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KR900007100A - 반도체장치 - Google Patents

반도체장치

Info

Publication number
KR900007100A
KR900007100A KR1019890015486A KR890015486A KR900007100A KR 900007100 A KR900007100 A KR 900007100A KR 1019890015486 A KR1019890015486 A KR 1019890015486A KR 890015486 A KR890015486 A KR 890015486A KR 900007100 A KR900007100 A KR 900007100A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
KR1019890015486A
Other languages
English (en)
Other versions
KR920010845B1 (ko
Inventor
미츠루 시미즈
쇼조 사이토
요시오 오카다
슈조 후지이
Original Assignee
가부시키가이샤 도시바
도시바 마이크로 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 가부시키가이샤 도시바
Publication of KR900007100A publication Critical patent/KR900007100A/ko
Application granted granted Critical
Publication of KR920010845B1 publication Critical patent/KR920010845B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
KR1019890015486A 1988-10-28 1989-10-26 반도체장치 KR920010845B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63272586A JPH02119262A (ja) 1988-10-28 1988-10-28 半導体装置
JP63-272586 1988-10-28

Publications (2)

Publication Number Publication Date
KR900007100A true KR900007100A (ko) 1990-05-09
KR920010845B1 KR920010845B1 (ko) 1992-12-19

Family

ID=17515984

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890015486A KR920010845B1 (ko) 1988-10-28 1989-10-26 반도체장치

Country Status (3)

Country Link
US (1) US4994874A (ko)
JP (1) JPH02119262A (ko)
KR (1) KR920010845B1 (ko)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2644342B2 (ja) * 1989-09-01 1997-08-25 東芝マイクロエレクトロニクス株式会社 入力保護回路を備えた半導体装置
DE3930697A1 (de) * 1989-09-14 1991-03-28 Bosch Gmbh Robert Steuerbare temperaturkompensierte spannungsbegrenzungseinrichtung
KR960002094B1 (ko) * 1990-11-30 1996-02-10 가부시키가이샤 도시바 입력보호회로를 갖춘 반도체장치
JP3033793B2 (ja) * 1990-11-30 2000-04-17 株式会社東芝 半導体装置
US5304839A (en) * 1990-12-04 1994-04-19 At&T Bell Laboratories Bipolar ESD protection for integrated circuits
US5514893A (en) * 1992-01-05 1996-05-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device for protecting an internal circuit from electrostatic damage
US5293057A (en) * 1992-08-14 1994-03-08 Micron Technology, Inc. Electrostatic discharge protection circuit for semiconductor device
WO1994005042A1 (en) * 1992-08-14 1994-03-03 International Business Machines Corporation Mos device having protection against electrostatic discharge
US5268588A (en) * 1992-09-30 1993-12-07 Texas Instruments Incorporated Semiconductor structure for electrostatic discharge protection
US5365103A (en) * 1993-02-25 1994-11-15 Hewlett-Packard Company Punchthru ESD device along centerline of power pad
JPH07283405A (ja) * 1994-04-13 1995-10-27 Toshiba Corp 半導体装置の保護回路
US5528064A (en) * 1994-08-17 1996-06-18 Texas Instruments Inc. Structure for protecting integrated circuits from electro-static discharge
KR100372905B1 (ko) * 1994-09-13 2003-05-01 애질런트 테크놀로지스, 인크. 산화물영역보호장치
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
JP2822915B2 (ja) * 1995-04-03 1998-11-11 日本電気株式会社 半導体装置
JP2643904B2 (ja) * 1995-04-20 1997-08-25 日本電気株式会社 静電保護素子
US5682047A (en) * 1995-06-07 1997-10-28 Lsi Logic Corporation Input-output (I/O) structure with capacitively triggered thyristor for electrostatic discharge (ESD) protection
US5637887A (en) * 1995-06-07 1997-06-10 Lsi Logic Corporation Silicon controller rectifier (SCR) with capacitive trigger
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
EP0758129B1 (en) * 1995-08-02 2001-05-23 STMicroelectronics S.r.l. Flash EEPROM with integrated device for limiting the erase source voltage
WO1997010615A1 (en) * 1995-09-11 1997-03-20 Analog Devices, Inc. (Adi) Electrostatic discharge protection network and method
KR100214566B1 (ko) * 1997-04-22 1999-08-02 구본준 입력 보호회로
US5936284A (en) * 1997-11-03 1999-08-10 Sgs-Thomson Microelectronics S.R.L. Electrostatic discharge protection circuit and transistor
JPH11204729A (ja) * 1998-01-12 1999-07-30 Mitsubishi Electric Corp 半導体装置
GB2336241B (en) * 1998-01-15 2000-06-14 United Microelectronics Corp Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits
KR100493006B1 (ko) * 1998-06-16 2005-08-04 삼성전자주식회사 정전기보호역할을겸하는블락가드링구조
US6411480B1 (en) 1999-03-01 2002-06-25 International Business Machines Corporation Substrate pumped ESD network with trench structure
US6304423B1 (en) * 1999-06-08 2001-10-16 Delphi Technologies, Inc. Input protection circuit for a semiconductor device
JP2003031669A (ja) * 2001-07-13 2003-01-31 Ricoh Co Ltd 半導体装置
JP2004235199A (ja) * 2003-01-28 2004-08-19 Renesas Technology Corp 半導体装置
US7541648B2 (en) * 2005-01-21 2009-06-02 Micron Technology, Inc. Electrostatic discharge (ESD) protection circuit
CN105912069B (zh) * 2016-06-27 2018-05-01 无锡中感微电子股份有限公司 一种双极型晶体管和电流偏置电路

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS548474A (en) * 1977-06-22 1979-01-22 Hitachi Ltd Gate protection unit
JPS58182861A (ja) * 1982-04-21 1983-10-25 Hitachi Ltd 半導体装置
JPS6132464A (ja) * 1984-07-24 1986-02-15 Nec Corp Ｃｍｏｓ型集積回路装置
JPH0656850B2 (ja) * 1984-08-30 1994-07-27 富士通株式会社 半導体装置
JPS6173375A (ja) * 1984-09-19 1986-04-15 Hitachi Ltd 半導体集積回路装置
JPS62115764A (ja) * 1985-11-15 1987-05-27 Hitachi Vlsi Eng Corp 半導体集積回路装置
IT1186227B (it) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos
JPH0821632B2 (ja) * 1987-01-10 1996-03-04 三菱電機株式会社 半導体集積回路
JPS63233560A (ja) * 1987-03-23 1988-09-29 Toshiba Corp 入力保護回路を備えた半導体集積回路
JPS63276265A (ja) * 1987-05-08 1988-11-14 Nec Corp 半導体集積回路の入出力保護回路
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
US4789917A (en) * 1987-08-31 1988-12-06 National Semiconductor Corp. MOS I/O protection using switched body circuit design

Also Published As

Publication number Publication date
KR920010845B1 (ko) 1992-12-19
US4994874A (en) 1991-02-19
JPH02119262A (ja) 1990-05-07

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