JPS57192069A - Insulated gate field effect semiconductor device - Google Patents
Insulated gate field effect semiconductor deviceInfo
- Publication number
- JPS57192069A JPS57192069A JP56076580A JP7658081A JPS57192069A JP S57192069 A JPS57192069 A JP S57192069A JP 56076580 A JP56076580 A JP 56076580A JP 7658081 A JP7658081 A JP 7658081A JP S57192069 A JPS57192069 A JP S57192069A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- semiconductor device
- field effect
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:To contrive to reduce the occupying area of element and to reduce the size of an insulated gate field effect semiconductor device by a method wherein the source or drain region of the second MISFET is connected directly to the source or drain region of the first MISFET with the reverse conductive region. CONSTITUTION:The N<+> type semiconductor region 3, 4 and an N<+> type Si gate electrode 6 are provided in the region surrounded with SiO2 films 2 on the surface of a P type Si substrate 1, and an N channel MOSFET Q3 or Q4 is provided. A polycrystalline Si layer 7 for formation of the P channel MOSFET Q1 or Q2 is provided from the upper part of the film 2 being at the neighborhood of the MOSFET up to the position coming in contact directly with the drain region 3 of the FET Q3 or Q4. The P<+> type source region 8 and drain region 9 are provided in the layer 7 thereof. The reverse conductive type (N<+> type) region 12 is provided in the layer 7 in the condition coming in contact with the region 9, andf moreover connected directly to the region 3. A P-N junction diode D1 or D2 is formed by existence of the region 12 thereof between the region 9, and the regions 9, 3 are connected directly through the diode D1 or D2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56076580A JPS57192069A (en) | 1981-05-22 | 1981-05-22 | Insulated gate field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56076580A JPS57192069A (en) | 1981-05-22 | 1981-05-22 | Insulated gate field effect semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57192069A true JPS57192069A (en) | 1982-11-26 |
Family
ID=13609204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56076580A Pending JPS57192069A (en) | 1981-05-22 | 1981-05-22 | Insulated gate field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57192069A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59217292A (en) * | 1983-05-23 | 1984-12-07 | Nec Corp | Semiconductor memory cell |
| JPH01214156A (en) * | 1988-02-23 | 1989-08-28 | Nec Corp | Bipolar memory |
| US5521401A (en) * | 1992-08-21 | 1996-05-28 | Sgs-Thomson Microelectronics, Inc. | P-N junction in a vertical memory cell that creates a high resistance load |
| US5821136A (en) * | 1989-01-18 | 1998-10-13 | Stmicroelectronics, Inc. | Inverted field-effect device with polycrystalline silicon/germanium channel |
| US6140684A (en) * | 1997-06-24 | 2000-10-31 | Stmicroelectronic, Inc. | SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5562771A (en) * | 1978-11-02 | 1980-05-12 | Toshiba Corp | Integrated circuit device |
-
1981
- 1981-05-22 JP JP56076580A patent/JPS57192069A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5562771A (en) * | 1978-11-02 | 1980-05-12 | Toshiba Corp | Integrated circuit device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59217292A (en) * | 1983-05-23 | 1984-12-07 | Nec Corp | Semiconductor memory cell |
| JPH01214156A (en) * | 1988-02-23 | 1989-08-28 | Nec Corp | Bipolar memory |
| US5821136A (en) * | 1989-01-18 | 1998-10-13 | Stmicroelectronics, Inc. | Inverted field-effect device with polycrystalline silicon/germanium channel |
| US5521401A (en) * | 1992-08-21 | 1996-05-28 | Sgs-Thomson Microelectronics, Inc. | P-N junction in a vertical memory cell that creates a high resistance load |
| US6140684A (en) * | 1997-06-24 | 2000-10-31 | Stmicroelectronic, Inc. | SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers |
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