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JPS5248478A - Process for production of semiconductor device - Google Patents

Process for production of semiconductor device

Info

Publication number
JPS5248478A
JPS5248478A JP12463575A JP12463575A JPS5248478A JP S5248478 A JPS5248478 A JP S5248478A JP 12463575 A JP12463575 A JP 12463575A JP 12463575 A JP12463575 A JP 12463575A JP S5248478 A JPS5248478 A JP S5248478A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
active layer
fet
crystal defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12463575A
Other languages
Japanese (ja)
Inventor
Koichiro Kotani
Hidetake Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12463575A priority Critical patent/JPS5248478A/en
Publication of JPS5248478A publication Critical patent/JPS5248478A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain an FET that facilitates electrode formation without causing crystal defects in its active layer, by depositing gate electrodes of a small width on a semiconductor active layer, thence forming source and drain electrodes of a larger width.
COPYRIGHT: (C)1977,JPO&Japio
JP12463575A 1975-10-16 1975-10-16 Process for production of semiconductor device Pending JPS5248478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12463575A JPS5248478A (en) 1975-10-16 1975-10-16 Process for production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12463575A JPS5248478A (en) 1975-10-16 1975-10-16 Process for production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5248478A true JPS5248478A (en) 1977-04-18

Family

ID=14890280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12463575A Pending JPS5248478A (en) 1975-10-16 1975-10-16 Process for production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5248478A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157269A (en) * 1979-05-25 1980-12-06 Fujitsu Ltd Semiconductor device
JPS5785265A (en) * 1980-11-18 1982-05-27 Sumitomo Electric Ind Ltd Semiconductor device and its manufacture
JPS5787178A (en) * 1980-11-19 1982-05-31 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPS57114288A (en) * 1981-01-07 1982-07-16 Nec Corp Manufacture of field effect transistor
JPS57153476A (en) * 1981-03-17 1982-09-22 Nec Corp Maufacture of field effect transistor
JPS57173980A (en) * 1981-04-21 1982-10-26 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPS6057980A (en) * 1983-09-09 1985-04-03 Fujitsu Ltd Manufacture of semiconductor device
JPS60218894A (en) * 1984-04-13 1985-11-01 Tokyo Inst Of Technol Compact co2 laser device whose frequency is stable and which can perform broad-band sweeping

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936787A (en) * 1972-08-12 1974-04-05
JPS49107481A (en) * 1973-02-14 1974-10-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936787A (en) * 1972-08-12 1974-04-05
JPS49107481A (en) * 1973-02-14 1974-10-12

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157269A (en) * 1979-05-25 1980-12-06 Fujitsu Ltd Semiconductor device
JPS5785265A (en) * 1980-11-18 1982-05-27 Sumitomo Electric Ind Ltd Semiconductor device and its manufacture
JPS5787178A (en) * 1980-11-19 1982-05-31 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPS6336148B2 (en) * 1980-11-19 1988-07-19 Sumitomo Electric Industries
JPS57114288A (en) * 1981-01-07 1982-07-16 Nec Corp Manufacture of field effect transistor
JPS57153476A (en) * 1981-03-17 1982-09-22 Nec Corp Maufacture of field effect transistor
JPS57173980A (en) * 1981-04-21 1982-10-26 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPH0126195B2 (en) * 1981-04-21 1989-05-22 Sumitomo Electric Industries
JPS6057980A (en) * 1983-09-09 1985-04-03 Fujitsu Ltd Manufacture of semiconductor device
JPH0219622B2 (en) * 1983-09-09 1990-05-02 Fujitsu Ltd
JPS60218894A (en) * 1984-04-13 1985-11-01 Tokyo Inst Of Technol Compact co2 laser device whose frequency is stable and which can perform broad-band sweeping

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