JPS6461019A - Manufacture of compound semiconductor device - Google Patents
Manufacture of compound semiconductor deviceInfo
- Publication number
- JPS6461019A JPS6461019A JP21942787A JP21942787A JPS6461019A JP S6461019 A JPS6461019 A JP S6461019A JP 21942787 A JP21942787 A JP 21942787A JP 21942787 A JP21942787 A JP 21942787A JP S6461019 A JPS6461019 A JP S6461019A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gaas
- electrode
- breakdown
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To reduce the stress concentration of a GaAs surface and to eliminate the breakdown of a GaAs crystal by forming a protective film formed on the upper face of a gate electrode of a silicon nitride film and a film made of a material having larger thermal expansion coefficient than that of gallium arsenide. CONSTITUTION:A GaAs operating layer 3 is formed on the surface of a GaAs substrate 5. Tungsten is so deposited on the substrate 5 as to cover the film 3. A Schottky gate electrode 1 is formed by patterning. With the electrode 1 as a mask n<+> type layers 4a, 4b are formed. Then, a source electrode 2a and a drain electrode 2b are formed. Thereafter, it is covered with an SiN film 6a by a sputtering method as a first layer insulating film. Further, it is covered with a TiSi film 6b by a sputtering method as a second layer insulating film. A second layer metal film 7 is formed on the electrodes 1, 2a, 2b. Then, a stress on the GaAs surface under the edge of the electrode 1 is reduced, and the breakdown of the GaAs crystal does not occur.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21942787A JPS6461019A (en) | 1987-09-01 | 1987-09-01 | Manufacture of compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21942787A JPS6461019A (en) | 1987-09-01 | 1987-09-01 | Manufacture of compound semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461019A true JPS6461019A (en) | 1989-03-08 |
Family
ID=16735225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21942787A Pending JPS6461019A (en) | 1987-09-01 | 1987-09-01 | Manufacture of compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461019A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9789991B2 (en) | 2013-08-28 | 2017-10-17 | Avery Dennison Corporation | Reactor plate assembly and brush anvil for use in conjunction therewith |
| US9792839B2 (en) | 2010-12-23 | 2017-10-17 | Avery Dennison Corporation | Wide filament fastener and stock |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6257255A (en) * | 1985-09-06 | 1987-03-12 | Agency Of Ind Science & Technol | Manufacture of compound semiconductor device |
-
1987
- 1987-09-01 JP JP21942787A patent/JPS6461019A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6257255A (en) * | 1985-09-06 | 1987-03-12 | Agency Of Ind Science & Technol | Manufacture of compound semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9792839B2 (en) | 2010-12-23 | 2017-10-17 | Avery Dennison Corporation | Wide filament fastener and stock |
| US9789991B2 (en) | 2013-08-28 | 2017-10-17 | Avery Dennison Corporation | Reactor plate assembly and brush anvil for use in conjunction therewith |
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