JPS5495186A - Production of compound semiconductor device - Google Patents
Production of compound semiconductor deviceInfo
- Publication number
- JPS5495186A JPS5495186A JP296878A JP296878A JPS5495186A JP S5495186 A JPS5495186 A JP S5495186A JP 296878 A JP296878 A JP 296878A JP 296878 A JP296878 A JP 296878A JP S5495186 A JPS5495186 A JP S5495186A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- mesa
- approximately
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 4
- 239000007788 liquid Substances 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To obtain a clear mesa-etched structure with a good reproducibility by using an Al film as a mask for mesa etching and specifying etching liquid when a compound semiconductor substrate is mesa-etched.
CONSTITUTION: Al film 12 with approximately 3000 Å thickness is vacuum- evaporated on GaAs substrate 11 and is subjected to photo etching to open a desired-form window. Next, residual Al film 12 is used as a mask to etch substrate 11 by tartaric acid-H2O2-system etching liquid, and the first etching hole 14 with approximately 5000 Å depth is first formed. Next, the width of film 12 is reduced by photo etching, and substrate 11 is similarly etched to form the second etching hole 15 with approximately 2000 Å depth. Similarly, the third etching hole 16 with approximately 1000 Å depth is opened; and after this etching is repeated as required to obtain a desired mesa structure. Al film 12 is removed. Thus, mesa corners are formed as desired, and surface pollution does not occur.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP296878A JPS5495186A (en) | 1978-01-12 | 1978-01-12 | Production of compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP296878A JPS5495186A (en) | 1978-01-12 | 1978-01-12 | Production of compound semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5495186A true JPS5495186A (en) | 1979-07-27 |
Family
ID=11544163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP296878A Pending JPS5495186A (en) | 1978-01-12 | 1978-01-12 | Production of compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5495186A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57124440A (en) * | 1981-01-27 | 1982-08-03 | Nec Corp | Compound etching method |
| JPS63258023A (en) * | 1987-04-15 | 1988-10-25 | Fujitsu Ltd | Manufacturing method of semiconductor device |
| JP2007059357A (en) * | 2005-08-26 | 2007-03-08 | Matsushita Electric Works Ltd | Electrodeless discharge lamp device and lighting fixture equipped with this electrodeless discharge lamp |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5146879A (en) * | 1974-10-18 | 1976-04-21 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
-
1978
- 1978-01-12 JP JP296878A patent/JPS5495186A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5146879A (en) * | 1974-10-18 | 1976-04-21 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57124440A (en) * | 1981-01-27 | 1982-08-03 | Nec Corp | Compound etching method |
| JPS63258023A (en) * | 1987-04-15 | 1988-10-25 | Fujitsu Ltd | Manufacturing method of semiconductor device |
| JP2007059357A (en) * | 2005-08-26 | 2007-03-08 | Matsushita Electric Works Ltd | Electrodeless discharge lamp device and lighting fixture equipped with this electrodeless discharge lamp |
| US7884546B2 (en) | 2005-08-26 | 2011-02-08 | Panasonic Electric Works Co., Ltd. | Electrodeless discharge lamp apparatus and lighting fixture with the electrodeless discharge lamp apparatus |
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