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DE10216633B8 - Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung - Google Patents

Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung Download PDF

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Publication number
DE10216633B8
DE10216633B8 DE10216633A DE10216633A DE10216633B8 DE 10216633 B8 DE10216633 B8 DE 10216633B8 DE 10216633 A DE10216633 A DE 10216633A DE 10216633 A DE10216633 A DE 10216633A DE 10216633 B8 DE10216633 B8 DE 10216633B8
Authority
DE
Germany
Prior art keywords
semiconductor device
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10216633A
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English (en)
Other versions
DE10216633B4 (de
DE10216633A1 (de
Inventor
Jun Sakakibara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE10216633A1 publication Critical patent/DE10216633A1/de
Publication of DE10216633B4 publication Critical patent/DE10216633B4/de
Application granted granted Critical
Publication of DE10216633B8 publication Critical patent/DE10216633B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/664—Inverted VDMOS transistors, i.e. source-down VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
DE10216633A 2001-04-18 2002-04-15 Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung Expired - Fee Related DE10216633B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01-120163 2001-04-18
JP2001120163A JP3534084B2 (ja) 2001-04-18 2001-04-18 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
DE10216633A1 DE10216633A1 (de) 2002-10-24
DE10216633B4 DE10216633B4 (de) 2011-06-22
DE10216633B8 true DE10216633B8 (de) 2012-02-02

Family

ID=18970255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10216633A Expired - Fee Related DE10216633B8 (de) 2001-04-18 2002-04-15 Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung

Country Status (3)

Country Link
US (2) US6670673B2 (de)
JP (1) JP3534084B2 (de)
DE (1) DE10216633B8 (de)

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JP2004047967A (ja) * 2002-05-22 2004-02-12 Denso Corp 半導体装置及びその製造方法
US6790713B1 (en) * 2002-09-09 2004-09-14 T-Ram, Inc. Method for making an inlayed thyristor-based device
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7259411B1 (en) * 2003-12-04 2007-08-21 National Semiconductor Corporation Vertical MOS transistor
US7348641B2 (en) * 2004-08-31 2008-03-25 International Business Machines Corporation Structure and method of making double-gated self-aligned finFET having gates of different lengths
DE102004045966B4 (de) * 2004-09-22 2006-08-31 Infineon Technologies Austria Ag Vertikal-Feldeffekttransistor in Source-Down-Struktur
DE102004052153B4 (de) * 2004-10-26 2016-02-04 Infineon Technologies Ag Vertikales Leistungshalbleiterbauelement mit Gateanschluss auf der Rückseite und Verfahren zu dessen Herstellung
US9685524B2 (en) 2005-03-11 2017-06-20 Vishay-Siliconix Narrow semiconductor trench structure
JP4830360B2 (ja) * 2005-06-17 2011-12-07 株式会社デンソー 半導体装置およびその製造方法
TWI489557B (zh) 2005-12-22 2015-06-21 Vishay Siliconix 高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體
US8409954B2 (en) * 2006-03-21 2013-04-02 Vishay-Silconix Ultra-low drain-source resistance power MOSFET
WO2008114167A2 (en) * 2007-03-19 2008-09-25 Nxp B.V. Extended drain transistor with resecced gate and method of producing the same
JP2009081397A (ja) * 2007-09-27 2009-04-16 Fuji Electric Device Technology Co Ltd 半導体装置および半導体装置の製造方法
JP5563760B2 (ja) * 2008-12-19 2014-07-30 ローム株式会社 半導体装置
US8004051B2 (en) 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate
CN101840935B (zh) * 2010-05-17 2012-02-29 电子科技大学 Soi横向mosfet器件
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
JP2012043955A (ja) * 2010-08-18 2012-03-01 Toshiba Corp 半導体装置及びその製造方法
JP2012059931A (ja) * 2010-09-09 2012-03-22 Toshiba Corp 半導体装置
US20120068222A1 (en) * 2010-09-21 2012-03-22 Kabushiki Kaisha Toshiba Semiconductor Device and Method for Manufacturing the Same
US8580650B2 (en) * 2010-10-28 2013-11-12 Texas Instruments Incorporated Lateral superjunction extended drain MOS transistor
US8569842B2 (en) 2011-01-07 2013-10-29 Infineon Technologies Austria Ag Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
US8455948B2 (en) 2011-01-07 2013-06-04 Infineon Technologies Austria Ag Transistor arrangement with a first transistor and with a plurality of second transistors
JP2012204563A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体素子及び半導体素子の製造方法
US9412883B2 (en) 2011-11-22 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for MOS capacitors in replacement gate process
US8866253B2 (en) 2012-01-31 2014-10-21 Infineon Technologies Dresden Gmbh Semiconductor arrangement with active drift zone
US9799762B2 (en) * 2012-12-03 2017-10-24 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device
US9735243B2 (en) 2013-11-18 2017-08-15 Infineon Technologies Ag Semiconductor device, integrated circuit and method of forming a semiconductor device
KR101766561B1 (ko) * 2012-12-03 2017-08-08 인피니언 테크놀로지스 아게 반도체 디바이스, 집적 회로 및 반도체 디바이스 제조 방법
US9306058B2 (en) 2013-10-02 2016-04-05 Infineon Technologies Ag Integrated circuit and method of manufacturing an integrated circuit
US9287404B2 (en) 2013-10-02 2016-03-15 Infineon Technologies Austria Ag Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates
US9401399B2 (en) 2013-10-15 2016-07-26 Infineon Technologies Ag Semiconductor device
US9419130B2 (en) 2013-11-27 2016-08-16 Infineon Technologies Austria Ag Semiconductor device and integrated circuit
US9449968B2 (en) * 2013-12-27 2016-09-20 Infineon Technologies Austria Ag Method for manufacturing a semiconductor device and a semiconductor device
US9400513B2 (en) 2014-06-30 2016-07-26 Infineon Technologies Austria Ag Cascode circuit
DE102016107714B4 (de) * 2015-08-14 2019-07-18 Infineon Technologies Dresden Gmbh Halbleitervorrichtung mit einer Transistorzelle, die einen Sourcekontakt in einem Graben umfasst, Verfahren zum Herstellen der Halbleitervorrichtung und integrierte Schaltung
DE102016110645B4 (de) * 2016-06-09 2024-10-17 Infineon Technologies Ag Halbleitervorrichtung mit einem eine erste feldplatte und eine zweite feldplatte aufweisenden transistor
DE102018106689B4 (de) 2018-03-21 2020-10-15 Infineon Technologies Ag Siliziumcarbid-Halbleitervorrichtung mit einer Graben-Gatestruktur und horizontal angeordneten Kanal- und Stromausbreitungsgebieten
US12068411B2 (en) * 2018-03-26 2024-08-20 Nissan Motor Co., Ltd. Semiconductor device and method for manufacturing same

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US4796070A (en) * 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
US4910564A (en) * 1987-07-01 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Highly integrated field effect transistor and method for manufacturing the same
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
US6118149A (en) * 1997-03-17 2000-09-12 Kabushiki Kaisha Toshiba Trench gate MOSFET

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JPS61125174A (ja) 1984-11-22 1986-06-12 Agency Of Ind Science & Technol 半導体装置
JPS6366963A (ja) 1986-09-08 1988-03-25 Nippon Telegr & Teleph Corp <Ntt> 溝埋込型半導体装置およびその製造方法
JP2510599B2 (ja) 1987-07-01 1996-06-26 三菱電機株式会社 電界効果トランジスタ
JPH03283669A (ja) 1990-03-30 1991-12-13 Nec Corp 電界効果トランジスタ
JP2894820B2 (ja) 1990-10-25 1999-05-24 株式会社東芝 半導体装置
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
JPH0582782A (ja) 1991-09-20 1993-04-02 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓｆｅｔ
US5640034A (en) * 1992-05-18 1997-06-17 Texas Instruments Incorporated Top-drain trench based resurf DMOS transistor structure
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
JP3329973B2 (ja) 1995-01-26 2002-09-30 松下電工株式会社 半導体装置およびその製造方法
JP3395559B2 (ja) 1997-01-28 2003-04-14 株式会社豊田中央研究所 半導体装置
US6281547B1 (en) 1997-05-08 2001-08-28 Megamos Corporation Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask
JP3405681B2 (ja) 1997-07-31 2003-05-12 株式会社東芝 半導体装置
JPH11150265A (ja) 1997-11-17 1999-06-02 Toshiba Corp 半導体装置
JP3356162B2 (ja) * 1999-10-19 2002-12-09 株式会社デンソー 半導体装置及びその製造方法

Patent Citations (4)

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US4796070A (en) * 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
US4910564A (en) * 1987-07-01 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Highly integrated field effect transistor and method for manufacturing the same
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
US6118149A (en) * 1997-03-17 2000-09-12 Kabushiki Kaisha Toshiba Trench gate MOSFET

Also Published As

Publication number Publication date
US6867456B2 (en) 2005-03-15
DE10216633B4 (de) 2011-06-22
US20020155685A1 (en) 2002-10-24
JP3534084B2 (ja) 2004-06-07
DE10216633A1 (de) 2002-10-24
US20040089896A1 (en) 2004-05-13
US6670673B2 (en) 2003-12-30
JP2002314080A (ja) 2002-10-25

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8110 Request for examination paragraph 44
R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20110923

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20131101