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JPS5492179A - Removing method for photo resist film - Google Patents

Removing method for photo resist film

Info

Publication number
JPS5492179A
JPS5492179A JP15931177A JP15931177A JPS5492179A JP S5492179 A JPS5492179 A JP S5492179A JP 15931177 A JP15931177 A JP 15931177A JP 15931177 A JP15931177 A JP 15931177A JP S5492179 A JPS5492179 A JP S5492179A
Authority
JP
Japan
Prior art keywords
resist
photo resist
wafer
resist film
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15931177A
Other languages
Japanese (ja)
Inventor
Toshiaki Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP15931177A priority Critical patent/JPS5492179A/en
Publication of JPS5492179A publication Critical patent/JPS5492179A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent characteristics of a MOS-IC from deteriorating by removing a photo resist by a wafer scriber after dipping the photo resist in a resist exfoliation solution.
CONSTITUTION: Photo resist 9 ion-implanted to high density is exfoliated entirely by being dipped in a resist-exfoliation solution, but since pattern circumference 13 and surface have been hardened extremely, it can not be removed from the substrate. Removing resist 9 sticking to the substrate only at pattern circumference 13 by a wafer scriber makes the remaining resist reside on the wafer only at the pattern circumference. Therefore, even after remaining photo resist 15 is removed by gas plasma of O2 and CF4, impurities 14 and 15 remain only field oxidized film 3 with no influence upon gate oxidized film 12, so that characteristics of the MOS-IC will not deteriorate.
COPYRIGHT: (C)1979,JPO&Japio
JP15931177A 1977-12-29 1977-12-29 Removing method for photo resist film Pending JPS5492179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15931177A JPS5492179A (en) 1977-12-29 1977-12-29 Removing method for photo resist film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15931177A JPS5492179A (en) 1977-12-29 1977-12-29 Removing method for photo resist film

Publications (1)

Publication Number Publication Date
JPS5492179A true JPS5492179A (en) 1979-07-21

Family

ID=15691018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15931177A Pending JPS5492179A (en) 1977-12-29 1977-12-29 Removing method for photo resist film

Country Status (1)

Country Link
JP (1) JPS5492179A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244404A (en) * 2007-03-29 2008-10-09 Seiko Epson Corp Manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244404A (en) * 2007-03-29 2008-10-09 Seiko Epson Corp Manufacturing method of semiconductor device

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