CN101842962B - 增加谐振器的q因数 - Google Patents
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Abstract
本发明描述一种无线供电和充电系统。天线可为高q环形天线。所述天线可使用第一部分与第二部分之间的耦合。
Description
本申请案主张2007年8月9日申请的第60/954,941号临时申请案的优先权,所述临时申请案的整个内容以引用的方式并入本文中。
背景技术
在不使用电线来引导电磁场的情况下从源向目的地转移电能是合意的。先前尝试的困难是低效率连同不足量的所递送功率。
发明内容
本申请案教示一种无线电能转移,且教示用于所述能量转移的特定技术,其包含特定天线以及用于所述天线的特定材料。
附图说明
现在将参看附图详细描述这些和其它方面,在附图中:
图1展示基于磁波的无线功率发射系统的框图;
图2说明图1的图中的电路的电路图;
图3说明示范性近场条件曲线;
图4说明在不同天线之间实验性发现的Q因数之间的曲线图;
图5说明大的单匝天线;
图6说明立方体形状的两匝天线;
图7说明非常小的接收器天线;
图8说明一些示范性功率转移操作;以及
图9说明具有包含多个不同支架的电容器固持器的大发射天线。
具体实施方式
本文中描述一般结构和技术,以及可用以实现实行较一般目标的不同方式的较特定实施例。
本申请案描述经由电磁场耦合从功率源向功率目的地的能量转移。实施例描述用于新的耦合结构(例如,发射和接收天线)的技术。
展示实施例,其中主要耦合主要使用磁场组件经由电感性耦合而发生。在例如图1所示的实施例中,能量在发射天线110的区域中形成为静止磁波。所产生的能量至少部分为非辐射性的静止磁场。所产生的场不是完全磁性的,也不是完全静止的,但至少一部分是静止且磁性的。与将持续传播到空间中且使其能量浪费的行进电磁波不同,静止磁波的至少一部分保留在发射天线的区域中,且通过所揭示的技术而使得其可用。
其它实施例可使用所述实施例的类似原理,且同样适用于主要为静电和/或电动的场耦合。大体上,可使用电场代替磁场作为主要的耦合机制。
所述实施例的一个方面是来自增加处于用于所使用的电磁场、电压或电流的正弦波形的自谐振频率的耦合结构(主要是天线)的所谓Q因数的高效率的使用。本发明的发明人已发现,对于使用单个大体上未经调制的正弦波的系统来说,功率的效率和量是优良的。明确地说,性能优于尝试俘获宽带波形中或多个具有不同频率的相异正弦波形中含有的功率的宽带系统。按照所使用材料的现实特性,其它实施例可能使用较不纯净的波形。本文中描述实现具有相对较高Q因数的小谐振天线的技术。
谐振装置的Q是谐振装置的谐振频率与所谓的“三分贝”或“半功率”带宽的比率。虽然存在若干“定义”,但全都在按照谐振电路元件的测量或值来描述Q的方面大体上彼此等效。
图1中展示基本实施例。功率发射器组合件100从源(例如,AC插头102)接收功率。频率产生器104用以产生处于频率(Pt)的信号且将所述频率耦合到天线110(此处为谐振天线)。天线110包含耦合回路111,其以电感性且不接触方式耦合到高Q谐振天线部分112。
谐振天线包含N数目个线圈回路113,每一回路具有半径RA。电容器114(此处展示为可变电容器)与线圈113串联,从而形成谐振回路。在所述实施例中,电容器是与线圈完全分离的结构,但在某些实施例中,形成线圈的电线的自电容可形成电容114。
频率产生器104可优选经调谐到天线110,且还经选择以获得FCC顺应性。
此实施例使用多向天线作为天线部分112。115展示在所有方向上输出的能量。在天线的大部分输出不是电磁辐射能量而是较为静止的磁场的意义上,天线100是非辐射性的。当然,来自天线的部分输出将实际上辐射。
另一实施例可使用辐射性天线。
接收器150包含与发射天线110离开距离d放置但不与其耦合的接收天线155。接收天线类似地为具有线圈部分和电容器151的高Q谐振线圈天线,其耦合到电感性耦合 回路152。电容器151可为可变的以用于调谐。如在发射天线中,耦合回路152与天线的主要部分在物理上分离。耦合回路152的输出在整流器160中整流,且施加于负载。所述负载可为任何类型的负载,例如为例如灯泡等电阻性负载或例如电器、计算机、可再充电电池、音乐播放器或汽车等电子装置负载。
能量可通过电场耦合或磁场耦合而转移,但本文主要描述磁场耦合作为实施例。
电场耦合提供电感性加载的电偶极子,其为开路电容器或介电圆盘。外来物体可能对电场耦合提供相对强的影响。磁场耦合可为优选的,因为其外来物体具有与“空白”空间相同的磁性质。
所述实施例描述使用电容性加载的磁偶极子的磁场耦合。此偶极子由形成线圈的至少一个回路或匝的电线回路与将天线电加载到谐振状态的电容器串联形成。
图2展示能量转移的等效电路。发射电路100是串联谐振电路,其具有在高频率产生器205的频率处谐振的RLC部分。发射器包含串联电阻210和电感性线圈215以及可变电容220。这产生磁场M,其展示为磁力线225。
信号产生器205具有优选通过电感性回路在谐振处匹配于发射谐振器的电阻的内部电阻。这允许从发射器向接收器天线转移最大功率。
接收部分150对应地包含电容器250、变压器线圈255、整流器260以及调节器261以提供经调节的输出电压。输出连接到负载电阻265。图2展示半波整流器,但应了解,可使用较复杂的整流器电路。整流器260和调节器261的阻抗在谐振处匹配于接收谐振器的电阻。这使得能够向负载转移最大量的功率。电阻考虑了集肤效应/邻近效应、辐射电阻以及内部和外部介电损失两者。
理想的谐振发射器将忽略具有不同谐振频率的所有其它附近的谐振物体或与其最少地反应。然而,当具有适当谐振频率的接收器遇到发射天线225的场时,两者耦合以便建立强能量链路。实际上,发射器和接收器操作而变为松散耦合的变压器。
发明人已发现若干改进从发射器向接收器的功率转移的因素。
上文所述的电路的Q因数可辅助某些效率。高Q因数允许谐振频率下的电流值增加。这使得能够维持相对低瓦数的发射。在实施例中,发射器Q可为1400,而接收器Q为300左右。出于本文陈述的原因,在一个实施例中,接收器Q可比发射器Q低得多,例如为发射器Q的1/4到1/5。然而,可使用其它Q因数。
高Q具有窄带宽效应的对应缺点。此窄带宽通常被视为对于数据通信是不合意的。然而,窄带宽可在功率转移中使用。当使用高Q时,发射器信号充分纯净且不含不需要的频率或相位调制,从而允许在此窄带宽上发射其功率的大部分。
举例来说,实施例可使用13.56MHz的谐振频率和9kHz左右的带宽。这较高程度地可用于大体上未经调制的基频。然而,对基频的某种调制可被容许或为可容许的,尤其是在使用其它因素来增加效率的情况下。其它实施例使用较低Q组件,且可允许对基频的对应较多的调制。
重要特征可包含使用通过调节(例如FCC调节)而准许的频率的使用。在此示范性实施例中的优选频率是13.56MHz,但同样可使用其它频率。
另外,电容器应能够承受高电压,例如高达4kV,因为电阻可能相对于电容性电抗来说较小。最终的重要特征是封装:系统应具有小的形状因数。
改进发射天线与接收天线之间的耦合的一个方面是增加天线的Q。功率转移的效率η可表达为
请注意,这随着发射天线的半径的立方、接收天线的半径的立方而增加,且随着距离的六次幂而减小。发射天线和接收天线的半径可受到使用其的应用所约束。因此,在一些应用中增加Q可为增加效率的优选方式。
图4说明在不同天线之间实验性找到的Q因数之间的曲线图。此曲线图展示:对于给定频率,Q因数在谐振器的谐振器线圈具有较少匝时增加。
发明人发现可以单匝回路存在的最优天线,只要形成回路的材料(例如,电线或管材)的损耗电阻维持足够低即可。
图5中说明的实施例使用由相对较厚的导体材料形成的单匝天线500,其由较小的线圈505驱动。天线500与电容性负载(此处为真空电容器502)串联提供。在一实施例中,单匝天线由铜管材形成。真空电容器具有非常高的Q因数,且也可处置非常高的电压。举例来说,可使用大约200pf的真空电容器。此天线可具有低阻抗,进而实现高电流和高磁场。其也可提供低RF电压且因此提供低电杂散场和对来自外部物体的损失的低易感性。
实施例可使用6mm铜管线圈谐振器和9英寸的回路半径。另一实施例可使用30mm铜管。优选地,铜管直径为至少1英寸,其与具有非常高的Q的真空电容器一起使用。真空电容器可具有1000的Q。
关于单匝环形天线的问题在于,其必须具有相对大的直径。
折衷的大小可由两匝天线形成,其在图6中展示。所述两匝天线可具有3.5英寸直径的线圈600。图6说明塑料外壳,其使用直接集成在天线上的真空电容器。发射电感线圈610也安装在外壳上,连接到电缆611。
接收器天线也可为重要的。图7说明示范性接收器天线,其包含安装在衬底705上的多匝材料700。电容器710附接到线圈材料700。
已发现,用作基底的衬底本身在设定Q时可为重要的。表1说明用于不同衬底的一些示范性电性质(包含质量因数)
材料 | 损耗因数(tanδ) | 质量因数(1/tanδ) | 介电常数εr |
FR4 | 0.0222 | 45 | 3.95 |
PVC | 0.0063 | 160 | 1.10 |
Rubalit 710 | 0.0013 | 770 | 1.00 |
PTFE(特氟隆) | 0.0011 | 910 | 1.20 |
此数据仅对处于10到20MHz范围内的频率有效。
表1:不同衬底材料的电性质 |
表1:不同衬底材料的电性质
图7天线为六匝天线,且具有400左右的质量因数。根据一实施例,将高质量因数材料(例如PTFE)用作衬底。另一方面是可在这些天线上使用的限制。表2说明针对应用的可能限制。
针对最大容许暴露(MPE)的FCC限制
(A)针对职业性/受控暴露的限制
(B)针对一般人群/不受控暴露的限制
f=频率(以MHz为单位)*平面波等效功率密度
注释1:对暴露种类的论述见第一部分。
注释2:一般人群/不受控的对固定发射器的暴露的平均时间不适用于移动和便携式发射器。关于针对移动和便携式发射器的基于源的时间平均要求见47CFR§§2.1092和2.1093。
图8中说明一些示范性功率转移操作。接收器天线可为小的或“非常小的”。发射天线可为图5中所示的类型“大”或图6中所示的“立方体”类型。图8说明针对15W发射功率的功率。图8中的水平线800说明正针对15瓦发射接收1/2瓦。高于此量的任何值均可视为可接受的。
图9说明大发射天线,其使用30mm管材900以及集成在天线的若干部分之间的真空电容器905。电容器905安装在焊接或软焊于回路的末端之间的电容器固持器结构910内。电容器固持器包含多个不同的支架950,电容器可位于所述支架内或附接到所述支架。图9中的衬底911可为高q材料,如上文所述。
虽然上文已经详细揭示了仅几个实施例,但其它实施例也是可能的,且发明人希望这些实施例涵盖在此说明书内。说明书描述用以实现可以另一方式实现的较一般目标的具体实例。此揭示内容既定为示范性的,且权利要求书既定涵盖所属领域的技术人员可能可预测到的任何修改或替代方案。举例来说,可使用其它大小、材料和连接。虽然天线的耦合部分被展示为单个电线回路,但应了解,此耦合部分可具有多个电线回路。
而且,发明人希望仅使用词“用于…的装置”的那些权利要求既定根据35USC 112第六节来解释。此外,不希望来自说明书的任何限制对任何权利要求添加另外的意义,除非这些限制明确包含于权利要求中。
在本文提到特定数字值的情况下,应考虑,所述值可增加或减少20%,同时仍保留在本申请案的教示内,除非具体提到某种不同的范围。在使用指定的逻辑意义的情况下,还既定涵盖相反的逻辑意义。
Claims (38)
1.一种用于发射无线电功率的高Q发射器系统,其包括:
源,其经配置以产生具有第一频率的输出电信号;
耦合部分,其以电感性且不接触方式耦合到谐振天线部分,所述耦合部分物理地连接到所述源,所述耦合部分包括第一电线回路;以及
所述天线部分,其与所述耦合部分间隔开以使得其不直接连接到所述耦合部分,但以磁性方式耦合到由所述耦合部分产生的磁场,所述天线部分以无线方式从所述耦合部分接收功率,且所述天线部分基于以无线方式接收的所述功率产生磁场,所述天线部分包括真空电容器,且经配置以在所述第一频率处谐振。
2.根据权利要求1所述的发射器系统,其中所述天线部分具有大于500的质量因数。
3.根据权利要求1所述的发射器系统,其中所述天线部分形成于支撑所述天线部分的衬底上,所述衬底具有处于所述第一频率的等于0.0011的损耗因数。
4.根据权利要求2所述的发射器系统,其中电线线圈包括电感性线圈回路,且其中跨越所述电感性线圈回路的一部分而连接所述真空电容器。
5.根据权利要求4所述的发射器系统,其进一步包括立方体形状的外壳,在所述外壳中容纳了所述电容器。
6.根据权利要求4所述的发射器系统,其中所述天线部分在所述电感性线圈回路中具有单匝。
7.根据权利要求4所述的发射器系统,其中所述天线在所述电感性线圈回路中具有两匝。
8.根据权利要求1所述的发射器系统,其进一步包括用于所述电功率的接收器,其中所述接收器包含调谐到所述第一频率的天线。
9.根据权利要求8所述的发射器系统,其中所述接收器具有低于所述天线部分的质量因数值的质量因数值。
10.根据权利要求9所述的发射器系统,其中所述接收器具有等于或小于所述天线部分的所述质量因数值的1/4的质量因数值。
11.根据权利要求8所述的发射器系统,其中所述接收器天线具有小于所述天线部分的大小的大小。
12.根据权利要求1所述的发射器系统,其中所述电容器具有至少1000的Q。
13.根据权利要求1所述的发射器系统,其中所述第一频率是13.56MHz。
14.根据权利要求3所述的发射器系统,其中所述衬底包含PTFE。
15.根据权利要求3所述的发射器系统,其中所述衬底包含PVC。
16.根据权利要求3所述的发射器系统,其中所述衬底包含Rubalit710。
17.根据权利要求3所述的发射器系统,其中所述衬底包含FR4。
18.一种经由高Q组件以无线方式转移功率的方法,其包括:
使用第一环形天线基于所施加功率产生处于第一频率的实际磁场,所述第一环形天线不包含附接到其的单独电容器,所述第一环形天线以电感性且不接触方式耦合到第二环形天线;以及
将无线功率的一部分耦合于所述第一环形天线与所述第二环形天线之间,其中所述第二环形天线具有与所述第二环形天线在物理上相分离的真空电容器,且其中所述第二环形天线具有处于所述第一频率的谐振值。
19.根据权利要求18所述的方法,其中所述第一和第二环形天线均为发射天线。
20.一种用于发射无线电功率的方法,其包括:
使用具有与第一环形天线物理上相分离的真空电容器的所述第一环形天线、基于所施加的功率、经由处于第一频率的实际磁场而接收能量,所述第一环形天线具有处于所述第一频率的谐振值,且在具有处于所述第一频率的等于0.0011的损耗因数的衬底上形成,所述第一环形天线以电感性且不接触方式耦合到第二环形天线;
在所述第一环形天线与所述第二环形天线之间耦合所接收的能量的一部分,所述第二环形天线不具有附接到其的单独电容器;以及
对来自所述第二环形天线的输出进行整流以产生DC输出。
21.根据权利要求20所述的方法,其中所述第一和第二环形天线均为接收天线。
22.一种用于发射无线电功率的高Q发射器系统,包括:
源,其产生具有第一频率的输出电信号;
耦合部分,其电连接到所述源,且以电感性且不接触方式耦合到谐振天线部分,所述耦合部分由多个电线回路形成;
所述天线部分,其与所述耦合部分间隔开以使得其不直接连接到所述耦合部分,所述天线部分以磁性方式耦合到由所述耦合部分产生的磁场,所述天线部分以无线方式从所述耦合部分接收功率,且所述天线部分基于以无线方式接收的所述功率产生磁场,所述天线部分包括真空电容器,且经配置以在所述第一频率处谐振。
23.根据权利要求22所述的发射器系统,其中所述耦合部分与所述源是阻抗匹配的。
24.根据权利要求22所述的发射器系统,其中所述天线部分具有大于500的质量因数。
25.根据权利要求22所述的发射器系统,其中电线线圈包括其中具有间隙的电感性线圈回路,且跨越所述间隙来连接所述真空电容器。
26.根据权利要求22所述的发射器系统,其中所述天线部分在电线线圈中具有单匝。
27.根据权利要求22所述的发射器系统,其中所述天线部分在电线线圈中具有两匝。
28.根据权利要求22所述的发射器系统,其进一步包括用于所述电功率的接收器,其中所述接收器包含调谐到所述第一频率的天线。
29.根据权利要求28所述的发射器系统,其中所述接收器天线具有低于所述天线部分的质量因数值的质量因数值。
30.根据权利要求29所述的发射器系统,其中所述接收器天线具有等于或小于所述天线部分的所述质量因数值的1/4的质量因数值。
31.根据权利要求28所述的发射器系统,其中所述接收器天线具有小于所述天线部分的大小的大小。
32.一种经由高Q组件以无线方式转移功率的方法,包括:
使用由多个电线回路形成的且不具有附接到其的单独电容器的第一环形天线、基于所施加功率而产生处于第一频率的磁场,所述第一环形天线以电感性且不接触方式耦合到第二环形天线;以及
将无线功率的一部分耦合于所述第一环形天线与所述第二环形天线之间,所述第一环形天线和所述第二环形天线彼此相关联,其中所述第二环形天线具有与所述第二环形天线相分离的真空电容器,且其中所述第二环形天线具有处于所述第一频率的谐振值。
33.一种高Q无线电功率系统,包括:
发射器,包括:
源,其产生具有第一频率的输出电信号;
耦合部分,其直接连接到所述源,且以电感性且不接触方式耦合到谐振天线部分,所述耦合部分由与所述源阻抗匹配的第一电线回路形成;以及
所述天线部分,其与所述耦合部分间隔开以使得其不直接连接到所述耦合部分,但以磁性方式耦合到由所述耦合部分产生的磁场,所述天线部分以无线方式从所述耦合部分接收功率,且所述天线部分基于以无线方式接收的所述功率产生磁场,所述天线部分包括真空电容器,且经配置以在所述第一频率处谐振;
用于所述电功率的接收器,其中所述接收器包含调谐到所述第一频率的天线,所述接收器天线形成在衬底上,以支撑所述接收器天线,所述衬底具有处于所述第一频率的等于0.0011的损耗因数;
其中,所述接收器具有低于所述发射器的质量因数值的质量因数值。
34.根据权利要求33所述的系统,其中所述第一电线回路包括多匝。
35.根据权利要求33所述的系统,其中电线线圈具有单匝。
36.根据权利要求33所述的系统,其中电线线圈具有两匝。
37.根据权利要求33所述的系统,其中所述接收器具有等于或小于所述发射器的所述质量因数的1/4的质量因数。
38.根据权利要求33所述的系统,其中所述接收器天线具有小于所述天线部分的大小的大小。
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WO2009023155A3 (en) | 2009-05-28 |
US20120001492A9 (en) | 2012-01-05 |
CN101842962A (zh) | 2010-09-22 |
CN103187629B (zh) | 2016-08-24 |
WO2009023155A2 (en) | 2009-02-19 |
US8482157B2 (en) | 2013-07-09 |
KR20130036071A (ko) | 2013-04-09 |
JP5697979B2 (ja) | 2015-04-08 |
JP2014096981A (ja) | 2014-05-22 |
KR20100057632A (ko) | 2010-05-31 |
US20090051224A1 (en) | 2009-02-26 |
JP2010536315A (ja) | 2010-11-25 |
EP2176939A4 (en) | 2012-03-14 |
CN103187629A (zh) | 2013-07-03 |
EP2176939A2 (en) | 2010-04-21 |
EP2176939B1 (en) | 2017-09-13 |
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