JPS56108275A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS56108275A JPS56108275A JP1191380A JP1191380A JPS56108275A JP S56108275 A JPS56108275 A JP S56108275A JP 1191380 A JP1191380 A JP 1191380A JP 1191380 A JP1191380 A JP 1191380A JP S56108275 A JPS56108275 A JP S56108275A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- gate
- electrode
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain FET having large transconductance by providing an electrode to be the upper gate above the channel region in the lower gate region in which source and drain regions are provided and utilizing the depletion layer extending from the junction in the gate region and the depletion layer extdending below the upper gate. CONSTITUTION:On a P type semiconductor substrate 1, an N type epitaxial layer 2 is grown, which is separated into an island by a P type region 3 reaching the substrate 1. A P type region 4 to be the lower gate region is formed in the island- shaped layer 2 by diffusion. Then, in the region 4, a P<+> type region 5 for attaching a gate electrode to be provided thereto and N<+> type source and drain regions 6 and 7 are provided, and a shallow N type channel region 8 is formed by diffusion between the regions 6 and 7. Then, the whole surface is covered with an insulating film 14, and a gate electrode 13 to be the upper gate is attached between the regions 6 and 7 through the film 14. Moreover, windows are opened in the film 14 in order to attach a gate electrode 9 to the region 5, a source electrode 10 to the region 6 and a drain electrode 11 to the region 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1191380A JPS56108275A (en) | 1980-01-31 | 1980-01-31 | Field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1191380A JPS56108275A (en) | 1980-01-31 | 1980-01-31 | Field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56108275A true JPS56108275A (en) | 1981-08-27 |
Family
ID=11790943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1191380A Pending JPS56108275A (en) | 1980-01-31 | 1980-01-31 | Field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56108275A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58158974A (en) * | 1982-03-16 | 1983-09-21 | Nec Corp | Junction type field effect semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5341512A (en) * | 1976-09-24 | 1978-04-15 | Isao Tsukisawa | Production of flocked wall decorating cloth |
| JPS5435686A (en) * | 1977-08-25 | 1979-03-15 | Matsushita Electric Ind Co Ltd | Field effect semiconductor device of junction type |
-
1980
- 1980-01-31 JP JP1191380A patent/JPS56108275A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5341512A (en) * | 1976-09-24 | 1978-04-15 | Isao Tsukisawa | Production of flocked wall decorating cloth |
| JPS5435686A (en) * | 1977-08-25 | 1979-03-15 | Matsushita Electric Ind Co Ltd | Field effect semiconductor device of junction type |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58158974A (en) * | 1982-03-16 | 1983-09-21 | Nec Corp | Junction type field effect semiconductor device |
| JPH025301B2 (en) * | 1982-03-16 | 1990-02-01 | Nippon Electric Co |
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