JPS6472567A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To facilitate miniaturization and to improve the performance of a MESFET by covering a whole surface except a gate electrode forming region with a high concentration layer for a nonalloy ohmic electrode, forming the sidewall of an insulating film on the peripheral edge of the gate electrode forming region, and then simultaneously forming the gate electrode and the ohmic electrode of the same metal film. CONSTITUTION:The gate electrode forming region of a semiconductor substrate is covered with an insulating film pattern 22, the upper surface including the insulating film 22 is covered with a high concentration layer 15 for a nonalloy ohmic electrode, the film 22 is then removed, the layer 15 for the nonalloy ohmic electrode on the film 22 is simultaneously removed, and the gate electrode forming region is formed with an opening 23. Then, the whole surface is covered with a second insulating film 24, the film 24 is perpendicularly etched, and the film 24 remains on the peripheral edge of the opening 23. Thereafter, the whole surface including the opening 23 is covered with a gate metal film 25, and the film 25 is patterned to form gate and ohmic electrodes.