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JPS5412261A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPS5412261A
JPS5412261A JP7742777A JP7742777A JPS5412261A JP S5412261 A JPS5412261 A JP S5412261A JP 7742777 A JP7742777 A JP 7742777A JP 7742777 A JP7742777 A JP 7742777A JP S5412261 A JPS5412261 A JP S5412261A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
band width
forbidden band
buffer layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7742777A
Other languages
Japanese (ja)
Inventor
Takuji Shimanoe
Toshio Murotani
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7742777A priority Critical patent/JPS5412261A/en
Publication of JPS5412261A publication Critical patent/JPS5412261A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To produce an acute carrier distribution at the interface of a semi-insulating AlGaAs buffer layer and a GaAs operating layer by making the forbidden band width of the buffer layer larger than the forbidden band width of the operating layer at the time of laminating and growing these layers on a GaAs substrate thereby forming the substrate for FETs, etc.
COPYRIGHT: (C)1979,JPO&Japio
JP7742777A 1977-06-28 1977-06-28 Semiconductor wafer Pending JPS5412261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7742777A JPS5412261A (en) 1977-06-28 1977-06-28 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7742777A JPS5412261A (en) 1977-06-28 1977-06-28 Semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5412261A true JPS5412261A (en) 1979-01-29

Family

ID=13633678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7742777A Pending JPS5412261A (en) 1977-06-28 1977-06-28 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5412261A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120167A (en) * 1979-03-08 1980-09-16 Nippon Telegr & Teleph Corp <Ntt> Field effect type semiconductor device
US4593304A (en) * 1981-04-20 1986-06-03 Hughes Aircraft Company Heterostructure interdigital high speed photoconductive detector
US4696648A (en) * 1981-04-20 1987-09-29 Hughes Aircraft Company Heterostructure interdigital high speed photoconductive detector
US4799088A (en) * 1980-07-28 1989-01-17 Fujitsu Limited High electron mobility single heterojunction semiconductor devices and methods for production thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120167A (en) * 1979-03-08 1980-09-16 Nippon Telegr & Teleph Corp <Ntt> Field effect type semiconductor device
US4799088A (en) * 1980-07-28 1989-01-17 Fujitsu Limited High electron mobility single heterojunction semiconductor devices and methods for production thereof
US4593304A (en) * 1981-04-20 1986-06-03 Hughes Aircraft Company Heterostructure interdigital high speed photoconductive detector
US4696648A (en) * 1981-04-20 1987-09-29 Hughes Aircraft Company Heterostructure interdigital high speed photoconductive detector

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