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JPS57153476A - Maufacture of field effect transistor - Google Patents

Maufacture of field effect transistor

Info

Publication number
JPS57153476A
JPS57153476A JP56038468A JP3846881A JPS57153476A JP S57153476 A JPS57153476 A JP S57153476A JP 56038468 A JP56038468 A JP 56038468A JP 3846881 A JP3846881 A JP 3846881A JP S57153476 A JPS57153476 A JP S57153476A
Authority
JP
Japan
Prior art keywords
electrode
oxide film
anode oxide
gate electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56038468A
Other languages
Japanese (ja)
Inventor
Ryuichiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56038468A priority Critical patent/JPS57153476A/en
Publication of JPS57153476A publication Critical patent/JPS57153476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate close positioning of a gate electrode and an ohmic electrode by providing a metal gate electrode on a semiconductor crystal layer and forming a porous anode oxide film on the surface of the electrode and covering the entire surface of the a wafer with metal for the ohmic electrode thereby removing it at the same time with etching of the anode oxide film. CONSTITUTION:A messa-cut GaAs active layer 4 is formed on a high resistance GaAs layer 5 on a semi-insulative GaAs substrate 6 and Al31 of 0.5mm. thickness is evaporized. A gate electrode 33 is made by sputter etching Al using a resist mask 32 and is anodized by 2.5% oxalic acid to make a porous anode oxide film 34 on the surface of the electrode 33. Then AuGe/Ni35 for an ohmic electrode is vaporized over the entire surface of the wafer, and the metalic film 35 on the anode oxide film 34 is etched with fluoric acid buffer solution, and then a meassa region is covered with a resist and etched. By this method the distance between the electrode 1 and 36 is made equal to the thickness of Al anodized film 34 and is adjustable optionally preventing parasitic resistance in the region between electrodes.
JP56038468A 1981-03-17 1981-03-17 Maufacture of field effect transistor Pending JPS57153476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56038468A JPS57153476A (en) 1981-03-17 1981-03-17 Maufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56038468A JPS57153476A (en) 1981-03-17 1981-03-17 Maufacture of field effect transistor

Publications (1)

Publication Number Publication Date
JPS57153476A true JPS57153476A (en) 1982-09-22

Family

ID=12526069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56038468A Pending JPS57153476A (en) 1981-03-17 1981-03-17 Maufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS57153476A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248478A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248478A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device

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