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JPS57204175A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57204175A
JPS57204175A JP56090568A JP9056881A JPS57204175A JP S57204175 A JPS57204175 A JP S57204175A JP 56090568 A JP56090568 A JP 56090568A JP 9056881 A JP9056881 A JP 9056881A JP S57204175 A JPS57204175 A JP S57204175A
Authority
JP
Japan
Prior art keywords
mask material
metal
mask
insulating film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56090568A
Other languages
Japanese (ja)
Inventor
Akira Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56090568A priority Critical patent/JPS57204175A/en
Publication of JPS57204175A publication Critical patent/JPS57204175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enhance positioning accuracy for high performance by a method wherein an electrode metal is adhered on an insulating film including a hole formed on a compound semiconductor substrate having an insulating film, and the insulating film is removed with a mask material provided thereon as a mask with the adhesion of the electrode metal. CONSTITUTION:An SiO2 layer 2 is formed on a mesa-etched GaAs active layer 1 to etch a gate forming part to a concave 3. A metal 4 for Schottky junction with the GaAs layer is evaporated over the entire surface. The metal 4 is undercut via the mask material 5 to etch the SiO2 layer 2 except for the part covered with the mask material 5. Then, an ohmic metal is evaporated with the mask material 5 as a mask to form electrodes 6, 7 then to remove the mask material 5. Thus, the electrode can be automatically positioned to enhance the dimensional accuracy of the element.
JP56090568A 1981-06-11 1981-06-11 Manufacture of semiconductor device Pending JPS57204175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56090568A JPS57204175A (en) 1981-06-11 1981-06-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56090568A JPS57204175A (en) 1981-06-11 1981-06-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57204175A true JPS57204175A (en) 1982-12-14

Family

ID=14002028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56090568A Pending JPS57204175A (en) 1981-06-11 1981-06-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57204175A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205765A (en) * 1983-05-09 1984-11-21 Nec Corp Manufacture of semiconductor device
JPS61113281A (en) * 1984-11-08 1986-05-31 New Japan Radio Co Ltd Manufacture of fet
JPS6237973A (en) * 1985-08-13 1987-02-18 Matsushita Electronics Corp Metal-electrode forming method
JPH0897232A (en) * 1994-09-29 1996-04-12 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134979A (en) * 1979-04-09 1980-10-21 Nippon Telegr & Teleph Corp <Ntt> Manufacturing of field-effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134979A (en) * 1979-04-09 1980-10-21 Nippon Telegr & Teleph Corp <Ntt> Manufacturing of field-effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205765A (en) * 1983-05-09 1984-11-21 Nec Corp Manufacture of semiconductor device
JPS61113281A (en) * 1984-11-08 1986-05-31 New Japan Radio Co Ltd Manufacture of fet
JPS6237973A (en) * 1985-08-13 1987-02-18 Matsushita Electronics Corp Metal-electrode forming method
JPH0897232A (en) * 1994-09-29 1996-04-12 Nec Corp Manufacture of semiconductor device

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