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JPS52141581A - Mos type semiconductor device 7 its manufacture - Google Patents

Mos type semiconductor device 7 its manufacture

Info

Publication number
JPS52141581A
JPS52141581A JP5865576A JP5865576A JPS52141581A JP S52141581 A JPS52141581 A JP S52141581A JP 5865576 A JP5865576 A JP 5865576A JP 5865576 A JP5865576 A JP 5865576A JP S52141581 A JPS52141581 A JP S52141581A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
type semiconductor
mos type
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5865576A
Other languages
Japanese (ja)
Other versions
JPS5537106B2 (en
Inventor
Takashi Osone
Shiro Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5865576A priority Critical patent/JPS52141581A/en
Publication of JPS52141581A publication Critical patent/JPS52141581A/en
Publication of JPS5537106B2 publication Critical patent/JPS5537106B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a short-channel constitution by reducing the area of the gate electrode and lowering input capacity and further to shield off electrically the noise due to parasitic capacity between the gate electrode and the source-drain region.
COPYRIGHT: (C)1977,JPO&Japio
JP5865576A 1976-05-20 1976-05-20 Mos type semiconductor device 7 its manufacture Granted JPS52141581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5865576A JPS52141581A (en) 1976-05-20 1976-05-20 Mos type semiconductor device 7 its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5865576A JPS52141581A (en) 1976-05-20 1976-05-20 Mos type semiconductor device 7 its manufacture

Publications (2)

Publication Number Publication Date
JPS52141581A true JPS52141581A (en) 1977-11-25
JPS5537106B2 JPS5537106B2 (en) 1980-09-25

Family

ID=13090594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5865576A Granted JPS52141581A (en) 1976-05-20 1976-05-20 Mos type semiconductor device 7 its manufacture

Country Status (1)

Country Link
JP (1) JPS52141581A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136276A (en) * 1978-04-14 1979-10-23 Agency Of Ind Science & Technol Manufacture for semiconductor device
JPS5541595A (en) * 1978-09-20 1980-03-24 Seiko Epson Corp Reference voltage source
JPS586175A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp semiconductor equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136276A (en) * 1978-04-14 1979-10-23 Agency Of Ind Science & Technol Manufacture for semiconductor device
JPS5541595A (en) * 1978-09-20 1980-03-24 Seiko Epson Corp Reference voltage source
JPS586175A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp semiconductor equipment

Also Published As

Publication number Publication date
JPS5537106B2 (en) 1980-09-25

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