JPS57201080A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57201080A JPS57201080A JP56085639A JP8563981A JPS57201080A JP S57201080 A JPS57201080 A JP S57201080A JP 56085639 A JP56085639 A JP 56085639A JP 8563981 A JP8563981 A JP 8563981A JP S57201080 A JPS57201080 A JP S57201080A
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- gap
- semiconductor substrate
- sequently
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Abstract
PURPOSE:To acquire a MOS type semiconductor device of high density, by aligning a MOS transistor channel to a semiconductor substrate depth. CONSTITUTION:A gap 8 is provided on a portion to be a channel region of MOS transistor. A thermo-oxide film 6 and a nitride film 7 are formed sequently. Next, a thick oxide film 9 is formed on a field region by selective diffusion method. A gate insulation film 10 and a gate electrode 11 are formed sequently on the gap 8. Next, source and drain regions 12, 12' are formed to constitute a MOS transistor. The gap 8 is provided on a semiconductor substrate 1'. It is formed as a channel region 13 of MOS transistor to align the semiconductor substrate 1' depth. This constitutes a fine MOS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56085639A JPS57201080A (en) | 1981-06-05 | 1981-06-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56085639A JPS57201080A (en) | 1981-06-05 | 1981-06-05 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57201080A true JPS57201080A (en) | 1982-12-09 |
Family
ID=13864393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56085639A Pending JPS57201080A (en) | 1981-06-05 | 1981-06-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57201080A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006190952A (en) * | 2004-12-30 | 2006-07-20 | Hynix Semiconductor Inc | Manufacturing method of semiconductor device |
| JP2006210913A (en) * | 2005-01-31 | 2006-08-10 | Hynix Semiconductor Inc | Semiconductor device having step gate and manufacturing method thereof |
-
1981
- 1981-06-05 JP JP56085639A patent/JPS57201080A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006190952A (en) * | 2004-12-30 | 2006-07-20 | Hynix Semiconductor Inc | Manufacturing method of semiconductor device |
| JP4634877B2 (en) * | 2004-12-30 | 2011-02-16 | 株式会社ハイニックスセミコンダクター | Manufacturing method of semiconductor device |
| JP2006210913A (en) * | 2005-01-31 | 2006-08-10 | Hynix Semiconductor Inc | Semiconductor device having step gate and manufacturing method thereof |
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