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JPS55120167A - Field effect type semiconductor device - Google Patents

Field effect type semiconductor device

Info

Publication number
JPS55120167A
JPS55120167A JP2702079A JP2702079A JPS55120167A JP S55120167 A JPS55120167 A JP S55120167A JP 2702079 A JP2702079 A JP 2702079A JP 2702079 A JP2702079 A JP 2702079A JP S55120167 A JPS55120167 A JP S55120167A
Authority
JP
Japan
Prior art keywords
layer
type
active layer
field effect
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2702079A
Other languages
Japanese (ja)
Inventor
Koichi Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2702079A priority Critical patent/JPS55120167A/en
Publication of JPS55120167A publication Critical patent/JPS55120167A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To provide a low noise junction type field effect transistor (J-FET) by epitaxially growing a high resistance layer and an active layer while matching with a lattice on a monocrystal line substrate, deffusing source and drain regions in the active layer, and forming a gate electrode between the source region and the drain region. CONSTITUTION:A high specific resistance layer 2 of Al1-x-yGaxInyAs1-zSbz is epitaxially grown on a monocrystal line substrate 1 of GaSb or InAs while retaining x=0-1, y=0-1, (x+y)<1 and z=0-1. Then, an active layer 3' of n- or p-type Ga1-uInuAs1-vSbv is epitaxially grown on the layer 2 while matching the lattice similarly to the above, and an n<+>-type source region 4' and an n<+>-type drain region 5' are diffused in the layer 3' retaining u=0-1, v=0-1. Then, metal electrodes 4, 5 are mounted on the regions 4', 5', respectively, and a Schottky junction metal gate electrode 9 is coated through an insulating film 8 on the layer 3' exposed therebetween. Thus, even if the FET is not operated in cryogenic temperature, it can stably operate.
JP2702079A 1979-03-08 1979-03-08 Field effect type semiconductor device Pending JPS55120167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2702079A JPS55120167A (en) 1979-03-08 1979-03-08 Field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2702079A JPS55120167A (en) 1979-03-08 1979-03-08 Field effect type semiconductor device

Publications (1)

Publication Number Publication Date
JPS55120167A true JPS55120167A (en) 1980-09-16

Family

ID=12209398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2702079A Pending JPS55120167A (en) 1979-03-08 1979-03-08 Field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS55120167A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002083823A (en) * 2000-09-08 2002-03-22 Fujitsu Ltd Compound semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126282A (en) * 1977-04-08 1978-11-04 Thomson Csf Fet transistor
JPS5412261A (en) * 1977-06-28 1979-01-29 Mitsubishi Electric Corp Semiconductor wafer
JPS5595370A (en) * 1979-01-10 1980-07-19 Nec Corp Compound semiconductor field-effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126282A (en) * 1977-04-08 1978-11-04 Thomson Csf Fet transistor
JPS5412261A (en) * 1977-06-28 1979-01-29 Mitsubishi Electric Corp Semiconductor wafer
JPS5595370A (en) * 1979-01-10 1980-07-19 Nec Corp Compound semiconductor field-effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002083823A (en) * 2000-09-08 2002-03-22 Fujitsu Ltd Compound semiconductor device

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