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JPS5364481A - Production of schottky type field effect transistor - Google Patents

Production of schottky type field effect transistor

Info

Publication number
JPS5364481A
JPS5364481A JP13991876A JP13991876A JPS5364481A JP S5364481 A JPS5364481 A JP S5364481A JP 13991876 A JP13991876 A JP 13991876A JP 13991876 A JP13991876 A JP 13991876A JP S5364481 A JPS5364481 A JP S5364481A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
type field
schottky type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13991876A
Other languages
Japanese (ja)
Inventor
Masashi Dosen
Yoshifumi Mori
Kenji Morisane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13991876A priority Critical patent/JPS5364481A/en
Publication of JPS5364481A publication Critical patent/JPS5364481A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To perform self-aligning with good reproducibility by forming a recess on the operation layer between source and drain electrodes through the use of a mask layer and forming a gate electrode in the recess in the production process of Schottky type FETs.
COPYRIGHT: (C)1978,JPO&Japio
JP13991876A 1976-11-20 1976-11-20 Production of schottky type field effect transistor Pending JPS5364481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13991876A JPS5364481A (en) 1976-11-20 1976-11-20 Production of schottky type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13991876A JPS5364481A (en) 1976-11-20 1976-11-20 Production of schottky type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5364481A true JPS5364481A (en) 1978-06-08

Family

ID=15256672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13991876A Pending JPS5364481A (en) 1976-11-20 1976-11-20 Production of schottky type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5364481A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166968A (en) * 1979-06-15 1980-12-26 Fujitsu Ltd Schottky barrier type field effect transistor
JPS5814577A (en) * 1981-07-17 1983-01-27 Fujitsu Ltd Manufacture of field effect type semiconductor device
JPS5961074A (en) * 1982-09-01 1984-04-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing field effect transistor
JPS609173A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Manufacture of field-effect type semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166968A (en) * 1979-06-15 1980-12-26 Fujitsu Ltd Schottky barrier type field effect transistor
JPS5814577A (en) * 1981-07-17 1983-01-27 Fujitsu Ltd Manufacture of field effect type semiconductor device
JPS5961074A (en) * 1982-09-01 1984-04-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing field effect transistor
JPS609173A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Manufacture of field-effect type semiconductor device

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