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CN1981240B - 使用乙烯基醚交联剂的减反射涂层 - Google Patents

使用乙烯基醚交联剂的减反射涂层 Download PDF

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CN1981240B
CN1981240B CN2005800132461A CN200580013246A CN1981240B CN 1981240 B CN1981240 B CN 1981240B CN 2005800132461 A CN2005800132461 A CN 2005800132461A CN 200580013246 A CN200580013246 A CN 200580013246A CN 1981240 B CN1981240 B CN 1981240B
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CN1981240A (zh
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D·J·格雷罗
R·C·考克斯
M·W·维默
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Abstract

提供了新颖的可湿显影的减反射涂层组合物及其使用方法。所述组合物包含与交联剂和光致生酸剂一起溶解在溶剂体系中的、包含酸官能团的聚合物和/或低聚物。优选的酸官能团是羧酸，优选的交联剂是乙烯基醚交联剂。在使用时，将所述组合物施涂到基材上，并进行热交联。在曝光的时候，固化的组合物将解交联，使得它们可溶于常规的光刻胶显影溶液(例如碱性光刻胶)。

Description

使用乙烯基醚交联剂的减反射涂层
联邦资助的研究/开发项目
本发明在美国军方空间和导弹防御指挥部(U.S.Army Space and MissileDefense Command)给予的第DASG60-01-C-0047号合同的资助下进行。美国政府享有本发明的一部分权利。
发明背景
相关申请
本申请要求2004年4月29日提交的名为ANTI-REFLECTIVE COATINGUSING VINYL ETHER CROSSLINKERS的临时申请第60/566,329号的优先权，该申请全文参考结合入本文中。
发明领域
本发明涉及新颖的可湿显影减反射涂层组合物及其使用方法。
现有技术描述
随着特征尺寸减小至小于110纳米，半导体工业需要新的更加先进的材料以达到设定的目标。需要对光刻胶和底部减反射涂层进行改进，以获得高分辨率的光刻目标。例如，由于新的光刻胶比老一代的材料薄得多，在底部减反射涂层和基材蚀刻步骤中发生的光刻胶厚度损失成了重要的问题。在光刻胶厚度减小的同时，并不能期望底部减反射涂层厚度以相同的速度减小，这使得光刻胶损失的问题进一步复杂化。一种解决该问题的方法是通过使用可湿显影的底部减反射涂层，取消底部减反射涂层蚀刻步骤。
可湿显影的底部减反射涂层通常使用可溶于碱性介质的聚酰胺酸作为聚合物粘合剂，使得可以在光刻胶显影的时候除去底部减反射涂层。通过在加热条件下使酰胺酸转化为酰亚胺，使得这些常规的可湿显影的底部减反射涂层不溶于光刻胶溶剂。该工艺可顺利进行，但是它具有两个局限性：(1)使得底部减反射涂层不溶于有机溶剂、但是可溶于碱性显影剂的烘焙温度范围可能很窄(小于10℃)；(2)所述湿显影工艺是各向同性的，这意味着底部减反射涂层垂直方向的去除速率与水平方向的速率相等，这对光刻线路造成侧壁腐蚀。尽管对于较大的几何结构(大于0.2微米)，这并不算问题，但是对于较小的光刻线路尺寸，这很容易导致线路上升和线路破裂。
发明简述
本发明通过提供新颖的、可用于微电子器件制造的可湿显影组合物，克服了现有技术的可湿显影减反射涂层的问题。
更具体来说，本发明的组合物包含溶解或分散在溶剂体系中的选自以下的化合物：聚合物、低聚物和它们混合物。以组合物中所有组分的总重量为100重量％计，所述组合物中的化合物的含量优选约为0.5-10重量％，优选约为0.5-5重量％，更优选约为1-4重量％。
如果所述化合物是聚合物，优选其平均分子量约为1,000-100,000道尔顿，更优选约为1,000-25,000道尔顿。优选的聚合物包括选自以下的聚合物：脂族聚合物、丙烯酸酯、甲基丙烯酸酯、聚酯、聚碳酸酯、酚醛清漆、聚酰胺酸或它们的混合物。
如果所述化合物是低聚物，优选其分子量约为500-3,000道尔顿，更优选约为500-1,500道尔顿。优选的低聚物包括取代和未取代的丙烯酸酯、甲基丙烯酸酯、酚醛清漆、异氰尿酸酯、缩水甘油醚或它们的混合物。
无论所述化合物是低聚物或聚合物，无论聚合物主链或低聚物核是何种结构，该化合物优选包含酸官能团。以该化合物的总重量为100重量％计，所述化合物中酸基团的含量优选至少约为5重量％，更优选约为5-90重量％，更优选约为5-50重量％。优选的酸基团是非酚基团，例如羧酸(-COOH)。
与现有技术中的组合物不同，所述酸基优选未被保护基团保护。也即是说至少约95％，优选至少约98％，优选约100％的酸基团无保护基团。保护基团是阻止酸反应的保护基团。
由于保护基团并不是本发明必需的，还优选所述化合物不对酸敏感。对酸敏感的聚合物或低聚物是指包含在存在酸的条件下能够被除去、分解或以其它方式转化的保护基团的聚合物或低聚物。
在另一实施方式中，可使用被保护的酸基团和未受保护的酸基团的结合。在这些实施方式中，被保护的酸基团与未被保护的酸基团的摩尔比约为1:3至3:1，更优选约为1:2至1:1。
还优选本发明的组合物包含发色团(光衰减化合物或部分)。发色团可以与化合物结合(与化合物上的官能团结合，或者直接与聚合物主链或低聚物核结合)，或者发色团可以简单地物理混合在所述组合物中。以化合物的总重量为100重量％计，组合物中发色团的含量应约为5-50重量％，优选约为20-40重量％。根据用来处理所述组合物的波长选择发色团。例如，在248纳米的波长下，优选的发色团包括萘(例如萘甲酸甲基丙烯酸酯、3，7-二羟基萘甲酸)、杂环发色团、咔唑、蒽(例如甲基丙烯酸-9-蒽甲酯，9-蒽羧酸)或上述化合物的官能部分。在193纳米的波长下，优选的发色团包括取代的和未取代的苯基、杂环发色团(例如呋喃环、噻吩环)或者上述基团的官能部分。优选的本发明化合物还可包含交联剂。
优选的交联剂是乙烯基醚交联剂。优选的是，所述乙烯基醚交联剂是多官能的，更优选是三官能和四官能的。
优选的乙烯基醚交联剂具有以下化学式
R-(X-O-CH＝CH2)n，
式中R选自芳基(优选C6-C12)和烷基(优选C1-C18，更优选C1-C10)，各X独立地选自：烷基(优选C1-C18，更优选C1-C10)；烷氧基(优选C1-C18，更优选C1-C10)；羧基；以及一个或多个上述基团的组合，n为2-6。最优选的乙烯基醚交联剂包括选自以下的基团：乙二醇乙烯基醚，三羟甲基丙烷三乙烯基醚，1，4-环己烷二甲醇二乙烯基醚，或它们的混合物。另一种优选的乙烯基醚交联剂具有选自以下的结构式：
和
优选的组合物还包含催化剂。优选的催化剂是生酸剂(acid generator)，特别是光致生酸剂(photoacid generator)(″PAG，″同时包括离子型的和/或非离子型的)。任何能够在光的存在下制得酸的PAG都是合适的。优选的PAG包括鎓盐(例如全氟磺酸三苯基锍，如全氟丁基磺酸三苯基锍(triphenyl sulfonium nonaflate)和三氟甲磺酸三苯基锍(triphenyl sulfonium triflate))，磺酸肟(例如CIBA销售的商品名为的商品)，和三嗪(例如购自Midori Kagaku公司的
Figure S05813246120061030D000043
以所述组合物中聚合物和低聚物固体的总重量为100重量％计，该组合物优选包含约0.1-10重量％的催化剂，更优选包含约1-5重量％的催化剂。
应当理解，该组合物中还可包含大量其它的任选组分。通常的任选组分包括表面活性剂、胺碱和助粘剂。
与实施方式无关，所述减反射组合物是通过简单地将聚合物、低聚物或其混合物分散或溶解在合适的溶剂体系中制得的，优选该分散或溶解过程在常规条件下进行足够的时间，以形成相当均匀的分散体。其他组分(例如交联剂，PAG)优选与所述化合物一起分散或溶解在溶剂体系中。
优选的溶剂体系包含选自以下的溶剂：丙二醇甲醚乙酸酯(PGMEA)，丙二醇甲醚(PGME)，丙二醇正丙醚(PnP)，乳酸乙酯或它们的混合物。较佳的是，所述溶剂体系的沸点约为50-250℃，更优选约为100-175℃。以组合物的总重量为100重量％计，所述溶剂体系的用量应约为80-99重量％，优选约为95-99重量％。
将所述组合物施涂到基材(例如微电子基材)上的方法简单地包括通过任何已知的施涂方法(包括旋涂)将一定量的所述组合物施涂到基材表面上。所述基材可以是任何常规的电路基材，合适的基材可以是平坦的，或者可包括形貌结构(例如接触孔或通孔、沟槽)。示例性的基材包括硅、铝、钨、硅化钨、砷化镓、锗、钽、亚硝酸钽、SiGe、低k介电层、介电层(例如二氧化硅)和离子注入层。
达到所需覆盖之后，应将所得的层加热至大约100-250℃，优选加热至大约120-200℃，使得层中的化合物交联。在聚合物或低聚物包含羧酸基，且交联剂是乙烯基醚交联剂的实施方式中，所述交联的聚合物或低聚物将包含下式所示的缩醛链：
所述交联层将充分交联，使其基本不溶于常规的光刻胶溶剂。因此，当对其进行剥离试验的时候，本发明涂层的剥离百分比约小于5％，优选约小于1％，更优选约为0％。剥离试验包括首先测定固化层的厚度(在五个不同的区域测量，然后取平均值)。这是平均初始膜厚。然后将溶剂(例如乳酸乙酯)在固化的膜上搅拌约10秒钟，然后在大约2000-3500rpm的转速下离心干燥20-30秒，以除去溶剂。使用椭圆光度法在晶片上的五个不同的点上再次测量厚度，确定这些测量的平均值。这是最终平均膜厚度。
剥离量是初始平均膜厚和最终平均膜厚之差。剥离百分比为：
Figure S05813246120061030D000052
所述交联的层还具有优良的吸光性。在所用的波长(例如157纳米，193纳米，248纳米，365纳米)下，所述固化的减反射层的n值至少约为1.3，优选约为1.4-2.0，k值至少约为0.1，优选约为0.2-0.8。在所用的波长(例如157纳米，193纳米，248纳米，365纳米)下，所述固化的层的OD至少约为5/微米，优选约为5-15/微米，更优选约为10-15微米。
在这些层固化以后，可以根据具体制造过程的需要进行以后的步骤。例如可以将光刻胶施涂在固化的层上，然后通过暴露于合适波长的光，再对曝光后的光刻胶进行显影，从而形成图案。较佳的是，当光刻胶曝光的时候，本发明的涂层也曝光，在曝光的时候，PAG生成酸，这种酸使得层中的化合物“解交联”。也即是说，酸使得化合物和交联剂在热交联的时候形成的键断裂。当羧酸是聚合物或低聚物上的酸基团的时候，解交联会形成组合物中原本含有的相同聚合物或低聚物，以及醇和乙酰基醛。下面的历程显示了该反应(其中R表示聚合物主链或低聚物核，R’表示乙烯基醚交联剂余下的部分)。
应理解在发生这种解交联之后，本发明的涂层变得可以湿显影。也即是说，可以使用氢氧化四甲基铵和KOH显影剂之类的常规水性显影剂将已经曝光的固化的组合物基本(优选完全)除去。一些这样的显影剂是在市场上购得的商品名为PD523AD(购自JSR Micro)，MF-319(购自美国马萨诸塞州Shipley)和NMD3(购自日本TOK)的显影剂。至少约95％，优选至少约99％，更优选100％的本发明的涂层将被氢氧化四甲基铵和/或KOH显影剂之类的碱显影剂除去。这种曝光之后在市售可得的显影剂中的高溶解百分率可以缩短生产过程并降低成本，因此相对于现有技术具有显著的优点。
优选实施方式详述
以下实施例描述了本发明的优选方法。但是应当理解，这些实施例仅仅是说明性的，不会对本发明的总体范围构成限制。
材料和方法
1.四官能乙烯基醚交联剂的室内制备
FW：  449.79       88.11     23478.55
gr：  3.6976       2.9       0.8
mmol：8.22         32.9      34.8
该反应在250毫升的三颈圆底烧瓶中，在氮气气氛下进行。Na方粒料在使用前用己烷淋洗，以除去矿物油，快速置于管瓶中进行称重，然后转移入含有50毫升THF的烧瓶中。用加液漏斗滴加(约15分钟)醇的THF溶液(20毫升)，然后加热至回流，直至所有Na溶解(约30分钟)。该溶液为淡黄色均一溶液。将溶于THF的四溴杜烯(15毫升)滴加入该反应烧瓶中，使其回流过夜。在加入的同时，该混合物变为非均相(NaBr沉淀)。
冷却之后，过滤这些盐，并用THF淋洗。在旋转蒸发仪中除去THF，将余下的油重新溶解在CHCl3(25毫升)中。该氯仿溶液先用水洗涤(2×25毫升)，然后用盐水洗涤(NaCl饱和盐水，25毫升)。使有机层通过硅胶床，以干燥有机层。除去溶剂。产物在真空下进一步干燥。
2.三官能乙烯基醚交联剂的室内制备
将乙二醇乙烯基醚(6克)和三乙胺(7.5毫升)混合在醚(40毫升)中，并用氯化苯均三酸(6克)的醚溶液(40％)逐滴处理。加入之后，该混合物加热至回流，处理1.5小室。过滤除去剩余的盐，该醚溶液用10％的NaOH(2×25毫升)洗涤，用水(25毫升)洗涤，然后用无水硫酸镁干燥。在负压下除去溶剂之后，得到淡黄色油状物(产率69％)。
实施例1
不含对酸敏感的基团的聚合物组合物。
在氮气气氛下将甲基丙烯酰氧基乙基邻苯二甲酸酯(28.9毫摩，得自Aldrich)和2，2′-偶氮二异丁腈(″AIBN，″0.58毫摩尔自由基引发剂，得自Aldrich)混合在50毫升四氢呋喃(″THF，″得自Aldrich)中，并加热至回流，处理15小时。使该反应冷却，浓缩至大约25毫升，然后在200毫升己烷中沉淀。在过滤和干燥之后，收集到大约8克剩余的白色粉末。使用聚苯乙烯标样，通过凝胶渗透色谱法(″GPC″)测量聚合物的分子量(″Mw″)，测得分子量为68,400。
通过以下步骤制备了193纳米底部减反射涂层：制备了包含乳酸乙酯(″EL，″得自General Chemical)、上面制得的聚合物、28重量％的Vectomer5015(得自Aldrich的乙烯基醚交联剂)和4重量％的全氟丁基磺酸三苯基锍(得自Aldrich的PAG)的3％固体制剂，并用0.1微米的终点过滤器过滤。所述交联剂和PAG的量是以聚合物重量为基准计。
在1500rpm的转速下将上述制剂旋涂在硅基材上，然后在160℃烘焙。用EL淋洗该膜以确定对光刻胶溶剂的耐受能力，曝光2秒，在130℃下进行曝光后烘焙(″PEB″)加热，在显影剂(氢氧化四甲基铵或″TMAH，″商品名为PD523AD，购自JSR Micro)中浸渍60秒，使得底部减反射涂层解交联并除去。下表1显示了底部减反射涂层具有良好的耐溶剂性，只能在曝光之后用碱性显影剂除去。该实施例说明该交联/解交联工艺不需要包含对酸敏感的基团的聚合物。
表1
a曝光后烘焙
实施例2
包含发色团、酸和增溶剂的底部减反射涂层
在氮气气氛下将甲基丙烯酸(″MAA，″31.2毫摩尔，得自Aldrich)、甲基丙烯酸叔丁酯(″tBMA，″26.0毫摩尔，得自Aldrich)、甲基丙烯酸-9-蒽甲酯(″9-AMMA，″14.5毫摩尔，得自St-Jean Photochemicals Inc.)和AIBN(1.4毫摩尔)混合在60毫升THF中，并加热回流19小时。使该反应冷却，浓缩至大约35毫升，然后在150毫升己烷中沉淀。过滤和干燥之后，收集到大约10克淡黄色粉末。使用聚苯乙烯标样和GPC测得聚合物的Mw为23,800。
制备了包含所述聚合物、PGME(得自General Chemical)、PGMEA(得自General Chemical)、10％的如上所述在室内制备的四官能乙烯基醚交联剂和4％的三氟甲磺酸三苯基锍(得自Aldrich的PAG)的3％固体制剂，并用0.1微米的终点过滤器过滤。所述交联剂和PAG的量是以聚合物的重量为基准计。在1500rpm的转速下将上述制剂旋涂在硅基材上，然后在160℃下烘焙。使用可变角椭圆分光光度计(″VASE″)在248纳米测得光学常数为k＝0.42，n＝1.4589。用EL淋洗该膜，以测试对光刻胶溶剂的耐受能力。在淋洗和旋转干燥之后，膜厚无变化。将固化的膜浸入0.26N的TMAH溶液中，未发生膜厚损失。然而，使膜在汞-氙灯的灯光下曝光2秒，并在130℃下进行90秒的曝光后烘焙之后，该膜变得可溶于显影剂。
实施例3
用聚合物组合物控制光学性质
使用实施例2的步骤，采用各种发色团(9-AMMA)含量制备了一些聚合物，以证明可以在保持溶解性质的前提下，控制底部减反射涂层的光学性质。制备了包含PGME、PGMEA、10％的如上所述在室内制备的四官能乙烯基醚交联剂和4％的三氟甲磺酸三苯基锍PAG的3％固体制剂，并用0.1微米的终点过滤器过滤。
表2显示了通过增加聚合物中的发色团加入量，可以控制光密度和基材反射性。
表2
Figure S05813246120061030D000091
a以组合物中固体的总摩尔量为基准计
实施例4
包含酚类聚合物的比较例
制备了比较例以证明与酚醛树脂交联的乙烯基醚无法提供能够防止被光刻胶溶剂剥离的足够的交联密度。
在此过程中，将0.5克聚羟基苯乙烯(″PHS，″得自DuPont)，0.02克三嗪PAG(TAZl07，得自Midori Kagaku公司)，8.5克EL和各种量的室内制备的三羧基苯基三乙烯基醚混合起来，并用0.1微米的终点过滤器过滤。还制备了两种另外的制剂，其中将9-蒽羧酸(″9-ACA,″得自Aldrich的发色团)加入所述组合物中，以形成用于248纳米光刻的底部减反射涂层。将膜旋涂在硅基材上，然后在最高达205℃的各种温度下烘焙。表3显示了所得的结果，在所有情况下，当使用EL淋洗的时候，底部减反射涂层完全剥离。
表3
 
聚合物 交联剂：PHS之比 烘焙温度(℃) PAG 发色团 EL剥离(膜厚变化％)
PHS 2:1 150,205 TAZ107 -- 100
PHS 4:1 150,205 TAZ107 -- 100
PHS 2:1 100-205a TAZ107 9-ACA 100
PHS 4:1 100-205 TAZ107 9-ACA 100
a在此温度范围内以10℃的间隔进行试验。

Claims (42)

1.下述组合物在形成抗反射涂层中的用途，所述抗反射涂层用于形成微电子器件，所述组合物包含：
选自聚合物的化合物，所述化合物包含非酚基的酸基和发色团；
乙烯基醚交联剂，它选自：
三羟甲基丙烷三乙烯基醚、1，4-环己烷二甲醇二乙烯基醚、
Figure FSB00000804100500011
或它们的混合物；和
溶剂体系，所述化合物和交联剂溶解或分散在所述溶剂体系中，所述组合物是可湿显影的。
2.如权利要求1所述用途，其特征在于所述组合物还包含生酸剂。
3.如权利要求2所述的用途，其特征在于，所述生酸剂是光致生酸剂。
4.如权利要求1所述的用途，其特征在于，所述化合物不是对酸敏感的。
5.如权利要求1所述的用途，其特征在于，所述酸基无保护基团。
6.如权利要求1所述的用途，其特征在于，所述化合物包含保护的酸基和未保护的酸基，所述保护的酸基和未保护的酸基的摩尔比为1∶3至3∶1。
7.如权利要求1所述的用途，其特征在于，以所述化合物的总重量为100重量％计，所述组合物中的发色团含量为5-50重量％。
8.如权利要求1所述的用途，其特征在于，所述酸基是羧酸。
9.如权利要求1所述的用途，其特征在于，所述聚合物选自脂族聚合物、聚丙烯酸酯、聚甲基丙烯酸酯、聚酯、聚碳酸酯、酚醛清漆、聚酰胺酸和它们的混合物。
10.如权利要求1所述的用途，其特征在于，所述聚合物的平均分子量为1,000-100,000道尔顿。
11.如权利要求1所述的用途，其特征在于，所述聚合物的平均分子量为500-3,000道尔顿。
12.如权利要求1所述的用途，其特征在于，将组合物的总重量作为100％计，所述溶剂体系在该组合物中占95-99重量％。
13.如权利要求1所述的用途，其特征在于所述乙烯基醚交联剂是四官能乙烯基醚交联剂。
14.一种形成微电子结构的方法，所述方法包括以下步骤：
提供具有表面的基材；
将组合物施涂在所述表面上，所述组合物包含：
选自聚合物的化合物，所述化合物包含非酚基的酸基和发色团；
乙烯基醚交联剂，它选自三羟甲基丙烷三乙烯基醚、1，4-环己烷二甲醇二乙烯基醚、
或它们的混合物；
溶剂体系，所述化合物和交联剂溶解或分散在所述溶剂体系中，
使所述组合物中的化合物交联，形成一层不溶于光刻胶溶剂中的组合物层，并且形成包含具有以下结构式的连接基团的交联化合物
在所述组合物上施涂光刻胶层；
使所述组合物曝光，形成所述组合物的曝光部分；
使所述组合物与显影剂接触，以从所述表面除去所述曝光的部分。
15.如权利要求14所述的方法，其特征在于，所述聚合物的平均分子量为1,000-100,000道尔顿。
16.如权利要求14所述的方法，其特征在于，所述聚合物的平均分子量为500-3,000道尔顿。
17.如权利要求14所述的方法，其特征在于，所述交联步骤包括使所述化合物热交联。
18.如权利要求14所述的方法，其特征在于，所述曝光步骤制得可溶解在光刻胶显影剂中的组合物层。
19.如权利要求14所述的方法，其特征在于，所述曝光步骤使得以下结构式所示的连接基团中的键*断裂
20.如权利要求14所述的方法，其特征在于，所述基材是微电子基材。
21.如权利要求20所述的方法，其特征在于，所述基材选自硅、铝、钨、硅化钨、砷化镓、锗、钽、亚硝酸钽、SiGe、离子注入层或介电层。
22.如权利要求21所述的方法，其特征在于，所述介电层是低k介电层。
23.如权利要求14所述的方法，其特征在于，
所述基材还包括限定孔的结构，所述结构包括侧壁和底壁；
所述施涂步骤包括将所述组合物施涂在所述孔的侧壁和底壁的至少一部分上。
24.如权利要求14所述的方法，其特征在于，所述基材包括离子注入层，所述施涂步骤包括形成与所述离子注入层相邻的所述组合物层。
25.一种形成微电子结构的方法，所述方法包括以下步骤：
提供具有表面的基材；
将组合物施涂在所述表面上，所述组合物包含含有发色团的化合物和乙烯基醚交联剂，该乙烯基醚交联剂选自三羟甲基丙烷三乙烯基醚、1，4-环己烷二甲醇二乙烯基醚、
或它们的混合物；所述化合物和乙烯基醚交联剂溶解或分散在一种溶剂体系中；所述化合物选自聚合物并包含羧酸基团；
使所述组合物中的化合物交联，形成一层不溶于光刻胶溶剂中的组合物层，并且形成包含具有以下结构式的连接基团的交联化合物
Figure FSB00000804100500042
在所述组合物上施涂光刻胶层；
使所述组合物曝光，以使得交联的化合物解交联。
26.如权利要求25所述的方法，其特征在于，所述聚合物的平均分子量为1,000-100,000道尔顿。
27.如权利要求25所述的方法，其特征在于，所述聚合物的平均分子量为500-3,000道尔顿。
28.如权利要求25所述的方法，其特征在于，所述交联步骤包括使所述化合物热交联。
29.如权利要求25所述的方法，其特征在于，所述曝光步骤制得可溶解在光刻胶显影剂中的组合物层。
30.如权利要求25所述的方法，其特征在于，所述曝光步骤使得以下结构式所示连接基团中的键*断裂
31.如权利要求25所述的方法，其特征在于，所述基材是微电子基材。
32.如权利要求29所述的方法，其特征在于，所述基材选自硅、铝、钨、硅化钨、砷化镓、锗、钽、亚硝酸钽、SiGe、离子注入层或介电层。
33.如权利要求32所述的方法，其特征在于，所述介电层是低k介电层。
34.如权利要求25所述的方法，其特征在于：
所述基材还包括限定孔的结构，所述结构包括侧壁和底壁；
所述施涂步骤包括将所述组合物施涂到所述孔的侧壁和底壁的至少一部分上。
35.如权利要求25所述的方法，其特征在于，所述基材包括离子注入层，所述施涂步骤包括形成与所述离子注入层相邻的所述组合物层。
36.由一种基材、与所述基材相邻的层以及和所述层相邻的光刻胶组合而成的产品，所述与基材相邻的层是由一种组合物形成的，该组合物包括带发色团的化合物和乙烯基醚交联剂，该乙烯基醚交联剂选自三羟甲基丙烷三乙烯基醚、1，4-环己烷二甲醇二乙烯基醚、
或它们的混合物；所述化合物和乙烯基醚交联剂溶解或分散在一种溶剂体系中，所述化合物选自聚合物并包括羧酸基团；所述与基材相邻的层包含具有下式所示连接基团的交联化合物
37.如权利要求36所述的产品，其特征在于，所述聚合物的平均分子量为1,000-100,000道尔顿。
38.如权利要求36所述的产品，其特征在于，所述聚合物的平均分子量为500-3,000道尔顿。
39.如权利要求36所述的产品，其特征在于，所述基材是微电子基材。
40.如权利要求39所述的产品，其特征在于，所述基材选自硅、铝、钨、硅化钨、砷化镓、锗、钽、亚硝酸钽、SiGe、离子注入层或介电层。
41.如权利要求40所述的产品，其特征在于，所述介电层是低k介电层。
42.如权利要求36所述的产品，其特征在于，所述层基本不溶于光刻胶溶剂。
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