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JPS52119872A - Manufacture of semi-conductor device - Google Patents

Manufacture of semi-conductor device

Info

Publication number
JPS52119872A
JPS52119872A JP3660776A JP3660776A JPS52119872A JP S52119872 A JPS52119872 A JP S52119872A JP 3660776 A JP3660776 A JP 3660776A JP 3660776 A JP3660776 A JP 3660776A JP S52119872 A JPS52119872 A JP S52119872A
Authority
JP
Japan
Prior art keywords
semi
manufacture
area
conductor device
drian
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3660776A
Other languages
Japanese (ja)
Other versions
JPS606107B2 (en
Inventor
Masanao Itoga
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3660776A priority Critical patent/JPS606107B2/en
Publication of JPS52119872A publication Critical patent/JPS52119872A/en
Publication of JPS606107B2 publication Critical patent/JPS606107B2/en
Expired legal-status Critical Current

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Abstract

PURPOSE: To reduce the parasitic capacity genrated between a gate electrode and a source area or a drian area and obtain MIS type FET of excellent properties by so arranging that a source area and a drian area may not exist under the gate electrode.
COPYRIGHT: (C)1977,JPO&Japio
JP3660776A 1976-03-31 1976-03-31 Manufacturing method of semiconductor device Expired JPS606107B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3660776A JPS606107B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3660776A JPS606107B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS52119872A true JPS52119872A (en) 1977-10-07
JPS606107B2 JPS606107B2 (en) 1985-02-15

Family

ID=12474475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3660776A Expired JPS606107B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS606107B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555533A (en) * 1978-10-18 1980-04-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63113105U (en) * 1987-01-14 1988-07-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555533A (en) * 1978-10-18 1980-04-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device
JPS627688B2 (en) * 1978-10-18 1987-02-18 Cho Eru Esu Ai Gijutsu Kenkyu Kumiai

Also Published As

Publication number Publication date
JPS606107B2 (en) 1985-02-15

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