[go: up one dir, main page]

JPS5370769A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5370769A
JPS5370769A JP14686676A JP14686676A JPS5370769A JP S5370769 A JPS5370769 A JP S5370769A JP 14686676 A JP14686676 A JP 14686676A JP 14686676 A JP14686676 A JP 14686676A JP S5370769 A JPS5370769 A JP S5370769A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
layer
mask
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14686676A
Other languages
Japanese (ja)
Other versions
JPS5852351B2 (en
Inventor
Akihiro Shibatomi
Tanji Okawa
Yoshiro Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14686676A priority Critical patent/JPS5852351B2/en
Publication of JPS5370769A publication Critical patent/JPS5370769A/en
Publication of JPS5852351B2 publication Critical patent/JPS5852351B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To arbitrarily form the spacing between an Al gate electrode and source and drain electrodes without alignment of photo mask by side etching the Al layer on a semiconductor substrate with the mask of a W layer of a reflection factor higher than that of the substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP14686676A 1976-12-07 1976-12-07 Manufacturing method of semiconductor device Expired JPS5852351B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14686676A JPS5852351B2 (en) 1976-12-07 1976-12-07 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14686676A JPS5852351B2 (en) 1976-12-07 1976-12-07 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5370769A true JPS5370769A (en) 1978-06-23
JPS5852351B2 JPS5852351B2 (en) 1983-11-22

Family

ID=15417329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14686676A Expired JPS5852351B2 (en) 1976-12-07 1976-12-07 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5852351B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222965A (en) * 1983-06-02 1984-12-14 Nec Corp Manufacturing method of shot key barrier gate type field effect transistor
JPS6077468A (en) * 1983-10-04 1985-05-02 Nec Corp Field effect transistor and manufacture thereof
JPH01154564A (en) * 1987-12-10 1989-06-16 Fujitsu Ltd Manufacture of junction fet

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222965A (en) * 1983-06-02 1984-12-14 Nec Corp Manufacturing method of shot key barrier gate type field effect transistor
JPS6077468A (en) * 1983-10-04 1985-05-02 Nec Corp Field effect transistor and manufacture thereof
JPH0326537B2 (en) * 1983-10-04 1991-04-11 Nippon Electric Co
JPH01154564A (en) * 1987-12-10 1989-06-16 Fujitsu Ltd Manufacture of junction fet

Also Published As

Publication number Publication date
JPS5852351B2 (en) 1983-11-22

Similar Documents

Publication Publication Date Title
JPS53108390A (en) Semiconductor device and its manufacture
JPS5324277A (en) Semiconductor devic e and its production
JPS5370769A (en) Production of semiconductor device
JPS5331964A (en) Production of semiconductor substrates
JPS52113687A (en) Production of semiconductor device
JPS531471A (en) Manufacture for semiconductor device
JPS5267963A (en) Manufacture of semiconductor unit
JPS534469A (en) Semiconductor device
JPS5376692A (en) Semiconductor light emitting device
JPS5412566A (en) Production of semiconductor device
JPS539488A (en) Production of semiconductor device
JPS5372474A (en) Manufacture for field effect transistor
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS53135582A (en) Semiconductor device and its manufacture
JPS52117079A (en) Preparation of semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS5251872A (en) Production of semiconductor device
JPS5377168A (en) Production of semiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS5339086A (en) Semiconductor device
JPS5435683A (en) Manufacture of semiconductor device
JPS51112277A (en) Semiconductor device and its production method
JPS5384575A (en) Semicocductor device
JPS5395586A (en) Manufacture for semiconductor element
JPS5271986A (en) Beam lead type semiconductor device