for each.
  • deposition rate is approximately 0.001 to 0.1 microns per second. Because a co-reaction is used, purging between sequential pulses of alternating precursors is avoided, as is done in ALD.
  • Wafer surface temperature is maintained high enough to sustain reaction between two precursors. This temperature may be below chemisorption temperature of one or both precursors. Accordingly, temperature should be high enough for sufficient diffusion of molecules or atoms.
  • Wafer surface temperature is maintained low enough to avoid significant decomposition of precursors. However, more decomposition of precursors may be acceptable for co-reaction than for sequentially reacting precursors in an ALD process.
  • wafer 190 surface diffusion rate of molecules or atoms should be greater than precursors' reaction rate which should be greater precursors' decomposition rate.
  • substrate structure 250 may be plasma annealed.
  • FIG. 4 there is illustratively shown a schematic diagram of an exemplary portion of a process system 10 P in accordance with an aspect of the present invention.
  • Process system 10 P is similar to process system 10 , except for additions of one or more RF power supplies 410 and 412 , showerhead 400 , gas source 405 , and matching network(s) 411 .
  • a separate plasma process system may be used; however, by using a CVD/PVD process system 10 P, less handling of substrate structure 250 is involved, as layer 204 may be formed and annealed in a same chamber 100 .
  • showerhead 400 and wafer support pedestal 150 provide in part spaced apart electrodes. An electric field may be generated between these electrodes to ignite a process gas introduced into chamber 100 to provide a plasma 415 .
  • argon is introduced into chamber 100 from gas source 405 to provide an argon plasma.
  • gas source 405 may be omitted for gas source 138 .
  • pedestal 150 is coupled to a source of radio frequency (RF) power source 412 through a matching network 411 , which in turn may be coupled to control unit 110 .
  • RF power source 410 may be coupled to showerhead 400 and matching network 411 , which in turn may be coupled to control unit 110 .
  • matching network 411 may comprise different circuits for RF power sources 410 and 412 , and both RF power sources 410 and 412 may be coupled to showerhead 400 and pedestal 150 , respectively.
  • substrate structure 250 having one or more iterations or tantalum-nitride sublayers 309 is located in process chamber 401 .
  • Argon (Ar) gas from gas source 405 is introduced into chamber 401 to plasma anneal substrate structure 250 .
  • plasma annealing reduces nitrogen content of one or more sublayers 309 by sputtering off nitrogen, which in turn reduces resistivity.
  • plasma annealing is believed to make tantalum-nitride layer 204 more tantalum-rich as compared to a non-plasma annealed tantalum-nitride layer 204 .
  • a 1:1 Ta:N film may be annealed to a 2:1 Ta:N film.
  • Tantalum-nitride films having a sheet resistance of approximately equal to or less than 1200 micro-ohms-cm for 0.004 micron (40 Angstrom) films may be achieved.
  • non-chemically reactive gases with respect to layer 204 may be used for physically displacing nitrogen from layer 204 , including but not limited to neon (Ne), xenon (Xe), helium (He), and hydrogen (H 2 ).
  • Ne neon
  • Xe xenon
  • He helium
  • H 2 hydrogen
  • a plasma-gas that does not chemically react with a tantalum-nitride film it is desirable to have a plasma-gas atom or molecule with an atomic-mass closer to N than to Ta in order to have preferential sputtering of the N.
  • a chemically reactive process may be used where a gas is selected which preferentially reacts for removal of N while leaving Ta.
  • Plasma annealing may be done after formation of each nitrogen layer 307 , or may be done after formation of a plurality of layers 307 . With respect to the latter, plasma annealing may take place after approximately every 0.003 to 0.005 microns (30 to 50 Angstroms) of layer 204 or after formation of approximately every 7 to 10 sublayers 309 . However, plasma annealing may be done after formation of a sublayer 309 , which is approximately 0.0001 to 0.0004 microns (1 to 4 Angstroms).
  • Plasma annealing with argon may be done with a wafer temperature in a range of approximately 20 to 450 degrees Celsius and a chamber pressure of approximately 0.1 to 50 Torr with a flow rate of argon in a range of approximately 10 to 2000 standard cubic centimeters per minute (sccm) with a plasma treatment time approximately equal to or greater than one second.
  • a tantalum-nitride film should be annealed at a temperature, which does not melt, sublime, or decompose such a tantalum-nitride film.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method of forming a tantalum-nitride layer (204) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing precursor are provided to a chamber (100) to form layers (305, 307) of tantalum and nitrogen. The nitrogen precursor may be a plasma gas source. The resultant tantalum-nitride layer (204) may be used, for example, as a barrier layer. As barrier layers may be used with metal interconnect structures (206), at least one plasma anneal on the tantalum-nitride layer may be performed to reduce its resistivity and to improve film property.

Description

BACKGROUND OF THE DISCLOSURE
1. Field of the Invention
The present invention relates to formation of one or more barrier layers and, more particularly to one or more barrier layers formed using chemisorption techniques.
2. Description of the Background Art
In manufacturing integrated circuits, one or more barrier layers are often used to inhibit diffusion of one or more materials in metal layers, as well as other impurities from intermediate dielectric layers, into elements underlying such barrier layers, such as transistor gates, capacitor dielectrics, transistor wells, transistor channels, electrical barrier regions, interconnects, among other known elements of integrated circuits.
Though a barrier layer may limit to prevent migration of unwanted materials into such elements, its introduction creates an interface at least in part between itself and one or more metal layers. For sub half-micron (0.5 μm) semiconductor devices, microscopic reaction at an interface between metal and barrier layers can cause degradation of integrated circuits, including but not limited to increased electrical resistance of such metal layers. Accordingly, though barrier layers have become a component for improving reliability of interconnect metallization schemes, it is desirable to mitigate “side effects” caused by introduction of such barrier layers.
Compounds of refractory metals such as, for example, nitrides, borides, and carbides are targets as diffusion barriers because of their chemical inertness and low resistivities (e.g., sheet resistivities typically less than about 200 μΩ-cm). In particular, borides such as, including but not limited to titanium diboride (TiB2), have been used as a barrier material owing to their low sheet resistivities (e.g., resistivities less than about 150 μΩ-cm).
Boride barrier layers are conventionally formed using chemical vapor deposition (CVD) techniques. For example, titanium tetrachloride (TiCl4) may be reacted with diborane (B2H6) to form titanium diboride (TiB2) using CVD. However, when Cl-based chemistries are used to form boride barrier layers, reliability problems can occur. In particular, boride layers formed using CVD chlorine-based chemistries typically have a relatively high chlorine (Cl) content, namely, chlorine content greater than about 3%. A high chlorine content is undesirable because migrating chlorine from a boride barrier layer into adjacent interconnection layer may increase contact resistance of such interconnection layer and potentially change one or more characteristics of integrated circuits made therewith.
Therefore, a need exists for barrier layers for integrated circuit fabrication with little to no side effects owing to their introduction. Particularly desirable would be a barrier layer useful for interconnect structures.
SUMMARY OF THE INVENTION
An aspect of the present invention is film deposition for integrated circuit fabrication. More particularly, at least one element from a first precursor and at least one element from a second precursor is chemisorbed on a surface. The at least one element from the first precursor and the at least one element from the second precursor are chemisorbed to provide a tantalum-nitride film. This sequence may be repeated to increase tantalum-nitride layer thickness. This type of deposition process is sometimes called atomic layer deposition (ALD). Such a tantalum-nitride layer may be used as a barrier layer.
Another aspect is forming the tantalum-nitride layer using in part annealing of at least one tantalum-nitride sublayer. This annealing may be done with a plasma.
Another aspect is using a plasma source gas as a nitrogen precursor. The plasma source gas may be used to provide a plasma, which may be sequentially reacted or co-reacted with a tantalum containing precursor.
These and other aspects of the present invention will be more apparent from the following description.
BRIEF DESCRIPTION OF THE DRAWINGS
The teachings of the present invention can be readily understood by considering the following detailed description in conjunction with the accompanying drawings, in which:
FIGS. 1 and 4 depict schematic illustrations of exemplary portions of process systems in accordance with one or more integrated circuit fabrication aspects of the present invention;
FIGS. 2 a-2 c depict cross-sectional views of a substrate structure at different stages of integrated circuit fabrication;
FIGS. 3 a-3 c depict cross-sectional views of a substrate at different stages of chemisorption to form a barrier layer; and
FIG. 5 depicts a cross-sectional view of a substrate structure at different stages of integrated circuit fabrication incorporating one or more tantalum-nitride barrier sublayers post plasma anneal.
 DETAILED DESCRIPTION
FIG. 1 depicts a schematic illustration of a wafer processing system 10 that can be used to form one or more tantalum-nitride barrier layers in accordance with aspects of the present invention described herein. System 10 comprises process chamber 100, gas panel 130, control unit 110, along with other hardware components such as power supply 106 and vacuum pump 102. For purposes of clarity, salient features of process chamber 100 are briefly described below.
Process Chamber
Process chamber 100 generally houses a support pedestal 150, which is used to support a substrate such as a semiconductor wafer 190 within process chamber 100. Depending on process requirements, semiconductor wafer 190 can be heated to some desired temperature or within some desired temperature range prior to layer formation using heater 170.
In chamber 100, wafer support pedestal 150 is heated by an embedded heating element 170. For example, pedestal 150 may be resistively heated by applying an electric current from an AC power supply 106 to heating element 170. Wafer 190 is, in turn, heated by pedestal 150, and may be maintained within a desired process temperature range of, for example, about 20° C. to about 500° C.
Temperature sensor 172, such as a thermocouple, may be embedded in wafer support pedestal 150 to monitor the pedestal temperature of 150 in a conventional manner. For example, measured temperature may be used in a feedback loop to control electric current applied to heating element 170 from power supply 106, such that wafer temperature can be maintained or controlled at a desired temperature or within a desired temperature range suitable for a process application. Pedestal 150 may optionally be heated using radiant heat (not shown).
Vacuum pump 102 is used to evacuate process gases from process chamber 100 and to help maintain a desired pressure or desired pressure within a pressure range inside chamber 100. Orifice 120 through a wall of chamber 100 is used to introduce process gases into process chamber 100. Sizing of orifice 120 conventionally depends on the size of process chamber 100.
Orifice 120 is coupled to gas panel 130 in part by valve 125. Gas panel 130 is configured to receive and then provide a resultant process gas from two or more gas sources 135, 136 to process chamber 100 through orifice 120 and valve 125. Gas sources 135, 136 may store precursors in a liquid phase at room temperature, which are later heated when in gas panel 130 to convert them to a vapor-gas phase for introduction into chamber 100. Gas panel 130 is further configured to receive and then provide a purge gas from purge gas source 138 to process chamber 100 through orifice 120 and valve 125.
Control unit 110, such as a programmed personal computer, work station computer, and the like, is configured to control flow of various process gases through gas panel 130 as well as valve 125 during different stages of a wafer process sequence. Illustratively, control unit 110 comprises central processing unit (CPU) 112, support circuitry 114, and memory 116 containing associated control software 113. In addition to control of process gases through gas panel 130, control unit 110 may be configured to be responsible for automated control of other activities used in wafer processing—such as wafer transport, temperature control, chamber evacuation, among other activities, some of which are described elsewhere herein.
Control unit 110 may be one of any form of general purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. CPU 112 may use any suitable memory 116, such as random access memory, read only memory, floppy disk drive, hard disk, or any other form of digital storage, local or remote. Various support circuits may be coupled to CPU 112 for supporting system 10. Software routines 113 as required may be stored in memory 116 or executed by a second computer processor that is remotely located (not shown). Bi-directional communications between control unit 110 and various other components of wafer processing system 10 are handled through numerous signal cables collectively referred to as signal buses 118, some of which are illustrated in FIG. 1.
Barrier Layer Formation
FIGS. 2 a-2 c illustrate exemplary embodiment portions of tantalum-nitride layer formation for integrated circuit fabrication of an interconnect structure in accordance with one or more aspects of the present invention. For purposes of clarity, substrate 200 refers to any workpiece upon which film processing is performed, and substrate structure 250 is used to denote substrate 200 as well as other material layers formed on substrate 200. Depending on processing stage, substrate 200 may be a silicon semiconductor wafer, or other material layer, which has been formed on wafer 190 (shown in FIG. 1).
FIG. 2 a, for example, shows a cross-sectional view of a substrate structure 250, having a dielectric layer 202 thereon. Dielectric layer 202 may be an oxide, a silicon oxide, carbon-silicon-oxide, a fluoro-silicon, a porous dielectric, or other suitable dielectric formed and patterned to provide contact hole or via 202H extending to an exposed surface portion 202T of substrate 200. More particularly, it will be understood by those with skill in the art that the present invention may be used in a dual damascene process flow.
FIG. 2 b illustratively shows tantalum-nitride layer 204 formed on substrate structure 250. Tantalum-nitride layer 204 is formed by chemisorbing monolayers of a tantalum containing compound and a nitrogen containing compound on substrate structure 250.
Referring to FIG. 2 c, after the formation of tantalum-nitride layer 204, a portion of layer 204 may be removed by etching in a well-known manner to expose a portion 202C of substrate 200. Portion 202C may be part of a transistor gate stack, a capacitor plate, a node, a conductor, or like conductive element. Next, contact layer 206 may be formed thereon, for example, to form an interconnect structure. Contact layer 206 may be selected from a group of aluminum (Al), copper (Cu), tungsten (W), and combinations thereof.
Contact layer 206 may be formed, for example, using chemical vapor deposition (CVD), physical vapor deposition (PVD), electroplating, or a combination thereof. For example, an aluminum (Al) layer may be deposited from a reaction of a gas mixture containing dimethyl aluminum hydride (DMAH) and hydrogen (H2) or argon (Ar) or other DMAH containing mixtures, a CVD copper layer may be deposited from a gas mixture containing Cu+2(hfac)2 (copper hexafluoro acetylacetonate), Cu+2 (fod)2 (copper heptafluoro dimethyl octanediene), Cu+1hfac TMVS (copper hexafluoro acetylacetonate trimethylvinylsilane), or combinations thereof, and a CVD tungsten layer may be deposited from a gas mixture containing tungsten hexafluoride (WF6). A PVD layer is deposited from a copper target, an aluminum target, or a tungsten target.
Moreover, layer 206 may be a refractory metal compound including but not limited to titanium (Ti), tungsten (W), tantalum (Ta), zirconium (Zr), hafnium (Hf), molybdenum (Mo), niobium (Nb), vanadium (V), and chromium (Cr), among others. Conventionally, a refactory metal is combined with reactive species, such as for example chlorine (Cl) or fluorine (F), and is provided with another gas to form a refractory metal compound. For example, titanium tetrachloride (TiCl4), tungsten hexafluoride (WF6), tantalum pentachloride (TaCl5), zirconium tetrachloride (ZrCl4), hafnium tetrachloride (HfCl4), molybdenum pentachloride (MoCl5), niobium pentachloride (NbCl5), vanadium pentachloride (VCl5), or chromium tetrachloride (CrCl4) may be used as a refractory metal-containing compound gas.
Though layer 206 is shown as formed on layer 204, it should be understood that layer 204 may be used in combination with one or more other barrier layers formed by CVD or PVD. Accordingly, layer 204 need not be in direct contact with layer 206, but an intervening layer may exist between layer 206 and layer 204.
Monolayers are chemisorbed by sequentially providing a tantalum containing compound and a nitrogen containing compound to a process chamber. Monolayers of a tantalum containing compound and a nitrogen containing compound are alternately chemisorbed on a substrate 300 as illustratively shown in FIGS. 3 a-3 c.
FIG. 3 a depicts a cross-sectional view of an exemplary portion of substrate 300 in a stage of integrated circuit fabrication, and more particularly at a stage of barrier layer formation. Tantalum layer 305 is formed by chemisorbing a tantalum-containing compound on surface portion 300T of substrate 300 by introducing a pulse of a tantalum containing gas 135 (shown in FIG. 1) into process chamber 100 (shown in FIG. 1). Tantalum containing gas 135 (shown in FIG. 1) may be a tantalum based organo-metallic precursor or a derivative thereof. Examples of such precursors include but are not limited to pentaethylmethylamino-tantalum (PEMAT; Ta[N(C2H5CH3)2]4), pentadiethylamino-tantalum (PDEAT), pentadimethylamino-tantalum (PDMAT), and any and all of derivatives of PEMAT, PDEAT, or PDMAT. Other tantalum containing precursors include without limitation Ta(NMe2)5, Ta(NEt2)5, TBTDET (Ta(NEt2)3 or C16H39N4Ta), tantalum halides for example TaX5 where X is florine (F), bromine (Br) or chlorine (Cl), and derivatives thereof.
Wafer 190 is maintained approximately below a thermal decomposition temperature of a selected tantalum precursor or a derivative thereof to be used and maintained at a pressure of approximately less than 100 Torr. Additionally, wafer 190 may be heated by heating element 170. An exemplary temperature range for precursors identified herein is approximately 20 to 400 degrees Celsius (° C.). For example, approximately 150 to 300° C. may be used for PEMAT.
Though temperatures below a thermal decomposition temperature may be used, it should be understood that other temperatures, namely those above a thermal decomposition temperature, may be used. An example temperature ranges above a thermal decomposition temperature is approximately 400 to 600° C. Accordingly, some thermal decomposition may occur; however, the main, more than 50 percent, deposition activity is by chemisorption. More generally, wafer surface temperature needs to be high enough to induce significant chemisorption of precursors instead of physisorption, but low enough to prevent significant decomposition of precursors. If the amount of decomposition during each precursor deposition is significantly less than a layer, then the primary growth mode will be ALD. Accordingly, such a film will tend to have ALD properties. However, it is possible if a precursor significantly decomposes, but an intermediate reactant is obtained preventing further precursor decomposition after a layer of intermediate reactant is deposited, then an ALD growth mode may still be obtained.
While not wishing to be bound by theory, it is believed that this tantalum-containing precursor combines tantalum atoms with one or more reactive species. During tantalum layer 305 formation, these reactive species form byproducts that are transported from process chamber 100 by vacuum system 102 while leaving tantalum deposited on surface portion 300T. However, composition and structure of precursors on a surface during atomic-layer deposition (ALD) is not precisely known. A precursor may be in an intermediate state when on a surface of wafer 190. For example, each layer may contain more than simply elements of tantalum (Ta) or nitrogen (N); rather, the existence of more complex molecules having carbon (C), hydrogen (H), and/or oxygen (O) is probable. Additionally, a surface may saturate after exposure to a precursor forming a layer having more or less than a monolayer of either tantalum (Ta) or nitrogen (N). This composition or structure will depend on available free energy on a surface of wafer 190, as well as atoms or molecules involved. Once all available sites are occupied by tantalum atoms, further chemisorption of tantalum is blocked, and thus the reaction is self-limiting.
After layer 305 of a tantalum containing compound is chemisorbed onto substrate 300, excess tantalum containing compound is removed from process chamber 10 by vacuum system 102 (shown in FIG. 1). Additionally, a pulse of purge gas 138 (shown in FIG. 1) may be supplied to process chamber 10 to facilitate removal of excess tantalum containing compound. Examples of suitable purge gases include but are not limited to helium (He), nitrogen (N2), argon (Ar), and hydrogen (H2), among others, and combinations thereof that may be used.
With continuing reference to FIGS. 3 a-c and renewed reference to FIG. 1, after process chamber 100 has been purged, a pulse of ammonia gas (NH3) 136 is introduced into process chamber 100. Process chamber 100 and wafer 190 may be maintained at approximately the same temperature and pressure range as used for formation of layer 305.
In FIG. 3 b, a layer 307 of nitrogen is illustratively shown as chemisorbed on tantalum layer 305 at least in part in response to introduction of ammonia gas 136. While not wishing to be bound by theory, it is believed that nitrogen layer 307 is formed in a similar self-limiting manner as was tantalum layer 305. Each tantalum layer 305 and nitrogen layer 307 in any combination and in direct contact with one another form a sublayer 309, whether or not either or both or neither is a monolayer. Though ammonia gas is used, other N containing precursors gases may be used including but not limited to NxHy for x and y integers (e.g., N2H4), N2 plasma source, NH2N(CH3)2, among others.
After an ammonia gas compound is chemisorbed onto tantalum layer 305 on substrate 300 to form nitrogen monolayer 307, excess ammonia gas compound is removed from process chamber 10 by vacuum system 102, and additionally, a pulse of purge gas 138 may be supplied to process chamber 10 to facilitate this removal.
Thereafter, as shown in FIG. 3 c, tantalum and nitrogen layer deposition in an alternating sequence may be repeated with interspersed purges until a desired layer 204 thickness is achieved. Tantalum-nitride layer 204 may, for example, have a thickness in a range of approximately 0.0002 microns (2 Å) to about 0.05 microns (500 Å), though a thickness of approximately 0.001 microns (10 Å) to about 0.005 microns (50 Å) may be a sufficient barrier. Moreover, a tantalum-nitride layer 204 may be used as a thin film insulator or dielectric, or may be used as a protective layer for example to prevent corrosion owing to layer 204 being relatively inert or non-reactive. Advantageously, layer 204 may be used to coat any of a variety of geometries.
In FIGS. 3 a-3 c, tantalum-nitride layer 204 formation is depicted as starting with chemisorption of a tantalum containing compound on substrate 300 followed by chemisorption of a nitrogen containing compound. Alternatively, chemisorption may begin with a layer of a nitrogen containing compound on substrate 300 followed by a layer of a tantalum containing compound.
Pulse time for each pulse of a tantalum containing compound, a nitrogen containing compound, and a purge gas is variable and depends on volume capacity of a deposition chamber 100 employed as well as vacuum system 102 coupled thereto. Similarly, time between each pulse is also variable and depends on volume capacity of process chamber 100 as well as vacuum system 102 coupled thereto. However, in general, wafer 190 surface must be saturated by the end of a pulse time, where pulse time is defined as time a surface is exposed to a precursor. There is some variability here, for example (1) a lower chamber pressure of a precursor will require a longer pulse time; (2) a lower precursor gas flow rate will require a longer time for chamber pressure to rise and stabilize requiring a longer pulse time; and (3) a large-volume chamber will take longer to fill, longer for chamber pressure to stabilize thus requiring a longer pulse time. In general, precursor gases should not mix at or near the wafer surface to prevent co-reaction (a co-reactive embodiment is disclosed elsewhere herein), and thus at least one gas purge or pump evacuation between precursor pulses should be used to prevent mixing.
Generally, a pulse time of less than about 1 second for a tantalum containing compound and a pulse time of less than about 1 second for a nitrogen containing compound is typically sufficient to chemisorb alternating monolayers that comprise tantalum-nitride layer 204 on substrate 300. A pulse time of less than about 1 second for purge gas 138 is typically sufficient to remove reaction byproducts as well as any residual materials remaining in process chamber 100.
Sequential deposition as described advantageously provides good step coverage and conformality, due to using a chemisorption mechanism for forming tantalum-nitride layer 204. With complete or near complete saturation after each exposure of wafer 190 to a precursor, each of uniformity and step coverage is approximately 100 percent. Because atomic layer deposition is used, precision controlled thickness of tantalum-nitride layer 204 may be achieved down to a single layer of atoms. Furthermore, in ALD processes, since it is believed that only about one atomic layer may be absorbed on a topographic surface per “cycle,” deposition area is largely independent of the amount of precursor gas remaining in a reaction chamber once a layer has been formed. By “cycle,” it is meant a sequence of pulse gases, including precursor and purge gases, and optionally one or more pump evacuations. Also, by using ALD, gas-phase reactions between precursors is minimized to reduce generation of unwanted particles.
Co-Reaction
Though it has been described to alternate tantalum and nitrogen containing precursors and purging in between as applied in a sequential manner, another embodiment is to supply tantalum and nitrogen containing precursors simultaneously. Thus, pulses of gases 135 and 136, namely, tantalum and nitrogen containing compounds, are both applied to chamber 100 at the same time. An example is PEMAT and NH3, though other tantalum-organic and nitrogen precursors may be used. Step coverage and conformality is good at approximately 95 to 100 percent for each. Moreover, deposition rate is approximately 0.001 to 0.1 microns per second. Because a co-reaction is used, purging between sequential pulses of alternating precursors is avoided, as is done in ALD.
Wafer surface temperature is maintained high enough to sustain reaction between two precursors. This temperature may be below chemisorption temperature of one or both precursors. Accordingly, temperature should be high enough for sufficient diffusion of molecules or atoms.
Wafer surface temperature is maintained low enough to avoid significant decomposition of precursors. However, more decomposition of precursors may be acceptable for co-reaction than for sequentially reacting precursors in an ALD process. In general, wafer 190 surface diffusion rate of molecules or atoms should be greater than precursors' reaction rate which should be greater precursors' decomposition rate.
For all other details, the above-mentioned description for sequentially applied precursors applies to co-reaction processing.
Plasma Anneal
After forming one or more combinations of layers 305 and 307, substrate structure 250 may be plasma annealed. Referring to FIG. 4, there is illustratively shown a schematic diagram of an exemplary portion of a process system 10P in accordance with an aspect of the present invention. Process system 10P is similar to process system 10, except for additions of one or more RF power supplies 410 and 412, showerhead 400, gas source 405, and matching network(s) 411. Notably, a separate plasma process system may be used; however, by using a CVD/PVD process system 10P, less handling of substrate structure 250 is involved, as layer 204 may be formed and annealed in a same chamber 100.
Showerhead 400 and wafer support pedestal 150 provide in part spaced apart electrodes. An electric field may be generated between these electrodes to ignite a process gas introduced into chamber 100 to provide a plasma 415. In this embodiment, argon is introduced into chamber 100 from gas source 405 to provide an argon plasma. However, if argon is used as a purge gas, gas source 405 may be omitted for gas source 138.
Conventionally, pedestal 150 is coupled to a source of radio frequency (RF) power source 412 through a matching network 411, which in turn may be coupled to control unit 110. Alternatively, RF power source 410 may be coupled to showerhead 400 and matching network 411, which in turn may be coupled to control unit 110. Moreover, matching network 411 may comprise different circuits for RF power sources 410 and 412, and both RF power sources 410 and 412 may be coupled to showerhead 400 and pedestal 150, respectively.
With continuing reference to FIG. 4 and renewed reference to FIG. 3 c, substrate structure 250 having one or more iterations or tantalum-nitride sublayers 309 is located in process chamber 401. Argon (Ar) gas from gas source 405 is introduced into chamber 401 to plasma anneal substrate structure 250. While not wishing to be bound by theory, it is believed that plasma annealing reduces nitrogen content of one or more sublayers 309 by sputtering off nitrogen, which in turn reduces resistivity. In other words, plasma annealing is believed to make tantalum-nitride layer 204 more tantalum-rich as compared to a non-plasma annealed tantalum-nitride layer 204. For example, a 1:1 Ta:N film may be annealed to a 2:1 Ta:N film. Tantalum-nitride films having a sheet resistance of approximately equal to or less than 1200 micro-ohms-cm for 0.004 micron (40 Angstrom) films may be achieved.
It will be appreciated that other non-chemically reactive gases with respect to layer 204 may be used for physically displacing nitrogen from layer 204, including but not limited to neon (Ne), xenon (Xe), helium (He), and hydrogen (H2). Generally, for a plasma-gas that does not chemically react with a tantalum-nitride film, it is desirable to have a plasma-gas atom or molecule with an atomic-mass closer to N than to Ta in order to have preferential sputtering of the N. However, a chemically reactive process may be used where a gas is selected which preferentially reacts for removal of N while leaving Ta.
Referring to FIG. 5, there is illustratively shown a cross sectional view of layer 204 after plasma annealing in accordance with a portion of an exemplary embodiment of the present invention. Plasma annealing may be done after formation of each nitrogen layer 307, or may be done after formation of a plurality of layers 307. With respect to the latter, plasma annealing may take place after approximately every 0.003 to 0.005 microns (30 to 50 Angstroms) of layer 204 or after formation of approximately every 7 to 10 sublayers 309. However, plasma annealing may be done after formation of a sublayer 309, which is approximately 0.0001 to 0.0004 microns (1 to 4 Angstroms).
Plasma annealing with argon may be done with a wafer temperature in a range of approximately 20 to 450 degrees Celsius and a chamber pressure of approximately 0.1 to 50 Torr with a flow rate of argon in a range of approximately 10 to 2000 standard cubic centimeters per minute (sccm) with a plasma treatment time approximately equal to or greater than one second. Generally, a tantalum-nitride film should be annealed at a temperature, which does not melt, sublime, or decompose such a tantalum-nitride film.
The specific process conditions disclosed in the above description are meant for illustrative purposes only. Other combinations of process parameters such as precursor and inert gases, flow ranges, pressure ranges and temperature ranges may be used in forming a tantalum-nitride layer in accordance with one or more aspects of the present invention.
Although several preferred embodiments, which incorporate the teachings of the present invention, have been shown and described in detail, those skilled in the art can readily devise many other varied embodiments that still incorporate these teachings. By way of example and not limitation, it will be apparent to those skilled in the art that the above-described formation is directed at atomic layer CVD (ALCVD); however, low temperature CVD may be used as described with respect to co-reacting precursors. Accordingly, layers 305 and 307 need not be monolayers. Moreover, it will be appreciated that the above described embodiments of the present invention will be particularly useful in forming one or more barrier layers for interconnects on semiconductor devices having a wide range of applications.

Claims (25)

1. A method of film deposition for integrated circuit fabrication, comprising:
chemisorbing a first layer on a substrate, the first layer selected from a first tantalum layer and a first nitride layer;
chemisorbing a second layer on the first layer, the second layer different from the first layer, the second layer selected from a second nitride layer and a second tantalum layer;
the first layer and the second layer in combination providing a tantalum-nitride layer; and
plasma annealing the tantalum-nitride layer to remove nitrogen therefrom.
2. The method of claim 1, wherein the plasma annealing is performed with a plasma source material chemically non-reactive to the tantalum-nitride layer and having an atomic mass closer to nitrogen than tantalum.
3. The method of claim 1, wherein the plasma annealing is performed with plasma source material selected from argon (Ar), xenon (Xe), helium (He), neon (Ne), hydrogen (H2), nitrogen (N2), and combinations thereof.
4. The method of claim 1, further comprising sequentially repeating the chemisorbing of the first layer and the second layer along with interspersed plasma anneals to provide the tantalum-nitride layer.
5. The method of claim 1, further comprising sequentially repeating the chemisorbing of the first layer and the second layer to provide the tantalum-nitride layer.
6. A method of film deposition for integrated circuit fabrication, comprising:
providing at least one process system, the at least one process system having a chamber;
locating a substrate in the chamber;
providing a tantalum containing gas to the chamber;
chemisorbing a first layer on the substrate at least in partial response to the tantalum containing gas;
purging the chamber with at least one purge gas;
providing a nitrogen containing gas to the chamber;
chemisorbing a second layer on the first layer at least in partial response to the nitrogen containing gas;
purging the chamber with the at least one purge gas; and
forming a plasma for annealing the second layer.
7. The method of claim 6, further comprising sequentially repeating the chemisorbing of the first layer, the purging of the chamber and the chemisorbing of the second layer to provide multiple tantalum nitride sublayers.
8. The method of claim 6, wherein the substrate is maintained approximately below a thermal decomposition temperature of the tantalum containing gas for chemisorbing of the first layer.
9. The method of claim 8, wherein the substrate is maintained approximately above the thermal decomposition temperature of the tantalum containing gas for the chemisorbing of the first layer.
10. The method of claim 8, wherein the purge gas is selected from the group of helium (He), neon (Ne), argon (Ar), hydrogen (H2 ), nitrogen (N2), and combinations thereof.
11. The method of claim 10, further comprising providing a plasma source gas to the chamber for ignition to provide the plasma.
12. The method of claim 11, wherein the plasma source gas and the at least one purge gas is argon (Ar).
13. The method of claim 8, wherein the nitrogen containing gas is ammonia (NH3).
14. A method of film deposition for integrated circuit fabrication, comprising:
co-reacting a tantalum containing precursor and a nitrogen containing precursor to chemisorb a first layer on a wafer surface to provide a tantalum-nitride layer; and
plasma annealing the tantalum-nitride layer to remove nitrogen therefrom.
15. The method of claim 14, wherein the plasma annealing is performed with a plasma source material chemically non-reactive to the tantalum-nitride layer and having an atomic mass closer to nitrogen than tantalum.
16. The method of claim 15, wherein the plasma annealing is performed with plasma source material selected from argon (Ar), xenon (Xe), helium (He), hydrogen (H2), nitrogen (N2), neon (Ne), and combinations thereof.
17. A method of film deposition for integrated circuit fabrication, comprising:
providing a process system, the process system having a chamber;
locating a substrate in the process chamber;
providing a tantalum containing gas to the chamber;
providing a nitrogen containing gas to the chamber;
chemisorbing tantalum and nitrogen from the tantalum containing gas and the nitrogen containing gas to provide a tantalum-nitride layer on the substrate; and
plasma annealing the tantalum-nitride layer.
18. The method of claim 17, wherein the tantalum containing gas is a tantalum based organo-metallic precursor or a derivative thereof.
19. The method of claim 18, wherein the tantalum based organo-metallic precursor is selected from pentaethylmethylamino-tantalum (PEMAT), pentadiethylamino-tantalum (PDEAT), pentadimethylamino-tantalum (PDMAT), and derivatives thereof.
20. The method of claim 18 wherein the tantalum based organo-metallic precursor is selected from Ta(NMe2)5, Ta(NEt2)5, TBTDET, and tantalum halides.
21. The method of claim 18 wherein the nitrogen containing gas is ammonia (NH3).
22. The method of claim 17, wherein the substrate is maintained approximately below a thermal decomposition temperature of the tantalum containing gas.
23. The method of claim 17, wherein the substrate is maintained approximately above a thermal decomposition temperature of the tantalum containing gas.
24. A method of film deposition for integrated circuit fabrication comprising:
providing a process system, the process system having a chamber;
locating a substrate in the process chamber;
providing a tantalum containing gas to the chamber wherein the tantalum containing gas is a tantalum based organo-metallic precursor or a derivative thereof;
providing a nitrogen containing gas to the chamber; and
chemisorbing tantalum and nitrogen from the tantalum containing gas and the nitrogen containing gas to provide a tantalum-nitride layer on the substrate, wherein the substrate is maintained approximately above a thermal decomposition temperature of the tantalum containing gas.
25. A method of film deposition for integrated circuit fabrication comprising:
providing a process system, the process system having a chamber;
locating a substrate in the process chamber;
providing a tantalum containing gas to the chamber;
providing a nitrogen containing gas to the chamber;
chemisorbing tantalum and nitrogen from the tantalum containing gas and the nitrogen containing gas to provide a tantalum-nitride layer on the substrate; and
maintaining the substrate approximately above a thermal decomposition temperature of the tantalum containing gas.
US09/776,329 2001-02-02 2001-02-02 Formation of a tantalum-nitride layer Expired - Lifetime US6951804B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US09/776,329 US6951804B2 (en) 2001-02-02 2001-02-02 Formation of a tantalum-nitride layer
PCT/US2002/002651 WO2002063677A1 (en) 2001-02-02 2002-01-30 Formation of a tantalum-nitride layer
TW91101853A TW525270B (en) 2001-02-02 2002-02-01 Formation of a tantalum-nitride layer
US11/088,072 US7094680B2 (en) 2001-02-02 2005-03-23 Formation of a tantalum-nitride layer
US11/240,189 US7781326B2 (en) 2001-02-02 2005-09-30 Formation of a tantalum-nitride layer
US12/846,253 US8114789B2 (en) 2001-02-02 2010-07-29 Formation of a tantalum-nitride layer
US13/396,311 US9012334B2 (en) 2001-02-02 2012-02-14 Formation of a tantalum-nitride layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/776,329 US6951804B2 (en) 2001-02-02 2001-02-02 Formation of a tantalum-nitride layer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/088,072 Continuation US7094680B2 (en) 2001-02-02 2005-03-23 Formation of a tantalum-nitride layer

Publications (2)

Publication Number Publication Date
US20020106846A1 US20020106846A1 (en) 2002-08-08
US6951804B2 true US6951804B2 (en) 2005-10-04

Family

ID=25107082

Family Applications (5)

Application Number Title Priority Date Filing Date
US09/776,329 Expired - Lifetime US6951804B2 (en) 2001-02-02 2001-02-02 Formation of a tantalum-nitride layer
US11/088,072 Expired - Fee Related US7094680B2 (en) 2001-02-02 2005-03-23 Formation of a tantalum-nitride layer
US11/240,189 Expired - Fee Related US7781326B2 (en) 2001-02-02 2005-09-30 Formation of a tantalum-nitride layer
US12/846,253 Expired - Fee Related US8114789B2 (en) 2001-02-02 2010-07-29 Formation of a tantalum-nitride layer
US13/396,311 Expired - Fee Related US9012334B2 (en) 2001-02-02 2012-02-14 Formation of a tantalum-nitride layer

Family Applications After (4)

Application Number Title Priority Date Filing Date
US11/088,072 Expired - Fee Related US7094680B2 (en) 2001-02-02 2005-03-23 Formation of a tantalum-nitride layer
US11/240,189 Expired - Fee Related US7781326B2 (en) 2001-02-02 2005-09-30 Formation of a tantalum-nitride layer
US12/846,253 Expired - Fee Related US8114789B2 (en) 2001-02-02 2010-07-29 Formation of a tantalum-nitride layer
US13/396,311 Expired - Fee Related US9012334B2 (en) 2001-02-02 2012-02-14 Formation of a tantalum-nitride layer

Country Status (3)

Country Link
US (5) US6951804B2 (en)
TW (1) TW525270B (en)
WO (1) WO2002063677A1 (en)

Cited By (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050260348A1 (en) * 2001-05-07 2005-11-24 Samsung Electronics Co., Ltd. Thin film including multi components and method of forming the same
US20060003581A1 (en) * 2004-06-30 2006-01-05 Johnston Steven W Atomic layer deposited tantalum containing adhesion layer
US20060014384A1 (en) * 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
US20060040496A1 (en) * 2004-08-20 2006-02-23 Hsien-Che Teng Method of forming a material film
US20060216928A1 (en) * 2001-12-07 2006-09-28 Hua Chung Cyclical deposition of refractory metal silicon nitride
US20070026147A1 (en) * 2001-10-26 2007-02-01 Ling Chen Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US7211508B2 (en) 2003-06-18 2007-05-01 Applied Materials, Inc. Atomic layer deposition of tantalum based barrier materials
US20070117363A1 (en) * 2001-11-14 2007-05-24 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US20080008823A1 (en) * 2003-01-07 2008-01-10 Ling Chen Deposition processes for tungsten-containing barrier layers
US20080102203A1 (en) * 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US20080107809A1 (en) * 2001-10-26 2008-05-08 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US7402210B2 (en) 2002-11-14 2008-07-22 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7465665B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for depositing tungsten-containing layers by vapor deposition techniques
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7470611B2 (en) 1998-10-01 2008-12-30 Applied Materials, Inc. In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US20090081866A1 (en) * 2000-06-28 2009-03-26 Sang-Hyeob Lee Vapor deposition of tungsten materials
US7514358B2 (en) 2002-03-04 2009-04-07 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7569501B2 (en) 2002-06-14 2009-08-04 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US20090212434A1 (en) * 2008-02-22 2009-08-27 Anderson Felix P Methods of manufacturing semiconductor devices and a semiconductor structure
US7585762B2 (en) 2007-09-25 2009-09-08 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US20090227105A1 (en) * 2008-03-04 2009-09-10 Xinyu Fu Methods of forming a layer for barrier applications in an interconnect structure
US7605083B2 (en) 2001-07-16 2009-10-20 Applied Materials, Inc. Formation of composite tungsten films
US7611990B2 (en) 2001-07-25 2009-11-03 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US7678298B2 (en) 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7682946B2 (en) 2005-11-04 2010-03-23 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7695563B2 (en) 2001-07-13 2010-04-13 Applied Materials, Inc. Pulsed deposition process for tungsten nucleation
US7699023B2 (en) 2001-10-26 2010-04-20 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20100120245A1 (en) * 2008-11-07 2010-05-13 Agus Sofian Tjandra Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
US7745333B2 (en) 2000-06-28 2010-06-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7745329B2 (en) 2002-02-26 2010-06-29 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7749815B2 (en) 2001-07-16 2010-07-06 Applied Materials, Inc. Methods for depositing tungsten after surface treatment
US20100190353A1 (en) * 2003-02-04 2010-07-29 Tegal Corporation Nanolayer deposition process
US7781326B2 (en) * 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7794544B2 (en) 2004-05-12 2010-09-14 Applied Materials, Inc. Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US20100285237A1 (en) * 2001-09-10 2010-11-11 Tegal Corporation Nanolayer deposition using bias power treatment
US7858816B2 (en) 2007-01-18 2010-12-28 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US7867914B2 (en) 2002-04-16 2011-01-11 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
US9418890B2 (en) 2008-09-08 2016-08-16 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US9972672B1 (en) 2017-01-11 2018-05-15 International Business Machines Corporation Tunable resistor with curved resistor elements
US9991330B1 (en) 2017-01-11 2018-06-05 International Business Machines Corporation Resistors with controlled resistivity
US10283583B2 (en) 2017-01-11 2019-05-07 International Business Machines Corporation 3D resistor structure with controlled resistivity
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
US11015252B2 (en) 2018-04-27 2021-05-25 Applied Materials, Inc. Protection of components from corrosion
US11028480B2 (en) 2018-03-19 2021-06-08 Applied Materials, Inc. Methods of protecting metallic components against corrosion using chromium-containing thin films
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
US11694912B2 (en) 2017-08-18 2023-07-04 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
US11732353B2 (en) 2019-04-26 2023-08-22 Applied Materials, Inc. Methods of protecting aerospace components against corrosion and oxidation
US11739429B2 (en) 2020-07-03 2023-08-29 Applied Materials, Inc. Methods for refurbishing aerospace components
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
US11976002B2 (en) 2021-01-05 2024-05-07 Applied Materials, Inc. Methods for encapsulating silver mirrors on optical structures

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7037574B2 (en) * 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US6849545B2 (en) * 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
US7105444B2 (en) * 2001-07-19 2006-09-12 Samsung Electronics Co., Ltd. Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
WO2003030224A2 (en) 2001-07-25 2003-04-10 Applied Materials, Inc. Barrier formation using novel sputter-deposition method
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
US7659209B2 (en) * 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) * 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US20040071878A1 (en) * 2002-08-15 2004-04-15 Interuniversitair Microelektronica Centrum (Imec Vzw) Surface preparation using plasma for ALD Films
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US6869876B2 (en) 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
US7244683B2 (en) 2003-01-07 2007-07-17 Applied Materials, Inc. Integration of ALD/CVD barriers with porous low k materials
US7011890B2 (en) * 2003-03-03 2006-03-14 Applied Materials Inc. Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US7071118B2 (en) * 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
JP3945519B2 (en) * 2004-06-21 2007-07-18 東京エレクトロン株式会社 Heat treatment apparatus, heat treatment method and storage medium for object to be processed
US20050287826A1 (en) * 2004-06-29 2005-12-29 Abell Thomas J Method of sealing low-k dielectrics and devices made thereby
US7863179B2 (en) * 2006-10-31 2011-01-04 Lam Research Corporation Methods of fabricating a barrier layer with varying composition for copper metallization
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
JP4515191B2 (en) * 2004-08-03 2010-07-28 東京エレクトロン株式会社 Deposition method
US7429402B2 (en) * 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US20060128146A1 (en) * 2004-12-10 2006-06-15 Chia-Lin Hsu Method of forming barrier layer and method of fabricating interconnect
US20060216548A1 (en) * 2005-03-22 2006-09-28 Ming Mao Nanolaminate thin films and method for forming the same using atomic layer deposition
US7538024B2 (en) * 2005-05-03 2009-05-26 United Microelectronics Corp. Method of fabricating a dual-damascene copper structure
US20060272577A1 (en) * 2005-06-03 2006-12-07 Ming Mao Method and apparatus for decreasing deposition time of a thin film
KR100657165B1 (en) * 2005-08-12 2006-12-13 동부일렉트로닉스 주식회사 Method for forming copper wiring and semiconductor device comprising copper wiring formed thereby
US20070065576A1 (en) * 2005-09-09 2007-03-22 Vikram Singh Technique for atomic layer deposition
KR20080047456A (en) 2005-09-15 2008-05-28 엔엑스피 비 브이 Structures for Semiconductor Devices and Manufacturing Method Thereof
EP1949416A2 (en) 2005-09-23 2008-07-30 Nxp B.V. A method of fabricating a structure for a semiconductor device
KR100738210B1 (en) * 2005-12-29 2007-07-10 동부일렉트로닉스 주식회사 Method of forming thin film and metal wiring in semiconductor device
US7959985B2 (en) * 2006-03-20 2011-06-14 Tokyo Electron Limited Method of integrating PEALD Ta-containing films into Cu metallization
US20070252299A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Synchronization of precursor pulsing and wafer rotation
US7557047B2 (en) * 2006-06-09 2009-07-07 Micron Technology, Inc. Method of forming a layer of material using an atomic layer deposition process
KR100716655B1 (en) * 2006-06-29 2007-05-09 주식회사 하이닉스반도체 Method for forming a dielectric film in which a zirconium oxide film and a tantalum oxide film are laminated and a method for manufacturing a capacitor using the same
CN101479834B (en) * 2006-06-30 2011-06-08 应用材料股份有限公司 Nanocrystal formation
US7897495B2 (en) * 2006-12-12 2011-03-01 Applied Materials, Inc. Formation of epitaxial layer containing silicon and carbon
US20080206987A1 (en) * 2007-01-29 2008-08-28 Gelatos Avgerinos V Process for tungsten nitride deposition by a temperature controlled lid assembly
US9064960B2 (en) * 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US7902064B1 (en) * 2007-05-16 2011-03-08 Intermolecular, Inc. Method of forming a layer to enhance ALD nucleation on a substrate
EP2011898B1 (en) * 2007-07-03 2021-04-07 Beneq Oy Method in depositing metal oxide materials
KR100905278B1 (en) * 2007-07-19 2009-06-29 주식회사 아이피에스 Thin film deposition apparatus, thin film deposition method and gap-fill method of semiconductor device
US9157150B2 (en) * 2007-12-04 2015-10-13 Cypress Semiconductor Corporation Method of operating a processing chamber used in forming electronic devices
US20090218692A1 (en) * 2008-02-29 2009-09-03 Roland Hampp Barrier for Copper Integration in the FEOL
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US20120122320A1 (en) * 2010-11-17 2012-05-17 Applied Materials, Inc. Method Of Processing Low K Dielectric Films
US8637410B2 (en) 2011-04-08 2014-01-28 Applied Materials, Inc. Method for metal deposition using hydrogen plasma
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US9466524B2 (en) * 2012-01-31 2016-10-11 Applied Materials, Inc. Method of depositing metals using high frequency plasma
US20140030444A1 (en) * 2012-07-30 2014-01-30 Novellus Systems, Inc. High pressure, high power plasma activated conformal film deposition
TWI595112B (en) 2012-10-23 2017-08-11 蘭姆研究公司 Sub-saturated atomic layer deposition and conformal film deposition
US9275865B2 (en) 2012-10-31 2016-03-01 Applied Materials, Inc. Plasma treatment of film for impurity removal
JP6538300B2 (en) 2012-11-08 2019-07-03 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ Method for depositing a film on a sensitive substrate
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
US8916469B2 (en) * 2013-03-12 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating copper damascene
US8962473B2 (en) * 2013-03-15 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming hybrid diffusion barrier layer and semiconductor device thereof
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
CN104822219B (en) 2015-05-18 2017-09-19 京东方科技集团股份有限公司 Plasma generator, annealing device, plated film crystallization equipment and annealing process
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10563304B2 (en) * 2017-04-07 2020-02-18 Applied Materials, Inc. Methods and apparatus for dynamically treating atomic layer deposition films in physical vapor deposition chambers
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
TW202349473A (en) * 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
US10636705B1 (en) 2018-11-29 2020-04-28 Applied Materials, Inc. High pressure annealing of metal gate structures
CN114127890A (en) 2019-05-01 2022-03-01 朗姆研究公司 tuned atomic layer deposition
US11437271B2 (en) * 2020-05-05 2022-09-06 Applied Materials, Inc. Seamless gap fill
US11410881B2 (en) 2020-06-28 2022-08-09 Applied Materials, Inc. Impurity removal in doped ALD tantalum nitride
WO2022160139A1 (en) * 2021-01-27 2022-08-04 Yangtze Memory Technologies Co., Ltd. Method for forming barrier layer in semiconductor structure

Citations (346)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4058430A (en) 1974-11-29 1977-11-15 Tuomo Suntola Method for producing compound thin films
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
JPS5898917U (en) 1981-12-26 1983-07-05 株式会社フジ医療器 Arm stretcher attached to chair-type pine surgery machine
JPS58100419U (en) 1981-12-26 1983-07-08 株式会社　ブレスト工業研究所 Conduit support for slab concrete pouring
US4413022A (en) 1979-02-28 1983-11-01 Canon Kabushiki Kaisha Method for performing growth of compound thin films
US4486487A (en) 1982-05-10 1984-12-04 Oy Lohja Ab Combination film, in particular for thin film electroluminescent structures
JPS6065712A (en) 1983-09-20 1985-04-15 Toshiba Corp Formation of silicon oxide coating film
JPS61210623A (en) 1985-03-15 1986-09-18 Sony Corp Manufacture of semiconductor device
JPS6135847Y2 (en) 1980-11-05 1986-10-18
JPS6291495A (en) 1985-10-15 1987-04-25 Nec Corp Vapor growth method for thin semiconductor film
JPS6269508U (en) 1985-10-23 1987-05-01
JPS62141717U (en) 1986-02-28 1987-09-07
JPS62232919A (en) 1986-04-02 1987-10-13 Rikagaku Kenkyusho Crystal growth
JPS62167297U (en) 1986-04-14 1987-10-23
JPS62171999U (en) 1986-04-09 1987-10-31
JPS6385098U (en) 1986-11-20 1988-06-03
JPS6390833U (en) 1986-12-03 1988-06-13
US4767494A (en) 1986-07-04 1988-08-30 Nippon Telegraph & Telephone Corporation Preparation process of compound semiconductor
JPS63222420A (en) 1987-03-12 1988-09-16 Nec Corp Epitaxial growth method for atomic layer of iii-v compound semiconductor
JPS63222421A (en) 1987-03-12 1988-09-16 Nec Corp Epitaxial growth method for atomic layer of iii-v compound semiconductor
JPS63227007A (en) 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd Vapor growth method
JPS63252420A (en) 1987-04-09 1988-10-19 Nec Corp Compound semiconductor crystal and manufacture thereof
JPS63266814A (en) 1987-04-24 1988-11-02 Nec Corp Forming method for al iii-v compound semiconductor thin film
JPS6362313B2 (en) 1983-07-01 1988-12-01
JPS649896B2 (en) 1983-08-03 1989-02-20 Hitachi Ltd
JPS649897B2 (en) 1984-01-31 1989-02-20 Topura Kk
JPS649895B2 (en) 1982-02-22 1989-02-20 Nitsushin Seiko Kk
US4806321A (en) 1984-07-26 1989-02-21 Research Development Corporation Of Japan Use of infrared radiation and an ellipsoidal reflection mirror
JPS6437832U (en) 1987-09-02 1989-03-07
US4813846A (en) 1987-02-13 1989-03-21 Leybold-Heraeus Gmbh Inserting device for vacuum apparatus
JPS6482617A (en) 1987-09-25 1989-03-28 Nec Corp Method of epitaxial growth of atomic layer of regular mixed crystal
JPS6482676A (en) 1987-09-25 1989-03-28 Nec Corp Iii-v compound semiconductor field-effect transistor and manufacture thereof
JPS6482615A (en) 1987-09-25 1989-03-28 Nec Corp Manufacture of semiconductor element
JPS6482671A (en) 1987-09-25 1989-03-28 Nec Corp Manufacture of mis field-effect transistor
JPS6490524A (en) 1987-10-01 1989-04-07 Nec Corp Manufacture of semiconductor device
JPH01103996A (en) 1987-10-16 1989-04-21 Nec Corp Vapor growth method for compound semiconductor
US4829022A (en) 1985-12-09 1989-05-09 Nippon Telegraph And Telephone Corporation Method for forming thin films of compound semiconductors by flow rate modulation epitaxy
US4834831A (en) 1986-09-08 1989-05-30 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
JPH01143233A (en) 1987-11-27 1989-06-05 Nec Corp Manufacture of semiconductor element
US4838993A (en) 1986-12-04 1989-06-13 Seiko Instruments Inc. Method of fabricating MOS field effect transistor
US4838983A (en) 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4840921A (en) 1987-07-01 1989-06-20 Nec Corporation Process for the growth of III-V group compound semiconductor crystal on a Si substrate
US4845049A (en) 1987-03-27 1989-07-04 Nec Corporation Doping III-V compound semiconductor devices with group VI monolayers using ALE
JPH01103982U (en) 1987-12-28 1989-07-13
FR2626110A1 (en) 1988-01-19 1989-07-21 Thomson Csf Process for producing a layer of a superconductive material by epitaxy
JPH01117017U (en) 1988-01-30 1989-08-08
US4859625A (en) 1986-11-22 1989-08-22 Research Development Corporation of Japan, Junichi Nishizawa and Oki Electric Industry Co., Ltd. Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy
US4859627A (en) 1987-07-01 1989-08-22 Nec Corporation Group VI doping of III-V semiconductors during ALE
US4861417A (en) 1987-03-27 1989-08-29 Fujitsu Limited Method of growing group III-V compound semiconductor epitaxial layer
JPH01236657A (en) 1988-03-17 1989-09-21 Toshiba Corp Semiconductor device and manufacture thereof
JPH01245512A (en) 1988-03-28 1989-09-29 Nippon Telegr & Teleph Corp <Ntt> Formation of iii-v compound semiconductor by epitaxial growth
JPH01143221U (en) 1988-03-25 1989-10-02
JPH01264218A (en) 1988-04-15 1989-10-20 Fujitsu Ltd Atomic layer epitaxial growth
JPH01154511U (en) 1988-04-13 1989-10-24
US4876218A (en) 1987-09-29 1989-10-24 Oy Nokia Ab Method of growing GaAs films on Si or GaAs substrates using ale
JPH01270593A (en) 1988-04-21 1989-10-27 Fujitsu Ltd Compound semiconductor layer formation method
JPH01272108A (en) 1988-04-25 1989-10-31 Nippon Telegr & Teleph Corp <Ntt> Growth of compound semiconductor
JPH01290221A (en) 1988-05-18 1989-11-22 Fujitsu Ltd Semiconductor vapor phase growth method
JPH01290222A (en) 1988-05-18 1989-11-22 Fujitsu Ltd Semiconductor vapor phase growth method
JPH01296673A (en) 1988-05-25 1989-11-30 Nec Corp Iii-v compound semiconductor device
EP0344352A1 (en) 1988-06-03 1989-12-06 International Business Machines Corporation Method for making artificial layered high-Tc superconductors
JPH01303770A (en) 1988-06-01 1989-12-07 Oki Electric Ind Co Ltd Manufacture of superconductive base transistor
JPH01305894A (en) 1988-06-03 1989-12-11 Matsushita Electric Ind Co Ltd Thin film crystal growth device and growth method
JPH01313927A (en) 1988-06-14 1989-12-19 Fujitsu Ltd Compound-semiconductor crystal growth method
WO1990002216A1 (en) 1988-08-25 1990-03-08 Vac-Tec Systems, Inc. Physical vapor deposition dual coating apparatus and process
JPH0274029A (en) 1988-09-09 1990-03-14 Fujitsu Ltd Thin film forming method and device
JPH0212814B2 (en) 1983-08-05 1990-03-28 Monopurasuto Sa
US4917556A (en) 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
JPH02106822A (en) 1988-10-14 1990-04-18 Hitachi Ltd Thin film forming method and thin film forming apparatus
JPH0214513Y2 (en) 1983-10-29 1990-04-19
JPH0217634Y2 (en) 1985-05-28 1990-05-17
US4927670A (en) 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US4931132A (en) 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
JPH0274587U (en) 1988-11-25 1990-06-07
JPH02162717A (en) 1988-12-15 1990-06-22 Fujitsu Ltd How to form quantum wires
JPH02172895A (en) 1988-12-22 1990-07-04 Nec Corp Method for growing semiconductor crystal
JPH02196092A (en) 1989-01-25 1990-08-02 Sumitomo Electric Ind Ltd Atomic layer epitaxial growth device of compound semiconductor
JPH02203517A (en) 1989-02-01 1990-08-13 Nec Corp Selective vapor-phase epitaxy of iii-v compound semiconductor
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPH02230690A (en) 1989-03-03 1990-09-13 Fujitsu Ltd Thin film el panel
JPH02230722A (en) 1989-03-03 1990-09-13 Nec Corp Vapor growth method of compound semiconductor
JPH02246161A (en) 1989-03-17 1990-10-01 Fujitsu Ltd Thin-film transistor
US4960720A (en) 1986-08-26 1990-10-02 Masafumi Shimbo Method of growing compound semiconductor thin film using multichamber smoothing process
JPH02129913U (en) 1989-03-31 1990-10-26
JPH02264491A (en) 1989-04-04 1990-10-29 Mitsubishi Electric Corp Manufacture of distributed feedback type semiconductor laser
JPH02283084A (en) 1989-04-25 1990-11-20 Fujitsu Ltd Manufacturing method of semiconductor laser
US4975252A (en) 1984-07-26 1990-12-04 Junichi Nishizawa Semiconductor crystal growth apparatus
JPH02304916A (en) 1989-05-19 1990-12-18 Nec Corp Vapor growing device for iii-v compound semiconductor
JPH0263115B2 (en) 1983-06-29 1990-12-27 Mtu Friedrichshafen Gmbh
US4993357A (en) 1987-12-23 1991-02-19 Cs Halbleiter -Und Solartechnologie Gmbh Apparatus for atomic layer epitaxial growth
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPH0319211Y2 (en) 1985-10-17 1991-04-23
US5013683A (en) 1989-01-23 1991-05-07 The Regents Of The University Of California Method for growing tilted superlattices
JPH0322569Y2 (en) 1986-10-24 1991-05-16
JPH0323294Y2 (en) 1986-05-09 1991-05-21
JPH0323299Y2 (en) 1985-12-27 1991-05-21
EP0429270A2 (en) 1989-11-20 1991-05-29 Kokusai Electric Co., Ltd. Continuous etching method and apparatus therefor
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
JPH0348421B2 (en) 1986-03-11 1991-07-24 Yazaki Corp
WO1991010510A1 (en) 1990-01-16 1991-07-25 Neste Oy Process and apparatus for preparing heterogeneous catalysts
JPH03185716A (en) 1989-12-14 1991-08-13 Fujitsu Ltd Method of growing compound semiconductor crystal
EP0442490A1 (en) 1990-02-14 1991-08-21 Sumitomo Electric Industries, Ltd. Method for producing single crystal boron nitride film
JPH03208885A (en) 1990-01-09 1991-09-12 Tdk Corp Method for depositing oxide at atomic layer level by vapor growth method
JPH0344967Y2 (en) 1990-10-17 1991-09-24
JPH03234025A (en) 1990-02-09 1991-10-18 Fujitsu Ltd Method of forming insulating thin film
JPH0370124B2 (en) 1986-02-21 1991-11-06 Ebara Mfg
JPH03286522A (en) 1990-04-03 1991-12-17 Nec Corp Growth method of si crystal
JPH03286531A (en) 1990-04-02 1991-12-17 Kawasaki Steel Corp Formation of silicon oxide film
US5082798A (en) 1990-04-18 1992-01-21 Mitsubishi Denki Kabushiki Kaisha Crystal growth method
JPH0431396A (en) 1990-05-24 1992-02-03 Fujitsu Ltd Semiconductor crystal growth method
US5085885A (en) 1990-09-10 1992-02-04 University Of Delaware Plasma-induced, in-situ generation, transport and use or collection of reactive precursors
US5091320A (en) 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
JPH04100292A (en) 1990-08-20 1992-04-02 Fujitsu Ltd semiconductor laser
JPH04151822A (en) 1990-10-15 1992-05-25 Toshiba Corp Vapor growth method for compound semiconductor organic metal
JPH04162418A (en) 1990-10-24 1992-06-05 Fujitsu Ltd Chemical vapor growth method
JPH04175299A (en) 1990-11-09 1992-06-23 Fujitsu Ltd Compound semiconductor crystal growth and compound semiconductor device
JPH04186824A (en) 1990-11-21 1992-07-03 Fujitsu Ltd Semiconductor substrate and its manufacturing method
US5130269A (en) 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
JPH0431396Y2 (en) 1987-05-14 1992-07-28
JPH0431391Y2 (en) 1986-07-15 1992-07-28
JPH04212411A (en) 1990-06-19 1992-08-04 Nec Corp Epitaxial growth method
JPH04260696A (en) 1991-02-08 1992-09-16 Fujitsu Ltd Method for manufacturing compound semiconductor crystal
JPH04111418U (en) 1991-03-19 1992-09-28 三菱重工業株式会社 twin screw extruder
JPH04273120A (en) 1991-02-27 1992-09-29 Nec Corp Region-selective crystal growth method
JPH04285167A (en) 1991-03-15 1992-10-09 Limes:Kk Method for continuously forming thin film
JPH04291916A (en) 1991-03-20 1992-10-16 Kokusai Electric Co Ltd Vapor phase growth method and apparatus
JPH04325500A (en) 1991-04-26 1992-11-13 Sanyo Electric Co Ltd Method for controlling structure of crystalline surface
JPH04328874A (en) 1991-04-27 1992-11-17 Sanyo Electric Co Ltd Electrostatic induction transistor and manufacture thereof
US5166092A (en) 1988-01-28 1992-11-24 Fujitsu Limited Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
JPH04132214U (en) 1991-02-01 1992-12-07 ポツプリベツト・フアスナー株式会社 Welding stud with cap
JPH04132681U (en) 1991-05-30 1992-12-09 日本電気株式会社 Magnetic disk assembly hand mechanism
US5173474A (en) 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
WO1993002111A1 (en) 1991-07-16 1993-02-04 Neste Oy Process for preparing a polymerization catalyst by vapourizing chromium acetylacetonate
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
JPH05102189A (en) 1991-08-13 1993-04-23 Fujitsu Ltd Thin film forming method, silicon thin film and silicon thin film transistor forming method
US5205077A (en) 1990-08-31 1993-04-27 Peter Wolters Ag Apparatus for controlling operation of a lapping, honing or polishing machine
US5221449A (en) 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
JPH05160152A (en) 1991-12-05 1993-06-25 Fujitsu Ltd Manufacture of film transistor
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
JPH05175145A (en) 1991-12-26 1993-07-13 Fujitsu Ltd Crystal growth method
JPH05175143A (en) 1991-12-26 1993-07-13 Fujitsu Ltd Manufacture of compound semiconductor device
JPH05182906A (en) 1991-12-27 1993-07-23 Sumitomo Electric Ind Ltd Heteroepitaxial growth method
JPH0529228Y2 (en) 1990-10-31 1993-07-27
JPH05186295A (en) 1992-01-13 1993-07-27 Fujitsu Ltd Crystal growth method
US5234561A (en) 1988-08-25 1993-08-10 Hauzer Industries Bv Physical vapor deposition dual coating process
JPH05206036A (en) 1992-01-30 1993-08-13 Rikagaku Kenkyusho Film formation method and film formation apparatus
JPH05234899A (en) 1991-09-17 1993-09-10 Hitachi Ltd Atomic layer epitaxy system
JPH05235047A (en) 1992-02-19 1993-09-10 Nec Corp Manufacture of field-effect transistor
US5246536A (en) 1986-09-08 1993-09-21 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
JPH05251339A (en) 1991-08-14 1993-09-28 Fujitsu Ltd Semiconductor substrate and manufacturing method thereof
US5250148A (en) 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
JPH0574724B2 (en) 1987-04-27 1993-10-19 Fischer Artur Werke Gmbh
JPH0574717B2 (en) 1986-02-14 1993-10-19 Fuji Electric Co Ltd
JPH05270997A (en) 1992-03-19 1993-10-19 Fujitsu Ltd Atomic layer epitaxy apparatus and atomic layer epitaxy method
US5254207A (en) 1991-11-30 1993-10-19 Research Development Corporation Of Japan Method of epitaxially growing semiconductor crystal using light as a detector
US5256244A (en) 1992-02-10 1993-10-26 General Electric Company Production of diffuse reflective coatings by atomic layer epitaxy
JPH05291152A (en) 1992-04-15 1993-11-05 Hitachi Ltd X-ray analyzer and semiconductor manufacturing apparatus using the same
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
JPH05304334A (en) 1992-04-28 1993-11-16 Nec Corp Fabrication of semiconductor laser
US5270247A (en) 1991-07-12 1993-12-14 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
JPH0547666Y2 (en) 1985-03-15 1993-12-15
JPH0547668Y2 (en) 1989-04-14 1993-12-15
JPH0547665Y2 (en) 1987-10-23 1993-12-15
JPH05343327A (en) 1992-06-12 1993-12-24 Fujitsu Ltd Film-forming method
JPH05343685A (en) 1992-06-05 1993-12-24 Fujitsu Ltd Manufacture of silicon thin film transistor
FR2692597A1 (en) 1992-06-18 1993-12-24 Mikrokemia Oy Introducing liq. phase reactants into reaction chamber - by passing liq. into vaporiser contg. microporous packing then transporting vapour to reactor using carrier gas
US5278435A (en) 1992-06-08 1994-01-11 Apa Optics, Inc. High responsivity ultraviolet gallium nitride detector
US5286296A (en) 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
US5290748A (en) 1990-01-16 1994-03-01 Neste Oy Polymerization catalyst for olefines
US5294286A (en) 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
US5296403A (en) 1990-01-31 1994-03-22 Research Development Corp. Of Japan Method of manufacturing a static induction field-effect transistor
US5311055A (en) 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
JPH06132236A (en) 1992-10-20 1994-05-13 Fujitsu Ltd Method for manufacturing semiconductor device
US5316793A (en) 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
US5316615A (en) 1990-03-23 1994-05-31 International Business Machines Corporation Surfactant-enhanced epitaxy
JPH06177381A (en) 1992-12-03 1994-06-24 Fujitsu Ltd Thin film transistor matrix and manufacturing method thereof
JPH06196809A (en) 1992-12-22 1994-07-15 Mitsubishi Electric Corp Semiconductor optical device and manufacture thereof
US5330610A (en) 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback
US5336324A (en) 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
JPH06222388A (en) 1993-01-28 1994-08-12 Fujitsu Ltd Production of thin film transistor matrix
US5338389A (en) 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
JPH06230421A (en) 1993-02-02 1994-08-19 Fujitsu Ltd Method of manufacturing thin film transistor matrix
JPH06252057A (en) 1993-02-24 1994-09-09 Toshiba Corp Manufacture of semiconductor device
US5348911A (en) 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
JPH06291048A (en) 1992-07-02 1994-10-18 Nissin Electric Co Ltd Thin-film formation method
JPH0645606Y2 (en) 1988-03-07 1994-11-24 マツダ株式会社 Engine oil return device
US5395791A (en) 1992-05-22 1995-03-07 Minnesota Mining And Manufacturing Company Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
JPH0770752B2 (en) 1988-05-30 1995-07-31 日本電気株式会社 Quantum interference device
US5438952A (en) 1993-03-24 1995-08-08 Fujitsu Limited Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor layer
US5441703A (en) 1987-06-30 1995-08-15 Aixtron Gmbh Gas inlet for a plurality of reactant gases into reaction vessel
US5443647A (en) 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
JPH0786269B2 (en) 1990-11-30 1995-09-20 住友ゴム工業株式会社 Tool for construction of sinking floor coating
US5455072A (en) 1992-11-18 1995-10-03 Bension; Rouvain M. Initiation and bonding of diamond and other thin films
US5458084A (en) 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
US5469806A (en) 1992-08-21 1995-11-28 Nec Corporation Method for epitaxial growth of semiconductor crystal by using halogenide
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
US5483919A (en) 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
US5503875A (en) 1993-03-18 1996-04-02 Tokyo Electron Limited Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily
US5521126A (en) 1993-06-25 1996-05-28 Nec Corporation Method of fabricating semiconductor devices
WO1996017107A1 (en) 1994-11-28 1996-06-06 Mikrokemia Oy Method and apparatus for growing thin films
US5527733A (en) 1989-07-27 1996-06-18 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
WO1996018756A1 (en) 1994-12-16 1996-06-20 Nkt Research Center A/S A PA-CVD PROCESS FOR DEPOSITION OF A SOLID METAL-CONTAINING FILM ONTO A SUBSTRATE CONTAINING AT LEAST 50 % of Fe or WC
US5532511A (en) 1992-10-23 1996-07-02 Research Development Corp. Of Japan Semiconductor device comprising a highspeed static induction transistor
JPH08181076A (en) 1994-10-26 1996-07-12 Fuji Xerox Co Ltd Thin film forming method and device
JPH08245291A (en) 1995-03-10 1996-09-24 Sumitomo Electric Ind Ltd Method for growing III-V compound semiconductor crystal
JPH08264530A (en) 1995-03-20 1996-10-11 Fujitsu Ltd Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
JPH08283336A (en) 1995-04-20 1996-10-29 Toagosei Co Ltd Method of stabilizing hydroxylated polymer
US5580380A (en) 1991-12-20 1996-12-03 North Carolina State University Method for forming a diamond coated field emitter and device produced thereby
US5601651A (en) 1992-09-17 1997-02-11 Fujitsu Limited Flow control valve for use in fabrication of semiconductor devices
US5609689A (en) 1995-06-09 1997-03-11 Tokyo Electron Limited Vacuum process apparaus
US5616181A (en) 1994-11-24 1997-04-01 Mitsubishi Denki Kabushiki Kaisha MBE apparatus and gas branch piping apparatus
US5637530A (en) 1991-09-09 1997-06-10 U.S. Philips Corporation II-VI compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same
US5641984A (en) 1994-08-19 1997-06-24 General Electric Company Hermetically sealed radiation imager
US5644128A (en) 1994-08-25 1997-07-01 Ionwerks Fast timing position sensitive detector
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
JPH09260786A (en) 1996-03-22 1997-10-03 Hitachi Ltd Semiconductor light emitting device and method of manufacturing the same
US5674786A (en) 1993-01-28 1997-10-07 Applied Materials, Inc. Method of heating and cooling large area glass substrates
EP0799641A2 (en) 1996-04-03 1997-10-08 Mikrokemia Oy Functional surfaces for chemical reactions and process for the preparation thereof
JPH09293681A (en) 1996-04-26 1997-11-11 Sharp Corp Vapor growth device
US5693139A (en) 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US5695564A (en) 1994-08-19 1997-12-09 Tokyo Electron Limited Semiconductor processing system
US5705224A (en) 1991-03-20 1998-01-06 Kokusai Electric Co., Ltd. Vapor depositing method
US5711811A (en) 1994-11-28 1998-01-27 Mikrokemia Oy Method and equipment for growing thin films
US5730802A (en) 1994-05-20 1998-03-24 Sharp Kabushiki Kaisha Vapor growth apparatus and vapor growth method capable of growing good productivity
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5747113A (en) 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5749974A (en) 1994-07-15 1998-05-12 Shin-Etsu Handotai Co., Ltd. Method of chemical vapor deposition and reactor therefor
WO1998006889A3 (en) 1996-08-16 1998-07-02 Forward Technology Ind Inc Superheated vapor dryer system
JPH10190128A (en) 1996-12-27 1998-07-21 Sony Corp Manufacture of semiconductor light emitting device
JPH10188840A (en) 1996-12-21 1998-07-21 Korea Electron Telecommun Light emitting particles for field emission display and method for forming light emitting layer for field emission display
US5788447A (en) 1995-08-05 1998-08-04 Kokusai Electric Co., Ltd. Substrate processing apparatus
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
US5801634A (en) 1997-09-08 1998-09-01 Sony Corporation Signal tower controller
US5807792A (en) 1996-12-18 1998-09-15 Siemens Aktiengesellschaft Uniform distribution of reactants in a device layer
US5830270A (en) 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US5835677A (en) 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
JPH10308283A (en) 1997-03-04 1998-11-17 Denso Corp El element and its manufacture
WO1998051838A1 (en) 1997-05-16 1998-11-19 Applied Materials, Inc. Low resistivity w using b2h¿6?
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
US5856219A (en) 1992-12-02 1999-01-05 Matsushita Electric Industrial Co., Ltd. Method of fabricating a high-density dynamic random-access memory
US5855675A (en) 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US5855680A (en) 1994-11-28 1999-01-05 Neste Oy Apparatus for growing thin films
WO1999001595A1 (en) 1997-07-04 1999-01-14 Asm Microchemistry Ltd Method and apparatus for growing thin films
US5866795A (en) 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US5866213A (en) 1994-06-03 1999-02-02 Tokyo Electron Limited Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5882165A (en) 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US5882413A (en) 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
WO1999013504A1 (en) 1997-09-10 1999-03-18 Tokyo Electron Limited A load-lock mechanism and processing apparatus
US5904565A (en) 1997-07-17 1999-05-18 Sharp Microelectronics Technology, Inc. Low resistance contact between integrated circuit metal levels and method for same
WO1999029924A1 (en) 1997-12-09 1999-06-17 Asm Microchemistry Ltd. Method for coating inner surfaces of equipment
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US5923056A (en) 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US5923985A (en) 1987-01-05 1999-07-13 Seiko Instruments Inc. MOS field effect transistor and its manufacturing method
US5925574A (en) 1989-12-01 1999-07-20 Seiko Instruments Inc. Method of producing a bipolar transistor
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
WO1999041423A2 (en) 1998-02-11 1999-08-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US5942040A (en) 1996-08-27 1999-08-24 Electronics And Telecommunications Research Institute Multi-target manipulator for pulsed laser deposition apparatus
US5947710A (en) 1995-12-07 1999-09-07 Carrier Corporation Rotary compressor with reduced lubrication sensitivity
US5951771A (en) 1996-09-30 1999-09-14 Celestech, Inc. Plasma jet system
JPH11269652A (en) 1998-03-14 1999-10-05 Samsung Electronics Co Ltd Production of thin film
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
US6001415A (en) * 1997-12-03 1999-12-14 Advanced Micro Devices, Inc. Via with barrier layer for impeding diffusion of conductive material from via into insulator
US6013575A (en) 1995-07-07 2000-01-11 Kabushiki Kaisha Toshiba Method of selectively depositing a metal film
JP2000031387A (en) 1998-07-14 2000-01-28 Fuji Electric Co Ltd Method of manufacturing dielectric thin film capacitor
US6025627A (en) 1998-05-29 2000-02-15 Micron Technology, Inc. Alternate method and structure for improved floating gate tunneling devices
JP2000058777A (en) 1998-08-12 2000-02-25 Samsung Electronics Co Ltd Capacitor having alumina / aluminum nitride composite dielectric film formed by atomic layer deposition method and method of manufacturing the same
WO2000011721A1 (en) 1998-08-20 2000-03-02 The Government Of The United States Of America, Represented By The Secretary Of The Navy Electronic devices with barrier film and process for making same
JP2000068072A (en) 1998-08-21 2000-03-03 Planar Syst Inc Thin-film electroluminescence device and method of manufacturing the same
US6036773A (en) 1996-08-21 2000-03-14 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Method for growing Group III atomic layer
WO2000016377A2 (en) 1998-09-10 2000-03-23 Genitech Co., Ltd. Method for forming a three-component nitride film containing metal and silicon
WO2000015881A2 (en) 1998-09-14 2000-03-23 Genitech Co., Ltd. Gas feeding system for chemical vapor deposition reactor and method of controlling the same
WO2000015865A1 (en) 1998-09-11 2000-03-23 Asm Microchemistry Oy Method for growing oxide thin films containing barium and strontium
US6042652A (en) 1999-05-01 2000-03-28 P.K. Ltd Atomic layer deposition apparatus for depositing atomic layer on multiple substrates
JP2000087029A (en) 1998-06-03 2000-03-28 Planar Syst Inc Method for growing thin film electroluminescent structures
US6043177A (en) 1997-01-21 2000-03-28 University Technology Corporation Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition
US6051286A (en) 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
JP2000138094A (en) 1998-08-14 2000-05-16 Korea Electronics Telecommun Method of manufacturing PBX (X = S, Se) thin film, electroluminescent device including PBX, and method of manufacturing the same
US6062798A (en) 1996-06-13 2000-05-16 Brooks Automation, Inc. Multi-level substrate processing apparatus
US6067222A (en) * 1998-11-25 2000-05-23 Applied Materials, Inc. Substrate support apparatus and method for fabricating same
US6071808A (en) 1999-06-23 2000-06-06 Lucent Technologies Inc. Method of passivating copper interconnects in a semiconductor
US6084302A (en) 1995-12-26 2000-07-04 Micron Technologies, Inc. Barrier layer cladding around copper interconnect lines
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2000218445A (en) 1999-02-03 2000-08-08 Agency Of Ind Science & Technol Surface improvement of machine element component
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6113977A (en) 1996-09-11 2000-09-05 Planar International Oy Ltd. Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components
US6117244A (en) 1998-03-24 2000-09-12 Applied Materials, Inc. Deposition resistant lining for CVD chamber
WO2000054320A1 (en) 1999-03-11 2000-09-14 Genus, Inc. Radical-assisted sequential cvd
US6124203A (en) * 1998-12-07 2000-09-26 Advanced Micro Devices, Inc. Method for forming conformal barrier layers
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
US6130147A (en) 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
WO2000063957A1 (en) 1999-04-06 2000-10-26 Genitech, Inc. Method of forming a thin film
US6140238A (en) 1997-09-03 2000-10-31 National Semiconductor Corporation Self-aligned copper interconnect structure and method of manufacturing same
US6139700A (en) 1997-10-01 2000-10-31 Samsung Electronics Co., Ltd. Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device
US6140237A (en) 1997-06-16 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer
US6143659A (en) 1997-11-18 2000-11-07 Samsung Electronics, Co., Ltd. Method for manufacturing aluminum metal interconnection layer by atomic layer deposition method
US6144060A (en) 1997-07-31 2000-11-07 Samsung Electronics Co., Ltd. Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature
JP2000340883A (en) 1999-05-27 2000-12-08 Fujitsu Ltd Multi-wavelength oscillation optical semiconductor device
US6158446A (en) 1994-11-14 2000-12-12 Fsi International Ultra-low particle semiconductor cleaner
JP2000353666A (en) 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd Semiconductor thin film and manufacture thereof
WO2000079019A1 (en) 1999-06-24 2000-12-28 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
WO2000079576A1 (en) 1999-06-19 2000-12-28 Genitech, Inc. Chemical deposition reactor and method of forming a thin film using the same
US6174809B1 (en) 1997-12-31 2001-01-16 Samsung Electronics, Co., Ltd. Method for forming metal layer using atomic layer deposition
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
JP2001020075A (en) 1999-05-10 2001-01-23 Asm Microchemistry Oy Thin film manufacturing device
EP1077484A2 (en) 1999-08-16 2001-02-21 Applied Materials, Inc. Barrier layer for electroplating processes
WO2001015220A1 (en) 1999-08-24 2001-03-01 Asm America, Inc. Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
JP2001062244A (en) 1999-07-20 2001-03-13 Asm Microchemistry Oy Method and device for removing material from gas
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6206967B1 (en) 1997-12-02 2001-03-27 Applied Materials, Inc. Low resistivity W using B2H6 nucleation step
WO2001027346A1 (en) 1999-10-15 2001-04-19 Asm Microchemistry Oy Method of modifying source chemicals in an ald process
WO2001027347A1 (en) 1999-10-15 2001-04-19 Asm Microchemistry Oy Method of depositing transition metal nitride thin films
WO2001029280A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Deposition of transition metal carbides
WO2001029893A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
WO2001029891A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Conformal lining layers for damascene metallization
GB2355727A (en) 1999-10-06 2001-05-02 Samsung Electronics Co Ltd Atomic layer deposition method
US20010000866A1 (en) 1999-03-11 2001-05-10 Ofer Sneh Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
WO2001036702A1 (en) 1999-11-18 2001-05-25 Genitech Co., Ltd. Method of vaporizing liquid sources and apparatus therefor
WO2001040541A1 (en) 1999-12-03 2001-06-07 Asm Microchemistry Oy Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide
JP2001172767A (en) 1999-10-14 2001-06-26 Asm Microchemistry Oy Method of growing oxide thin film
JP2001189312A (en) 1999-10-25 2001-07-10 Motorola Inc Method of manufacturing semiconductor structure having metal oxide interface with silicon
US6270572B1 (en) 1998-08-07 2001-08-07 Samsung Electronics Co., Ltd. Method for manufacturing thin film using atomic layer deposition
US6271148B1 (en) 1997-04-23 2001-08-07 Applied Materials, Inc. Method for improved remote microwave plasma source for use with substrate processing system
JP2001217206A (en) 1999-12-08 2001-08-10 Samsung Electronics Co Ltd Metal layer forming method using atomic layer deposition and semiconductor device using the same
JP2001220287A (en) 2000-02-04 2001-08-14 Denso Corp Method and apparatus for thin film formation by atomic layer growth
JP2001220294A (en) 2000-02-04 2001-08-14 Denso Corp Method for forming film by atomic layer epitaxial growing method
JP2001240972A (en) 2000-02-29 2001-09-04 Denso Corp Glass substrate storage jig for cvd and ale system
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
WO2001066832A2 (en) 2000-03-07 2001-09-13 Asm America, Inc. Graded thin films
US6291876B1 (en) 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
JP2001254181A (en) 2000-01-06 2001-09-18 Tokyo Electron Ltd Film depositing apparatus and film depositing method
JP2001284042A (en) 2000-03-31 2001-10-12 Denso Corp Organic EL device
US20010031562A1 (en) 2000-02-22 2001-10-18 Ivo Raaijmakers Method of forming ultrathin oxide layer
US6306216B1 (en) 1999-07-15 2001-10-23 Moohan Co., Ltd. Apparatus for deposition of thin films on wafers through atomic layer epitaxial process
US20010034123A1 (en) 2000-04-20 2001-10-25 In-Sang Jeon Method of manufacturing a barrier metal layer using atomic layer deposition
US6316098B1 (en) 1998-03-27 2001-11-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
US20010042799A1 (en) 2000-02-16 2001-11-22 Apex Co. Ltd. Showerhead apparatus for radical-assisted deposition
JP2001328900A (en) 2000-05-15 2001-11-27 Denso Corp Method for forming thin film
GB2332980B (en) 1997-12-31 2002-06-12 Samsung Electronics Co Ltd A method for forming a conductive layer using an atomic layer deposition process
US6416822B1 (en) * 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20020094632A1 (en) * 2000-08-31 2002-07-18 Agarwal Vishnu K. Capacitor fabrication methods and capacitor constructions
US6428859B1 (en) * 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20020127336A1 (en) 2001-01-16 2002-09-12 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US6573150B1 (en) * 2000-10-10 2003-06-03 Applied Materials, Inc. Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors

Family Cites Families (174)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US626967A (en) * 1899-06-13 Transmission-gear for motor-vehicles
FI119941B (en) * 1999-10-15 2009-05-15 Asm Int Process for the preparation of nanolaminates
US6482262B1 (en) * 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
JPS589817Y2 (en) 1980-05-01 1983-02-22 コンビ株式会社 Inclination angle adjuster for protective frames for floating carriages, etc.
JPS58100419A (en) 1981-12-10 1983-06-15 Seiko Epson Corp Partial atomic layer epitaxial method
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
US4615905A (en) * 1982-09-24 1986-10-07 Sovonics Solar Systems, Inc. Method of depositing semiconductor films by free radical generation
US4664937A (en) * 1982-09-24 1987-05-12 Energy Conversion Devices, Inc. Method of depositing semiconductor films by free radical generation
JPS6119883A (en) 1984-07-06 1986-01-28 Asahi Chem Ind Co Ltd Composite structure
JPS6135847A (en) 1984-07-27 1986-02-20 Hitachi Ltd Method of manufacturing thin film
JPS6269508A (en) 1985-09-20 1987-03-30 Sumitomo Electric Ind Ltd Compound semiconductor device manufacturing method
JPS62141717A (en) 1985-12-16 1987-06-25 Fujitsu Ltd Atomic layer level zinc blende crystal growth method and device
JPS62167297A (en) 1986-01-16 1987-07-23 Nec Corp Epitaxial crystal
JPS62171999A (en) 1986-01-27 1987-07-28 Nippon Telegr & Teleph Corp <Ntt> Epitaxy of iii-v compound semiconductor
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4747367A (en) * 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
JPS6362313A (en) 1986-09-03 1988-03-18 Fujitsu Ltd Manufacture of semiconductor device
JPS6385098A (en) 1986-09-26 1988-04-15 Nec Corp Vapor growth method for iii-v compound semiconductor
JPS6390833A (en) 1986-10-03 1988-04-21 Nec Corp Manufacture of compound thin film of group ii and vi elements
JPS63227011A (en) * 1987-03-17 1988-09-21 Fujitsu Ltd chemical vapor deposition equipment
US4828224A (en) * 1987-10-15 1989-05-09 Epsilon Technology, Inc. Chemical vapor deposition system
US4846102A (en) * 1987-06-24 1989-07-11 Epsilon Technology, Inc. Reaction chambers for CVD systems
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US5244694A (en) * 1987-06-24 1993-09-14 Advanced Semiconductor Materials America, Inc. Apparatus for improving the reactant gas flow in a reaction chamber
US5096534A (en) * 1987-06-24 1992-03-17 Epsilon Technology, Inc. Method for improving the reactant gas flow in a reaction chamber
JPS649896U (en) 1987-07-08 1989-01-19
JPS649897U (en) 1987-07-09 1989-01-19
US5092728A (en) * 1987-10-15 1992-03-03 Epsilon Technology, Inc. Substrate loading apparatus for a CVD process
US5156521A (en) * 1987-10-15 1992-10-20 Epsilon Technology, Inc. Method for loading a substrate into a GVD apparatus
US5435682A (en) * 1987-10-15 1995-07-25 Advanced Semiconductor Materials America, Inc. Chemical vapor desposition system
JPH01103982A (en) 1987-10-16 1989-04-21 Nec Corp Production of single crystal of group iii-v compound semiconductor
JPH01117017A (en) 1987-10-29 1989-05-09 Fujitsu Ltd GaAs epitaxial growth method on Si substrate
JPH01143221A (en) 1987-11-27 1989-06-05 Nec Corp Manufacture of insulating thin film
JP2828979B2 (en) 1987-12-11 1998-11-25 株式会社日立製作所 Crystal growth method
JPH01103996U (en) 1987-12-25 1989-07-13
JP2736655B2 (en) 1988-06-30 1998-04-02 富士通株式会社 Compound semiconductor crystal growth method
JPH0351278Y2 (en) 1988-07-05 1991-11-01
JPH0217634A (en) 1988-07-06 1990-01-22 Matsushita Electric Ind Co Ltd Method of doping impurity to semiconductor
JPH0263115A (en) 1988-08-29 1990-03-02 Nec Corp Selective growth of thin film
JP2712367B2 (en) 1988-09-09 1998-02-10 富士通株式会社 Method and apparatus for forming thin film
JPH02129913A (en) 1988-11-09 1990-05-18 Fujitsu Ltd Manufacturing method of semiconductor device
JPH0274029U (en) 1988-11-28 1990-06-06
JP2934253B2 (en) 1989-03-02 1999-08-16 富士通テン株式会社 Knocking control device for internal combustion engine
NL8900544A (en) * 1989-03-06 1990-10-01 Asm Europ TREATMENT SYSTEM, TREATMENT VESSEL AND METHOD FOR TREATING A SUBSTRATE.
KR0163409B1 (en) 1989-03-15 1999-01-15 마이클 흄 케니드 Apparatus for forming a pipe from a sheet metal plate
JP2895909B2 (en) 1989-04-18 1999-05-31 東京エレクトロン株式会社 Plasma processing method
JPH0319211A (en) 1989-06-15 1991-01-28 Fujitsu Ltd Chemical vapor deposition device
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
JPH0323299A (en) 1989-06-20 1991-01-31 Fujitsu Ltd Growth method for compound semiconductor crystal
JPH0323294A (en) 1989-06-20 1991-01-31 Fujitsu Ltd Compound semiconductor crystal growth method
JPH0322569A (en) 1989-06-20 1991-01-30 Fujitsu Ltd Manufacturing method of quantum interference transistor
JP2789689B2 (en) 1989-07-12 1998-08-20 富士通株式会社 Method for manufacturing semiconductor device
US5254170A (en) * 1989-08-07 1993-10-19 Asm Vt, Inc. Enhanced vertical thermal reactor system
JPH0370124A (en) 1989-08-09 1991-03-26 Fujitsu Ltd Manufacture of iii-v compound semiconductor device having method structure
JPH0431391A (en) 1990-05-23 1992-02-03 Nec Corp Epitaxial growth
JPH04111418A (en) 1990-08-31 1992-04-13 Nippon Telegr & Teleph Corp <Ntt> Crystal growth and crystal growth apparatus
JPH0529228A (en) 1990-08-31 1993-02-05 Nippon Telegr & Teleph Corp <Ntt> Atomic layer crystal deposition method and device
JPH04132214A (en) 1990-09-25 1992-05-06 Nippon Telegr & Teleph Corp <Ntt> Manufacture of compound semiconductor thin film
JPH04132681A (en) 1990-09-26 1992-05-06 Sumitomo Electric Ind Ltd Device for epitaxial growth of compound semiconductor
JPH0547665A (en) 1991-08-12 1993-02-26 Fujitsu Ltd Vapor growth method
JPH0547668A (en) 1991-08-20 1993-02-26 Fujitsu Ltd Crystal growth method for compound semiconductor
JPH0574717A (en) 1991-09-11 1993-03-26 Fujitsu Ltd Compound semiconductor crystal growth method
JPH0574724A (en) 1991-09-12 1993-03-26 Toppan Printing Co Ltd Method for growth of atomic layer of aluminum compound
DE4132558C1 (en) * 1991-09-30 1992-12-03 Secon Halbleiterproduktionsgeraete Ges.M.B.H., Wien, At
JPH0645606A (en) 1992-07-22 1994-02-18 Fujitsu Ltd Manufacture of thin-film transistor matrix
US5378660A (en) * 1993-02-12 1995-01-03 Applied Materials, Inc. Barrier layers and aluminum contacts
JPH0770752A (en) 1993-09-01 1995-03-14 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Method for forming oxide superconductor
JPH0786269A (en) 1993-09-10 1995-03-31 Fujitsu Ltd Alumina film forming method and thin film transistor manufacturing method using the same
US6155198A (en) * 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
US6699530B2 (en) * 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US6251758B1 (en) * 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
US5662470A (en) * 1995-03-31 1997-09-02 Asm International N.V. Vertical furnace
JP3776480B2 (en) * 1995-06-01 2006-05-17 大日本印刷株式会社 Protective layer thermal transfer film and printed matter
KR100207467B1 (en) * 1996-02-29 1999-07-15 윤종용 Method of manufacturing capacitors in semiconductor devices
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
AUPO129096A0 (en) 1996-07-26 1996-08-22 Boc Gases Australia Limited Oxygen dissolver for pipelines or pipe outlets
JP3901252B2 (en) 1996-08-13 2007-04-04 キヤノンアネルバ株式会社 Chemical vapor deposition equipment
JPH1089683A (en) * 1996-09-11 1998-04-10 Uindomiru Kk Internal combustion gas lighter
US6190966B1 (en) * 1997-03-25 2001-02-20 Vantis Corporation Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration
US6387805B2 (en) 1997-05-08 2002-05-14 Applied Materials, Inc. Copper alloy seed layer for copper metallization
JP4097747B2 (en) 1997-08-07 2008-06-11 株式会社アルバック Barrier film formation method
JPH11135438A (en) * 1997-10-28 1999-05-21 Nippon Asm Kk Semiconductor plasma processing apparatus
US6280563B1 (en) * 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6297147B1 (en) * 1998-06-05 2001-10-02 Applied Materials, Inc. Plasma treatment for ex-situ contact fill
US6218302B1 (en) * 1998-07-21 2001-04-17 Motorola Inc. Method for forming a semiconductor device
US6117769A (en) * 1998-08-11 2000-09-12 Advanced Micro Devices, Inc. Pad structure for copper interconnection and its formation
CN1307211C (en) * 1998-10-27 2007-03-28 伊斯曼化学公司 Olefine polymerizing process, polytene, and film and products made therefrom
US6204204B1 (en) * 1999-04-01 2001-03-20 Cvc Products, Inc. Method and apparatus for depositing tantalum-based thin films with organmetallic precursor
TW593733B (en) * 1999-04-27 2004-06-21 Tokyo Electron Ltd CVD TaN plug formation from tantalum halide precursors
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6432819B1 (en) 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
JP2001144089A (en) 1999-11-11 2001-05-25 Sony Corp Method of manufacturing semiconductor device
US6780704B1 (en) * 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
US6503330B1 (en) * 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) * 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US6436819B1 (en) * 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
US6743473B1 (en) * 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US6759325B2 (en) * 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US6482733B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6620723B1 (en) * 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6936538B2 (en) * 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US6551929B1 (en) * 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6818250B2 (en) 2000-06-29 2004-11-16 The Regents Of The University Of Colorado Method for forming SIO2 by chemical vapor deposition at room temperature
US6458416B1 (en) * 2000-07-19 2002-10-01 Micron Technology, Inc. Deposition methods
US6455421B1 (en) * 2000-07-31 2002-09-24 Applied Materials, Inc. Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
US6420230B1 (en) * 2000-08-31 2002-07-16 Micron Technology, Inc. Capacitor fabrication methods and capacitor constructions
US6428847B1 (en) 2000-10-16 2002-08-06 Primaxx, Inc. Vortex based CVD reactor
US6689220B1 (en) * 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
US6765178B2 (en) * 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) * 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) * 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) * 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6939579B2 (en) * 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6734020B2 (en) * 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6596643B2 (en) * 2001-05-07 2003-07-22 Applied Materials, Inc. CVD TiSiN barrier for copper integration
DE10128573A1 (en) 2001-06-13 2003-01-02 Infineon Technologies Ag Prevent unwanted external detection of operations in integrated digital circuits
US6861334B2 (en) * 2001-06-21 2005-03-01 Asm International, N.V. Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition
US7211144B2 (en) * 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) * 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
JP4938962B2 (en) * 2001-09-14 2012-05-23 エーエスエム インターナショナル エヌ．ヴェー． Metal nitride deposition by ALD using gettering reactant
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6797108B2 (en) 2001-10-05 2004-09-28 Applied Materials, Inc. Apparatus and method for evenly flowing processing gas onto a semiconductor wafer
US6500761B1 (en) * 2001-10-24 2002-12-31 Tokyo Electron Limited Method for improving the adhesion and durability of CVD tantalum and tantalum nitride modulated films by plasma treatment
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780789B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
US20080102208A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US20080102203A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
TWI253478B (en) * 2001-11-14 2006-04-21 Mitsubishi Heavy Ind Ltd Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US6773507B2 (en) * 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6729824B2 (en) * 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) * 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US7175713B2 (en) * 2002-01-25 2007-02-13 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6911391B2 (en) * 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) * 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) * 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) * 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) * 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6875271B2 (en) * 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US7910165B2 (en) * 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7041335B2 (en) * 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US6955211B2 (en) * 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7066194B2 (en) * 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US6772072B2 (en) * 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
US7244683B2 (en) * 2003-01-07 2007-07-17 Applied Materials, Inc. Integration of ALD/CVD barriers with porous low k materials
US6994319B2 (en) * 2003-01-29 2006-02-07 Applied Materials, Inc. Membrane gas valve for pulsing a gas
US6868859B2 (en) * 2003-01-29 2005-03-22 Applied Materials, Inc. Rotary gas valve for pulsing a gas
US7012499B2 (en) * 2003-06-02 2006-03-14 International Business Machines Corporation Method of fabrication of thin film resistor with 0 TCR
KR20060079144A (en) * 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 Atomic Layer Deposition of Barrier Materials
US7378129B2 (en) * 2003-08-18 2008-05-27 Micron Technology, Inc. Atomic layer deposition methods of forming conductive metal nitride comprising layers
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
KR20070108918A (en) * 2005-02-22 2007-11-13 에이에스엠 아메리카, 인코포레이티드 Plasma Pretreatment of Surfaces for Atomic Layer Deposition
US8993055B2 (en) * 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
CN101448977B (en) 2005-11-04 2010-12-15 应用材料股份有限公司 Apparatus and process for plasma-enhanced atomic layer deposition
US7632377B2 (en) * 2006-01-24 2009-12-15 United Microelectronics Corp. Dry etching apparatus capable of monitoring motion of WAP ring thereof
DE102006014996A1 (en) 2006-03-31 2007-10-04 Robert Bosch Gmbh Method for operating an Otto engine with direct fuel injection comprises passing and leaving residual gas in the combustion chamber using an internal and external exhaust gas re-circulating unit

Patent Citations (368)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4058430A (en) 1974-11-29 1977-11-15 Tuomo Suntola Method for producing compound thin films
US4413022A (en) 1979-02-28 1983-11-01 Canon Kabushiki Kaisha Method for performing growth of compound thin films
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
JPS6135847Y2 (en) 1980-11-05 1986-10-18
JPS5898917U (en) 1981-12-26 1983-07-05 株式会社フジ医療器 Arm stretcher attached to chair-type pine surgery machine
JPS58100419U (en) 1981-12-26 1983-07-08 株式会社　ブレスト工業研究所 Conduit support for slab concrete pouring
JPS649895B2 (en) 1982-02-22 1989-02-20 Nitsushin Seiko Kk
US4486487A (en) 1982-05-10 1984-12-04 Oy Lohja Ab Combination film, in particular for thin film electroluminescent structures
JPH0263115B2 (en) 1983-06-29 1990-12-27 Mtu Friedrichshafen Gmbh
JPS6362313B2 (en) 1983-07-01 1988-12-01
JPS649896B2 (en) 1983-08-03 1989-02-20 Hitachi Ltd
JPH0212814B2 (en) 1983-08-05 1990-03-28 Monopurasuto Sa
JPS6065712A (en) 1983-09-20 1985-04-15 Toshiba Corp Formation of silicon oxide coating film
JPH0214513Y2 (en) 1983-10-29 1990-04-19
JPS649897B2 (en) 1984-01-31 1989-02-20 Topura Kk
US5443033A (en) 1984-07-26 1995-08-22 Research Development Corporation Of Japan Semiconductor crystal growth method
US5693139A (en) 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US4806321A (en) 1984-07-26 1989-02-21 Research Development Corporation Of Japan Use of infrared radiation and an ellipsoidal reflection mirror
US5294286A (en) 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
US4975252A (en) 1984-07-26 1990-12-04 Junichi Nishizawa Semiconductor crystal growth apparatus
JPS61210623A (en) 1985-03-15 1986-09-18 Sony Corp Manufacture of semiconductor device
JPH0547666Y2 (en) 1985-03-15 1993-12-15
US5250148A (en) 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
JPH0217634Y2 (en) 1985-05-28 1990-05-17
JPS6291495A (en) 1985-10-15 1987-04-25 Nec Corp Vapor growth method for thin semiconductor film
JPH0319211Y2 (en) 1985-10-17 1991-04-23
JPS6269508U (en) 1985-10-23 1987-05-01
US4829022A (en) 1985-12-09 1989-05-09 Nippon Telegraph And Telephone Corporation Method for forming thin films of compound semiconductors by flow rate modulation epitaxy
JPH0323299Y2 (en) 1985-12-27 1991-05-21
JPH0574717B2 (en) 1986-02-14 1993-10-19 Fuji Electric Co Ltd
JPH0370124B2 (en) 1986-02-21 1991-11-06 Ebara Mfg
JPS62141717U (en) 1986-02-28 1987-09-07
JPH0348421B2 (en) 1986-03-11 1991-07-24 Yazaki Corp
JPS62232919A (en) 1986-04-02 1987-10-13 Rikagaku Kenkyusho Crystal growth
JPS62171999U (en) 1986-04-09 1987-10-31
JPS62167297U (en) 1986-04-14 1987-10-23
US4917556A (en) 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
JPH0323294Y2 (en) 1986-05-09 1991-05-21
US4838983A (en) 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4767494A (en) 1986-07-04 1988-08-30 Nippon Telegraph & Telephone Corporation Preparation process of compound semiconductor
JPH0431391Y2 (en) 1986-07-15 1992-07-28
US4960720A (en) 1986-08-26 1990-10-02 Masafumi Shimbo Method of growing compound semiconductor thin film using multichamber smoothing process
US5246536A (en) 1986-09-08 1993-09-21 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
US4834831A (en) 1986-09-08 1989-05-30 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
JPH0322569Y2 (en) 1986-10-24 1991-05-16
JPS6385098U (en) 1986-11-20 1988-06-03
US4859625A (en) 1986-11-22 1989-08-22 Research Development Corporation of Japan, Junichi Nishizawa and Oki Electric Industry Co., Ltd. Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy
JPS6390833U (en) 1986-12-03 1988-06-13
US4838993A (en) 1986-12-04 1989-06-13 Seiko Instruments Inc. Method of fabricating MOS field effect transistor
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5882165A (en) 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5923985A (en) 1987-01-05 1999-07-13 Seiko Instruments Inc. MOS field effect transistor and its manufacturing method
US4813846A (en) 1987-02-13 1989-03-21 Leybold-Heraeus Gmbh Inserting device for vacuum apparatus
JPS63222420A (en) 1987-03-12 1988-09-16 Nec Corp Epitaxial growth method for atomic layer of iii-v compound semiconductor
JPS63222421A (en) 1987-03-12 1988-09-16 Nec Corp Epitaxial growth method for atomic layer of iii-v compound semiconductor
JPS63227007A (en) 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd Vapor growth method
US4845049A (en) 1987-03-27 1989-07-04 Nec Corporation Doping III-V compound semiconductor devices with group VI monolayers using ALE
US4861417A (en) 1987-03-27 1989-08-29 Fujitsu Limited Method of growing group III-V compound semiconductor epitaxial layer
JPS63252420A (en) 1987-04-09 1988-10-19 Nec Corp Compound semiconductor crystal and manufacture thereof
JPS63266814A (en) 1987-04-24 1988-11-02 Nec Corp Forming method for al iii-v compound semiconductor thin film
JPH0574724B2 (en) 1987-04-27 1993-10-19 Fischer Artur Werke Gmbh
JPH0431396Y2 (en) 1987-05-14 1992-07-28
US5441703A (en) 1987-06-30 1995-08-15 Aixtron Gmbh Gas inlet for a plurality of reactant gases into reaction vessel
US5348911A (en) 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
US4840921A (en) 1987-07-01 1989-06-20 Nec Corporation Process for the growth of III-V group compound semiconductor crystal on a Si substrate
US4859627A (en) 1987-07-01 1989-08-22 Nec Corporation Group VI doping of III-V semiconductors during ALE
JPS6437832U (en) 1987-09-02 1989-03-07
JPS6482671A (en) 1987-09-25 1989-03-28 Nec Corp Manufacture of mis field-effect transistor
JPS6482615A (en) 1987-09-25 1989-03-28 Nec Corp Manufacture of semiconductor element
JPS6482676A (en) 1987-09-25 1989-03-28 Nec Corp Iii-v compound semiconductor field-effect transistor and manufacture thereof
JPS6482617A (en) 1987-09-25 1989-03-28 Nec Corp Method of epitaxial growth of atomic layer of regular mixed crystal
US4876218A (en) 1987-09-29 1989-10-24 Oy Nokia Ab Method of growing GaAs films on Si or GaAs substrates using ale
JPS6490524A (en) 1987-10-01 1989-04-07 Nec Corp Manufacture of semiconductor device
JPH01103996A (en) 1987-10-16 1989-04-21 Nec Corp Vapor growth method for compound semiconductor
JPH0547665Y2 (en) 1987-10-23 1993-12-15
JPH01143233A (en) 1987-11-27 1989-06-05 Nec Corp Manufacture of semiconductor element
US4993357A (en) 1987-12-23 1991-02-19 Cs Halbleiter -Und Solartechnologie Gmbh Apparatus for atomic layer epitaxial growth
JPH01103982U (en) 1987-12-28 1989-07-13
FR2626110A1 (en) 1988-01-19 1989-07-21 Thomson Csf Process for producing a layer of a superconductive material by epitaxy
US5166092A (en) 1988-01-28 1992-11-24 Fujitsu Limited Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
JPH01117017U (en) 1988-01-30 1989-08-08
JPH0645606Y2 (en) 1988-03-07 1994-11-24 マツダ株式会社 Engine oil return device
JPH01236657A (en) 1988-03-17 1989-09-21 Toshiba Corp Semiconductor device and manufacture thereof
JPH01143221U (en) 1988-03-25 1989-10-02
JPH01245512A (en) 1988-03-28 1989-09-29 Nippon Telegr & Teleph Corp <Ntt> Formation of iii-v compound semiconductor by epitaxial growth
JPH01154511U (en) 1988-04-13 1989-10-24
JPH01264218A (en) 1988-04-15 1989-10-20 Fujitsu Ltd Atomic layer epitaxial growth
JPH01270593A (en) 1988-04-21 1989-10-27 Fujitsu Ltd Compound semiconductor layer formation method
JPH01272108A (en) 1988-04-25 1989-10-31 Nippon Telegr & Teleph Corp <Ntt> Growth of compound semiconductor
US5130269A (en) 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
US5300186A (en) 1988-04-27 1994-04-05 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
US5484664A (en) 1988-04-27 1996-01-16 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate
JPH01290222A (en) 1988-05-18 1989-11-22 Fujitsu Ltd Semiconductor vapor phase growth method
JPH01290221A (en) 1988-05-18 1989-11-22 Fujitsu Ltd Semiconductor vapor phase growth method
JPH01296673A (en) 1988-05-25 1989-11-30 Nec Corp Iii-v compound semiconductor device
JPH0770752B2 (en) 1988-05-30 1995-07-31 日本電気株式会社 Quantum interference device
JPH01303770A (en) 1988-06-01 1989-12-07 Oki Electric Ind Co Ltd Manufacture of superconductive base transistor
JPH01305894A (en) 1988-06-03 1989-12-11 Matsushita Electric Ind Co Ltd Thin film crystal growth device and growth method
US5439876A (en) 1988-06-03 1995-08-08 International Business Machines Corporation Method of making artificial layered high Tc superconductors
EP0344352A1 (en) 1988-06-03 1989-12-06 International Business Machines Corporation Method for making artificial layered high-Tc superconductors
JPH01313927A (en) 1988-06-14 1989-12-19 Fujitsu Ltd Compound-semiconductor crystal growth method
US4927670A (en) 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US5234561A (en) 1988-08-25 1993-08-10 Hauzer Industries Bv Physical vapor deposition dual coating process
WO1990002216A1 (en) 1988-08-25 1990-03-08 Vac-Tec Systems, Inc. Physical vapor deposition dual coating apparatus and process
JPH0274029A (en) 1988-09-09 1990-03-14 Fujitsu Ltd Thin film forming method and device
US4931132A (en) 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
JPH02106822A (en) 1988-10-14 1990-04-18 Hitachi Ltd Thin film forming method and thin film forming apparatus
JPH0274587U (en) 1988-11-25 1990-06-07
JPH02162717A (en) 1988-12-15 1990-06-22 Fujitsu Ltd How to form quantum wires
JPH02172895A (en) 1988-12-22 1990-07-04 Nec Corp Method for growing semiconductor crystal
US5013683A (en) 1989-01-23 1991-05-07 The Regents Of The University Of California Method for growing tilted superlattices
JPH02196092A (en) 1989-01-25 1990-08-02 Sumitomo Electric Ind Ltd Atomic layer epitaxial growth device of compound semiconductor
JPH02203517A (en) 1989-02-01 1990-08-13 Nec Corp Selective vapor-phase epitaxy of iii-v compound semiconductor
JPH02230690A (en) 1989-03-03 1990-09-13 Fujitsu Ltd Thin film el panel
JPH02230722A (en) 1989-03-03 1990-09-13 Nec Corp Vapor growth method of compound semiconductor
US5374570A (en) 1989-03-17 1994-12-20 Fujitsu Limited Method of manufacturing active matrix display device using insulation layer formed by the ale method
JPH02246161A (en) 1989-03-17 1990-10-01 Fujitsu Ltd Thin-film transistor
JPH02129913U (en) 1989-03-31 1990-10-26
JPH02264491A (en) 1989-04-04 1990-10-29 Mitsubishi Electric Corp Manufacture of distributed feedback type semiconductor laser
JPH0547668Y2 (en) 1989-04-14 1993-12-15
JPH02283084A (en) 1989-04-25 1990-11-20 Fujitsu Ltd Manufacturing method of semiconductor laser
JPH02304916A (en) 1989-05-19 1990-12-18 Nec Corp Vapor growing device for iii-v compound semiconductor
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5527733A (en) 1989-07-27 1996-06-18 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
EP0429270A2 (en) 1989-11-20 1991-05-29 Kokusai Electric Co., Ltd. Continuous etching method and apparatus therefor
US5925574A (en) 1989-12-01 1999-07-20 Seiko Instruments Inc. Method of producing a bipolar transistor
JPH03185716A (en) 1989-12-14 1991-08-13 Fujitsu Ltd Method of growing compound semiconductor crystal
JPH03208885A (en) 1990-01-09 1991-09-12 Tdk Corp Method for depositing oxide at atomic layer level by vapor growth method
US5290748A (en) 1990-01-16 1994-03-01 Neste Oy Polymerization catalyst for olefines
WO1991010510A1 (en) 1990-01-16 1991-07-25 Neste Oy Process and apparatus for preparing heterogeneous catalysts
US5338389A (en) 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
US5296403A (en) 1990-01-31 1994-03-22 Research Development Corp. Of Japan Method of manufacturing a static induction field-effect transistor
JPH03234025A (en) 1990-02-09 1991-10-18 Fujitsu Ltd Method of forming insulating thin film
EP0442490A1 (en) 1990-02-14 1991-08-21 Sumitomo Electric Industries, Ltd. Method for producing single crystal boron nitride film
US5316615A (en) 1990-03-23 1994-05-31 International Business Machines Corporation Surfactant-enhanced epitaxy
JPH03286531A (en) 1990-04-02 1991-12-17 Kawasaki Steel Corp Formation of silicon oxide film
JPH03286522A (en) 1990-04-03 1991-12-17 Nec Corp Growth method of si crystal
US5082798A (en) 1990-04-18 1992-01-21 Mitsubishi Denki Kabushiki Kaisha Crystal growth method
US5173474A (en) 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
JPH0431396A (en) 1990-05-24 1992-02-03 Fujitsu Ltd Semiconductor crystal growth method
US5091320A (en) 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
JPH04212411A (en) 1990-06-19 1992-08-04 Nec Corp Epitaxial growth method
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5281274A (en) 1990-06-22 1994-01-25 The United States Of America As Represented By The Secretary Of The Navy Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors
JPH04100292A (en) 1990-08-20 1992-04-02 Fujitsu Ltd semiconductor laser
US5205077A (en) 1990-08-31 1993-04-27 Peter Wolters Ag Apparatus for controlling operation of a lapping, honing or polishing machine
US5483919A (en) 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
US5085885A (en) 1990-09-10 1992-02-04 University Of Delaware Plasma-induced, in-situ generation, transport and use or collection of reactive precursors
JPH04151822A (en) 1990-10-15 1992-05-25 Toshiba Corp Vapor growth method for compound semiconductor organic metal
JPH0344967Y2 (en) 1990-10-17 1991-09-24
JPH04162418A (en) 1990-10-24 1992-06-05 Fujitsu Ltd Chemical vapor growth method
US5221449A (en) 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
JPH0529228Y2 (en) 1990-10-31 1993-07-27
JPH04175299A (en) 1990-11-09 1992-06-23 Fujitsu Ltd Compound semiconductor crystal growth and compound semiconductor device
JPH04186824A (en) 1990-11-21 1992-07-03 Fujitsu Ltd Semiconductor substrate and its manufacturing method
JPH0786269B2 (en) 1990-11-30 1995-09-20 住友ゴム工業株式会社 Tool for construction of sinking floor coating
US5286296A (en) 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
JPH04132214U (en) 1991-02-01 1992-12-07 ポツプリベツト・フアスナー株式会社 Welding stud with cap
JPH04260696A (en) 1991-02-08 1992-09-16 Fujitsu Ltd Method for manufacturing compound semiconductor crystal
JPH04273120A (en) 1991-02-27 1992-09-29 Nec Corp Region-selective crystal growth method
JPH04285167A (en) 1991-03-15 1992-10-09 Limes:Kk Method for continuously forming thin film
JPH04111418U (en) 1991-03-19 1992-09-28 三菱重工業株式会社 twin screw extruder
US5705224A (en) 1991-03-20 1998-01-06 Kokusai Electric Co., Ltd. Vapor depositing method
JPH04291916A (en) 1991-03-20 1992-10-16 Kokusai Electric Co Ltd Vapor phase growth method and apparatus
JPH04325500A (en) 1991-04-26 1992-11-13 Sanyo Electric Co Ltd Method for controlling structure of crystalline surface
JPH04328874A (en) 1991-04-27 1992-11-17 Sanyo Electric Co Ltd Electrostatic induction transistor and manufacture thereof
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
JPH04132681U (en) 1991-05-30 1992-12-09 日本電気株式会社 Magnetic disk assembly hand mechanism
US5270247A (en) 1991-07-12 1993-12-14 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
WO1993002111A1 (en) 1991-07-16 1993-02-04 Neste Oy Process for preparing a polymerization catalyst by vapourizing chromium acetylacetonate
JPH05102189A (en) 1991-08-13 1993-04-23 Fujitsu Ltd Thin film forming method, silicon thin film and silicon thin film transistor forming method
JPH05251339A (en) 1991-08-14 1993-09-28 Fujitsu Ltd Semiconductor substrate and manufacturing method thereof
US6001669A (en) 1991-09-09 1999-12-14 Philips Electronics North America Corporation Method for producing II-VI compound semiconductor epitaxial layers having low defects
US5637530A (en) 1991-09-09 1997-06-10 U.S. Philips Corporation II-VI compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same
JPH05234899A (en) 1991-09-17 1993-09-10 Hitachi Ltd Atomic layer epitaxy system
US5311055A (en) 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
US5254207A (en) 1991-11-30 1993-10-19 Research Development Corporation Of Japan Method of epitaxially growing semiconductor crystal using light as a detector
US5336324A (en) 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
JPH05160152A (en) 1991-12-05 1993-06-25 Fujitsu Ltd Manufacture of film transistor
US5580380A (en) 1991-12-20 1996-12-03 North Carolina State University Method for forming a diamond coated field emitter and device produced thereby
JPH05175143A (en) 1991-12-26 1993-07-13 Fujitsu Ltd Manufacture of compound semiconductor device
JPH05175145A (en) 1991-12-26 1993-07-13 Fujitsu Ltd Crystal growth method
JPH05182906A (en) 1991-12-27 1993-07-23 Sumitomo Electric Ind Ltd Heteroepitaxial growth method
JPH05186295A (en) 1992-01-13 1993-07-27 Fujitsu Ltd Crystal growth method
JPH05206036A (en) 1992-01-30 1993-08-13 Rikagaku Kenkyusho Film formation method and film formation apparatus
US5256244A (en) 1992-02-10 1993-10-26 General Electric Company Production of diffuse reflective coatings by atomic layer epitaxy
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
JPH05235047A (en) 1992-02-19 1993-09-10 Nec Corp Manufacture of field-effect transistor
JPH05270997A (en) 1992-03-19 1993-10-19 Fujitsu Ltd Atomic layer epitaxy apparatus and atomic layer epitaxy method
JPH05291152A (en) 1992-04-15 1993-11-05 Hitachi Ltd X-ray analyzer and semiconductor manufacturing apparatus using the same
US5458084A (en) 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
JPH05304334A (en) 1992-04-28 1993-11-16 Nec Corp Fabrication of semiconductor laser
US5395791A (en) 1992-05-22 1995-03-07 Minnesota Mining And Manufacturing Company Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
JPH05343685A (en) 1992-06-05 1993-12-24 Fujitsu Ltd Manufacture of silicon thin film transistor
US5278435A (en) 1992-06-08 1994-01-11 Apa Optics, Inc. High responsivity ultraviolet gallium nitride detector
JPH05343327A (en) 1992-06-12 1993-12-24 Fujitsu Ltd Film-forming method
FR2692597A1 (en) 1992-06-18 1993-12-24 Mikrokemia Oy Introducing liq. phase reactants into reaction chamber - by passing liq. into vaporiser contg. microporous packing then transporting vapour to reactor using carrier gas
JPH06291048A (en) 1992-07-02 1994-10-18 Nissin Electric Co Ltd Thin-film formation method
US5316793A (en) 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
JPH06224138A (en) 1992-07-27 1994-08-12 Texas Instr Inc <Ti> Atom layer epitaxy device
US5469806A (en) 1992-08-21 1995-11-28 Nec Corporation Method for epitaxial growth of semiconductor crystal by using halogenide
US5601651A (en) 1992-09-17 1997-02-11 Fujitsu Limited Flow control valve for use in fabrication of semiconductor devices
JPH06132236A (en) 1992-10-20 1994-05-13 Fujitsu Ltd Method for manufacturing semiconductor device
US5532511A (en) 1992-10-23 1996-07-02 Research Development Corp. Of Japan Semiconductor device comprising a highspeed static induction transistor
US5455072A (en) 1992-11-18 1995-10-03 Bension; Rouvain M. Initiation and bonding of diamond and other thin films
US5856219A (en) 1992-12-02 1999-01-05 Matsushita Electric Industrial Co., Ltd. Method of fabricating a high-density dynamic random-access memory
JPH06177381A (en) 1992-12-03 1994-06-24 Fujitsu Ltd Thin film transistor matrix and manufacturing method thereof
JPH06196809A (en) 1992-12-22 1994-07-15 Mitsubishi Electric Corp Semiconductor optical device and manufacture thereof
JPH06222388A (en) 1993-01-28 1994-08-12 Fujitsu Ltd Production of thin film transistor matrix
US5674786A (en) 1993-01-28 1997-10-07 Applied Materials, Inc. Method of heating and cooling large area glass substrates
JPH06230421A (en) 1993-02-02 1994-08-19 Fujitsu Ltd Method of manufacturing thin film transistor matrix
JPH06252057A (en) 1993-02-24 1994-09-09 Toshiba Corp Manufacture of semiconductor device
US5503875A (en) 1993-03-18 1996-04-02 Tokyo Electron Limited Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily
US5438952A (en) 1993-03-24 1995-08-08 Fujitsu Limited Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor layer
US5443647A (en) 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
US5540783A (en) 1993-05-28 1996-07-30 Martin Marietta Energy Systems, Inc. Apparatus for externally controlled closed-loop feedback digital epitaxy
US5330610A (en) 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback
US5521126A (en) 1993-06-25 1996-05-28 Nec Corporation Method of fabricating semiconductor devices
US6130147A (en) 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
US5730802A (en) 1994-05-20 1998-03-24 Sharp Kabushiki Kaisha Vapor growth apparatus and vapor growth method capable of growing good productivity
US5866213A (en) 1994-06-03 1999-02-02 Tokyo Electron Limited Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5749974A (en) 1994-07-15 1998-05-12 Shin-Etsu Handotai Co., Ltd. Method of chemical vapor deposition and reactor therefor
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
US5695564A (en) 1994-08-19 1997-12-09 Tokyo Electron Limited Semiconductor processing system
US5641984A (en) 1994-08-19 1997-06-24 General Electric Company Hermetically sealed radiation imager
US5707880A (en) 1994-08-19 1998-01-13 General Electric Company Hermetically sealed radiation imager
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5644128A (en) 1994-08-25 1997-07-01 Ionwerks Fast timing position sensitive detector
JPH08181076A (en) 1994-10-26 1996-07-12 Fuji Xerox Co Ltd Thin film forming method and device
US6158446A (en) 1994-11-14 2000-12-12 Fsi International Ultra-low particle semiconductor cleaner
US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
US5616181A (en) 1994-11-24 1997-04-01 Mitsubishi Denki Kabushiki Kaisha MBE apparatus and gas branch piping apparatus
WO1996017107A1 (en) 1994-11-28 1996-06-06 Mikrokemia Oy Method and apparatus for growing thin films
US5855680A (en) 1994-11-28 1999-01-05 Neste Oy Apparatus for growing thin films
US6015590A (en) 1994-11-28 2000-01-18 Neste Oy Method for growing thin films
US5711811A (en) 1994-11-28 1998-01-27 Mikrokemia Oy Method and equipment for growing thin films
WO1996018756A1 (en) 1994-12-16 1996-06-20 Nkt Research Center A/S A PA-CVD PROCESS FOR DEPOSITION OF A SOLID METAL-CONTAINING FILM ONTO A SUBSTRATE CONTAINING AT LEAST 50 % of Fe or WC
JPH08245291A (en) 1995-03-10 1996-09-24 Sumitomo Electric Ind Ltd Method for growing III-V compound semiconductor crystal
JPH08264530A (en) 1995-03-20 1996-10-11 Fujitsu Ltd Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
JPH08283336A (en) 1995-04-20 1996-10-29 Toagosei Co Ltd Method of stabilizing hydroxylated polymer
US5609689A (en) 1995-06-09 1997-03-11 Tokyo Electron Limited Vacuum process apparaus
US6013575A (en) 1995-07-07 2000-01-11 Kabushiki Kaisha Toshiba Method of selectively depositing a metal film
US5788447A (en) 1995-08-05 1998-08-04 Kokusai Electric Co., Ltd. Substrate processing apparatus
US5947710A (en) 1995-12-07 1999-09-07 Carrier Corporation Rotary compressor with reduced lubrication sensitivity
US6084302A (en) 1995-12-26 2000-07-04 Micron Technologies, Inc. Barrier layer cladding around copper interconnect lines
JPH09260786A (en) 1996-03-22 1997-10-03 Hitachi Ltd Semiconductor light emitting device and method of manufacturing the same
EP0799641A2 (en) 1996-04-03 1997-10-08 Mikrokemia Oy Functional surfaces for chemical reactions and process for the preparation thereof
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
JPH09293681A (en) 1996-04-26 1997-11-11 Sharp Corp Vapor growth device
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6062798A (en) 1996-06-13 2000-05-16 Brooks Automation, Inc. Multi-level substrate processing apparatus
US5747113A (en) 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5858102A (en) 1996-07-29 1999-01-12 Tsai; Charles Su-Chang Apparatus of chemical vapor for producing layer variation by planetary susceptor rotation
US5830270A (en) 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
WO1998006889A3 (en) 1996-08-16 1998-07-02 Forward Technology Ind Inc Superheated vapor dryer system
US6036773A (en) 1996-08-21 2000-03-14 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Method for growing Group III atomic layer
US5942040A (en) 1996-08-27 1999-08-24 Electronics And Telecommunications Research Institute Multi-target manipulator for pulsed laser deposition apparatus
US6113977A (en) 1996-09-11 2000-09-05 Planar International Oy Ltd. Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components
US5951771A (en) 1996-09-30 1999-09-14 Celestech, Inc. Plasma jet system
US5835677A (en) 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US5923056A (en) 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5807792A (en) 1996-12-18 1998-09-15 Siemens Aktiengesellschaft Uniform distribution of reactants in a device layer
JPH10188840A (en) 1996-12-21 1998-07-21 Korea Electron Telecommun Light emitting particles for field emission display and method for forming light emitting layer for field emission display
JPH10190128A (en) 1996-12-27 1998-07-21 Sony Corp Manufacture of semiconductor light emitting device
US6043177A (en) 1997-01-21 2000-03-28 University Technology Corporation Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition
US6051286A (en) 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US20010011526A1 (en) 1997-03-03 2001-08-09 Kenneth Doering Processing chamber for atomic layer deposition processes
US5855675A (en) 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
JPH10308283A (en) 1997-03-04 1998-11-17 Denso Corp El element and its manufacture
US6207302B1 (en) 1997-03-04 2001-03-27 Denso Corporation Electroluminescent device and method of producing the same
US5866795A (en) 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US6271148B1 (en) 1997-04-23 2001-08-07 Applied Materials, Inc. Method for improved remote microwave plasma source for use with substrate processing system
WO1998051838A1 (en) 1997-05-16 1998-11-19 Applied Materials, Inc. Low resistivity w using b2h¿6?
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
US6140237A (en) 1997-06-16 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer
WO1999001595A1 (en) 1997-07-04 1999-01-14 Asm Microchemistry Ltd Method and apparatus for growing thin films
US5882413A (en) 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
US5904565A (en) 1997-07-17 1999-05-18 Sharp Microelectronics Technology, Inc. Low resistance contact between integrated circuit metal levels and method for same
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
US6144060A (en) 1997-07-31 2000-11-07 Samsung Electronics Co., Ltd. Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6140238A (en) 1997-09-03 2000-10-31 National Semiconductor Corporation Self-aligned copper interconnect structure and method of manufacturing same
US5801634A (en) 1997-09-08 1998-09-01 Sony Corporation Signal tower controller
WO1999013504A1 (en) 1997-09-10 1999-03-18 Tokyo Electron Limited A load-lock mechanism and processing apparatus
US6139700A (en) 1997-10-01 2000-10-31 Samsung Electronics Co., Ltd. Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6143659A (en) 1997-11-18 2000-11-07 Samsung Electronics, Co., Ltd. Method for manufacturing aluminum metal interconnection layer by atomic layer deposition method
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
US6206967B1 (en) 1997-12-02 2001-03-27 Applied Materials, Inc. Low resistivity W using B2H6 nucleation step
US6001415A (en) * 1997-12-03 1999-12-14 Advanced Micro Devices, Inc. Via with barrier layer for impeding diffusion of conductive material from via into insulator
WO1999029924A1 (en) 1997-12-09 1999-06-17 Asm Microchemistry Ltd. Method for coating inner surfaces of equipment
US6174809B1 (en) 1997-12-31 2001-01-16 Samsung Electronics, Co., Ltd. Method for forming metal layer using atomic layer deposition
GB2332980B (en) 1997-12-31 2002-06-12 Samsung Electronics Co Ltd A method for forming a conductive layer using an atomic layer deposition process
WO1999041423A2 (en) 1998-02-11 1999-08-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
JPH11269652A (en) 1998-03-14 1999-10-05 Samsung Electronics Co Ltd Production of thin film
US6117244A (en) 1998-03-24 2000-09-12 Applied Materials, Inc. Deposition resistant lining for CVD chamber
US6316098B1 (en) 1998-03-27 2001-11-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
US6025627A (en) 1998-05-29 2000-02-15 Micron Technology, Inc. Alternate method and structure for improved floating gate tunneling devices
US6248605B1 (en) 1998-06-03 2001-06-19 Planar Systems Inc. Method of growing thin film electroluminescent structures
JP2000087029A (en) 1998-06-03 2000-03-28 Planar Syst Inc Method for growing thin film electroluminescent structures
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2000031387A (en) 1998-07-14 2000-01-28 Fuji Electric Co Ltd Method of manufacturing dielectric thin film capacitor
US6270572B1 (en) 1998-08-07 2001-08-07 Samsung Electronics Co., Ltd. Method for manufacturing thin film using atomic layer deposition
JP2000058777A (en) 1998-08-12 2000-02-25 Samsung Electronics Co Ltd Capacitor having alumina / aluminum nitride composite dielectric film formed by atomic layer deposition method and method of manufacturing the same
JP2000138094A (en) 1998-08-14 2000-05-16 Korea Electronics Telecommun Method of manufacturing PBX (X = S, Se) thin film, electroluminescent device including PBX, and method of manufacturing the same
US6291876B1 (en) 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
WO2000011721A1 (en) 1998-08-20 2000-03-02 The Government Of The United States Of America, Represented By The Secretary Of The Navy Electronic devices with barrier film and process for making same
JP2000068072A (en) 1998-08-21 2000-03-03 Planar Syst Inc Thin-film electroluminescence device and method of manufacturing the same
WO2000016377A2 (en) 1998-09-10 2000-03-23 Genitech Co., Ltd. Method for forming a three-component nitride film containing metal and silicon
WO2000015865A1 (en) 1998-09-11 2000-03-23 Asm Microchemistry Oy Method for growing oxide thin films containing barium and strontium
WO2000015881A2 (en) 1998-09-14 2000-03-23 Genitech Co., Ltd. Gas feeding system for chemical vapor deposition reactor and method of controlling the same
US6067222A (en) * 1998-11-25 2000-05-23 Applied Materials, Inc. Substrate support apparatus and method for fabricating same
US6124203A (en) * 1998-12-07 2000-09-26 Advanced Micro Devices, Inc. Method for forming conformal barrier layers
JP2000218445A (en) 1999-02-03 2000-08-08 Agency Of Ind Science & Technol Surface improvement of machine element component
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
WO2000054320A1 (en) 1999-03-11 2000-09-14 Genus, Inc. Radical-assisted sequential cvd
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US20010000866A1 (en) 1999-03-11 2001-05-10 Ofer Sneh Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
WO2000063957A1 (en) 1999-04-06 2000-10-26 Genitech, Inc. Method of forming a thin film
US6042652A (en) 1999-05-01 2000-03-28 P.K. Ltd Atomic layer deposition apparatus for depositing atomic layer on multiple substrates
JP2000319772A (en) 1999-05-01 2000-11-21 P K Ltd Atomic layer vapor deposition device capable of vapor- depositing thin film on plural substrate
JP2001020075A (en) 1999-05-10 2001-01-23 Asm Microchemistry Oy Thin film manufacturing device
US20010009140A1 (en) 1999-05-10 2001-07-26 Niklas Bondestam Apparatus for fabrication of thin films
JP2000340883A (en) 1999-05-27 2000-12-08 Fujitsu Ltd Multi-wavelength oscillation optical semiconductor device
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
JP2000353666A (en) 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd Semiconductor thin film and manufacture thereof
WO2000079576A1 (en) 1999-06-19 2000-12-28 Genitech, Inc. Chemical deposition reactor and method of forming a thin film using the same
US6071808A (en) 1999-06-23 2000-06-06 Lucent Technologies Inc. Method of passivating copper interconnects in a semiconductor
WO2000079019A1 (en) 1999-06-24 2000-12-28 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
US6306216B1 (en) 1999-07-15 2001-10-23 Moohan Co., Ltd. Apparatus for deposition of thin films on wafers through atomic layer epitaxial process
JP2001062244A (en) 1999-07-20 2001-03-13 Asm Microchemistry Oy Method and device for removing material from gas
EP1077484A2 (en) 1999-08-16 2001-02-21 Applied Materials, Inc. Barrier layer for electroplating processes
WO2001015220A1 (en) 1999-08-24 2001-03-01 Asm America, Inc. Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
GB2355727A (en) 1999-10-06 2001-05-02 Samsung Electronics Co Ltd Atomic layer deposition method
JP2001152339A (en) 1999-10-06 2001-06-05 Samsung Electronics Co Ltd Thin film deposition method using an atomic layer vapor deposition method
JP2001172767A (en) 1999-10-14 2001-06-26 Asm Microchemistry Oy Method of growing oxide thin film
WO2001029893A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
WO2001027346A1 (en) 1999-10-15 2001-04-19 Asm Microchemistry Oy Method of modifying source chemicals in an ald process
WO2001027347A1 (en) 1999-10-15 2001-04-19 Asm Microchemistry Oy Method of depositing transition metal nitride thin films
WO2001029280A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Deposition of transition metal carbides
WO2001029891A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Conformal lining layers for damascene metallization
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
JP2001189312A (en) 1999-10-25 2001-07-10 Motorola Inc Method of manufacturing semiconductor structure having metal oxide interface with silicon
WO2001036702A1 (en) 1999-11-18 2001-05-25 Genitech Co., Ltd. Method of vaporizing liquid sources and apparatus therefor
WO2001040541A1 (en) 1999-12-03 2001-06-07 Asm Microchemistry Oy Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide
JP2001217206A (en) 1999-12-08 2001-08-10 Samsung Electronics Co Ltd Metal layer forming method using atomic layer deposition and semiconductor device using the same
JP2001254181A (en) 2000-01-06 2001-09-18 Tokyo Electron Ltd Film depositing apparatus and film depositing method
JP2001220294A (en) 2000-02-04 2001-08-14 Denso Corp Method for forming film by atomic layer epitaxial growing method
JP2001220287A (en) 2000-02-04 2001-08-14 Denso Corp Method and apparatus for thin film formation by atomic layer growth
US20010042799A1 (en) 2000-02-16 2001-11-22 Apex Co. Ltd. Showerhead apparatus for radical-assisted deposition
US20010031562A1 (en) 2000-02-22 2001-10-18 Ivo Raaijmakers Method of forming ultrathin oxide layer
JP2001240972A (en) 2000-02-29 2001-09-04 Denso Corp Glass substrate storage jig for cvd and ale system
WO2001066832A2 (en) 2000-03-07 2001-09-13 Asm America, Inc. Graded thin films
US20010041250A1 (en) 2000-03-07 2001-11-15 Werkhoven Christian J. Graded thin films
JP2001284042A (en) 2000-03-31 2001-10-12 Denso Corp Organic EL device
JP2001303251A (en) 2000-04-20 2001-10-31 Samsung Electronics Co Ltd Method for manufacturing barrier metal film utilizing atomic layer deposition method
US20010034123A1 (en) 2000-04-20 2001-10-25 In-Sang Jeon Method of manufacturing a barrier metal layer using atomic layer deposition
JP2001328900A (en) 2000-05-15 2001-11-27 Denso Corp Method for forming thin film
US20020094632A1 (en) * 2000-08-31 2002-07-18 Agarwal Vishnu K. Capacitor fabrication methods and capacitor constructions
US6573150B1 (en) * 2000-10-10 2003-06-03 Applied Materials, Inc. Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors
US6416822B1 (en) * 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6428859B1 (en) * 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20020127336A1 (en) 2001-01-16 2002-09-12 Applied Materials, Inc. Method for growing thin films by catalytic enhancement

Non-Patent Citations (59)

* Cited by examiner, † Cited by third party
Title
"Applications of Integrated processing", Solid State Technology, US, Cowan Pub., vol. 37, No. 12 (Dec. 1, 1994), pp. 45-47.
"Cluster Tools for Fabrication of Advanced devices" Jap. J. of Applied Physics, Extended Abstracts, 22<SUP>nd </SUP>Conference Solid State Devices and Materials (1990), pp. 849-852 XP000178141 (Article on Order-To be provided).
"Cluster Tools for Fabrication of Advanced devices" Jap. J. of Applied Physics, Extended Abstracts, 22nd Conference Solid State Devices and Materials (1990), pp. 849-852 XP000178141 (Article on Order—To be provided).
Abstracts of articles re atomic layer deposition and atomic layer nucleation.
Abstracts of articles re atomic layer deposition and semiconductors and copper.
Abstracts of articles re atomic layer deposition.
Abstracts of articles-atomic layer deposition.
Abstracts of search results re atomic layer deposition, search dated Jan. 24, 2002.
Bader, et al., "Integrated Processing Equipment", Solid State Technology, Cowan Pub., vol. 33, No. 5 (May 1, 1990), pp. 149-154.
Bedair, "Atomic layer epitaxy deposition processes", J. Vac. Sci. Technol. 12(1) (Jan./Feb. 1994).
Choi, et al., "Stability of TiB<SUB>2 </SUB>as a Diffusion Barrier on Silicon", J. Electrochem. Soc. 138(10) (Oct. 1991), pp. 3062-3067.
Choi, et al., "The effect of annealing on resistivity of low pressure chemical vapor deposited titanium diboride", J. Appl. Phys. 69(11) (Jun. 1, 1991), pp. 7853-7861.
Choi, et al., "Stability of TiB2 as a Diffusion Barrier on Silicon", J. Electrochem. Soc. 138(10) (Oct. 1991), pp. 3062-3067.
Elam, et al., "Nucleation and growth during tungsten atomic layer deposition on SiO2 surfaces," Thin Solid Films 386 (2001) pp. 41-52, (Accepted Dec. 14, 2000).
Elers, et al., "NbC15 as a precursor in atomic layer epitaxy", Appl. Surf. Sci., vol. 82/83 (1994), pp. 468-474.
George, et al., "Atomic layer controlled deposition of SiO<SUB>2 </SUB>and Al<SUB>2</SUB>O<SUB>3 </SUB>using ABAB . . . binary reaction sequence chemistry", Appl. Surf. Sci., vol. 82/83 (1994), pp. 460-467.
George, et al., "Surface Chemistry for Atomic Layer Growth", J. Phys. Chem., vol. 100 (1996), pp. 13121-13131.
George, et al., "Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB . . . binary reaction sequence chemistry", Appl. Surf. Sci., vol. 82/83 (1994), pp. 460-467.
Hultman, et al., "Review of the thermal and mechanical stability of TiN-based thin films", Zeitschrift Fur Metallkunde, 90(10), (Oct. 1999), pp. 803-813.
IBM Tech. Disc. Bull. "Multiprocessor and Multitasking Architecture for Tool Control of the Advanced via Inspection Tools" (May 1992), pp. 190-191.
IBM Tech. Disc. Bull. Knowledge-Based Dynamic Scheduler in Distributed Computer Control, (Jun. 1990), pp. 80-84.
International Search Report from the European Patent Office for International Application No. PCT/US 02/34277, dated May 9, 2003.
International Search Report from the European Patent Office for International Application No. PCT/US 02/34553, dated May 8, 2003.
Kitigawa, et al., "Hydrogen-mediated low temperature epitaxy of Si in plasma-enhanced chemical vapor deposition", Applied Surface Science (2000), pp. 30-34 (Article on Order-To be Provided).
Klaus, et al., "Atomic Layer Deposition of SiO<SUB>2 </SUB>Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions", Surface Review & Letters, 6(3&4) (1999), pp. 435-448.
Klaus, et al., "Atomic Layer Deposition of Tungsten using Sequential Surface Chemistry with a Sacrificial Stripping Reaction," Thin Solid Films 360 (2000), pp. 145-153, (Accepted Nov. 16, 1999).
Klaus, et al., "Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions", Appl. Surf. Sci., vol. 162-163 (2000), pp. 479-491.
Klaus, et al., "Atomic Layer Deposition of SiO2 Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions", Surface Review & Letters, 6(3&4) (1999), pp. 435-448.
Lee, "The Preparation of Titanium-Based Thin Film by CVD Using Titanium Chlorides as Precursors", Chemical Vapor Deposition, 5(2) (Mar. 1999), pp. 69-73.
Lee, et al., "Pulsed nucleation for ultra-high aspect ratio tungsten plugfill", Novellus Systems, Inc. (2001), pp. 1-2 (Article on Order-To be Provided).
Martensson, et al., "Atomic Layer Epitaxy of Copper on Tantalum", Chemical Vapor Deposition, 3(1) (Feb. 1, 1997), pp. 45-50.
Martensson, et al., "Atomic Layer Epitaxy of Copper, Growth & Selectivity in the Cu (II)-2,2,6,6-Tetramethyl-3, 5-Heptanedion ATE/H2 Process", J. Electrochem. Soc. , 145(8) (Aug. 1998), pp. 2926-2931.
McGeachin, S., "Synthesis and properties of some beta-Diketimines derived from acetylacetone, and their metal complexes", Canadian J. of Chemistry, vol. 46 (1968), pp. 1903-1912.
McGeachin, S., "Synthesis and properties of some β-Diketimines derived from acetylacetone, and their metal complexes", Canadian J. of Chemistry, vol. 46 (1968), pp. 1903-1912.
Min, et al., "Atomic layer deposition of TiN thin films by sequential introduction of Ti precursor and NH/sub3/", Symp.: Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits (Apr. 13-16, 1998), pp. 337-342.
Min, et al., "Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply", Mat., Res. Soc. Symp. Proc., vol. 564 (Apr. 5, 1999), pp. 207-210.
Min, et al., "Metal-Organic Atomic-Layer Deposition of Titanium-Silicon-Nitride Films", Applied Physics Letters, American Inst. Of Physics, vol. 75(11) (Sep. 13, 1999).
NERAC Search abstract of "Atomic Layer deposition of Ta and Ti for Interconnect Diffusion Barriers", by Rossnagel, et al., J. Vac. Sci. & Tech., 18(4) (Jul. 2000).
NERAC Search-Atomic Layer Deposition, search dated Oct. 16, 2001.
NERAC.COM Retro Search: Atomic Layer Deposition / Epitaxy Aluminum Oxide Plasma, dated Oct. 2, 1001.
NERAC.COM Retro Search: Atomic Layer Deposition of Copper, dated Oct. 11, 2001.
Niinisto, et al., "Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applications", Mat. Sci. & Eng., vol. B41 (1996), pp. 23-29.
Ohba, et al., "Thermal Decomposition of Methylhydrazine and Deposition Properties of CVD TiN Films", Conference Proceedings, Advanced Metallization for ULSI Applications in 1993 (1994), pp. 143-149.
Partial Search Report (Annex to Form PCT/ISA/206), dated Oct. 25, 2002 for PCT/US02/02651.
Ritala et al. "Communications: Perfectly Conformal TiN and Al<SUB>2</SUB>O<SUB>3 </SUB>Films Deposited by Atomic Layer Deposition" Chem. Vap. Deposition, 1999, 5, No. 1,pp. 7-9.
Ritala et al. "Communications: Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer Deposition" Chem. Vap. Deposition, 1999, 5, No. 1,pp. 7-9.
Ritala, et al., "Atomic Layer Epitaxy Growth of TiN Thin Films", J. Electrochem. Soc., 142(8) (Aug. 1995), pp. 2731-2737.
Ritala, M. et al., "Controlled TaN, Ta3N5, and TaOxNy Thin Films by Atomic Layer Deposition," Chem. Mater., 1999, vol. 11, pp. 1712-1718. *
Rossnagel, S.M., et al., "Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers," J. Vac. Sci. Technol. B 18(4), Jul./Aug. 2000.
Scheper, et al.,"Low-temperature deposition of titanium nitride films from dialkylhydrazine-based precursors", Materials Science in Semiconductor Processing 2 (1999), pp. 149-157.
Solanki, et al., "Atomic deposition of Copper Seed Layers", Electrochemical and Solid State Letters, 3(10) (2000), pp. 479-480.
Suzuki, et al., "A 0.2-mum contact filing by 450° C-hydrazine-reduced TiN film with low resistivity", IEDM 92-979, pp. 11.8.1-11.8.3.
Suzuki, et al., "LPCVD-TiN Using Hydrazine and TiCl<SUB>4</SUB>", VMIC Conference (Jun. 8-9, 1993), pp. 418-423.
Suzuki, et al., "A 0.2-μm contact filing by 450° C-hydrazine-reduced TiN film with low resistivity", IEDM 92-979, pp. 11.8.1-11.8.3.
Suzuki, et al., "LPCVD-TiN Using Hydrazine and TiCl4", VMIC Conference (Jun. 8-9, 1993), pp. 418-423.
Wise, et al., "Diethyldiethoxysilane as a new precursor for SiO<SUB>2 </SUB>growth on silicon", Mat. Res. Soc. Symp. Proc., vol. 334 (1994), pp. 37-43.
Wise, et al., "Diethyldiethoxysilane as a new precursor for SiO2 growth on silicon", Mat. Res. Soc. Symp. Proc., vol. 334 (1994), pp. 37-43.
Yamaga, et al., "Atomic layer epitaxy of ZnS by a new gas supplying system in a low-pressure metalorganic vapor phase epitaxy", J. of Crystal Growth 117 (1992), pp. 152-155.
Yamaguchi, et al., "Atomic-layer chemical-vapor-deposition of silicon dioxide films with extremely low hydrogen content", Appl. Surf. Sci., vol. 130-132 (1998), pp. 202-207.

Cited By (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7670945B2 (en) 1998-10-01 2010-03-02 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US7470611B2 (en) 1998-10-01 2008-12-30 Applied Materials, Inc. In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7674715B2 (en) 2000-06-28 2010-03-09 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7745333B2 (en) 2000-06-28 2010-06-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7709385B2 (en) 2000-06-28 2010-05-04 Applied Materials, Inc. Method for depositing tungsten-containing layers by vapor deposition techniques
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7846840B2 (en) 2000-06-28 2010-12-07 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US20090081866A1 (en) * 2000-06-28 2009-03-26 Sang-Hyeob Lee Vapor deposition of tungsten materials
US7465665B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for depositing tungsten-containing layers by vapor deposition techniques
US8114789B2 (en) 2001-02-02 2012-02-14 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7781326B2 (en) * 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9012334B2 (en) 2001-02-02 2015-04-21 Applied Materials, Inc. Formation of a tantalum-nitride layer
US20050260348A1 (en) * 2001-05-07 2005-11-24 Samsung Electronics Co., Ltd. Thin film including multi components and method of forming the same
US7709377B2 (en) * 2001-05-07 2010-05-04 Samsung Electronics Co., Ltd. Thin film including multi components and method of forming the same
US7695563B2 (en) 2001-07-13 2010-04-13 Applied Materials, Inc. Pulsed deposition process for tungsten nucleation
US7749815B2 (en) 2001-07-16 2010-07-06 Applied Materials, Inc. Methods for depositing tungsten after surface treatment
US7605083B2 (en) 2001-07-16 2009-10-20 Applied Materials, Inc. Formation of composite tungsten films
US7611990B2 (en) 2001-07-25 2009-11-03 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US9708707B2 (en) 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US20100285237A1 (en) * 2001-09-10 2010-11-11 Tegal Corporation Nanolayer deposition using bias power treatment
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US8318266B2 (en) 2001-10-26 2012-11-27 Applied Materials, Inc. Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US20070026147A1 (en) * 2001-10-26 2007-02-01 Ling Chen Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US7780788B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US7699023B2 (en) 2001-10-26 2010-04-20 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US7780789B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
US8668776B2 (en) 2001-10-26 2014-03-11 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US20080038463A1 (en) * 2001-10-26 2008-02-14 Applied Materials, Inc. Atomic layer deposition process
US20080102203A1 (en) * 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US20080107809A1 (en) * 2001-10-26 2008-05-08 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US8293328B2 (en) 2001-10-26 2012-10-23 Applied Materials, Inc. Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US20070117363A1 (en) * 2001-11-14 2007-05-24 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US7892602B2 (en) 2001-12-07 2011-02-22 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US20060216928A1 (en) * 2001-12-07 2006-09-28 Hua Chung Cyclical deposition of refractory metal silicon nitride
US7745329B2 (en) 2002-02-26 2010-06-29 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7867896B2 (en) 2002-03-04 2011-01-11 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7514358B2 (en) 2002-03-04 2009-04-07 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7867914B2 (en) 2002-04-16 2011-01-11 Applied Materials, Inc. System and method for forming an integrated barrier layer
US20060014384A1 (en) * 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
US7569500B2 (en) 2002-06-14 2009-08-04 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US7569501B2 (en) 2002-06-14 2009-08-04 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US7591907B2 (en) 2002-11-14 2009-09-22 Applied Materials, Inc. Apparatus for hybrid chemical processing
US7402210B2 (en) 2002-11-14 2008-07-22 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US20080008823A1 (en) * 2003-01-07 2008-01-10 Ling Chen Deposition processes for tungsten-containing barrier layers
US7507660B2 (en) * 2003-01-07 2009-03-24 Applied Materials, Inc. Deposition processes for tungsten-containing barrier layers
US9447496B2 (en) 2003-02-04 2016-09-20 Asm International N.V. Nanolayer deposition process
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
US20100190353A1 (en) * 2003-02-04 2010-07-29 Tegal Corporation Nanolayer deposition process
US8658259B2 (en) 2003-02-04 2014-02-25 Asm International N.V. Nanolayer deposition process
US8940374B2 (en) 2003-02-04 2015-01-27 Asm International N.V. Nanolayer deposition process
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7211508B2 (en) 2003-06-18 2007-05-01 Applied Materials, Inc. Atomic layer deposition of tantalum based barrier materials
US7794544B2 (en) 2004-05-12 2010-09-14 Applied Materials, Inc. Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8343279B2 (en) 2004-05-12 2013-01-01 Applied Materials, Inc. Apparatuses for atomic layer deposition
US8282992B2 (en) 2004-05-12 2012-10-09 Applied Materials, Inc. Methods for atomic layer deposition of hafnium-containing high-K dielectric materials
US20090155998A1 (en) * 2004-06-30 2009-06-18 Johnston Steven W Atomic layer deposited tantalum containing adhesion layer
US20060003581A1 (en) * 2004-06-30 2006-01-05 Johnston Steven W Atomic layer deposited tantalum containing adhesion layer
US7605469B2 (en) * 2004-06-30 2009-10-20 Intel Corporation Atomic layer deposited tantalum containing adhesion layer
US7601637B2 (en) * 2004-06-30 2009-10-13 Intel Corporation Atomic layer deposited tantalum containing adhesion layer
US20060040496A1 (en) * 2004-08-20 2006-02-23 Hsien-Che Teng Method of forming a material film
US7189649B2 (en) * 2004-08-20 2007-03-13 United Microelectronics Corp. Method of forming a material film
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US9032906B2 (en) 2005-11-04 2015-05-19 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7850779B2 (en) 2005-11-04 2010-12-14 Applied Materisals, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7682946B2 (en) 2005-11-04 2010-03-23 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7858816B2 (en) 2007-01-18 2010-12-28 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US7678298B2 (en) 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7585762B2 (en) 2007-09-25 2009-09-08 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US8969195B2 (en) 2008-02-22 2015-03-03 International Business Machines Corporation Methods of manufacturing semiconductor devices and a semiconductor structure
US20090212434A1 (en) * 2008-02-22 2009-08-27 Anderson Felix P Methods of manufacturing semiconductor devices and a semiconductor structure
US8168543B2 (en) 2008-03-04 2012-05-01 Applied Materials, Inc. Methods of forming a layer for barrier applications in an interconnect structure
US20100006425A1 (en) * 2008-03-04 2010-01-14 Xinyu Fu Methods of forming a layer for barrier applications in an interconnect structure
US7618893B2 (en) * 2008-03-04 2009-11-17 Applied Materials, Inc. Methods of forming a layer for barrier applications in an interconnect structure
US20090227105A1 (en) * 2008-03-04 2009-09-10 Xinyu Fu Methods of forming a layer for barrier applications in an interconnect structure
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US9418890B2 (en) 2008-09-08 2016-08-16 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US20100120245A1 (en) * 2008-11-07 2010-05-13 Agus Sofian Tjandra Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
US10217809B2 (en) 2017-01-11 2019-02-26 International Business Machines Corporation Method of forming resistors with controlled resistivity
US10211280B2 (en) 2017-01-11 2019-02-19 International Business Machines Corporation Method of forming tunable resistor with curved resistor elements
US10211279B2 (en) 2017-01-11 2019-02-19 International Business Machines Corporation Tunable resistor with curved resistor elements
US9972672B1 (en) 2017-01-11 2018-05-15 International Business Machines Corporation Tunable resistor with curved resistor elements
US10283583B2 (en) 2017-01-11 2019-05-07 International Business Machines Corporation 3D resistor structure with controlled resistivity
US10325978B2 (en) 2017-01-11 2019-06-18 International Business Machines Corporation Resistors with controlled resistivity
US9991330B1 (en) 2017-01-11 2018-06-05 International Business Machines Corporation Resistors with controlled resistivity
US11694912B2 (en) 2017-08-18 2023-07-04 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11028480B2 (en) 2018-03-19 2021-06-08 Applied Materials, Inc. Methods of protecting metallic components against corrosion using chromium-containing thin films
US11384648B2 (en) 2018-03-19 2022-07-12 Applied Materials, Inc. Methods for depositing coatings on aerospace components
US11560804B2 (en) 2018-03-19 2023-01-24 Applied Materials, Inc. Methods for depositing coatings on aerospace components
US11603767B2 (en) 2018-03-19 2023-03-14 Applied Materials, Inc. Methods of protecting metallic components against corrosion using chromium-containing thin films
US11753726B2 (en) 2018-04-27 2023-09-12 Applied Materials, Inc. Protection of components from corrosion
US11761094B2 (en) 2018-04-27 2023-09-19 Applied Materials, Inc. Protection of components from corrosion
US11015252B2 (en) 2018-04-27 2021-05-25 Applied Materials, Inc. Protection of components from corrosion
US11753727B2 (en) 2018-04-27 2023-09-12 Applied Materials, Inc. Protection of components from corrosion
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
US11732353B2 (en) 2019-04-26 2023-08-22 Applied Materials, Inc. Methods of protecting aerospace components against corrosion and oxidation
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
US11739429B2 (en) 2020-07-03 2023-08-29 Applied Materials, Inc. Methods for refurbishing aerospace components
US11976002B2 (en) 2021-01-05 2024-05-07 Applied Materials, Inc. Methods for encapsulating silver mirrors on optical structures

Also Published As

Publication number Publication date
WO2002063677A3 (en) 2003-10-09
TW525270B (en) 2003-03-21
US20100311237A1 (en) 2010-12-09
US7094680B2 (en) 2006-08-22
US20120178256A1 (en) 2012-07-12
US8114789B2 (en) 2012-02-14
US20020106846A1 (en) 2002-08-08
US20060030148A1 (en) 2006-02-09
WO2002063677A8 (en) 2003-08-14
US20050164487A1 (en) 2005-07-28
US7781326B2 (en) 2010-08-24
US9012334B2 (en) 2015-04-21
WO2002063677A1 (en) 2002-08-15

Similar Documents

Publication Publication Date Title
US6951804B2 (en) Formation of a tantalum-nitride layer
WO2002063677A2 (en) Formation of a tantalum-nitride layer
US6620723B1 (en) Formation of boride barrier layers using chemisorption techniques
US20020086111A1 (en) Method of forming refractory metal nitride layers using chemisorption techniques
JP3687651B2 (en) Thin film formation method
US7786006B2 (en) Interconnect structures with a metal nitride diffusion barrier containing ruthenium and method of forming
US7863179B2 (en) Methods of fabricating a barrier layer with varying composition for copper metallization
US20080102204A1 (en) Vapor deposition of metal carbide films
US20070283886A1 (en) Apparatus for integration of barrier layer and seed layer
JP5109299B2 (en) Deposition method

Legal Events

Date Code Title Description
AS Assignment

Owner name: APPLIED MATERIALS, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SEUTTER, SEAN M.;YANG, MICHAEL X.;XI, MING;REEL/FRAME:011547/0116

Effective date: 20010201

STCF Information on status: patent grant

Free format text: PATENTED CASE

CC Certificate of correction
FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12