KR960042178A - 표시 장치 - Google Patents
표시 장치 Download PDFInfo
- Publication number
- KR960042178A KR960042178A KR1019960014941A KR19960014941A KR960042178A KR 960042178 A KR960042178 A KR 960042178A KR 1019960014941 A KR1019960014941 A KR 1019960014941A KR 19960014941 A KR19960014941 A KR 19960014941A KR 960042178 A KR960042178 A KR 960042178A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- light shielding
- pixel electrode
- shielding electrode
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 239000003990 capacitor Substances 0.000 claims abstract 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 3
- 239000002184 metal Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
- 기판과, 화소 영역들의 매트릭스를 정의하기 위해서 매트릭스의 형태로 배열된 복수개의 소스선 및 복수개의 게이트선과, 상기 화소 영역들의 각각에 배치된 적어도 하나의 화소 전극 및, 상기 소스선과 게이트선을 피복하도록 배치된 광 차폐 전극을 구비하고, 상기 화소 전극들의 각각은 상기 소스선들의 두개의 인접 소스선과 상기 게이트선들의 두개의 인접 게이트선에 의해서 경계지어지며, 상기 화소 전극의 주변은 상기 화소 전극의 상기 주변과 상기 광 차폐 전극 사이에 보조 캐패시터를 형성하도록 상기 광 차폐 전극과 중첩하는 것을 특징으로 하는 표시 장치.
- 제1항에 있어서, 상기 화소 전극과 상기 광 차폐 전극은 상기 동일의 기판 위에 형성되는 것을 특징으로 하는 표시 장치.
- 매트릭스의 형태로 배열되는 소스선 및 게이트선들과, 상기 소스선들과 상기 게이트선들에 의해서 둘러싸인 각 영역에 배치된 적어도 하나의 화소 전극 및, 상기 화소 전극의 주변과 중첩하도록 배치된 광 차폐 전극을 구비하고, 상기 화소 전극과 상기 광 차폐 전극은 절연막을 통해서 캐패시터를 구성하고, 상기 광 차폐 전극은 상기 소스선과 상기 게이트선과는 다른 층에 존재하는 것을 특징으로 하는 표시 장치.
- 제3항에 있어서, 상기 화소 전극과 상기 광 차폐 전극은 상기 동일의 기판 위에 형성되는 것을 특징으로 하는 표시 장치.
- 입사광의 한 측면으로부터 기록되는 순서대로, 화소 전극과, 광 차폐 전극과, 소스선 및, 게이트선을 구비하고, 상기 화소 전극과 상기 광 차폐 전극은 그들 사이에 캐패시터를 구성하는 것을 특징으로 하는 표시장치.
- 제5항에 있어서, 상기 광 차폐 전극은 상기 화소 전극의 주변과 중첩하도록 배치되는 것을 특징으로 하는 표시 장치.
- 제5항에 있어서, 상기 광 차폐 전극은 상기 소스선과 상기 게이트선을 상기 입사광으로부터 차폐하는 것을 특징으로 하는 표시 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13481095 | 1995-05-08 | ||
JP95-134810 | 1995-05-08 | ||
JP96-58500 | 1996-02-21 | ||
JP5850096A JPH0926603A (ja) | 1995-05-08 | 1996-02-21 | 表示装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990006628A Division KR100351398B1 (ko) | 1995-05-08 | 1999-02-27 | 표시 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960042178A true KR960042178A (ko) | 1996-12-21 |
KR100333156B1 KR100333156B1 (ko) | 2003-06-09 |
Family
ID=26399552
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960014941A Expired - Lifetime KR100333156B1 (ko) | 1995-05-08 | 1996-05-08 | 표시장치 |
KR1019990006628A Expired - Lifetime KR100351398B1 (ko) | 1995-05-08 | 1999-02-27 | 표시 장치 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990006628A Expired - Lifetime KR100351398B1 (ko) | 1995-05-08 | 1999-02-27 | 표시 장치 |
Country Status (3)
Country | Link |
---|---|
US (5) | US5777701A (ko) |
JP (1) | JPH0926603A (ko) |
KR (2) | KR100333156B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050054264A (ko) * | 2003-12-04 | 2005-06-10 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
Families Citing this family (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0926603A (ja) * | 1995-05-08 | 1997-01-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JPH09105953A (ja) * | 1995-10-12 | 1997-04-22 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
US6900855B1 (en) * | 1995-10-12 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device having resin black matrix over counter substrate |
JP3597305B2 (ja) * | 1996-03-05 | 2004-12-08 | 株式会社半導体エネルギー研究所 | 液晶表示装置およびその作製方法 |
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JP3856889B2 (ja) * | 1997-02-06 | 2006-12-13 | 株式会社半導体エネルギー研究所 | 反射型表示装置および電子デバイス |
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JP3784491B2 (ja) * | 1997-03-28 | 2006-06-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
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JP4027465B2 (ja) | 1997-07-01 | 2007-12-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその製造方法 |
WO1999005565A1 (fr) * | 1997-07-23 | 1999-02-04 | Seiko Epson Corporation | Affichage a cristaux liquides, procede de fabrication d'un tel affichage, et materiel electronique |
JPH11143379A (ja) | 1997-09-03 | 1999-05-28 | Semiconductor Energy Lab Co Ltd | 半導体表示装置補正システムおよび半導体表示装置の補正方法 |
KR100508057B1 (ko) * | 1997-11-19 | 2005-12-01 | 삼성전자주식회사 | 박막트랜지스터기판및박막트랜지스터액정표시장치제조방법 |
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US6654090B1 (en) | 1998-09-18 | 2003-11-25 | Lg. Philips Lcd Co., Ltd. | Multi-domain liquid crystal display device and method of manufacturing thereof |
KR100313949B1 (ko) | 1998-11-11 | 2002-09-17 | 엘지.필립스 엘시디 주식회사 | 멀티도메인액정표시소자 |
US6525794B1 (en) | 1998-10-19 | 2003-02-25 | Lg. Philips Lcd Co., Ltd. | Multi-domain liquid crystal display device having a dielectric frame controlling alignment of the liquid crystal molecules |
US6900869B1 (en) | 1998-11-25 | 2005-05-31 | Lg. Philips Lcd Co., Ltd. | Multi-domain liquid crystal display device with particular dielectric structures |
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KR100301855B1 (ko) * | 1998-12-11 | 2001-09-26 | 구본준, 론 위라하디락사 | 멀티도메인 액정표시소자 |
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KR100339332B1 (ko) | 1999-02-08 | 2002-06-03 | 구본준, 론 위라하디락사 | 멀티도메인 액정표시소자 |
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-
1996
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- 1996-05-08 KR KR1019960014941A patent/KR100333156B1/ko not_active Expired - Lifetime
-
1998
- 1998-04-20 US US09/062,874 patent/US6219118B1/en not_active Expired - Lifetime
-
1999
- 1999-02-27 KR KR1019990006628A patent/KR100351398B1/ko not_active Expired - Lifetime
-
2001
- 2001-03-23 US US09/816,492 patent/US7190420B2/en not_active Expired - Fee Related
-
2004
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2007
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Also Published As
Publication number | Publication date |
---|---|
US5777701A (en) | 1998-07-07 |
KR100333156B1 (ko) | 2003-06-09 |
US7683978B2 (en) | 2010-03-23 |
US20070153169A1 (en) | 2007-07-05 |
KR100351398B1 (ko) | 2002-09-09 |
US20010035919A1 (en) | 2001-11-01 |
US20050099557A1 (en) | 2005-05-12 |
JPH0926603A (ja) | 1997-01-28 |
US6219118B1 (en) | 2001-04-17 |
US7110059B2 (en) | 2006-09-19 |
US7190420B2 (en) | 2007-03-13 |
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