JPS57103364A - Preparation of field-effect trasistor - Google Patents
Preparation of field-effect trasistorInfo
- Publication number
- JPS57103364A JPS57103364A JP55179399A JP17939980A JPS57103364A JP S57103364 A JPS57103364 A JP S57103364A JP 55179399 A JP55179399 A JP 55179399A JP 17939980 A JP17939980 A JP 17939980A JP S57103364 A JPS57103364 A JP S57103364A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- whole surface
- fet
- metal layer
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To prepare FET wherein electrodes are provided at an interval of submicrons, by providing a Schottky metal layer on te whole surface of a substrate whereon source and drain electrodes are formed and by forming a gate electrode through etching by using a mask layer which is left in the concave part of a channel region. CONSTITUTION:The source and drain electrodes 24 and 25 are formed by coating on an N type layer 22 provided on a semiinsulating substrate 21 such as Si, SiO2 is connected on the whole surface, anisotropic etching is applied thereto, SiO2 films 44 and 45 are left thereby at the end parts of the electrodes and an N type layer 28 is exposed. Next, a metal layer 29 such as Ti is connected on the whole surface to form a Schottky junction 36. Thereafter a resist, for instance, is applied on the whole surface and is processed, for instance, by O2 plasma to make a resist mask 35 remain on the channel region. Subsequently, the gate electrode 37 is formed by etching the metal layer 29, the mask 35 is removed and thus a structure of FET is prepared. By this constitution, the interval between the electrodes is placed in a submicron order, whereby FET having improved characteristics can be prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55179399A JPS57103364A (en) | 1980-12-18 | 1980-12-18 | Preparation of field-effect trasistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55179399A JPS57103364A (en) | 1980-12-18 | 1980-12-18 | Preparation of field-effect trasistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57103364A true JPS57103364A (en) | 1982-06-26 |
Family
ID=16065181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55179399A Pending JPS57103364A (en) | 1980-12-18 | 1980-12-18 | Preparation of field-effect trasistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57103364A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0113161A2 (en) * | 1982-12-21 | 1984-07-11 | Kabushiki Kaisha Toshiba | Method of fabricating a schottky gate field effect transistor |
| JPS60251671A (en) * | 1984-05-29 | 1985-12-12 | Fujitsu Ltd | Field effect transistor and its manufacturing method |
| JPS6151980A (en) * | 1984-08-22 | 1986-03-14 | Fujitsu Ltd | Manufacturing method of semiconductor device |
| JPS61127180A (en) * | 1984-11-24 | 1986-06-14 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
| JPS61160972A (en) * | 1985-01-08 | 1986-07-21 | Nippon Gakki Seizo Kk | Manufacture of semiconductor device |
| EP0211353A2 (en) * | 1985-07-29 | 1987-02-25 | Nippon Telegraph and Telephone Corporation | Method for the manufacture of a field effect transistor |
| EP0237826A2 (en) * | 1986-03-19 | 1987-09-23 | Siemens Aktiengesellschaft | Method of making a self-aligned metallic contact |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5146867A (en) * | 1974-10-18 | 1976-04-21 | Matsushita Electronics Corp | Handotaisochino seizohoho |
| JPS55110038A (en) * | 1979-02-19 | 1980-08-25 | Nippon Telegr & Teleph Corp <Ntt> | Method for making electrode |
-
1980
- 1980-12-18 JP JP55179399A patent/JPS57103364A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5146867A (en) * | 1974-10-18 | 1976-04-21 | Matsushita Electronics Corp | Handotaisochino seizohoho |
| JPS55110038A (en) * | 1979-02-19 | 1980-08-25 | Nippon Telegr & Teleph Corp <Ntt> | Method for making electrode |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0113161A2 (en) * | 1982-12-21 | 1984-07-11 | Kabushiki Kaisha Toshiba | Method of fabricating a schottky gate field effect transistor |
| JPS60251671A (en) * | 1984-05-29 | 1985-12-12 | Fujitsu Ltd | Field effect transistor and its manufacturing method |
| JPS6151980A (en) * | 1984-08-22 | 1986-03-14 | Fujitsu Ltd | Manufacturing method of semiconductor device |
| JPH0326538B2 (en) * | 1984-08-22 | 1991-04-11 | Fujitsu Ltd | |
| JPS61127180A (en) * | 1984-11-24 | 1986-06-14 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
| JPH0360179B2 (en) * | 1984-11-24 | 1991-09-12 | Nippon Telegraph & Telephone | |
| JPS61160972A (en) * | 1985-01-08 | 1986-07-21 | Nippon Gakki Seizo Kk | Manufacture of semiconductor device |
| EP0211353A2 (en) * | 1985-07-29 | 1987-02-25 | Nippon Telegraph and Telephone Corporation | Method for the manufacture of a field effect transistor |
| EP0237826A2 (en) * | 1986-03-19 | 1987-09-23 | Siemens Aktiengesellschaft | Method of making a self-aligned metallic contact |
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