KR900001037A - 반도체 장치 - Google Patents
반도체 장치Info
- Publication number
- KR900001037A KR900001037A KR1019890008849A KR890008849A KR900001037A KR 900001037 A KR900001037 A KR 900001037A KR 1019890008849 A KR1019890008849 A KR 1019890008849A KR 890008849 A KR890008849 A KR 890008849A KR 900001037 A KR900001037 A KR 900001037A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP163804 | 1988-06-30 | ||
JP63163804A JP2666384B2 (ja) | 1988-06-30 | 1988-06-30 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900001037A true KR900001037A (ko) | 1990-01-30 |
KR0159763B1 KR0159763B1 (ko) | 1998-12-01 |
Family
ID=15781022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890008849A KR0159763B1 (ko) | 1988-06-30 | 1989-06-27 | 반도체 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4980748A (ko) |
EP (1) | EP0349107B1 (ko) |
JP (1) | JP2666384B2 (ko) |
KR (1) | KR0159763B1 (ko) |
DE (1) | DE68928951T2 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5221856A (en) * | 1989-04-05 | 1993-06-22 | U.S. Philips Corp. | Bipolar transistor with floating guard region under extrinsic base |
KR920020676A (ko) * | 1991-04-09 | 1992-11-21 | 김광호 | 반도체 장치의 소자분리 방법 |
US5644157A (en) * | 1992-12-25 | 1997-07-01 | Nippondenso Co., Ltd. | High withstand voltage type semiconductor device having an isolation region |
US5525533A (en) * | 1993-06-03 | 1996-06-11 | United Technologies Corporation | Method of making a low voltage coefficient capacitor |
US5545926A (en) | 1993-10-12 | 1996-08-13 | Kabushiki Kaisha Toshiba | Integrated mosfet device with low resistance peripheral diffusion region contacts and low PN-junction failure memory diffusion contacts |
JPH07193121A (ja) * | 1993-12-27 | 1995-07-28 | Toshiba Corp | 半導体装置の製造方法 |
JP3653107B2 (ja) * | 1994-03-14 | 2005-05-25 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
KR0131723B1 (ko) * | 1994-06-08 | 1998-04-14 | 김주용 | 반도체소자 및 그 제조방법 |
JPH0831841A (ja) * | 1994-07-12 | 1996-02-02 | Sony Corp | 半導体装置及びその製造方法 |
JP3360970B2 (ja) * | 1995-05-22 | 2003-01-07 | 株式会社東芝 | 半導体装置の製造方法 |
US6242792B1 (en) | 1996-07-02 | 2001-06-05 | Denso Corporation | Semiconductor device having oblique portion as reflection |
JP2959491B2 (ja) | 1996-10-21 | 1999-10-06 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP3621359B2 (ja) | 2001-05-25 | 2005-02-16 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US20100047987A1 (en) * | 2005-04-28 | 2010-02-25 | Nxp B.V. | Method of fabricating a bipolar transistor |
US8461661B2 (en) * | 2009-04-06 | 2013-06-11 | Polar Semiconductor, Inc. | Locos nitride capping of deep trench polysilicon fill |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2502864B1 (fr) * | 1981-03-24 | 1986-09-05 | Asulab Sa | Circuit integre pour oscillateur a frequence reglable |
JPS5961045A (ja) * | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | 半導体装置の製造方法 |
US4466177A (en) * | 1983-06-30 | 1984-08-21 | International Business Machines Corporation | Storage capacitor optimization for one device FET dynamic RAM cell |
GB2148593B (en) * | 1983-10-14 | 1987-06-10 | Hitachi Ltd | Process for manufacturing the isolating regions of a semiconductor integrated circuit device |
US4688069A (en) * | 1984-03-22 | 1987-08-18 | International Business Machines Corporation | Isolation for high density integrated circuits |
US4609934A (en) * | 1984-04-06 | 1986-09-02 | Advanced Micro Devices, Inc. | Semiconductor device having grooves of different depths for improved device isolation |
DE3580206D1 (de) * | 1984-07-31 | 1990-11-29 | Toshiba Kawasaki Kk | Bipolarer transistor und verfahren zu seiner herstellung. |
US4799099A (en) * | 1986-01-30 | 1989-01-17 | Texas Instruments Incorporated | Bipolar transistor in isolation well with angled corners |
US4666556A (en) * | 1986-05-12 | 1987-05-19 | International Business Machines Corporation | Trench sidewall isolation by polysilicon oxidation |
JPS6395662A (ja) * | 1986-10-13 | 1988-04-26 | Hitachi Ltd | 半導体装置 |
JPH01171270A (ja) * | 1987-12-26 | 1989-07-06 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1988
- 1988-06-30 JP JP63163804A patent/JP2666384B2/ja not_active Expired - Fee Related
-
1989
- 1989-05-08 EP EP89304626A patent/EP0349107B1/en not_active Expired - Lifetime
- 1989-05-08 DE DE68928951T patent/DE68928951T2/de not_active Expired - Fee Related
- 1989-06-05 US US07/361,554 patent/US4980748A/en not_active Expired - Lifetime
- 1989-06-27 KR KR1019890008849A patent/KR0159763B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2666384B2 (ja) | 1997-10-22 |
DE68928951D1 (de) | 1999-04-22 |
EP0349107A3 (en) | 1991-10-09 |
DE68928951T2 (de) | 1999-09-09 |
JPH0212923A (ja) | 1990-01-17 |
KR0159763B1 (ko) | 1998-12-01 |
EP0349107A2 (en) | 1990-01-03 |
US4980748A (en) | 1990-12-25 |
EP0349107B1 (en) | 1999-03-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19890627 |
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A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19940622 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19890627 Comment text: Patent Application |
|
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PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19971230 Patent event code: PE09021S01D |
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Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19980527 |
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Comment text: Registration of Establishment Patent event date: 19980813 Patent event code: PR07011E01D |
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