JPS5519881A - Fieldeffect transistor - Google Patents
Fieldeffect transistorInfo
- Publication number
- JPS5519881A JPS5519881A JP9293278A JP9293278A JPS5519881A JP S5519881 A JPS5519881 A JP S5519881A JP 9293278 A JP9293278 A JP 9293278A JP 9293278 A JP9293278 A JP 9293278A JP S5519881 A JPS5519881 A JP S5519881A
- Authority
- JP
- Japan
- Prior art keywords
- recess
- gate
- electrode
- drain
- center section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To obtain a shot key barrier gate FET that has high withstand voltage and performance characteristics by forming a recess in the center section of an active layer that is located between a source electrode and a drain electrode, and providing a gate electrode at the bottom of the recess.
CONSTITUTION: An active layer 2a is grown on a semiinsulating GaAs substrate 1. Then a source electrode 3 and a drain electrode 4 are covered on the layer 2a with a given interval. Making use of these electrodes as a mask, the first recess 6 is formed by means of etching. Another recess 7 is etched in the center section of the recess 6 with a resistor film 8 as a mask that has a hole which corresponds to the center section of the recess 6, thus further reducing the thickness of the layer 2a. Then a gate electrode 5a is covered on the bottom of the recess 7. By so doing, withstand gate voltage and drain voltage are increased, as well as resistance between the source and gate, and resistance between the gate and drain are reduced, thus improving high frequency characteristics.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9293278A JPS5519881A (en) | 1978-07-28 | 1978-07-28 | Fieldeffect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9293278A JPS5519881A (en) | 1978-07-28 | 1978-07-28 | Fieldeffect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5519881A true JPS5519881A (en) | 1980-02-12 |
Family
ID=14068257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9293278A Pending JPS5519881A (en) | 1978-07-28 | 1978-07-28 | Fieldeffect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5519881A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251502A (en) * | 1985-04-30 | 1986-11-08 | Jgc Corp | Treatment of waste sulfuric acid |
| JPS63173330A (en) * | 1986-11-17 | 1988-07-16 | モトローラ・インコーポレーテッド | Slant contact etching |
| JPH01187978A (en) * | 1988-01-22 | 1989-07-27 | Mitsubishi Electric Corp | Field-effect transistor |
| EP0332373A2 (en) * | 1988-03-09 | 1989-09-13 | Exxon Research And Engineering Company | Process for removing sulfur moieties from claus tail-gas |
| JPH023938A (en) * | 1988-06-20 | 1990-01-09 | Mitsubishi Electric Corp | Field effect transistor |
| JPH047844A (en) * | 1990-04-25 | 1992-01-13 | Mitsubishi Electric Corp | Semiconductor device |
| US8933497B2 (en) | 2009-05-19 | 2015-01-13 | Murata Manufacturing Co., Ltd. | Semiconductor switch device and method of manufacturing semiconductor switch device |
-
1978
- 1978-07-28 JP JP9293278A patent/JPS5519881A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251502A (en) * | 1985-04-30 | 1986-11-08 | Jgc Corp | Treatment of waste sulfuric acid |
| JPS63173330A (en) * | 1986-11-17 | 1988-07-16 | モトローラ・インコーポレーテッド | Slant contact etching |
| JPH01187978A (en) * | 1988-01-22 | 1989-07-27 | Mitsubishi Electric Corp | Field-effect transistor |
| EP0332373A2 (en) * | 1988-03-09 | 1989-09-13 | Exxon Research And Engineering Company | Process for removing sulfur moieties from claus tail-gas |
| JPH023938A (en) * | 1988-06-20 | 1990-01-09 | Mitsubishi Electric Corp | Field effect transistor |
| JPH047844A (en) * | 1990-04-25 | 1992-01-13 | Mitsubishi Electric Corp | Semiconductor device |
| US8933497B2 (en) | 2009-05-19 | 2015-01-13 | Murata Manufacturing Co., Ltd. | Semiconductor switch device and method of manufacturing semiconductor switch device |
| JP5652392B2 (en) * | 2009-05-19 | 2015-01-14 | 株式会社村田製作所 | Semiconductor switch device and method of manufacturing semiconductor switch device |
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