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KR930001574A - 내부 전원전압 발생회로 - Google Patents

내부 전원전압 발생회로 Download PDF

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Publication number
KR930001574A
KR930001574A KR1019910009659A KR910009659A KR930001574A KR 930001574 A KR930001574 A KR 930001574A KR 1019910009659 A KR1019910009659 A KR 1019910009659A KR 910009659 A KR910009659 A KR 910009659A KR 930001574 A KR930001574 A KR 930001574A
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South Korea
Prior art keywords
terminal
voltage
power supply
output
supply voltage
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KR1019910009659A
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English (en)
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KR940003406B1 (ko
Inventor
진대제
전준영
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김광호
삼성전자 주식회사
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Priority to KR1019910009659A priority Critical patent/KR940003406B1/ko
Priority to US07/724,796 priority patent/US5146152A/en
Priority to TW080105360A priority patent/TW238439B/zh
Priority to FR9109071A priority patent/FR2677793B1/fr
Priority to DE4124427A priority patent/DE4124427C2/de
Priority to NL9101377A priority patent/NL193703C/nl
Priority to ITMI912287A priority patent/IT1251297B/it
Priority to GB9118530A priority patent/GB2256731B/en
Priority to SU5001410/A priority patent/RU2146388C1/ru
Priority to CN91108584A priority patent/CN1090775C/zh
Priority to JP3244106A priority patent/JPH0793006B2/ja
Publication of KR930001574A publication Critical patent/KR930001574A/ko
Application granted granted Critical
Publication of KR940003406B1 publication Critical patent/KR940003406B1/ko
Priority to HK28597A priority patent/HK28597A/xx

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Power Sources (AREA)

Abstract

내용 없음

Description

내부 전원전압 발생회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 내부 전원전압 발생 회로도.
제2도는 제1도의 출력 특성.
제3도는 제1도의 기준전압 발생 회로의 다른 실시예.
제4도는 본 발명에 의한 내부 전원전압 발생 회로의 구성도.
제5도는 제4도의 출력 특성.
제6도는 제4도의 일실시예.
제7도는 온도 변화에 따른 모오스 트랜지스터의 전류 구동력 감소 정도를 수치로 나타낸 표.

Claims (8)

  1. 외부 전원전압의 출력 전압을 소정의 강하된 전압으로 출력단을 통해 메모리 소자에 인가하는 내부 전원전압 발생회로에 있어서, 온도가 올라갈 수록 출력전압을 상승시키기 위하여 저항치가 달라지는 부하용 제1가변저항소자 및 제2가변저항소자를 상기 출력단과 접지전압 사이에 직렬로 연결하고 그 공통단자를 출력노드로 하는 분압 회로를 구비함을 특징으로 하는 내부 전원전압 발생회로.
  2. 제1항에 있어서, 온도가 상승할수록 상기 부하용 제1가변 저항에 대한 저항증가 비가 상기 제2가변 저항에 대한 저항증가비 보다 더 큼을 특징으로 하는 내부 전원전압 발생회로.
  3. 제1항에 있어서, 상기 부하용 제1가변저항소자 및 제2가변저항소자가, 한쪽 단자가 출력단에 접속되고, 게이트 및 다른 한쪽 단자가 다이오드 접속된 제1모오스 트랜지스터와 한쪽 단자가 상기 출력노드에 접속되고 게이트 및 다른 한쪽 단자가 접지전압단에 다이오드 접속된 제2모오스 트랜지스터로 이루어지면서 상기 제1모오스 트랜지스터의 채널 길이가 상기 제2모오스 트랜지스터의 채널 길이보다 더 큼을 특징으로 하는 내부 전원발생회로.
  4. 외부로부터 공급되는 외부 전원전압을 소정의 레벨로 강하시켜 내부 전원전압으로 사용하는 반도체 집적회로에 있어서, 외부 전원전압이 인가되어 기준전압을 발생시키는 기준전압 발생회로(50)와, 상기 기준전압 발생회로(50)의 출력에 연결된 제1입력 라인 및 소정의 제2입력라인을 가지는 비교기(60)와, 상기 비교기(60)의 출력을 입력하고 출력노드를 통해 내부 전원전압을 발생시키는 출력단(70)과, 상기 출력단(70)의 출력노드 전압을 입력으로 하고 출력이 상기 비교기(60)의 제2입력 라인으로 연결되어 상기 출력단(70)의 출력 전압을 온도가 올라갈 수록 상승시키는 분압회로(80)로 구성됨을 특징으로 하는 내부 전원전압 발생회로.
  5. 제4항에 있어서, 상기 수단이, 상기 출력노드(38)에 한쪽 단자가 접속된 제1저항(35)과, 상기 제1저항(35)의 다른 한쪽 단자에 콜렉터와 베이스가 공통 접속되고 접지전압에 에미터가 접속된 제1바이폴라 트랜지스터(32)와, 상기 출력노드(38)에 한쪽 단자가 접속된 제2저항(36)과, 상기 제2저항(36)의 다른 한쪽 단자에 콜렉터가 접속되고 상기 제1바이폴라 트랜지스터(32)의 콜렉터와 베이스가 접속된 제2바이폴라 트랜지스터(33)와, 상기 제2바이폴라 트랜지스터(33)의 에미터에 한쪽 단자가 접속되고 접지전압단에 다른 한쪽 단자가 접속된 제3저항(37)과, 상기 출력노드(38)에 콜렉터가 접속되고 상기 제2바이폴라 트랜지스터(33)의 콜렉터에 베이스가 접속되고 접지전압단에 에미터가 접속된 제3바이폴라 트랜지스터(34)로 이루어짐을 특징으로 하는 내부 전원전압 발생회로.
  6. 제4항에 있어서, 상기 비교기(60)가, 외부 전원전압단에 접속된 제1피모오스 트랜지스터(39)와, 외부 전원전압에 소오스가 접속되고 게이트와 드레인 상기 제1피모오스 트랜지스터(39)의 게이트에 공통 접속된 제2피모오스 트랜지스터(40)와, 게이트가 상기 제1입력라인에 접속되고 드레인이 상기 제1피모오스 트랜지스터(39)의 드레인에 접속된 제1엔모오스 트랜지스터(41)와, 게이트가 상기 제2입력라인에 접속되고 드레인이 상기 제2피모오스 트랜지스터(39)의 드레인에 접속된 제2엔모오스 트랜지스터(43)와 게이트가 상기 제1입력라인에 접속되고 소오스 접지전압단에 접속된 제3엔모오스 트랜지스터(42)와, 피모오스 트랜지스터(39) 및 상기 제1엔모오스 트랜지스터(41)의 공통단자인 출력노드(44)로 이루어짐을 특징으로 하는 내부 전원전압 발생회로.
  7. 제4항에 있어서, 상기 출력단(70)이, 외부 전원전압단에 소오스가 접속되고 상기 비교기(60)의 출력노드(44)에 게이트가 접속된 피모오스 트랜지스터(45)와, 상기 피모오스 프랜지스터(45)의 드레인에 접속되어 내부전원전압을 발생하는 출력노드(49)로 이루어짐을 특징으로 하는 내부 전원전압 발생회로.
  8. 제4항에 있어서, 상기 분압회로(80)가 상기 출력단(70)의 출력노드(49)에 소오스가 접속되고 게이트 및 드레인이 다이오드 접속된 제1피모오스 트랜지스터(46)와, 상기 제1피모오스 트랜지스터(46)의 드레인에 소오스에 연결되고 게이트 및 드레인이 접지전압단에 다이오드 접속된 제2피모오스 트랜지스터(47)와, 상기 제1 및 제2피모오스 트랜지스터(46), (47)의 공통단자 및 상기 비교기(60)의 제2입력라인에 공통 접속된 출력노드(48)로 이루어짐을 특징으로 하는 내부 전원전압 발생회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910009659A 1991-06-12 1991-06-12 내부 전원전압 발생회로 KR940003406B1 (ko)

Priority Applications (12)

Application Number Priority Date Filing Date Title
KR1019910009659A KR940003406B1 (ko) 1991-06-12 1991-06-12 내부 전원전압 발생회로
US07/724,796 US5146152A (en) 1991-06-12 1991-07-02 Circuit for generating internal supply voltage
TW080105360A TW238439B (ko) 1991-06-12 1991-07-10
FR9109071A FR2677793B1 (fr) 1991-06-12 1991-07-18 Circuit pour produire une tension d'alimentation interne.
DE4124427A DE4124427C2 (de) 1991-06-12 1991-07-23 Schaltung zum Erzeugen einer inneren temperaturstabilisierten Versorgungsspannung
NL9101377A NL193703C (nl) 1991-06-12 1991-08-12 Schakeling voor de voeding van een halfgeleidergeheugeninrichting.
ITMI912287A IT1251297B (it) 1991-06-12 1991-08-26 Circuito per generare una tensione di alimentazione interna
GB9118530A GB2256731B (en) 1991-06-12 1991-08-29 Circuit for generating internal supply voltage
SU5001410/A RU2146388C1 (ru) 1991-06-12 1991-08-29 Схема генерирования внутреннего питающего напряжения
CN91108584A CN1090775C (zh) 1991-06-12 1991-08-30 产生内部电源电压的电路
JP3244106A JPH0793006B2 (ja) 1991-06-12 1991-08-30 内部電源電圧発生回路
HK28597A HK28597A (en) 1991-06-12 1997-03-13 Circuit for generating internal supply voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910009659A KR940003406B1 (ko) 1991-06-12 1991-06-12 내부 전원전압 발생회로

Publications (2)

Publication Number Publication Date
KR930001574A true KR930001574A (ko) 1993-01-16
KR940003406B1 KR940003406B1 (ko) 1994-04-21

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KR1019910009659A KR940003406B1 (ko) 1991-06-12 1991-06-12 내부 전원전압 발생회로

Country Status (12)

Country Link
US (1) US5146152A (ko)
JP (1) JPH0793006B2 (ko)
KR (1) KR940003406B1 (ko)
CN (1) CN1090775C (ko)
DE (1) DE4124427C2 (ko)
FR (1) FR2677793B1 (ko)
GB (1) GB2256731B (ko)
HK (1) HK28597A (ko)
IT (1) IT1251297B (ko)
NL (1) NL193703C (ko)
RU (1) RU2146388C1 (ko)
TW (1) TW238439B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100577552B1 (ko) * 1999-04-20 2006-05-08 삼성전자주식회사 반도체 메모리 장치의 내부 전압 변환회로
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ITMI912287A1 (it) 1992-12-13
DE4124427A1 (de) 1992-12-17
RU2146388C1 (ru) 2000-03-10
KR940003406B1 (ko) 1994-04-21
CN1090775C (zh) 2002-09-11
FR2677793A1 (fr) 1992-12-18
GB2256731B (en) 1996-01-10
NL9101377A (nl) 1993-01-04
DE4124427C2 (de) 1994-06-30
GB2256731A (en) 1992-12-16
JPH04366492A (ja) 1992-12-18
ITMI912287A0 (it) 1991-08-26
US5146152A (en) 1992-09-08
TW238439B (ko) 1995-01-11
CN1067751A (zh) 1993-01-06
GB9118530D0 (en) 1991-10-16
IT1251297B (it) 1995-05-08
HK28597A (en) 1997-03-21
FR2677793B1 (fr) 1997-01-31
NL193703B (nl) 2000-03-01
JPH0793006B2 (ja) 1995-10-09

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