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JPS5421172A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5421172A
JPS5421172A JP8651777A JP8651777A JPS5421172A JP S5421172 A JPS5421172 A JP S5421172A JP 8651777 A JP8651777 A JP 8651777A JP 8651777 A JP8651777 A JP 8651777A JP S5421172 A JPS5421172 A JP S5421172A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
semiconductors
radiating
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8651777A
Other languages
Japanese (ja)
Inventor
Masaki Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8651777A priority Critical patent/JPS5421172A/en
Publication of JPS5421172A publication Critical patent/JPS5421172A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To manufacture oxide film selectively at a low temperature, by radiating the light having the energy more than forbidden band width of semiconductors on the semiconductor surface under oxygen or oxide compound gas or the both.
COPYRIGHT: (C)1979,JPO&Japio
JP8651777A 1977-07-18 1977-07-18 Manufacture for semiconductor device Pending JPS5421172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8651777A JPS5421172A (en) 1977-07-18 1977-07-18 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8651777A JPS5421172A (en) 1977-07-18 1977-07-18 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5421172A true JPS5421172A (en) 1979-02-17

Family

ID=13889172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8651777A Pending JPS5421172A (en) 1977-07-18 1977-07-18 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5421172A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5634681U (en) * 1979-08-25 1981-04-04
JPS5642347A (en) * 1979-09-14 1981-04-20 Nippon Telegr & Teleph Corp <Ntt> Passivation of surface of compound semiconductor
JPS56124236A (en) * 1980-03-03 1981-09-29 Nippon Telegr & Teleph Corp <Ntt> Method for selective thermal oxidized film formation on semiconductor substrate
JPS577127A (en) * 1980-06-16 1982-01-14 Matsushita Electric Ind Co Ltd Manufacture of compound semiconductor device
JPS57133635A (en) * 1981-02-12 1982-08-18 Nippon Telegr & Teleph Corp <Ntt> Formation of insulating film
JPS57134936A (en) * 1981-02-16 1982-08-20 Nippon Telegr & Teleph Corp <Ntt> Forming method of insulation film on compound semiconductor
JPS57160133A (en) * 1981-03-27 1982-10-02 Makoto Matsuura Oxidation of semiconductor compound
JPS58192330A (en) * 1982-05-06 1983-11-09 Oak Seisakusho:Kk Oxidation treating method for surface of silicon wafer
JPS61199638A (en) * 1985-02-28 1986-09-04 Sony Corp Method for formation of insulating film

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5634681U (en) * 1979-08-25 1981-04-04
JPS5642347A (en) * 1979-09-14 1981-04-20 Nippon Telegr & Teleph Corp <Ntt> Passivation of surface of compound semiconductor
JPS56124236A (en) * 1980-03-03 1981-09-29 Nippon Telegr & Teleph Corp <Ntt> Method for selective thermal oxidized film formation on semiconductor substrate
JPS577127A (en) * 1980-06-16 1982-01-14 Matsushita Electric Ind Co Ltd Manufacture of compound semiconductor device
JPS57133635A (en) * 1981-02-12 1982-08-18 Nippon Telegr & Teleph Corp <Ntt> Formation of insulating film
JPS57134936A (en) * 1981-02-16 1982-08-20 Nippon Telegr & Teleph Corp <Ntt> Forming method of insulation film on compound semiconductor
JPS57160133A (en) * 1981-03-27 1982-10-02 Makoto Matsuura Oxidation of semiconductor compound
JPS58192330A (en) * 1982-05-06 1983-11-09 Oak Seisakusho:Kk Oxidation treating method for surface of silicon wafer
JPS61199638A (en) * 1985-02-28 1986-09-04 Sony Corp Method for formation of insulating film

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