[go: up one dir, main page]

JPS55157269A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55157269A
JPS55157269A JP6463679A JP6463679A JPS55157269A JP S55157269 A JPS55157269 A JP S55157269A JP 6463679 A JP6463679 A JP 6463679A JP 6463679 A JP6463679 A JP 6463679A JP S55157269 A JPS55157269 A JP S55157269A
Authority
JP
Japan
Prior art keywords
layer
actuating
passivation
grown
influence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6463679A
Other languages
Japanese (ja)
Inventor
Akihiro Shibatomi
Kazuto Ogasawara
Koichiro Kotani
Toshio Usui
Yasutaka Hirachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6463679A priority Critical patent/JPS55157269A/en
Publication of JPS55157269A publication Critical patent/JPS55157269A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To eliminate the influence to the actuating layer of a depletion layer caused by an interfacial level by providing a semiconductor layer with a lower resistance than the actuating layer on the surface of a semiconductor actuating layer. CONSTITUTION:A buffer layer 2 and an n-type activating layer 3 are grown on a substrate 1 and an n<+>-type layer is grown on the said substrate as a passivation layer 9. Then a source electrode 5, consisting of gold germanium, and a drain electrode 6 are formed on the said passivation layer 9. Next, the passivation layer 9 is selectively removed using a photo resist layer 10 as a mask and a gate metal, consisting of aluminum, is evaporated. Thus the stretch of the depletion layer in the low-resistive passivation crystalline layer, caused by an interfacial level potential, is controlled and its influence is not extended to the actuating layer.
JP6463679A 1979-05-25 1979-05-25 Semiconductor device Pending JPS55157269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6463679A JPS55157269A (en) 1979-05-25 1979-05-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6463679A JPS55157269A (en) 1979-05-25 1979-05-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55157269A true JPS55157269A (en) 1980-12-06

Family

ID=13263944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6463679A Pending JPS55157269A (en) 1979-05-25 1979-05-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55157269A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879774A (en) * 1981-11-06 1983-05-13 Fujitsu Ltd Semiconductor device
JPS6085567A (en) * 1983-10-17 1985-05-15 Mitsubishi Electric Corp Field-effect transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495582A (en) * 1972-05-03 1974-01-18
JPS524425A (en) * 1975-07-01 1977-01-13 Oizumi Koujiyou Kk Structure and improvements of casting method of heat exchanging device with fins using boiler
JPS5248478A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device
JPS5257786A (en) * 1975-11-07 1977-05-12 Toshiba Corp Field effect transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495582A (en) * 1972-05-03 1974-01-18
JPS524425A (en) * 1975-07-01 1977-01-13 Oizumi Koujiyou Kk Structure and improvements of casting method of heat exchanging device with fins using boiler
JPS5248478A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device
JPS5257786A (en) * 1975-11-07 1977-05-12 Toshiba Corp Field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879774A (en) * 1981-11-06 1983-05-13 Fujitsu Ltd Semiconductor device
JPS6085567A (en) * 1983-10-17 1985-05-15 Mitsubishi Electric Corp Field-effect transistor

Similar Documents

Publication Publication Date Title
JPS54140483A (en) Semiconductor device
JPS55157269A (en) Semiconductor device
JPS55138877A (en) Method of fabricating semiconductor device
JPS546777A (en) Field effect type transistor
JPS5633881A (en) Manufacture of semiconductor device
JPS5565455A (en) Manufacture of semiconductor device
JPS5526666A (en) Insulated gate type semiconductor device
JPS5546555A (en) Semiconductor device
JPS5539688A (en) Integrated circuit device of semiconductors
JPS52117582A (en) Mos type semiconductor device
JPS54111792A (en) Semiconductor device and its manufacture
JPS54105979A (en) Semiconductor device
JPS5415681A (en) Manufacture of field effect transistor
JPS55162270A (en) Semiconductor device
JPS5260080A (en) Semiconductor device
JPS54148385A (en) High-speed switching field effect transistor
JPS6484746A (en) Semiconductor device
JPS56108275A (en) Field effect transistor
JPS5432981A (en) Manufacture of longitudinal mos field effect transistor
JPS5487192A (en) Mis type semiconductor intergrated circuit and its manufacture
JPS5339083A (en) Production of silicon gate mis semiconductor device
JPS55120167A (en) Field effect type semiconductor device
JPS55165679A (en) Preparation of semiconductor device
JPS5490981A (en) Semiconductor device
JPS5490979A (en) Integrated circuit