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CN203553169U - 薄膜晶体管阵列基板和包括该基板的显示设备 - Google Patents

薄膜晶体管阵列基板和包括该基板的显示设备 Download PDF

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Publication number
CN203553169U
CN203553169U CN201320347984.1U CN201320347984U CN203553169U CN 203553169 U CN203553169 U CN 203553169U CN 201320347984 U CN201320347984 U CN 201320347984U CN 203553169 U CN203553169 U CN 203553169U
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China
Prior art keywords
conductive layer
contact hole
layer
electrode
display device
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Expired - Lifetime
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CN201320347984.1U
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English (en)
Chinese (zh)
Inventor
李元世
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CN201320347984.1U 2012-08-24 2013-06-18 薄膜晶体管阵列基板和包括该基板的显示设备 Expired - Lifetime CN203553169U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0093295 2012-08-24
KR20120093295A KR101434366B1 (ko) 2012-08-24 2012-08-24 박막 트랜지스터 어레이 기판, 이를 포함하는 표시 장치

Publications (1)

Publication Number Publication Date
CN203553169U true CN203553169U (zh) 2014-04-16

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CN201320347984.1U Expired - Lifetime CN203553169U (zh) 2012-08-24 2013-06-18 薄膜晶体管阵列基板和包括该基板的显示设备
CN201310241332.4A Active CN103633146B (zh) 2012-08-24 2013-06-18 薄膜晶体管阵列基板和包括该基板的显示设备
CN201810360491.9A Active CN108538857B (zh) 2012-08-24 2013-06-18 薄膜晶体管阵列基板和包括该基板的显示设备

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CN201310241332.4A Active CN103633146B (zh) 2012-08-24 2013-06-18 薄膜晶体管阵列基板和包括该基板的显示设备
CN201810360491.9A Active CN108538857B (zh) 2012-08-24 2013-06-18 薄膜晶体管阵列基板和包括该基板的显示设备

Country Status (6)

Country Link
US (4) US9136316B2 (ja)
EP (2) EP4307377A3 (ja)
JP (2) JP6309723B2 (ja)
KR (1) KR101434366B1 (ja)
CN (3) CN203553169U (ja)
TW (1) TWI625852B (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103633146A (zh) * 2012-08-24 2014-03-12 三星显示有限公司 薄膜晶体管阵列基板和包括该基板的显示设备
CN106098728A (zh) * 2015-04-30 2016-11-09 三星显示有限公司 有机发光二极管显示器及其修复方法
CN107452757A (zh) * 2017-07-31 2017-12-08 上海天马微电子有限公司 一种显示面板、其制作方法及显示装置

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KR20140029992A (ko) * 2012-08-31 2014-03-11 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 표시 장치
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KR102034254B1 (ko) * 2013-04-04 2019-10-21 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
US10115739B2 (en) 2014-05-07 2018-10-30 Sony Corporation Display unit and electronic apparatus
KR102322014B1 (ko) 2014-10-24 2021-11-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
KR102354377B1 (ko) * 2014-11-24 2022-01-21 삼성디스플레이 주식회사 유기 발광 표시 장치
CN104599959A (zh) * 2014-12-24 2015-05-06 深圳市华星光电技术有限公司 低温多晶硅tft基板的制作方法及其结构
CN106157882B (zh) * 2015-04-24 2019-01-15 上海和辉光电有限公司 像素结构
KR102556027B1 (ko) * 2015-09-10 2023-07-17 삼성디스플레이 주식회사 디스플레이장치 및 이의 제조방법
TWI569426B (zh) * 2015-12-24 2017-02-01 財團法人工業技術研究院 畫素陣列結構、顯示面板以及畫素陣列結構的製作方法
KR102606279B1 (ko) * 2016-04-04 2023-11-27 삼성디스플레이 주식회사 디스플레이 장치
KR102716398B1 (ko) * 2016-06-17 2024-10-11 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102660292B1 (ko) * 2016-06-23 2024-04-24 삼성디스플레이 주식회사 박막 트랜지스터 패널 및 그 제조 방법
TWI726006B (zh) * 2016-07-15 2021-05-01 日商半導體能源研究所股份有限公司 顯示裝置、輸入輸出裝置、資料處理裝置
KR102391474B1 (ko) * 2017-05-30 2022-04-28 삼성디스플레이 주식회사 표시 장치
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CN108461529A (zh) * 2018-03-29 2018-08-28 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
CN209912874U (zh) * 2019-08-05 2020-01-07 北京京东方技术开发有限公司 显示基板、显示装置
CN210110300U (zh) * 2019-08-16 2020-02-21 北京京东方技术开发有限公司 像素驱动电路、阵列基板和显示装置
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CN114250498B (zh) * 2020-09-25 2023-09-01 京东方科技集团股份有限公司 用于3d打印的阳极背板
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103633146A (zh) * 2012-08-24 2014-03-12 三星显示有限公司 薄膜晶体管阵列基板和包括该基板的显示设备
CN106098728A (zh) * 2015-04-30 2016-11-09 三星显示有限公司 有机发光二极管显示器及其修复方法
CN106098728B (zh) * 2015-04-30 2022-03-25 三星显示有限公司 有机发光二极管显示器及其修复方法
CN107452757A (zh) * 2017-07-31 2017-12-08 上海天马微电子有限公司 一种显示面板、其制作方法及显示装置
CN107452757B (zh) * 2017-07-31 2019-10-22 上海天马微电子有限公司 一种显示面板、其制作方法及显示装置

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CN108538857A (zh) 2018-09-14
KR101434366B1 (ko) 2014-08-26
TW201409682A (zh) 2014-03-01
US20150364505A1 (en) 2015-12-17
CN103633146B (zh) 2018-05-18
JP6608475B2 (ja) 2019-11-20
US9941307B2 (en) 2018-04-10
JP6309723B2 (ja) 2018-04-11
JP2018109787A (ja) 2018-07-12
CN103633146A (zh) 2014-03-12
US20220181360A1 (en) 2022-06-09
JP2014044421A (ja) 2014-03-13
US11264412B2 (en) 2022-03-01
EP2701195B1 (en) 2023-11-29
CN108538857B (zh) 2023-07-28
EP2701195A1 (en) 2014-02-26
US20180226436A1 (en) 2018-08-09
KR20140026196A (ko) 2014-03-05
US20140054562A1 (en) 2014-02-27
EP4307377A2 (en) 2024-01-17
US9136316B2 (en) 2015-09-15
TWI625852B (zh) 2018-06-01
EP4307377A3 (en) 2024-04-03

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