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KR930003257A - 반도체 장치 및 그의 제조방법 - Google Patents

반도체 장치 및 그의 제조방법 Download PDF

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KR930003257A
KR930003257A KR1019920012082A KR920012082A KR930003257A KR 930003257 A KR930003257 A KR 930003257A KR 1019920012082 A KR1019920012082 A KR 1019920012082A KR 920012082 A KR920012082 A KR 920012082A KR 930003257 A KR930003257 A KR 930003257A
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conductive layer
metal
semiconductor device
component
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KR960006340B1 (ko
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이상인
홍정인
박종호
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김광호
삼성전자 주식회사
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Abstract

내용 없음.

Description

반도체 장치 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제7도 내지 제11도는 본 발명에 따른 배선층의 실시예들을 나타낸다.

Claims (45)

  1. 반도체 기판, 상기 반도체 기판에 형성되고 그 하지막의 표면 일부를 노출시키는 개구부를 갖는 절연막, 상기 절연막에 형성되어 있으며 상기 개구부를 완전히 매립하고, 후속 열처리 단계에서 Si잔사를 생성하지 않는 물질로 이루어진 제1도전층으로 구성된 배선층을 포함하는 반도체 장치.
  2. 제1항에 있어서, 상기 개구부는 반도체 표면까지 연장되어 상기 반도체 기판의 표면 일부를 노출시킴을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 제1도전층은 Si성분을 포함하는 제1금속층 및 Si성분을 함유하지 않는 제2금속층으로 구성되어 있음을 특징으로 하는 반도체 장치.
  4. 제1항에 있어서, 상기 제1도전층에서 상기 개구부의 내면, 상기 절연막 표면 및 상기 하지막의 노출된 표면 부근의 제1도전층의 저부는 Si 성분을 함유하고, 상기 도전층의 상부는 실질적으로 Si성분을 함유하지 않음을 특징으로 하는 반도체 장치.
  5. 제1항에 있어서, 상기 제1도전층은 0.5중량% 이하의 Si성분을 함유하는 금속으로 구성되어 있음을 특징으로 하는 반도체 장치.
  6. 제1항에 있어서, 상기 제1도전층은 상기 개구부의 내면, 절연막 및 상기 하지층의 노출된 표면상에 형성된 내화금속 실리사이드 층 및 상기 내화금속 실리사이드 층 상에 형 성되고, Si성분을 함유하지 않는 금속 및 0.5%중량 이하의 Si성분을 함유하는 금속으로 구성된 제1금속층으로 구성되어 있음을 특징으로 하는 반도체 장치.
  7. 제6항에 있어서, 상기 제1금속층은 순수 Al, Al-Cu합금, Al-Ti합금 및 0.5중량%이하의 Si성분을 함유하는 알루미늄 합금으로 구성된 군에서 선택된 금속으로 구성되어 있음을 특징으로 하는 반도체 장치.
  8. 제1항에 있어서, 상기 제1도전층은, 상기 개구부의 내면, 절연막, 상기 하지층의 노출된 표면상에 형성된 내화금속층 및 상기 내화금속층상에 형성된 Si성분을 함유하는 제1금속층으로 구성되어 있음을 특징으로 하는 반도체 장치.
  9. 제1항에 있어서, 상기 절연층의 표면, 상기 개구부의 내면 및 상기 하지막의 노출된 표면상에, 상기 제1도전층의 아래에 형성된 확산 장벽층을 더 포함함을 특징으로 하는 반도체 장치.
  10. 제9항에 있어서, 상기 확산장벽층은 천이금속으로 구성된 제1확산장벽층 및 천이금속화합물로 구성된 제2확산 장벽층으로 구성되어 있음을 특징으로 하는 반도체 장치.
  11. 제1항에 있어서, 제1도전층상에 평탄한 표면을 갖는 제2도전층을 더 포함함을 특징으로 하는 반도체 장치.
  12. 제11항에 있어서, 상기 제2도전층은 Si성분을 포함하지 않는 금속으로 구성되어 있음을 특징으로 하는 반도체 장치.
  13. 제8항에 있어서, 평탄한 표면을 갖고, Si성분을 함유하는 금속으로 구성된 제2도전층을 더 포함함을 특징으로 하는 반도체 장치.
  14. 제11항에 있어서, 상기 제2도전층 상에 형성된 반사방지막을 더 포함함을 특징으로 하는 반도체 장치.
  15. 제14항에 있어서, 상기 반사방지막은 천이금속화합물로 구성됨을 특징으로 하는 반도체 장치.
  16. 제1항에 있어서, 상기 개구부는 상부에 단차부가 형성된 접촉구임을 특징으로 하는 반도체 장치.
  17. 제1항에 있어서, 상기 개구부는 테이퍼 형상의 접촉구임을 특징으로 하는 반도체 장치.
  18. 제1항에 있어서, 상기 개구부는 어스펙트비는 약 1.0이상임을 특징으로 하는 반도체 장치.
  19. 반도체 기판상에 절연층을 형성하는 단계; 상기 절연층에 상기 절연층의 하지막의 표면 일부를 노출시키는 개구부를 형성하는 단계 상기 절연층상에 후속하는 열처리 단계에서 Si잔사를 생성시키지 않는 제1도전층을 형성하는 단계; 및 상기 제1도전층을 적당한 시간동안 열처리하여 상기 제1도전층의 물질로 상기 개구부를 매립하는 단계로 구성된 배선층을 갖는 반도체 장치의 제조방법.
  20. 제19항에 있어서, 상기 개구부는 상기 반도체 기판의 표면까지 연장되어 있어, 상기 기판의 표면 일부를 노출하고, 상기 제1도전층을 형성하는 단계는 상기 절연막 상기 개구부의 내면 및 상기 반도체 기판의 노출된 표면상에 형성하는 단계로 구성됨을 특징으로 하는 반도체 장치의 제조방법.
  21. 제19항에 있어서, 상기 제1도전층은, 연속적으로 Si성분을 함유하는 제1금속을 증착하여 제1도전층을 형성하고, Si성분을 함유하지 않는 제2금속을 증착하여 제2금속층을 형성하여 수득된 것임을 특징으로 하는 반도체 장치의 제조방법.
  22. 제21항에 있어서, 상기 제1도전층의 열처리 단계는 제1금속 용융점의 0.8Tm∼Tm의 온도에서 1분 이상 수행함을 특징으로 하는 반도체 장치의 제조방법.
  23. 제21항에 있어서, 상기 제1금속은 Si성분을 함유하는 알루이늄 합금이고, 상기 제2금속은 순수 알루미늄 및 Si성분이 없는 알루미늄 합금으로 구성된 군에서 선택된 어느 하나임을 특징으로 하는 반도체 장치의 제조방법.
  24. 제21항에 있어서, 상기 제1및 제2금속은 진공중 저온에서 증착됨을 특징으로 하는 반도체 장치의 제조방법.
  25. 제19항에 있어서, 상기 제1도전층은, 연속적으로 상기 절연층, 상기 개구부의 내면 및 상기 하지층의 노출된 표면상에 실리콘층을 형성하고, 상기 실리콘 층상에 Si성분을 함유하지 않은 금속을 중착시켜 금속층을 형성하여 수득함을 특징으로 하는 반도체 장치의 제조방법.
  26. 제25항에 있어서, 상기 금속층은 진공중 저온에서 Si성분을 함유하지 않는 금속을 증착시켜 형성함을 특징으로 하는 반도체 장치의 제조방법.
  27. 제25항에 있어서, 상기 제1도전층의 열처리 단계는, 상기 금속의 용융점을 0.8Tm내지 Tm의 온도에서 수행함을 특징으로 하는 반도체 장치의 제조방법.
  28. 제19항에 있어서, 상기 제1도전층은 Si성분의 함량이 0.5중량% 이하인 금속을 증착시켜 형성함을 특징으로 하는 반도체 장치의 제조방법.
  29. 제28항에 있어서, 상기 금속은 진공중 저온에서 증착됨을 특징으로 귀는 반도체 장치의 제조방법.
  30. 제28항에 있어서, 상기 제1도전층의 열처리 단계는 상기 금속의 용융점의 0.8Tm∼Tm의 온도에서 1분이상 수행함을 특징으로 하는 반도체 장치의 제조방법.
  31. 제19항에 있어서, 상기 제1도전층은 연속적으로 상기 절연층, 상기 개구부의 내면 및 상기 하지층의 노출된 표면상에 내화금속 실리사이드층을 형성하고, 상기 내화금속 실리사이드층 상에 제1금속층을 형성하여 수득함을 특징으로 하는 반도체 장치의 제조방법.
  32. 제31항에 있어서, 상기 제1금속층은 순수 Al, Al-Cu합금, Al-Ti합금, Si성분의 0.5%이하인 알루미늄 합금으로 구성된 군에서 선택된 어느 하나로 구성됨을 특징으로 하는 반도체 장치의 제조방법.
  33. 제19항에 있어서, 상기 제1도전층은 연속적으로 상기 절연층, 상기 개구부의 내면 및 상기 하지층의 노출된 표면상에 내화금속층을 형성하고, 상기 내화금속층상에 Si성분을 함유하는 제1금속층을 형성하므로써 수득함을 특징으로 하는 반도체 장치의 제조방법.
  34. 제19항에 있어서, 상기 열처리 단계후, 상기 제1도전층 상에 금속을 증착하여 제2도전층을 형성하는 단계를 더포함함을 특징으로 하는 반도체 장치의 제조방법.
  35. 제34항에 있어서, 상기 제2도전층은 Si성분을 함유하지 않는 금속을 증착하여 성형함을 특징으로 하는 반도체 장치의 제조방법.
  36. 제35항에 있어서, 상기 금속은 350℃이하의 온도에서 증착됨을 특징으로 하는 반도체 장치의 제조방법.
  37. 제33항에 있어서, 상기 열처리 단계후에 Si성분을 함유하는 금속을 증착하여 제2도전층을 형성함을 특징으로 하는 반도체 장치의 제조방법.
  38. 제34항에 있어서, 상기 제2도전층을 열처리하여 상기 제2도전층의 표면을 평탄화하는 공정을 더 포함함을 특징으로 하는 반도체 장치의 제조방법.
  39. 제38항에 있어서, 상기 제2도전층의 열처리 단계는 상기 금속용융점의 0.8Tm∼Tm의 온도에서 1분 이상 수행함을 특징으로 하는 반도체 장치의 제조방법.
  40. 제19항에 있어서, 상기 제1도전층을 형성하기 전에, 상기 절연층, 상기 개구부의 내면, 및 상기 하지층의 노출된 표면상에 확산장벽층을 형성하는 단계를 더 포함함을 특징으로 하는 반도체 장치의 제조방법.
  41. 제40항에 있어서, 상기 확산장벽층 형성단계는, 상기 절연막, 상기 개구부의 내면 및 상기 하지막의 노출된 표면상에 제1장벽층을 형성하는 단계, 상기 제1장벽층 상에 제2장벽층을 형성하는 단계, 및 상기 확산 장벽층을 질소 또는 암모니아 분위기에서 약30∼60분간 450∼500℃의 온도에서 열처리하는 단계로 구성됨을 특징으로 하는 반도체 장치의 제조방법.
  42. 제19항에 있어서, 상기 제1도전층 형성 및 열처리 단계는 진공중에서, 진공을 깨지 않고 수행함을 특징으로 하는 반도체 장치의 제조방법.
  43. 제19항에 있어서, 상기 제1도전층 형성 및 열처리 단계는 불활성 분위기에서 수행함을 특징으로 하는 반도체 장치의 제조방법.
  44. 제19항에 있어서, 상기 제1도전층 형성 및 열처리 단계는 환원성 가스 분위기에서 수행함을 특징으로 하는 반도체 장치의 제조방법.
  45. 제34항에 있어서, 상기 제2도전층상에 반사방지막을 형성하는 단계를 포함함을 특징으로 하는 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920012082A 1991-07-08 1992-07-07 반도체 장치 및 그의 제조방법 KR960006340B1 (ko)

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JP3006735B2 (ja) 2000-02-07
DE4222142A1 (de) 1993-01-21
FR2679069B1 (fr) 1994-02-11
TW520072U (en) 2003-02-01
ITMI921651A0 (it) 1992-07-07
GB2257564A (en) 1993-01-13
US5355020A (en) 1994-10-11
US5843842A (en) 1998-12-01
JPH05190549A (ja) 1993-07-30
ITMI921651A1 (it) 1994-01-07
IT1255411B (it) 1995-10-31
FR2679069A1 (fr) 1993-01-15
GB2257564B (en) 1995-06-28
CN1031436C (zh) 1996-03-27
CN1068444A (zh) 1993-01-27
DE4222142B4 (de) 2006-08-03
KR960006340B1 (ko) 1996-05-13
GB9214440D0 (en) 1992-08-19

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