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JPS57173980A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57173980A
JPS57173980A JP56060381A JP6038181A JPS57173980A JP S57173980 A JPS57173980 A JP S57173980A JP 56060381 A JP56060381 A JP 56060381A JP 6038181 A JP6038181 A JP 6038181A JP S57173980 A JPS57173980 A JP S57173980A
Authority
JP
Japan
Prior art keywords
gate
gate electrode
electrode
source
mesfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56060381A
Other languages
Japanese (ja)
Other versions
JPH0126195B2 (en
Inventor
Toshiki Ehata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56060381A priority Critical patent/JPS57173980A/en
Publication of JPS57173980A publication Critical patent/JPS57173980A/en
Publication of JPH0126195B2 publication Critical patent/JPH0126195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain an MESFET excellent for high frequency characteristic, by forming insulating compound of itself on the surface of gate metal with high accuracy to 0.1mum to utilize this for selfalign to determine the interval between source and gate. CONSTITUTION:A gate electrode 5 is provided directly on a semiconductor material operating layer 2 on a substrate 1 with the source electrode 3 and drain electrode 4 provided on the semiconductor material operating layer 2 close to the gate electrode 5. A metallic compound film 5' for the gate electrode is provided around the gate electrode 5. The parasitic resistance between the source and gate is reduced by such a structure to enlarge MESFET characteristic to higher frequency region mutiplied with the effect of short gate length.
JP56060381A 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof Granted JPS57173980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56060381A JPS57173980A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56060381A JPS57173980A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP28936088A Division JPH01157574A (en) 1988-11-16 1988-11-16 field effect transistor

Publications (2)

Publication Number Publication Date
JPS57173980A true JPS57173980A (en) 1982-10-26
JPH0126195B2 JPH0126195B2 (en) 1989-05-22

Family

ID=13140503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56060381A Granted JPS57173980A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57173980A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248478A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248478A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

Also Published As

Publication number Publication date
JPH0126195B2 (en) 1989-05-22

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