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JPS57134971A - Mis type simiconductor device and manufacture of the same - Google Patents

Mis type simiconductor device and manufacture of the same

Info

Publication number
JPS57134971A
JPS57134971A JP56021002A JP2100281A JPS57134971A JP S57134971 A JPS57134971 A JP S57134971A JP 56021002 A JP56021002 A JP 56021002A JP 2100281 A JP2100281 A JP 2100281A JP S57134971 A JPS57134971 A JP S57134971A
Authority
JP
Japan
Prior art keywords
region
source
silicon oxide
channel region
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56021002A
Other languages
Japanese (ja)
Inventor
Takehisa Yashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56021002A priority Critical patent/JPS57134971A/en
Publication of JPS57134971A publication Critical patent/JPS57134971A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To realize flattering of an element and improve reliability by utilizing a polycrystal silicon layer on a substrate. CONSTITUTION:An N type source region 23 and drain region 24 are formed in a P type single crystal semiconductor substrate 22 and a channel region 25 is formed between those two regions. A source contact metal 26 and a drain contact metal 27 are formed and a source electrode 28 and a drain electrode 29 of silicide are formed on the respective metals. A gate electrode 31 of polycrystalline silicon is formed on the channel region 25 via gate insulation film 30 and the side of the channel region 25 is insulated by polycrystalline silicon oxide films 32 and 33 and the top surface of the region 25 is covered by silicon nitride film 38. The surface is flattened by forming elements separating insulation films 36 and 37 of polycrystalline silicon oxide layer on the substrate 22 via silicon oxide films 34 and 35 surrounding thses gate, source and drain electrode regions.
JP56021002A 1981-02-16 1981-02-16 Mis type simiconductor device and manufacture of the same Pending JPS57134971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56021002A JPS57134971A (en) 1981-02-16 1981-02-16 Mis type simiconductor device and manufacture of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56021002A JPS57134971A (en) 1981-02-16 1981-02-16 Mis type simiconductor device and manufacture of the same

Publications (1)

Publication Number Publication Date
JPS57134971A true JPS57134971A (en) 1982-08-20

Family

ID=12042882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56021002A Pending JPS57134971A (en) 1981-02-16 1981-02-16 Mis type simiconductor device and manufacture of the same

Country Status (1)

Country Link
JP (1) JPS57134971A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187060A (en) * 1984-03-06 1985-09-24 Seiko Epson Corp Semiconductor device
JPS61185974A (en) * 1985-02-13 1986-08-19 Toshiba Corp Manufacturing method of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240968A (en) * 1975-09-29 1977-03-30 Toshiba Corp Process for production of semiconductor device
JPS5282078A (en) * 1975-12-29 1977-07-08 Fujitsu Ltd Production of mos transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240968A (en) * 1975-09-29 1977-03-30 Toshiba Corp Process for production of semiconductor device
JPS5282078A (en) * 1975-12-29 1977-07-08 Fujitsu Ltd Production of mos transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187060A (en) * 1984-03-06 1985-09-24 Seiko Epson Corp Semiconductor device
JPS61185974A (en) * 1985-02-13 1986-08-19 Toshiba Corp Manufacturing method of semiconductor device

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