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DE60217943D1 - Nitrid-Halbleitervorrichtung und Verfahren zu deren Herstellung - Google Patents

Nitrid-Halbleitervorrichtung und Verfahren zu deren Herstellung

Info

Publication number
DE60217943D1
DE60217943D1 DE60217943T DE60217943T DE60217943D1 DE 60217943 D1 DE60217943 D1 DE 60217943D1 DE 60217943 T DE60217943 T DE 60217943T DE 60217943 T DE60217943 T DE 60217943T DE 60217943 D1 DE60217943 D1 DE 60217943D1
Authority
DE
Germany
Prior art keywords
making
same
semiconductor device
nitride semiconductor
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60217943T
Other languages
English (en)
Other versions
DE60217943T2 (de
Inventor
Hiroyuki Ota
Masayuki Sonobe
Norikazu Ito
Tetsuo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Pioneer Corp
Original Assignee
Rohm Co Ltd
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd, Pioneer Corp filed Critical Rohm Co Ltd
Application granted granted Critical
Publication of DE60217943D1 publication Critical patent/DE60217943D1/de
Publication of DE60217943T2 publication Critical patent/DE60217943T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
DE60217943T 2001-06-12 2002-06-06 Nitrid-Halbleitervorrichtung und Verfahren zu deren Herstellung Expired - Lifetime DE60217943T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001177383A JP3909811B2 (ja) 2001-06-12 2001-06-12 窒化物半導体素子及びその製造方法
JP2001177383 2001-06-12

Publications (2)

Publication Number Publication Date
DE60217943D1 true DE60217943D1 (de) 2007-03-22
DE60217943T2 DE60217943T2 (de) 2007-10-18

Family

ID=19018234

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60217943T Expired - Lifetime DE60217943T2 (de) 2001-06-12 2002-06-06 Nitrid-Halbleitervorrichtung und Verfahren zu deren Herstellung

Country Status (7)

Country Link
US (1) US6693303B2 (de)
EP (1) EP1267422B1 (de)
JP (1) JP3909811B2 (de)
KR (1) KR100448662B1 (de)
CN (1) CN1249820C (de)
DE (1) DE60217943T2 (de)
TW (1) TW569470B (de)

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JP5305588B2 (ja) * 2006-01-12 2013-10-02 三菱化学株式会社 ＧａＮ系発光素子およびその製造方法
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US20090078309A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
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JP4962130B2 (ja) * 2007-04-04 2012-06-27 三菱化学株式会社 ＧａＮ系半導体発光ダイオードの製造方法
KR101164026B1 (ko) * 2007-07-12 2012-07-18 삼성전자주식회사 질화물계 반도체 발광소자 및 그 제조방법
US8895342B2 (en) 2007-09-24 2014-11-25 Emcore Solar Power, Inc. Heterojunction subcells in inverted metamorphic multijunction solar cells
US10381505B2 (en) 2007-09-24 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells including metamorphic layers
US20090078311A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
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JP5306904B2 (ja) * 2009-05-28 2013-10-02 シャープ株式会社 窒化物半導体発光ダイオード素子およびその製造方法
TWI478381B (zh) * 2009-06-08 2015-03-21 Epistar Corp 發光元件及其製造方法
US8525221B2 (en) * 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
DE102009060750B4 (de) 2009-12-30 2025-04-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US8421057B2 (en) * 2010-06-25 2013-04-16 Invenlux Corporation Light-emitting devices with improved active-region
US8476652B2 (en) 2010-07-30 2013-07-02 Invenlux Corporation Three-dimensional light-emitting devices and method for fabricating the same
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US20120119254A1 (en) * 2011-07-08 2012-05-17 Yong Tae Moon Light emitting device, light emitting device package and lighting system including the same
JP6005346B2 (ja) * 2011-08-12 2016-10-12 シャープ株式会社 窒化物半導体発光素子およびその製造方法
KR101827973B1 (ko) * 2011-09-06 2018-02-13 엘지이노텍 주식회사 발광소자
JP5162016B1 (ja) * 2011-09-15 2013-03-13 株式会社東芝 半導体素子、ウェーハ、半導体素子の製造方法及びウェーハの製造方法
US8698163B2 (en) * 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
KR101838019B1 (ko) * 2011-10-10 2018-03-13 엘지이노텍 주식회사 발광 소자 및 그 제조 방법
US9184344B2 (en) 2012-01-25 2015-11-10 Invenlux Limited Lighting-emitting device with nanostructured layer and method for fabricating the same
KR101881064B1 (ko) 2012-03-05 2018-07-24 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법
KR102050052B1 (ko) * 2012-11-02 2019-11-28 엘지이노텍 주식회사 발광소자
US9890353B2 (en) 2013-03-15 2018-02-13 Janssen Biotech, Inc. Media suction devices and methods
DE102013103601A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
DE102014115599A1 (de) * 2013-10-28 2015-04-30 Seoul Viosys Co., Ltd. Halbleitervorrichtung und Verfahren zu deren Herstellung
JP2015177025A (ja) * 2014-03-14 2015-10-05 株式会社東芝 光半導体素子
CN106415860B (zh) * 2014-06-03 2020-02-14 夏普株式会社 氮化物半导体发光元件
JP2016063176A (ja) 2014-09-22 2016-04-25 スタンレー電気株式会社 半導体発光素子
CN107924966B (zh) * 2014-09-22 2020-12-22 夏普株式会社 氮化物半导体发光元件
CN104733579B (zh) * 2015-01-20 2018-05-08 扬州德豪润达光电有限公司 半导体发光器件及其制备方法
JP6380172B2 (ja) 2015-03-06 2018-08-29 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子とその製造方法
DE102015104665A1 (de) * 2015-03-26 2016-09-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
CN104894532B (zh) * 2015-04-23 2018-07-10 安徽三安光电有限公司 一种改善漏电流的发光二极管制备方法
KR102320476B1 (ko) * 2015-05-08 2021-11-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이의 제조 방법
DE102015116712B4 (de) * 2015-10-01 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
KR102569461B1 (ko) * 2015-11-30 2023-09-04 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 조명장치
CN105405939B (zh) * 2015-12-02 2018-01-12 华灿光电(苏州）有限公司 一种发光二极管及其制造方法
DE102016103346A1 (de) 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips und strahlungsemittierender Halbleiterchip
JP6188866B2 (ja) * 2016-05-19 2017-08-30 シャープ株式会社 窒化物半導体発光素子の製造方法
DE102016208717B4 (de) * 2016-05-20 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit erhöhter Effizienz und Verfahren zur Herstellung eines Bauelements
CN108807613A (zh) * 2018-06-27 2018-11-13 聚灿光电科技股份有限公司 Led外延结构及其制备方法
DE102019131422A1 (de) * 2019-11-21 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
CN112786743B (zh) * 2021-01-26 2022-04-01 中国科学院半导体研究所 基于v坑调控的橙黄光led器件及其制备方法
JP7419652B2 (ja) * 2021-11-22 2024-01-23 日亜化学工業株式会社 発光素子

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JP3787195B2 (ja) * 1996-09-06 2006-06-21 シャープ株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
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JP3583375B2 (ja) * 2001-03-02 2004-11-04 三菱電線工業株式会社 ＧａＮ系半導体基材およびその製造方法

Also Published As

Publication number Publication date
JP3909811B2 (ja) 2007-04-25
EP1267422A3 (de) 2005-08-03
EP1267422A2 (de) 2002-12-18
EP1267422B1 (de) 2007-01-31
TW569470B (en) 2004-01-01
CN1249820C (zh) 2006-04-05
JP2002368269A (ja) 2002-12-20
US20030001161A1 (en) 2003-01-02
KR20030006990A (ko) 2003-01-23
KR100448662B1 (ko) 2004-09-13
DE60217943T2 (de) 2007-10-18
CN1391293A (zh) 2003-01-15
US6693303B2 (en) 2004-02-17

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