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JPS54158880A - Compound semiconductor device and its manufacture - Google Patents

Compound semiconductor device and its manufacture

Info

Publication number
JPS54158880A
JPS54158880A JP6849578A JP6849578A JPS54158880A JP S54158880 A JPS54158880 A JP S54158880A JP 6849578 A JP6849578 A JP 6849578A JP 6849578 A JP6849578 A JP 6849578A JP S54158880 A JPS54158880 A JP S54158880A
Authority
JP
Japan
Prior art keywords
layer
schottky gate
gate electrode
bonded
unneeded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6849578A
Other languages
Japanese (ja)
Inventor
Atsushi Nagashima
Akio Shimano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6849578A priority Critical patent/JPS54158880A/en
Publication of JPS54158880A publication Critical patent/JPS54158880A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a Schottky gate FET which has high-frequency characteristics and excellent noise index by employing an anode oxidizing method with good controllability on an etching degree.
CONSTITUTION: On semi-insulating GaAs substrate 31, N-type GaAs layer 32 is formed by epitaxial growth and a bonding pad position for a Schottky gate electrode is removed. On layer 32, pattern 33 of photo resist is provided and used as a mask to anode-oxidize the surface of layer 32 to a fixed thickness. Next, Schottky gate electrode formation metal is vapor-deposited and changed into Schottky gate electrode 34 by a lift-off method, and insulator 36 is bonded to the entire surface and then removed selectively to expose the unneeded part of layer 32. Next, ohmic electrode formation metal is bonded and alloyed with layer 32 by heating to provide ohmic electrode 35, and unneeded layer 32 is removed by etching to remove layer 36 in the bonding region, where a bonding wire is fitted.
COPYRIGHT: (C)1979,JPO&Japio
JP6849578A 1978-06-06 1978-06-06 Compound semiconductor device and its manufacture Pending JPS54158880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6849578A JPS54158880A (en) 1978-06-06 1978-06-06 Compound semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6849578A JPS54158880A (en) 1978-06-06 1978-06-06 Compound semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS54158880A true JPS54158880A (en) 1979-12-15

Family

ID=13375324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6849578A Pending JPS54158880A (en) 1978-06-06 1978-06-06 Compound semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54158880A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104483A (en) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Semiconductor device
US6261911B1 (en) 1999-02-13 2001-07-17 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a junction in a semiconductor device
US6277677B1 (en) 1999-04-12 2001-08-21 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device
US6281085B1 (en) 1999-06-28 2001-08-28 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device
US6300209B1 (en) 1999-06-24 2001-10-09 Hyundai Electronics Industries Co., Ltd. Method of fabricating triple well of semiconductor device using SEG
US6309939B1 (en) 1999-06-18 2001-10-30 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device
US6365473B1 (en) 1999-06-29 2002-04-02 Hyundai Electronics Industries Co. Ltd. Method of manufacturing a transistor in a semiconductor device
US6368927B1 (en) 1999-06-29 2002-04-09 Hyunadi Electronics Industries, Ltd. Method of manufacturing transistor having elevated source and drain regions
US6376318B1 (en) 1999-06-30 2002-04-23 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device
US6406973B1 (en) 1999-06-29 2002-06-18 Hyundai Electronics Industries Co., Ltd. Transistor in a semiconductor device and method of manufacturing the same
US6478873B1 (en) 1999-12-30 2002-11-12 Hyundai Electronics Industries Co., Ltd. Method of optimizing process of selective epitaxial growth
US6500719B1 (en) 1999-12-28 2002-12-31 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a MOSFET of an elevated source/drain structure with SEG in facet
US6521508B1 (en) 1999-12-31 2003-02-18 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a contact plug in a semiconductor device using selective epitaxial growth of silicon process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010977A (en) * 1973-05-28 1975-02-04
JPS50108886A (en) * 1974-02-01 1975-08-27

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010977A (en) * 1973-05-28 1975-02-04
JPS50108886A (en) * 1974-02-01 1975-08-27

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104483A (en) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Semiconductor device
US6261911B1 (en) 1999-02-13 2001-07-17 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a junction in a semiconductor device
US6277677B1 (en) 1999-04-12 2001-08-21 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device
US6309939B1 (en) 1999-06-18 2001-10-30 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device
US6300209B1 (en) 1999-06-24 2001-10-09 Hyundai Electronics Industries Co., Ltd. Method of fabricating triple well of semiconductor device using SEG
US6281085B1 (en) 1999-06-28 2001-08-28 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device
US6365473B1 (en) 1999-06-29 2002-04-02 Hyundai Electronics Industries Co. Ltd. Method of manufacturing a transistor in a semiconductor device
US6368927B1 (en) 1999-06-29 2002-04-09 Hyunadi Electronics Industries, Ltd. Method of manufacturing transistor having elevated source and drain regions
US6406973B1 (en) 1999-06-29 2002-06-18 Hyundai Electronics Industries Co., Ltd. Transistor in a semiconductor device and method of manufacturing the same
US6707062B2 (en) 1999-06-29 2004-03-16 Hyundai Electronics Industries Co., Ltd. Transistor in a semiconductor device with an elevated channel and a source drain
US6376318B1 (en) 1999-06-30 2002-04-23 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device
US6500719B1 (en) 1999-12-28 2002-12-31 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a MOSFET of an elevated source/drain structure with SEG in facet
US6478873B1 (en) 1999-12-30 2002-11-12 Hyundai Electronics Industries Co., Ltd. Method of optimizing process of selective epitaxial growth
US6521508B1 (en) 1999-12-31 2003-02-18 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a contact plug in a semiconductor device using selective epitaxial growth of silicon process

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