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JPS5369587A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5369587A
JPS5369587A JP14532376A JP14532376A JPS5369587A JP S5369587 A JPS5369587 A JP S5369587A JP 14532376 A JP14532376 A JP 14532376A JP 14532376 A JP14532376 A JP 14532376A JP S5369587 A JPS5369587 A JP S5369587A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
electrode
superposition
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14532376A
Other languages
Japanese (ja)
Inventor
Kazunori Imaoka
Eiji Mitsujima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14532376A priority Critical patent/JPS5369587A/en
Publication of JPS5369587A publication Critical patent/JPS5369587A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce the capacitance between the electrodes and to improve the operating speed, by reducing the superposition of the electrode and the source and drain domain and the gate area through the use of Al for the gate electrode.
COPYRIGHT: (C)1978,JPO&Japio
JP14532376A 1976-12-03 1976-12-03 Manufacture for semiconductor device Pending JPS5369587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14532376A JPS5369587A (en) 1976-12-03 1976-12-03 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14532376A JPS5369587A (en) 1976-12-03 1976-12-03 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5369587A true JPS5369587A (en) 1978-06-21

Family

ID=15382492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14532376A Pending JPS5369587A (en) 1976-12-03 1976-12-03 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5369587A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142881A (en) * 1977-05-19 1978-12-12 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS55102270A (en) * 1979-01-29 1980-08-05 Agency Of Ind Science & Technol Method of fabricating semiconductor device
JPS59148369A (en) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Manufacturing method of MOS transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142881A (en) * 1977-05-19 1978-12-12 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS6013313B2 (en) * 1977-05-19 1985-04-06 松下電器産業株式会社 Manufacturing method of semiconductor device
JPS55102270A (en) * 1979-01-29 1980-08-05 Agency Of Ind Science & Technol Method of fabricating semiconductor device
JPH0212013B2 (en) * 1979-01-29 1990-03-16 Kogyo Gijutsu Incho
JPS59148369A (en) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Manufacturing method of MOS transistor

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