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JPS538076A - Production of mis semiconductor device - Google Patents

Production of mis semiconductor device

Info

Publication number
JPS538076A
JPS538076A JP8199276A JP8199276A JPS538076A JP S538076 A JPS538076 A JP S538076A JP 8199276 A JP8199276 A JP 8199276A JP 8199276 A JP8199276 A JP 8199276A JP S538076 A JPS538076 A JP S538076A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
mis semiconductor
forming
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8199276A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8199276A priority Critical patent/JPS538076A/en
Publication of JPS538076A publication Critical patent/JPS538076A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To readily produce a NOSLSI of a high dielectric strength by forming V-grooves on Si substrate surface, forming gate electrodes and gate insulation film through self-alignment and making a highly accurate and fine offset gate structure.
COPYRIGHT: (C)1978,JPO&Japio
JP8199276A 1976-07-12 1976-07-12 Production of mis semiconductor device Pending JPS538076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8199276A JPS538076A (en) 1976-07-12 1976-07-12 Production of mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8199276A JPS538076A (en) 1976-07-12 1976-07-12 Production of mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS538076A true JPS538076A (en) 1978-01-25

Family

ID=13761961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8199276A Pending JPS538076A (en) 1976-07-12 1976-07-12 Production of mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS538076A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113333A (en) * 1978-12-27 1980-09-01 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS5688367A (en) * 1979-12-17 1981-07-17 Ibm Method of forming electrode
JPS5713770A (en) * 1980-06-12 1982-01-23 Ibm V-mos device with self centering multiple electrodes
US5275965A (en) * 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113333A (en) * 1978-12-27 1980-09-01 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS5688367A (en) * 1979-12-17 1981-07-17 Ibm Method of forming electrode
JPS5713770A (en) * 1980-06-12 1982-01-23 Ibm V-mos device with self centering multiple electrodes
JPH0230585B2 (en) * 1980-06-12 1990-07-06 Intaanashonaru Bijinesu Mashiinzu Corp
US5275965A (en) * 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls

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