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KR900001037A - 반도체 장치 - Google Patents

반도체 장치

Info

Publication number
KR900001037A
KR900001037A KR1019890008849A KR890008849A KR900001037A KR 900001037 A KR900001037 A KR 900001037A KR 1019890008849 A KR1019890008849 A KR 1019890008849A KR 890008849 A KR890008849 A KR 890008849A KR 900001037 A KR900001037 A KR 900001037A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
KR1019890008849A
Other languages
English (en)
Other versions
KR0159763B1 (ko
Inventor
히로끼 호즈미
Original Assignee
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤
Publication of KR900001037A publication Critical patent/KR900001037A/ko
Application granted granted Critical
Publication of KR0159763B1 publication Critical patent/KR0159763B1/ko

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/763Polycrystalline semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
KR1019890008849A 1988-06-30 1989-06-27 반도체 장치 KR0159763B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP163804 1988-06-30
JP63163804A JP2666384B2 (ja) 1988-06-30 1988-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR900001037A true KR900001037A (ko) 1990-01-30
KR0159763B1 KR0159763B1 (ko) 1998-12-01

Family

ID=15781022

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890008849A KR0159763B1 (ko) 1988-06-30 1989-06-27 반도체 장치

Country Status (5)

Country Link
US (1) US4980748A (ko)
EP (1) EP0349107B1 (ko)
JP (1) JP2666384B2 (ko)
KR (1) KR0159763B1 (ko)
DE (1) DE68928951T2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221856A (en) * 1989-04-05 1993-06-22 U.S. Philips Corp. Bipolar transistor with floating guard region under extrinsic base
KR920020676A (ko) * 1991-04-09 1992-11-21 김광호 반도체 장치의 소자분리 방법
US5644157A (en) * 1992-12-25 1997-07-01 Nippondenso Co., Ltd. High withstand voltage type semiconductor device having an isolation region
US5525533A (en) * 1993-06-03 1996-06-11 United Technologies Corporation Method of making a low voltage coefficient capacitor
US5545926A (en) 1993-10-12 1996-08-13 Kabushiki Kaisha Toshiba Integrated mosfet device with low resistance peripheral diffusion region contacts and low PN-junction failure memory diffusion contacts
JPH07193121A (ja) * 1993-12-27 1995-07-28 Toshiba Corp 半導体装置の製造方法
JP3653107B2 (ja) * 1994-03-14 2005-05-25 株式会社ルネサステクノロジ 半導体装置およびその製造方法
KR0131723B1 (ko) * 1994-06-08 1998-04-14 김주용 반도체소자 및 그 제조방법
JPH0831841A (ja) * 1994-07-12 1996-02-02 Sony Corp 半導体装置及びその製造方法
JP3360970B2 (ja) * 1995-05-22 2003-01-07 株式会社東芝 半導体装置の製造方法
US6242792B1 (en) 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection
JP2959491B2 (ja) 1996-10-21 1999-10-06 日本電気株式会社 半導体装置及びその製造方法
JP3621359B2 (ja) 2001-05-25 2005-02-16 Necエレクトロニクス株式会社 半導体装置及びその製造方法
US20100047987A1 (en) * 2005-04-28 2010-02-25 Nxp B.V. Method of fabricating a bipolar transistor
US8461661B2 (en) * 2009-04-06 2013-06-11 Polar Semiconductor, Inc. Locos nitride capping of deep trench polysilicon fill

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2502864B1 (fr) * 1981-03-24 1986-09-05 Asulab Sa Circuit integre pour oscillateur a frequence reglable
JPS5961045A (ja) * 1982-09-29 1984-04-07 Fujitsu Ltd 半導体装置の製造方法
US4466177A (en) * 1983-06-30 1984-08-21 International Business Machines Corporation Storage capacitor optimization for one device FET dynamic RAM cell
GB2148593B (en) * 1983-10-14 1987-06-10 Hitachi Ltd Process for manufacturing the isolating regions of a semiconductor integrated circuit device
US4688069A (en) * 1984-03-22 1987-08-18 International Business Machines Corporation Isolation for high density integrated circuits
US4609934A (en) * 1984-04-06 1986-09-02 Advanced Micro Devices, Inc. Semiconductor device having grooves of different depths for improved device isolation
DE3580206D1 (de) * 1984-07-31 1990-11-29 Toshiba Kawasaki Kk Bipolarer transistor und verfahren zu seiner herstellung.
US4799099A (en) * 1986-01-30 1989-01-17 Texas Instruments Incorporated Bipolar transistor in isolation well with angled corners
US4666556A (en) * 1986-05-12 1987-05-19 International Business Machines Corporation Trench sidewall isolation by polysilicon oxidation
JPS6395662A (ja) * 1986-10-13 1988-04-26 Hitachi Ltd 半導体装置
JPH01171270A (ja) * 1987-12-26 1989-07-06 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2666384B2 (ja) 1997-10-22
DE68928951D1 (de) 1999-04-22
EP0349107A3 (en) 1991-10-09
DE68928951T2 (de) 1999-09-09
JPH0212923A (ja) 1990-01-17
KR0159763B1 (ko) 1998-12-01
EP0349107A2 (en) 1990-01-03
US4980748A (en) 1990-12-25
EP0349107B1 (en) 1999-03-17

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