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JPS52100875A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS52100875A
JPS52100875A JP1655876A JP1655876A JPS52100875A JP S52100875 A JPS52100875 A JP S52100875A JP 1655876 A JP1655876 A JP 1655876A JP 1655876 A JP1655876 A JP 1655876A JP S52100875 A JPS52100875 A JP S52100875A
Authority
JP
Japan
Prior art keywords
mos transistor
layer
type
type layer
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1655876A
Other languages
Japanese (ja)
Inventor
Kenji Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1655876A priority Critical patent/JPS52100875A/en
Publication of JPS52100875A publication Critical patent/JPS52100875A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve characteristics of MOS-FET by applying separately and independently P type layer between drain and gate electrodes on N type substrate and by forming specified ion implantation layer in the P type layer.
COPYRIGHT: (C)1977,JPO&Japio
JP1655876A 1976-02-19 1976-02-19 Mos transistor Pending JPS52100875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1655876A JPS52100875A (en) 1976-02-19 1976-02-19 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1655876A JPS52100875A (en) 1976-02-19 1976-02-19 Mos transistor

Publications (1)

Publication Number Publication Date
JPS52100875A true JPS52100875A (en) 1977-08-24

Family

ID=11919597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1655876A Pending JPS52100875A (en) 1976-02-19 1976-02-19 Mos transistor

Country Status (1)

Country Link
JP (1) JPS52100875A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106973A (en) * 1988-10-17 1990-04-19 Nec Corp Semiconductor device
JPH05299649A (en) * 1991-03-19 1993-11-12 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106973A (en) * 1988-10-17 1990-04-19 Nec Corp Semiconductor device
JPH05299649A (en) * 1991-03-19 1993-11-12 Nec Corp Semiconductor device

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