KR100912754B1 - 2극 장치 - Google Patents
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- KR100912754B1 KR100912754B1 KR1020037005495A KR20037005495A KR100912754B1 KR 100912754 B1 KR100912754 B1 KR 100912754B1 KR 1020037005495 A KR1020037005495 A KR 1020037005495A KR 20037005495 A KR20037005495 A KR 20037005495A KR 100912754 B1 KR100912754 B1 KR 100912754B1
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Abstract
Description
다른 실시예에서, 본 발명은 기부 및 망상의 제2 표면을 구비한 대향 전극에 대향하여 배치하기 위한 제1 표면 및 기부를 구비하는 제1 전극을 포함하는 2극 장치이며, 제1 표면은 매끈한 비망상 표면의 이론적 표면적의 적어도 1.5배의 표면적을 제공하는 복수의 돌기부 및 개재된 만입부를 형성하기 위해 망상으로 되어 있다. 돌기부는 길이 l1 및 단면 두께 a1을 가지고, 단면 두께 a1은 돌기부의 길이를 따라 단면 두께의 평균이 0보다 크고 100 마이크로미터 미만이 되도록 돌기부의 길이 l1에 따라서 변하고, 망상의 제1 및 제2 표면은 상호 침투한다.
다른 실시예에서, 돌기부는 망상의 제1 표면에 주기적으로, 비주기적으로 또는 임의로 배치된다.
다른 실시예에서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 2배인 표면적을 갖는다.
다른 실시예에서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 2.5배인 표면적을 갖는다.
다른 실시예에서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 3배인 표면적을 갖는다.
다른 실시예에서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 4배인 표면적을 갖는다.
다른 실시예에서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 5배인 표면적을 갖는다.
다른 실시예에서, 돌기부의 단면 두께 a1은 제1 전극의 기부에 접근하는 단면에서 증가한다.
다른 실시예에서, 제1 전극의 기부에서의 제1 위치에서의 돌기부의 단면적은 기부로부터 멀리 있는 제2 위치에서의 돌기부의 단면적보다 더 크다.
다른 실시예에서, 대향 전극은 매끈한 비망상 표면을 갖는다.
다른 실시예에서, 대향 전극은 매끈한 비망상 표면의 이론적 표면적의 적어도 1.5배의 표면적을 제공하는 복수의 제2 돌기부 및 개재된 만입부를 형성하기 위해 망상으로 되어 있는 제2 표면 및 기부를 구비하고, 제2 돌기부는 길이 l2 및 단면 두께 a2를 갖는다.
다른 실시예에서, 대향 전극은 매끈한 비망상 표면의 이론적 표면적의 적어도 1.5배의 표면적을 제공하는 복수의 제2 돌기부 및 개재된 만입부를 형성하기 위해 망상으로 되어 있는 제2 표면 및 기부를 구비한다. 제2 돌기부는 길이 l2 및 단면 두께 a2를 갖고, 단면 두께a2는 제2 돌기부의 길이 l2에 따라 변한다.
다른 실시예에서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 2배인 표면적을 갖는다.
다른 실시예에서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 2.5배인 표면적을 갖는다.
다른 실시예에서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 3배인 표면적을 갖는다.
다른 실시예에서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 3.5배인 표면적을 갖는다.
다른 실시예에서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 4배인 표면적을 갖는 2극 장치.
다른 실시예에서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 5배인 표면적을 갖는다.
다른 실시예에서, 망상의 제2 표면의 제2 돌기부는 주기적으로, 비주기적으로 또는 임의로 배치된다.
다른 실시예에서, 제2 돌기부의 단면 두께a2는 대향 전극의 기부에 접근하는 단면에서 증가한다.
다른 실시예에서, 제1 전극의 기부에서의 제1 위치에서의 돌기부의 단면적은 기부로부터 멀리 있는 제2 위치에서의 제2 돌기부의 단면적보다 더 크다.
다른 실시예에서, 망상의 제2 표면의 제2 돌기부의 단면적은 대향 전극의 기부에 접근하는 단면에서 증가한다.
다른 실시예에서, 대향 전극의 망상의 제2 표면은 제1 전극의 망상의 제1 표면에 대해 상보적이다.
다른 실시예에서, 상보적인 망상 표면들 사이의 평균 거리는 0보다 크고 100 마이크로미터 미만이다.
다른 실시예에서, 상보적인 망상 표면들 사이의 평균 거리는 0보다 크고 50 마이크로미터 미만이다.
다른 실시예에서, 상보적인 망상 표면들 사이의 평균 거리는 0보다 크고 25 마이크로미터 미만이다.
다른 실시예에서, 상보적인 망상 표면들 사이의 평균 거리는 0보다 크고 10 마이크로미터 미만이다.
다른 실시예에서, 본 발명은 상보적인 망상의 제1 및 제2 표면 사이에 배치된 전해질을 더 포함한다.
본 발명의 양호하고 제한되지 않는 실시예가 동봉한 도면을 참조하여 예를 들어 설명될 것이다.
Claims (67)
- 기부 및 망상의 제2 표면을 구비한 대향 전극에 대향하여 배치하기 위한 제1 표면 및 기부를 구비하는 제1 전극을 포함하는 2극 장치이며,상기 제1 표면은 매끈한 비망상 표면의 이론적 표면적의 적어도 1.5배의 표면적을 제공하는 복수의 돌기부 및 개재된 만입부를 형성하기 위해 망상으로 되어 있고,상기 돌기부는 길이 l1 및 단면 두께 a1을 가지고, 단면 두께 a1은 돌기부의 길이를 따라 단면 두께의 평균이 0보다 크고 100 마이크로미터 미만이 되도록 돌기부의 길이 l1에 따라서 변하고, 망상의 제1 및 제2 표면은 상호 침투하는 2극 장치.
- 제1항에 있어서, 돌기부는 망상의 제1 표면에 주기적으로 또는 임의로 배치되는 2극 장치.
- 제1항에 있어서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 2배인 표면적을 갖는 2극 장치.
- 제1항에 있어서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 2.5배인 표면적을 갖는 2극 장치.
- 제1항에 있어서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 3배인 표면적을 갖는 2극 장치.
- 제1항에 있어서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 4배인 표면적을 갖는 2극 장치.
- 제1항에 있어서, 제1 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 5배인 표면적을 갖는 2극 장치.
- 제1항에 있어서, 돌기부의 단면 두께 a1은 제1 전극의 기부에 접근하는 단면에서 증가하는 2극 장치.
- 제1항에 있어서, 제1 전극의 기부에서의 제1 위치에서의 돌기부의 단면적은 기부로부터 멀리 있는 제2 위치에서의 돌기부의 단면적보다 더 큰 2극 장치.
- 제1항에 있어서, 대향 전극은 매끈한 비망상 표면을 갖는 2극 장치.
- 제1항에 있어서, 대향 전극은 매끈한 비망상 표면의 이론적 표면적의 적어도 1.5배의 표면적을 제공하는 복수의 제2 돌기부 및 개재된 만입부를 형성하기 위해 망상으로 되어 있는 제2 표면 및 기부를 구비하고, 상기 제2 돌기부는 길이 l2 및 단면 두께 a2를 갖는 2극 장치.
- 제1항에 있어서, 대향 전극은 매끈한 비망상 표면의 이론적 표면적의 적어도 1.5배의 표면적을 제공하는 복수의 제2 돌기부 및 개재된 만입부를 형성하기 위해 망상으로 되어 있는 제2 표면 및 기부를 구비하고, 상기 제2 돌기부는 길이 l2 및 단면 두께 a2를 갖고, 상기 단면 두께a2는 제2 돌기부의 길이 l2에 따라 변하는 2극 장치.
- 제12항에 있어서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 2배인 표면적을 갖는 2극 장치.
- 제12항에 있어서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 2.5배인 표면적을 갖는 2극 장치.
- 제12항에 있어서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 3배인 표면적을 갖는 2극 장치.
- 제12항에 있어서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 3.5배인 표면적을 갖는 2극 장치.
- 제12항에 있어서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 4배인 표면적을 갖는 2극 장치.
- 제12항에 있어서, 제2 표면은 매끈한 비망상 구조의 이론적 면적의 적어도 5배인 표면적을 갖는 2극 장치.
- 제12항에 있어서, 망상의 제2 표면의 제2 돌기부는 주기적으로, 비주기적으로 또는 임의로 배치되는 2극 장치.
- 제12항에 있어서, 제2 돌기부의 단면 두께a2는 대향 전극의 기부에 접근하는 단면에서 증가하는 2극 장치.
- 제12항에 있어서, 제1 전극의 기부에서의 제1 위치에서의 돌기부의 단면적은 기부로부터 멀리 있는 제2 위치에서의 제2 돌기부의 단면적보다 더 큰 2극 장치.
- 제12항에 있어서, 망상의 제2 표면의 제2 돌기부의 단면적은 대향 전극의 기부에 접근하는 단면에서 증가하는 2극 장치.
- 제12항에 있어서, 망상의 제1 및 제2 표면은 상호 침투하는 2극 장치.
- 제12항에 있어서, 대향 전극의 망상의 제2 표면은 제1 전극의 망상의 제1 표면에 대해 상보적인 2극 장치.
- 제23항 또는 제24항에 있어서, 상보적인 망상 표면들 사이의 평균 거리는 0보다 크고 100 마이크로미터 미만인 2극 장치.
- 제23항 또는 제24항에 있어서, 상보적인 망상 표면들 사이의 평균 거리는 0보다 크고 50 마이크로미터 미만인 2극 장치.
- 제23항 또는 제24항에 있어서, 상보적인 망상 표면들 사이의 평균 거리는 0보다 크고 25 마이크로미터 미만인 2극 장치.
- 제23항 또는 제24항에 있어서, 상보적인 망상 표면들 사이의 평균 거리는 0보다 크고 10 마이크로미터 미만인 2극 장치.
- 제12항에 있어서, 상보적인 망상의 제1 및 제2 표면 사이에 배치된 전해질을 더 포함하는 2극 장치.
- 삭제
- 제1항에 있어서, 상기 제1 전극 및 대향 전극은 다공성인 2극 장치.
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